Patent application number | Description | Published |
20130341658 | LIGHT-EMITTING DEVICE HAVING DIELECTRIC REFLECTOR AND METHOD OF MANUFACTURING THE SAME - A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer. | 12-26-2013 |
20140124732 | NANO-STRUCTURED LIGHT-EMITTING DEVICE AND METHODS FOR MANUFACTURING THE SAME - A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure includes a nanocore, and an active layer and a second semiconductor layer that are formed on a surface of the nanocore, and of which the surface is planarized. A conductive layer surrounds sides of the nano structure, a first electrode is electrically connected to the first semiconductor layer and a second electrode is electrically connected to the conductive layer. | 05-08-2014 |
20140166974 | NANO-STRUCTURED LIGHT-EMITTING DEVICES - A nano-structured light-emitting device includes a plurality of light-emitting nanostructures each having a resistant layer disposed thereon. The device includes a first semiconductor layer of a first conductivity type, and a plurality of nanostructures disposed on the first semiconductor layer. Each nanostructure includes a nanocore, and an active layer and a second semiconductor layer of a second conductivity type that enclose surfaces of the nanocores. An electrode layer encloses and covers the plurality of nanostructures A plurality of resistant layers are disposed on the electrode layer and each corresponds to a respective nanostructure of the plurality of nanostructures. | 06-19-2014 |
20140203240 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor light emitting device includes a substrate; a base layer made of a first conductivity-type semiconductor and disposed on the substrate; a plurality of nanoscale light emitting units disposed in a region of an upper surface of the base layer and including a first conductivity-type nano-semiconductor layer protruding from the upper surface of the base layer, a nano-active layer disposed on the first conductivity-type nano-semiconductor layer, and a second conductivity-type nano-semiconductor layer disposed on the nano-active layer; and a light emitting laminate disposed in a different region of the upper surface of the base layer and having a laminated active layer. | 07-24-2014 |
20140209858 | NANO-STRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer. | 07-31-2014 |
20140209859 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores. | 07-31-2014 |
20140217357 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer. | 08-07-2014 |
20140246647 | NANOSTRUCTURE LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other. | 09-04-2014 |
20140367727 | LIGHT-EMITTING DEVICE HAVING DIELECTRIC REFLECTOR AND METHOD OF MANUFACTURING THE SAME - A light-emitting device includes a first conductive semiconductor layer formed on a substrate, a mask layer formed on the first conductive semiconductor layer and having a plurality of holes, a plurality of vertical light-emitting structures vertically grown on the first conductive semiconductor layer through the plurality of holes, a current diffusion layer surrounding the plurality of vertical light-emitting structures on the first conductive semiconductor layer, and a dielectric reflector filling a space between the plurality of vertical light-emitting structures on the current diffusion layer. | 12-18-2014 |
20150102365 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device includes a base layer, an insulating layer and a plurality of light emitting nanostructures. The base layer is formed of a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. Each of the light emitting nanostructures is disposed on the exposed regions of the base layer and includes nanocore formed of a first conductivity type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on side surfaces of the nanocore. Upper surfaces of the light emitting nanostructures are non-planar and contain portions free of the second conductivity-type semiconductor layer in order to prevent light emissions during device driving. | 04-16-2015 |
20150129834 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer, a plurality of light emitting nanostructures disposed on the first conductivity-type semiconductor base layer to be spaced apart from one another, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and a filling layer including a refractive portion disposed between the light emitting nanostructures and a cover portion filled between the light emitting nanostructures and enclosing the refractive portion. | 05-14-2015 |
20150221825 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - A semiconductor light emitting device includes a substrate, a first conductivity-type semiconductor base layer disposed on the substrate, a plurality of light emitting nanostructures, a transparent electrode layer, and a first electrode. The plurality of light emitting nanostructures are disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer and include a first conductivity-type semiconductor core, an active layer, and a second conductivity-type semiconductor layer, respectively. The transparent electrode layer is disposed on the second conductivity-type semiconductor layer and between the plurality of light emitting nanostructures. The first electrode is electrically connected to the second conductivity-type semiconductor layer by penetrating the substrate. | 08-06-2015 |
20150243853 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE PACKAGE - A method of manufacturing a light emitting diode (LED) package may include forming a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer on a growth substrate, forming first and second electrodes connected to the first and second conductivity-type semiconductor layers, respectively, bonding a first surface of a light transmissive substrate opposite to a second surface thereof to the light emitting structure, identifying positions of the first and second electrodes that are seen through the second surface of the light transmissive substrate, forming one or more through holes in the light transmissive substrate to correspond to the first and second electrodes, and forming first and second via electrodes by filling the through holes with a conductive material. | 08-27-2015 |
Patent application number | Description | Published |
20090105416 | Synthesis of Vinylphenylpyridine and Living Anionic Polymerization - Provided are a vinyl-biphenylpyridine monomer and a polymer thereof. More particularly, the present invention provides a vinyl-biphenylpyridine monomer having a side chain of pyridine or phenylpyridine as a functional group, a homopolymer of which molecular weight and molecular weight distribution are controlled using the monomer, and a block copolymer of which molecular structure and molecular weight are controlled to facilitate synthesis of an organic metal complex. Accordingly, the present invention provides a vinyl-biphenylpyridine monomer and a polymer thereof which are effectively used as nano and optical functional materials. | 04-23-2009 |
20110124820 | SUPRAMOLECULAR STRUCTURE OF HAVING SUB-NANO SCALE ORDERING - Provided is a crystalline organic polymer in which a main chain formed of amorphous polymer or monomer having a functional group is combined with a side chain by quaternization, cross-linking, hydrogen bonding or organic material-metal interaction. The main chain material having a functional group is combined with the side chain material to have crystallinity, and the organic polymer having crystallinity exhibits excellent diode characteristics. | 05-26-2011 |
20140142250 | SUPRAMOLECULAR STRUCTURE HAVING SUB-NANO SCALE ORDERING - An organic crystalline composition is provided. The organic crystalline composition includes a main material having π-conjugated back bone and a functional group containing an atom having an unshared electron pair, and a linking material combining with the adjacent main material at the functional group by quaternization, organic material-metal interaction, ionic bonding, or hydrogen bonding. | 05-22-2014 |