Patent application number | Description | Published |
20100230758 | SEMICONDUCTOR DEVICE WITH IMPROVED STRESSOR SHAPE - A formation method and resulting strained semiconductor device are provided, the formation method including forming transistors on a substrate, each transistor having a gate disposed over a channel region, etching or annealing an elongated trench between adjacent channel regions, where the trench has a lower boundary that is deeper towards its ends than towards its center, and conformably embedding an elongated stress region in the trench between adjacent channel regions; and the resulting strained semiconductor device including transistors, each having a gate disposed over a channel region, and elongated stress regions disposed between adjacent channel regions, wherein each of the elongated stress regions has a lower boundary that is deeper towards its ends than towards its center. | 09-16-2010 |
20110175141 | SEMICONDUCTOR DEVICES INCLUDING MOS TRANSISTORS HAVING AN OPTIMIZED CHANNEL REGION AND METHODS OF FABRICATING THE SAME - A semiconductor device, including a device isolation layer arranged on a predetermined region of a semiconductor substrate to define an active region, the active region including a central top surface of a (100) crystal plane and an inclined edge surface extending from the central top surface to the device isolation layer, a semiconductor pattern covering the central top surface and the inclined edge surface of the active region, the semiconductor pattern including a flat top surface of a (100) crystal plane that is parallel with the central top surface of the active region and a sidewall that is substantially perpendicular to the flat top surface, and a gate pattern overlapping the semiconductor pattern. | 07-21-2011 |
20110220964 | SEMICONDUCTOR DEVICE HAVING FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an epitaxial pattern that fills a depression region formed at a semiconductor substrate of one side of a gate pattern. The gate pattern is disposed on a body located at one side of the depression region. The sidewall of the depression region adjacent to the body includes inner surfaces of tapered recesses that taper toward the body, or has an inner surface of a taper recess and a vertical lower sidewall. | 09-15-2011 |
20110241071 | Semiconductor Devices Having Field Effect Transistors With Epitaxial Patterns in Recessed Regions - A semiconductor device includes a device isolation pattern, a gate line, and an epitaxial pattern. The device isolation pattern is disposed in a semiconductor substrate to define an active area. The gate line intersects the active area. The epitaxial pattern fills a recess region in the active area at one side of the gate line and includes a different constituent semiconductor element than the semiconductor substrate. The recess region includes a first inner sidewall that is adjacent to the device isolation pattern and extends in the lengthwise direction of the gate, and a second inner sidewall that extends in the direction perpendicular to the lengthwise direction of the gate line. The active area forms the first inner sidewall of the recess, while the device isolation layer forms at least a portion of the second inner sidewall of the recess. The epitaxial pattern contacts the first inner sidewall and the second inner sidewall of the recess region. | 10-06-2011 |
20110272736 | SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME - A semiconductor device includes a substrate including a first region and a second region each having an n-type region and a p-type region, wherein the n-type region in the first region includes a silicon channel, the p-type region in the first region includes a silicon germanium channel, and the n-type region and the p-type region in the second region respectively include a silicon channel. A first gate insulating pattern formed of a thermal oxide layer is disposed on the substrate of the n-type and p-type regions in the second region. | 11-10-2011 |
20120241815 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate. | 09-27-2012 |
20120244674 | METHODS FOR FABRICATING SEMICONDUCTOR DEVICES - A method of fabricating a semiconductor device includes providing a semiconductor substrate including a channel region, forming a gate electrode structure on the channel region of the semiconductor substrate, forming a first trench in the semiconductor substrate, and forming a second trench in the semiconductor device. The first trench may include a first tip that protrudes toward the channel. The second trench may be an enlargement of the first trench and may include a second tip that also protrudes toward the channel region. In some examples, the second tip may protrude further towards the channel region than the first tip. | 09-27-2012 |
20120302018 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE HAVING FIELD EFFECT TRANSISTOR - A semiconductor device includes an epitaxial pattern that fills a depression region formed at a semiconductor substrate of one side of a gate pattern. The gate pattern is disposed on a body located at one side of the depression region. The sidewall of the depression region adjacent to the body includes inner surfaces of tapered recesses that taper toward the body, or has an inner surface of a taper recess and a vertical lower sidewall. | 11-29-2012 |
20130089961 | Methods of Forming Semiconductor Devices Including an Epitaxial Layer and Semiconductor Devices Formed Thereby - Methods of forming a semiconductor device are provided. The methods may include forming an epitaxial layer by growing a crystalline layer using a semiconductor source gas in a reaction chamber, and by etching the crystalline layer using an etching gas in the reaction chamber. | 04-11-2013 |
20130109144 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME | 05-02-2013 |
20140312430 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A method of fabricating one or more semiconductor devices includes forming a trench in a semiconductor substrate, performing a cycling process to remove contaminants from the trench, and forming an epitaxial layer on the trench. The cycling process includes sequentially supplying a first reaction gas containing germane, hydrogen chloride and hydrogen and a second reaction gas containing hydrogen chloride and hydrogen onto the semiconductor substrate. | 10-23-2014 |