Patent application number | Description | Published |
20100221849 | METHOD AND SYSTEM FOR CONTROLLING AN IMPLANTATION PROCESS - A method for implant uniformity is provided that includes determining a variation of critical dimensions (CD) of a semiconductor wafer, moving the semiconductor wafer in a two-dimensional mode during an implantation process, and controlling a velocity of the movement of the semiconductor wafer so that an implant dose to the semiconductor wafer is varied based on the variation of CD. | 09-02-2010 |
20130075623 | MULTI-ION BEAM IMPLANTATION APPARATUS AND METHOD - An multi-ion beam implantation apparatus and method are disclosed. An exemplary apparatus includes an ion beam source that emits at least two ion beams; an ion beam analyzer; and a multi-ion beam angle incidence control system. The ion beam analyzer and the multi-ion beam angle incidence control system are configured to direct the emitted at least two ion beams to a wafer. | 03-28-2013 |
20130075624 | Beam Monitoring Device, Method, And System - A beam monitoring device, method, and system is disclosed. An exemplary beam monitoring device includes a one dimensional (1D) profiler. The 1D profiler includes a Faraday having an insulation material and a conductive material. The beam monitoring device further includes a two dimensional (2D) profiler. The 2D profiler includes a plurality of Faraday having an insulation material and a conductive material. The beam monitoring device further includes a control arm. The control arm is operable to facilitate movement of the beam monitoring device in a longitudinal direction and to facilitate rotation of the beam monitoring device about an axis. | 03-28-2013 |
20130110276 | MULTI-FACTOR ADVANCED PROCESS CONTROL METHOD AND SYSTEM FOR INTEGRATED CIRCUIT FABRICATION | 05-02-2013 |
20130140987 | ION IMPLANTATION WITH CHARGE AND DIRECTION CONTROL - The present disclosure provides for various advantageous methods and apparatus of controlling electron emission. One of the broader forms of the present disclosure involves an electron emission element, comprising an electron emitter including an electron emission region disposed between a gate electrode and a cathode electrode. An anode is disposed above the electron emission region, and a voltage set is disposed above the anode. A first voltage applied between the gate electrode and the cathode electrode controls a quantity of electrons generated from the electron emission region. A second voltage applied to the anode extracts generated electrons. A third voltage applied to the voltage set controls a direction of electrons extracted through the anode. | 06-06-2013 |
20130171336 | WAFER PROCESSING METHOD AND SYSTEM USING MULTI-ZONE CHUCK - In a wafer processing method and a wafer processing system, a first property on a back side of a wafer is measured. The back side of the wafer is supported on a multi-zone chuck having a plurality of zones with controllable clamping forces. The wafer is secured to the multi-zone chuck by controlling the clamping forces in the corresponding zones in accordance with measured values of the first property in the zones. | 07-04-2013 |
20130295753 | ION BEAM DIMENSION CONTROL FOR ION IMPLANTATION PROCESS AND APPARATUS, AND ADVANCED PROCESS CONTROL - A process control method is provided for ion implantation methods and apparatuses, to produce a high dosage area on a substrate such as may compensate for noted non-uniformities. In an ion implantation tool, separately controllable electrodes are provided as multiple sets of opposed electrodes disposed outside an ion beam. Beam blockers are positionable into the ion beam. Both the electrodes and beam blockers are controllable to reduce the area of the ion beam that is incident upon a substrate. The electrodes and beam blockers also change the position of the reduced-area ion beam incident upon the surface. The speed at which the substrate scans past the ion beam may be dynamically changed during the implantation process to produce various dosage concentrations in the substrate. | 11-07-2013 |
20140202383 | WAFER PROCESSING SYSTEM USING MULTI-ZONE CHUCK - A wafer processing system includes at least one metrology chamber, a process chamber, and a controller. The at least one metrology chamber is configured to measure a thickness of a first layer on a back side of a wafer. The process chamber is configured to perform a treatment on a front side of the wafer. The front side is opposite the back side. The process chamber includes therein a multi-zone chuck. The multi-zone chuck is configured to support the back side of the wafer. The multi-zone chuck has a plurality of zones with controllable clamping forces for securing the wafer to the multi-zone chuck. The controller is coupled to the metrology chamber and the multi-zone chuck. The controller is configured to control the clamping forces in the corresponding zones in accordance with measured values of the thickness of the first layer in the corresponding zones. | 07-24-2014 |
20140235071 | SUBSTRATE RAPID THERMAL HEATING SYSTEM AND METHODS - A method and apparatus for rapid thermal heat treatment of semiconductor and other substrates is provided. A number of heat lamps arranged in an array or other configuration produce light and heat radiation. The light and heat radiation is directed through a heat slot that forms a radiation beam of high intensity light and heat. The radiation beam is directed to a platen that includes multiple substrates. The apparatus and method include a controller that controls rotational and translational motion of the platen relative to the heat slot and also controls the power individually and collectively supplied to the heat lamps. A program is executed which maneuvers the platen such that all portions of all substrates receive the desired thermal treatment, i.e. attain a desired temperature for a desired time period. | 08-21-2014 |
20140273420 | ION IMPLANTATION - One or more techniques or systems for ion implantation are provided herein. A pressure control module is configured to maintain a substantially constant pressure within an ion implantation or process chamber. Pressure is maintained based on an attribute of an implant layer, pressure data, feedback, photo resist (PR) outgassing, a PR coating rate, a space charge effect associated with the implant layer, etc. By maintaining pressure within the process chamber, effects associated with PR outgassing are mitigated, thereby mitigating neutralization of ions. By maintaining charged ions, better control over implantation of the ions is achieved, thus allowing ions to be implanted at a desired depth. | 09-18-2014 |