Patent application number | Description | Published |
20080264082 | Ice making device and refrigerator having the same - An ice making device and a refrigerator having the ice making device include an ice making tray having ice making grooves opened at upper sides thereof to receive water and a cool air flow channel disposed below the ice making grooves and along which cool air flows. Cool air is uniformly supplied from one side to the other side of the ice making tray along the cool air flow channel, and therefore, the ice making process is completed in a reduced time. | 10-30-2008 |
20090293533 | Refrigerator - A refrigerator includes an ice maker disposed at one side of a storage chamber for storing food, a folding shelf disposed at the ice maker to be folded in a vertical direction or unfolded in a horizontal direction to efficiently use a space formed on the side of the ice maker, a shelf supporting member fixed to the ice maker to rotatably support the folding shelf, and a locking part disposed at the shelf supporting member to support the folding shelf when the folding shelf is unfolded to be arranged in a horizontal direction. When the folding shelf disposed in the storage chamber is folded in a vertical direction, there is formed a space capable of storing containers or food products having a great height. When the folding shelf is unfolded in a horizontal direction, containers or food products having a small height may be put on the folding shelf. Thus, a storage space of the refrigerator may be more efficiently used. | 12-03-2009 |
20110000249 | ICE MAKING DEVICE AND REFRIGERATOR HAVING THE SAME - A refrigerator includes a main body which forms an external appearance and has a storage chamber to be opened at a front side, and an ice making device which is disposed in the storage chamber to make ice. The ice making device includes an ice making tray which has ice making grooves for making ice, an ejector which rotates and separates the ice made in the ice making grooves, blocking members which are disposed at an upper portion of one side of the ice making grooves to prevent the ice separated from the ice making grooves through the other side of the ice making grooves from returning to the ice making grooves, and a guide member which is disposed above the other side of the ice making tray to guide the ice separated from the other side of the ice making grooves by the ejector toward the blocking members. | 01-06-2011 |
20150338157 | REFRIGERATOR - A refrigerator includes a storage chamber for storing food; an ice making compartment provided at an upper side corner of the storage chamber; and two shelves provided between a sidewall of the ice making compartment and a sidewall of the storage chamber opposite to the sidewall of the ice making compartment. The two shelves include a rotatable shelf and a horizontal shelf mounted between the sidewall of the storage chamber and the rotatable shelf and configured to be adjustable vertically upwards and downwards independently of the rotatable shelf. The rotatable shelf, while maintaining the vertical position, forms a vertical space for keeping food having a great height and stored on a shelf provided below the rotatable shelf. The rotatable shelf and the horizontal shelf form a horizontal space for keeping food having a great width when the horizontal shelf and the rotatable shelf in the horizontal position are horizontally aligned. | 11-26-2015 |
Patent application number | Description | Published |
20110140132 | Light-Emitting Device - Provided are a light-emitting device, a light-emitting device package, and a method for fabricating the light-emitting device. The light-emitting device includes a first light-emitting structure; an insulation layer having non-conductivity, in which a current does not flow, on the first light-emitting structure; a second light-emitting structure on the insulation layer; and a common electrode simultaneously and electrically connected to the first light-emitting structure and the second light-emitting structure. | 06-16-2011 |
20110186882 | LIGHT EMITTING DEVICE, METHOD OF FABRICATING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided are a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a reflective layer including a first GaN-based semiconductor layer having a first refractive index, a second GaN-based semiconductor layer having a second refractive index less than the first refractive index, and a third GaN-based semiconductor layer having a third refractive index less than the second refractive index and a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the reflective layer. | 08-04-2011 |
20110210359 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING UNIT - Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a conductive support substrate, a protection layer on the conductive support substrate, the protection layer having an inclined top surface, a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the conductive support substrate and the protection layer, and an electrode on the light emitting structure layer. A portion of the protection layer is disposed between the conductive support substrate and the light emitting structure layer. | 09-01-2011 |
20110220945 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE HAVING THE SAME - Disclosed are a light emitting device and a light emitting device package having the same. The light emitting device includes a first semiconductor layer doped with N type dopants, a first active layer on the first semiconductor layer, a second semiconductor layer doped with P type dopants on the first active layer, a second active layer on the second semiconductor layer, and a third semiconductor layer doped with N type dopants on the second active layer. A thickness of the second semiconductor layer is in a range of about 2000 Åto about 4000 Å, and doping concentration of the P type dopants doped in the second semiconductor layer is in a range of about 10 | 09-15-2011 |
20110220946 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided is a light emitting device. The light emitting device includes a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, an undoped semiconductor layer disposed on the second conductive type semiconductor layer and comprising a plurality of first holes, and a third conductive type semiconductor layer disposed on the undoped semiconductor layer and comprising a plurality of second holes. | 09-15-2011 |
20110229999 | FABRICATION METHOD OF LIGHT EMITTING DEVICE - Provided is a method for fabricating a light emitting device. The method for fabricating the light emitting device includes forming a buffer layer including a compound semiconductor in which a rare-earth element is doped on a substrate, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, which are successively stacked on the buffer layer, forming a first electrode layer on the light emitting structure, removing the substrate, and forming a second electrode layer under the light emitting structure. | 09-22-2011 |
20110240958 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - A light emitting device according to the embodiment includes a conductive support substrate; a second conductive semiconductor layer on the conductive support substrate; an active layer on the second conductive semiconductor layer; a first conductive semiconductor layer on the active layer, the first conductive semiconductor layer including a GaN layer, an InGaN layer, and a roughness formed with selectively removed the GaN and InGaN layers; and an electrode layer on the first conductive semiconductor layer. | 10-06-2011 |
20120080660 | LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion. | 04-05-2012 |
20140034904 | LIGHT-EMITTING DEVICE - A light-emitting device has a first light-emitting structure a second light-emitting structure on a top surface of the first light-emitting structure, an insulation layer between a top surface of the first light-emitting structure and a bottom surface of the second light-emitting structure; and a first electrode contacted with the second conductive type semiconductor layer and the third conductive type semiconductor layer. The first electrode contacts the insulation layer and the first electrode has a thickness thicker than that of the insulating layer. | 02-06-2014 |
20140110720 | LIGHT EMITTING DEVICE - A light emitting device includes a first semiconductor layer having a first conductive dopant, an active layer on the first semiconductor layer, an electron blocking layer on the active layer, a carrier injection layer between the active layer and the electron blocking layer, and a second semiconductor layer having a second conductive dopant on the electron blocking layer. The carrier injection layer includes the first conductive dopant and the second conductive dopant, and the first conductive dopant of the carrier injection layer has a concentration lower than a concentration of the second conductive dopant. | 04-24-2014 |
20150155436 | LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - A light emitting diode is disclosed. The disclosed light emitting diode includes a light emitting structure including a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer, active layer, and second-conductivity-type semiconductor layer are disposed to be adjacent to one another in a same direction. The active layer includes well and barrier layers alternately stacked at least one time. The well layer has a narrower energy bandgap than the barrier layer. The light emitting diode also includes a mask layer disposed in the first-conductivity-type semiconductor layer, a first electrode disposed on the first-conductivity-type semiconductor layer, and a second electrode disposed on the second-conductivity-type semiconductor layer. The first-conductivity-type semiconductor layer is formed with at least one recess portion. | 06-04-2015 |
20160056338 | LIGHT EMITTING DEVICE AND LIGHTING SYSTEM - A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a second semiconductor layer disposed on the first semiconductor layer and including the first conductive dopant having a doping concentration lower than a doping concentration of the first semiconductor layer, a third semiconductor layer disposed on the second semiconductor layer to adjust stress, a first conductive semiconductor layer on the third semiconductor layer, an active layer on the first conductive semiconductor layer, a second conductive semiconductor layer on the active layer; and a second electrode on the second conductive semiconductor layer, the third semiconductor layer has a doping concentration in a range between the doping concentration of the second semiconductor layer and a doping concentration of the first conductive semiconductor layer, and the doping concentration of the third semiconductor layer is increased toward the first conductive semiconductor layer. | 02-25-2016 |
Patent application number | Description | Published |
20140349192 | FABRICATING METHOD OF ELECTRODE ASSEMBLY AND ELECTROCHEMICAL CELL CONTAINING THE SAME - A fabricating method of an electrode assembly according to the present invention includes forming a radical unit having a four-layered structure obtained by stacking a first electrode, a first separator, a second electrode, and a second separator one by one, and stacking at least one radical unit one by one to form a unit stack part. | 11-27-2014 |
20140363725 | ELECTRODE ASSEMBLY AND POLYMER SECONDARY BATTERY CELL INCLUDING THE SAME - An electrode assembly includes a cell stack part having (a) a structure in which one kind of radical unit is repeatedly disposed and has same number of electrodes and separators which are alternately disposed and integrally combined, or (b) a structure in which at least two kinds of radical units are disposed in a predetermined order, and an auxiliary unit disposed on at least one among an uppermost part or a lowermost part of the cell stack part. The one kind of radical unit of (a) has a four-layered structure in which a first electrode, a first separator, a second electrode and a second separator are sequentially stacked or a repeating structure in which the four-layered structure is repeatedly stacked, and each of the at least two kinds of radical units are stacked by ones in the predetermined order to form the four-layered structure or the repeating structure. | 12-11-2014 |
20140363727 | ELECTRODE ASSEMBLY WITH IMPROVED STABILITY AND METHOD OF MANUFACTURING THE SAME - An electrode assembly includes a cell stack part having (a) a structure in which one kind of radical unit is repeatedly disposed, or (b) a structure in which at least two kinds of radical units are disposed in a predetermined order. The one kind of radical unit has a four-layered structure in which first electrode, first separator, second electrode and second separator are sequentially stacked or a repeating structure in which the four-layered structure is repeatedly stacked. Each of the at least two kinds of radical units are stacked by ones to form the four-layered structure or the repeating structure. The separator has a larger size than the electrode to expose an edge part of the separator to outside of the electrode and the separator. The edge parts of the separators included in one radical unit or in the cell stack part are attached to form a sealing part. | 12-11-2014 |
20140370362 | ELECTRODE ASSEMBLY AND POLYMER SECONDARY BATTERY CELL INCLUDING THE SAME - An electrode assembly includes a cell stack part having a structure of steps obtained by stacking at least two groups of radical units having different sizes or having different geometric shapes according to the size or the geometric shapes. The radical unit has a combined structure into one body by alternately same number of electrodes and separators, and each step of the cell stack part has a structure in which one kind of radical units is disposed once or repeatedly, or a structure in which at least two kinds of radical units are disposed. The one kind of radical unit has a four-layered structure of first electrode, first separator, second electrode and second separator sequentially stacked or a repeating structure of the four-layered structure. Each of the at least two kinds of radical units are stacked by ones to form the four-layered structure or the repeating structure. | 12-18-2014 |
20140373343 | METHOD OF MANUFACTURING ELECTRODE ASSEMBLY - A method of manufacturing an electrode assembly includes a first step of forming one kind of a radical unit or at least two kinds of radical units having an alternately stacked structure of a same number of electrodes and separators; and a second step of forming a cell stack part by repeatedly stacking one kind of the radical units, or by stacking at least two kinds of the radical units. Edge of the separator is not joined with that of adjacent separator. One kind of radical unit has a four-layered structure in which first electrode, first separator, second electrode and second separator are sequentially stacked together or a repeating structure in which the four-layered structure is repeatedly stacked, and at least two kinds of radical units are stacked by ones to form the four-layered structure or the repeating structure. | 12-25-2014 |
20150033527 | MEANDERING CORRECTION APPARATUS FOR ELECTRODE ASSEMBLY - Provided is a meandering correction apparatus for an electrode assembly. The meandering correction apparatus for the electrode assembly, which corrects a position of a second unit cell to align a first unit cell with the second unit cell in the electrode assembly in which the first and second unit cells having sizes different from each other are folded through a separator, includes a main body on which the electrode assembly is disposed, a movable jig unit disposed on one side of the main body to press one side surface of the electrode assembly, thereby moving the electrode assembly toward the other side of the main body, and a correction jig unit disposed on the other side of the main body to support the other side surface of the electrode assembly that moves by the movable jig unit, thereby correcting the position of the second unit cell. | 02-05-2015 |
20150061596 | GRIPPER ASSEMBLY FOR BATTERY CHARGING AND DISCHARGING - Provided is a gripper assembly for battery charging/discharging, which is electrically connected to a battery electrode to apply current during battery charging/discharging operation, the gripper assembly including a first electrode lead gripper including a first electrode gripper body disposed to correspond to a first electrode lead of the battery, and a first contact member coupled to one side of the first electrode gripper body and pressed to contact a surface of the first electrode lead and a second electrode lead gripper including a second electrode gripper body disposed to correspond to a second electrode lead of the battery, and a second contact member coupled to a side of the second electrode gripper body and attached to contact a surface of the second electrode lead. | 03-05-2015 |
20150072241 | ELECTRODE ASSEMBLY - An electrode assembly includes a cell stack part having (a) a structure in which one kind of radical unit having a same number of electrodes and separators alternately disposed and integrally combined is repeatedly disposed, or (b) a structure in which at least two kinds of radical units having a same number of electrodes and separators alternately disposed and integrally combined are disposed in a predetermined order, and a fixing part extending from a top surface along a side to a bottom surface thereof for fixing the cell stack part. The one kind of radical unit has a four-layered structure in which first electrode, first separator, second electrode and second separator are sequentially stacked or a repeating structure in which the four-layered structure is repeatedly stacked, and each of the at least two kinds of radical units are stacked by ones to form the four-layered structure or the repeating structure. | 03-12-2015 |
20150086864 | ELECTRODE ASSEMBLY AND SECONDARY BATTERY INCLUDING THE SAME - An electrode assembly according to an embodiment of the present invention includes a first electrode plate having a fist electrode tab at an end of one side thereof, a second electrode plate having a second electrode tab, which is formed in a same direction as a longitudinal direction of the first electrode tab and is formed at a position not overlapping the first electrode tab, and a protrusion which is formed at a position overlapping the fist electrode tab, and a separator insulating the first electrode plate and the second electrode plate. Therefore, the electrode assembly according to the embodiment of the present invention and the secondary battery including the same may improve the stability of the secondary battery by preventing lithium ion accumulation in a separator. | 03-26-2015 |
20150090702 | LASER CUTTING DEVICE AND METHOD - Provided is a laser cutting device and method which changes a cutting speed of a laser according to a difference between characteristics (absorption coefficients) of an object to be cut, so as to uniformly supply an energy of laser to the whole of the object, thereby preventing the object from being incompletely cut. A laser cutting device includes a database that stores information about a cutting pattern, a moving part that changes a location of a laser beam emitted to an object to be cut, a characteristic value input part that receives speed information from a user according to locations on the cutting pattern, and a control part that adjusts a moving speed of the laser beam by controlling the moving part according to the speed information from the characteristic value input part, and the information about the cutting pattern from the data base. | 04-02-2015 |
20150340729 | ELECTRODE ASSEMBLY AND METHOD OF MANUFACTURING THE SAME - An electrode assembly includes a cell stack part having (a) a structure in which one kind of radical unit is repeatedly disposed, or (b) a structure in which at least two kinds of radical units are disposed in a predetermined order, the one kind or the at least two kinds of radical units having same number of electrodes and separators alternately disposed. The one kind of radical unit has four-layered structure in which first electrode, first separator, second electrode and second separator are sequentially stacked or repeating structure of the four-layered structure. Each of the at least two kinds of radical units are stacked by ones to form the four-layered structure or the repeating structure. An outer separator that is a separator among separators of a radical unit positioned at the outermost part of the cell stack part is extended from a side of the cell stack part | 11-26-2015 |
Patent application number | Description | Published |
20120257452 | NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING THE SAME - A nonvolatile memory device includes a plurality of memory blocks, and a pass transistor array transmitting a plurality of drive signals to a selected memory block among the plurality of memory blocks in response to a block select signal. The pass transistor array includes high voltage transistors including one common drain and two sources formed in one active region and one of the plurality of drive signals transmitted to the common drain is transmitted to different memory blocks through the two sources. | 10-11-2012 |
20140016410 | MEMORY DEVICE AND METHOD ADJUSTING READ VOLTAGE ACCORDING TO VARYING THRESHOLD VOLTAGE DISTRIBUTIONS - A memory device comprises a memory cell that is in one of an erase state and first through N-th program states (N>2). The memory device can be read by determining a first read voltage between the erase state and the first program state based on variations of respective threshold voltage distributions of the erase state and the first program state, and determining one among second through N-th read voltages based on variations in respective threshold voltage distributions of two adjacent program states among the first through N-th program states, and determining remaining read voltages among the second through N-th read voltages based on the one read voltage. | 01-16-2014 |
20140022853 | MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF CONTROLLING READ VOLTAGE OF THE MEMORY DEVICE - A memory device includes a memory cell array and a page buffer unit. The memory cell array includes multiple memory cells. The page buffer unit performs a logic operation on data sequentially read from the memory cells at different voltage levels, based on the read data and a read direction of applying the different voltage levels. | 01-23-2014 |
20140029355 | MEMORY DEVICE AND METHOD OF DETERMINING READ VOLTAGE OF MEMORY DEVICE - A method of operating a memory device comprises applying an initial read voltage to a selected wordline to perform a read operation on memory cells connected to the selected wordline, determining whether a read failure occurs with respect to one or more of the memory cells, upon determining that a read failure has occurred with respect to some of the memory cells, determining threshold voltage distribution information for distinct groups of the memory cells, and determining a new read voltage to be applied to the selected wordline based on the threshold voltage distribution information. | 01-30-2014 |
20140129903 | METHOD OF OPERATING MEMORY DEVICE - A method of operating a memory device includes changing a first read voltage, which determines a first voltage state or a second voltage state, to a voltage within a first range and determining the voltage as a first select read voltage, and changing a second read voltage, which is used to determine whether the data stored in the memory cells is a third different voltage state or a fourth different voltage state, to a voltage within a second different range and determining the voltage as a second select read voltage. The first voltage state overlaps the second voltage. The third voltage state overlaps the fourth voltage state. A difference between a voltage at an intersection of the third and fourth voltage states and the second read voltage is greater than a difference between a voltage at an intersection of the first and second voltage states and the first read voltage. | 05-08-2014 |
20140153330 | METHOD FOR OPERATING NON-VOLATILE MEMORY DEVICE AND MEMORY CONTROLLER - An operating method for a non-volatile memory device includes applying first and second read voltages to a first word line to perform a read operation; counting first memory cells each having a threshold voltage belonging to a first voltage range between the first read voltage and the second read voltage; applying a third read voltage to the first word line sequentially after applying the second read voltage to count second memory cells each having a second threshold voltage belonging to a voltage range between the second read voltage and the third read voltage; comparing the number of first memory cells counted and the number of second memory cells counted; determining a fourth read voltage based on a result of the comparing; and applying the fourth read voltage to the first word line sequentially after applying the third read voltage. | 06-05-2014 |
20150029796 | MEMORY DEVICE, MEMORY SYSTEM, AND METHOD OF CONTROLLING READ VOLTAGE OF THE MEMORY DEVICE - A memory device includes a memory cell array having a plurality of memory cells, and a page buffer unit including a plurality of page buffers configured to store a plurality of pieces of data sequentially read from some of the plurality of memory cells at different read voltage levels, respectively, and to perform a logic operation on the plurality of pieces of data, respectively. The memory device further includes a counting unit configured to count the number of memory cells that exist in each of a plurality of sections defined by the different read voltage levels, based on results of the logic operation | 01-29-2015 |
20150179264 | NONVOLATILE MEMORY DEVICE AND METHOD OF DRIVING THE SAME - A nonvolatile memory device includes a plurality of memory blocks, and a pass transistor array transmitting a plurality of drive signals to a selected memory block among the plurality of memory blocks in response to a block select signal. The pass transistor array includes high voltage transistors including one common drain and two sources formed in one active region and one of the plurality of drive signals transmitted to the common drain is transmitted to different memory blocks through the two sources. | 06-25-2015 |
20150228346 | NON-VOLATILE MEMORY DEVICE AND RELATED METHOD OF OPERATION - A non-volatile memory device receives a start command through a command line, receives an address through an address line, receives at least one setting value through the address line, receives a confirm command corresponding to the start command through the command line, sets at least one parameter of the non-volatile memory device as the setting value based on the start command, a number of the setting value, and the confirm command, and executes an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the set parameter. | 08-13-2015 |
20150332777 | STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND READ METHOD THEREOF - A read method of a nonvolatile memory device includes reading data from a selected memory area of the nonvolatile memory device according to a first read voltage; detecting and correcting an error of the read data; and deciding a second read voltage for reading the selected memory area when an error of the read data is uncorrectable. The second read voltage is decided according to either the number of logical 0s or 1s included in the read data, or a ratio of logical 1s to logical 0s in the read data. | 11-19-2015 |
Patent application number | Description | Published |
20120080723 | FABRICATING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME METHOD - A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates. | 04-05-2012 |
20130146997 | MAGNETIC DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a magnetic device includes forming a stack structure, the stack structure including a magnetic layer, and etching the stack structure by using an etching gas, the etching gas including at least 80% by volume of H | 06-13-2013 |
20130149499 | MAGNETIC DEVICES AND METHODS OF MANUFACTURING THE SAME - Magnetic devices, and methods of manufacturing the same, include a stack structure including at least one magnetic layer, etched using an etching gas including at least 70 volume percent of a hydrogen-containing gas and at least 2 volume percent of CO gas. | 06-13-2013 |
20130309853 | Methods for Forming a Semiconductor Device Using Masks with Non-Metallic Portions - A method of forming a semiconductor device can be provided by forming a mask pattern including non-metallic first spaced-apart portions that extend in a first direction on a lower target layer and non-metallic second spaced-apart portions that extend in a second direction on the lower target layer to cross-over the non-metallic first spaced-apart portions at locations. The lower target layer can be etched using the mask pattern. | 11-21-2013 |
20140110757 | FABRICATING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATED USING THE SAME METHOD - A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates. | 04-24-2014 |
20150137261 | SEMICONDUCTOR DEVICE - A fabricating method of a semiconductor device includes providing a substrate having a first region and a second region, forming a plurality of first gates in the first region of the substrate, such that the first gates are spaced apart from each other at a first pitch, forming a plurality of second gates in the second region of the substrate, such that the second gates are spaced apart from each other at a second pitch different from the first pitch, implanting an etch rate adjusting dopant into the second region to form implanted regions, while blocking the first region, forming a first trench by etching the first region between the plurality of first gates, and forming a second trench by etching the second region between the plurality of second gates. | 05-21-2015 |
Patent application number | Description | Published |
20130022870 | ANODE ACTIVE MATERIAL INCLUDING A MULTILAYER METAL NANOTUBE, ANODE INCLUDING THE ANODE ACTIVE MATERIAL, LITHIUM BATTERY INCLUDING THE ANODE, AND METHOD OF PREPARING THE ANODE ACTIVE MATERIAL - An anode active material, an anode including the anode active material, a lithium battery including the anode, and a method of preparing the anode active material. The anode active material includes: a multilayer metal nanotube including: an inner layer; and an outer layer on the inner layer, wherein the inner layer includes a first metal having an atomic number equal to 13 or higher, and the outer layer includes a second metal different from the first metal. | 01-24-2013 |
20130078517 | ELECTRODE ACTIVE MATERIAL, ELECTRODE COMPRISING THE SAME, LITHIUM BATTERY COMPRISING THE ELECTRODE, AND METHOD OF PREPARING THE ELECTRODE ACTIVE MATERIAL - An electrode active material, an electrode including the electrode active material, a lithium battery including the electrode, and a method of preparing the electrode active material. The electrode active material includes a core having at least one of a metal or a metal oxide that enables intercalation and deintercalation of lithium ions and a crystalline carbon thin film that is formed on at least a portion of a surface of the core. The electrode active material has a nano-structure. | 03-28-2013 |
20130130103 | CATHODE AND LITHIUM BATTERY USING THE SAME - A cathode and a battery including a cathode active material including a layer-structured material having a composition of xLi | 05-23-2013 |
20130136998 | ELECTROLYTE COMPOSITION, GEL POLYMER ELECTROLYTE, AND LITHIUM BATTERY INCLUDING THE GEL POLYMER ELECTROLYTE - An electrolyte composition including a macro azo initiator containing a polyethylene oxide repeating unit, and a multi-functional urethane acrylate-based monomer, a gel polymer electrolyte including the electrolyte composition, and a lithium battery including the gel polymer electrolyte. | 05-30-2013 |
20130260205 | FLEXIBLE SECONDARY BATTERY - A flexible battery a first electrode layer, a first current collector layer disposed on the first electrode layer, where a plurality of through-holes is defined in the first current collector layer, a separator disposed on the first current collector layer, a second current collector layer disposed on the separator, where a plurality of through-holes is defined in the second current collector layer, and a second electrode layer disposed on the second current collector layer. | 10-03-2013 |
20140103252 | CATHODE ACTIVE MATERIAL, AND CATHODE AND LITHIUM BATTERY INCLUDING THE MATERIAL - A cathode active material including a lithium metal oxide represented by Formula 1: | 04-17-2014 |
20140193714 | CATHODE ACTIVE MATERIAL, CATHODE AND LITHIUM BATTERY INCLUDING CATHODE ACTIVE MATERIAL, AND METHOD OF PREPARING THE CATHODE ACTIVE MATERIAL - A cathode active material including a lithium metal oxide composite having a first domain and a second domain and represented by Formula 1: | 07-10-2014 |
20140377655 | COMPOSITE CATHODE ACTIVE MATERIAL, METHOD OF PREPARING THE COMPOSITE CATHODE ACTIVE MATERIAL, AND CATHODE AND LITHIUM BATTERY EACH INCLUDING THE COMPOSITE CATHODE ACTIVE MATERIAL - A composite cathode active material, a method of preparing the composite cathode active material, a cathode including the composite cathode active material, and a lithium battery including the cathode. The composite cathode active material includes a lithium intercalatable material; and a garnet oxide, wherein an amount of the garnet oxide is about 1.9 wt % or less, based on a total weight of the composite cathode active material. | 12-25-2014 |
20150079465 | COMPOSITE CATHODE ACTIVE MATERIAL, METHOD OF PREPARING THE SAME, AND CATHODE AND LITHIUM BATTERY CONTAINING THE SAME - A composite cathode active material including a lithium metal oxide including an oxide Formula 1 and sulfur, | 03-19-2015 |
20150162605 | ANODE ACTIVE MATERIAL INCLUDING A MULTILAYER METAL NANOTUBE, ANODE INCLUDING THE ANODE ACTIVE MATERIAL, LITHIUM BATTERY INCLUDING THE ANODE, AND METHOD OF PREPARING THE ANODE ACTIVE MATERIAL - An anode active material, an anode including the anode active material, a lithium battery including the anode, and a method of preparing the anode active material. The anode active material includes: a multilayer metal nanotube including: an inner layer; and an outer layer on the inner layer, wherein the inner layer includes a first metal having an atomic number equal to 13 or higher, and the outer layer includes a second metal different from the first metal. | 06-11-2015 |
Patent application number | Description | Published |
20140050989 | SEPARATOR FOR RECHARGEABLE LITHIUM BATTERY AND RECHARGEABLE LITHIUM BATTERY INCLUDING SAME - Disclosed is a separator having surface energy of about 45 mN to about 50 mN/m which can be prepared by radiating plasma on a polymer film under a current of from about 1800 mA to about 2000 mA and electric power of from about 2750 W to about 3000 W. Further disclosed is a rechargeable battery comprising the separator having a surface energy of about 45 mN to about 50 mN/m. | 02-20-2014 |
20140178772 | ELECTROLYTE FOR RECHARGEABLE LITHIUM BATTERY AND RECHARGEABLE LITHIUM BATTERY INCLUDING THE SAME - An electrolyte for a rechargeable lithium battery that includes a lithium salt and a non-aqueous organic solvent, wherein the non-aqueous organic solvent includes a fluoro-based solvent represented by the following Chemical Formula 1, and a rechargeable lithium battery including the same. | 06-26-2014 |
20140199602 | LITHIUM BATTERY - A lithium battery including: a positive electrode including an overlithiated lithium transition metal oxide having a layered structure; a negative electrode including a silicon-based negative active material; and an electrolyte between the positive electrode and the negative electrode, the electrolyte including an electrolytic solution including a fluorinated ether solvent in an amount of 3 vol % or more based on the total volume of the electrolytic solution. | 07-17-2014 |
20150118575 | RECHARGEABLE LITHIUM BATTERY - A rechargeable lithium battery including a negative electrode including a negative active material, a positive electrode, and an electrolyte solution including an additive, wherein the negative active material includes a Si-based material included in an amount of about 1 to about 70 wt % based on the total amount of the negative electrode, and the additive includes fluoroethylene carbonate and a compound represented by Chemical Formula 1. | 04-30-2015 |
20150125735 | RECHARGEABLE LITHIUM BATTERY - A rechargeable lithium battery includes: a negative electrode including a negative active material; a positive electrode; a separator interposed between the negative electrode and the positive electrode; and an electrolyte solution including an additive, wherein the negative active material includes a Si-based material, the Si-based material is included in an amount from about 1 to about 70 wt % based on total amount of the negative active material, and the additive includes fluoroethylene carbonate and a compound represented by the following Chemical Formula 1. | 05-07-2015 |
20150303456 | NEGATIVE ELECTRODE COMPOSITION, AND NEGATIVE ELECTRODE AND LITHIUM BATTERY CONTAINING THE SAME - Provided are a composition for a negative electrode, and a negative electrode and lithium battery including the composition. The composition includes a negative active material that contains one or more of a metal or a metalloid, an acrylate-based binder, and a guanidine carbonate. | 10-22-2015 |
20160079626 | RECHARGEABLE LITHIUM BATTERY - A rechargeable lithium battery includes a negative electrode including a negative active material including a Si-based material, a positive electrode, and an electrolyte including a lithium salt, an organic solvent, and an additive including lithium triflate and fluoroethylene carbonate. Embodiments of the rechargeable lithium battery have excellent irreversible characteristics and cycle-life characteristics. | 03-17-2016 |