Patent application number | Description | Published |
20150065349 | SUPERCONDUCTING FILTER DEVICE, AND SUPERCONDUCTING FILTER ADJUSTING METHOD FOR SUPERCONDUCTING FILTER DEVICE - A superconducting filter device of an embodiment includes: a high-frequency filter includes a superconducting element, and a dielectric member; and a drive tool configured to adjust a distance between the superconducting element and the dielectric member. The dielectric member and the drive tool take both a connection state and a separation state. | 03-05-2015 |
20150083186 | MULTI-JUNCTION SOLAR CELL - A multi-junction solar cell of an embodiment includes a first solar cell including a first photoelectric conversion device, a second solar cell including a plurality of second photoelectric conversion devices connected in series and having a back contact, and an insulating layer between the first solar cell and the second solar cell. A device isolation region is provided between the second photoelectric conversion devices connected in series. | 03-26-2015 |
20150084635 | MAGNETIC RESONANCE IMAGING APPARATUS - A magnetic resonance imaging apparatus of an embodiment includes a housing, a static magnetic field source having a superconducting coil or a permanent magnet inside the housing, and a superconducting array antenna inside the housing. | 03-26-2015 |
20150087107 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A method for manufacturing a photoelectric conversion device of an embodiment includes forming, on a first electrode, a photoelectric conversion layer comprising at least one of a chalcopyrite compound, a stannite compound, and a kesterite compound. The forming of the photoelectric conversion layer includes forming a photoelectric conversion layer precursor comprising at least one compound semiconductor of a chalcopyrite compound, a stannite compound, and a kesterite compound on the first electrode. The forming of the photoelectric conversion layer includes immersing the precursor in a liquid including at least one of Group IIa and Group IIb elements at 0° C. to 60° C., after forming of the photoelectric conversion layer precursor. The compound semiconductor on a side of the first electrode is at least either amorphous or larger in average crystal grain size than the compound semiconductor on an opposite side of the first electrode. | 03-26-2015 |
20150087522 | SUPERCONDUCTING ANTENNA DEVICE - A superconducting antenna device of an embodiment includes an array antenna made by stacking a flat antenna having one or more antennas made of a superconducting material and a ground pattern on a low-loss dielectric substrate from a short wave band to an extremely-high frequency band, a vacuum chamber configured to accommodate the array antenna, a refrigerator configured to cool the array antenna, and a vacuum insulating window configured to pass an electromagnetic wave from a short wave band to an extremely-high frequency band in a direction of directivity of the array antenna in the vacuum chamber. | 03-26-2015 |
20160072168 | MULTIBAND FILTER - According to one embodiment, a multiband filter includes a first resonator and a second resonator. The first resonator has a first capacitive component and a first inductive component. A signal of a first frequency is inputted to the first resonator. The second resonator has a second capacitive component and a second inductive component. A signal of a second frequency is inputted to the second resonator. The second frequency is different from the first frequency. A distance between a first capacitive component of the first resonator and a second capacitive component of the second resonator and a distance between a first inductive component of the first resonator and a second inductive component of the second resonator is longer than a shortest distance out of a distance between the first resonator and the second resonator. The capacitive components occur at the capacitance. The inductive components occur at the inductance. | 03-10-2016 |
20160087118 | PHOTOELECTRIC CONVERSION DEVICE, AND SOLAR CELL - A photoelectric conversion device of an embodiment has a bottom electrode, an intermediate layer on the bottom electrode, a p-type light absorbing layer on the intermediate layer, and an n-type layer on the p-type light absorbing layer. The bottom electrode is a first metal film or a semiconductor film. When the bottom electrode is a metal film, the intermediate layer comprises an oxide film or a sulfide film. When the bottom electrode is a semiconductor film, the intermediate layer comprises a second metal film and an oxide film or a sulfide film on the second metal film. | 03-24-2016 |
20160087125 | PHOTOELECTRIC CONVERSION DEVICE, AND SOLAR CELL - A photoelectric conversion device of an embodiment has a substrate, a bottom electrode on the substrate, a light absorbing layer on the bottom electrode, an n-type layer on the light absorbing layer, a transparent electrode on the n-type layer, and an oxide layer on the transparent electrode. n | 03-24-2016 |
20160087126 | PHOTOELECTRIC CONVERSION DEVICE, SOLAR CELL AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device of an embodiment has a bottom electrode, a light absorbing layer on the bottom electrode. The light absorbing layer comprises a thin film of a semiconductor comprising a group Ib element or elements, a group IIIb element or elements, and a group VIb element or elements and having a chalcopyrite structure. The light absorbing layer has an average crystal grain size of 1.5 μm or more. The group IIIb element or elements include Ga, Al, or both of Ga and Al. | 03-24-2016 |
20160087127 | PHOTOELECTRIC CONVERSION DEVICE, SOLAR CELL AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - A photoelectric conversion device of an embodiment has a substrate, a bottom electrode comprising an electrode layer on the substrate and an intermediate interface layer, a light absorbing layer on the intermediate interface layer. The electrode layer comprises Mo or W. The intermediate interface layer is a compound thin film of a compound comprising Mo or W and at least one element X selected from the group consisting of S, Se, and Te. The intermediate interface layer has a crystal phase and an amorphous phase with which the crystal phase is covered. | 03-24-2016 |
20160087137 | MULTI-JUNCTION SOLAR CELL - According to one embodiment, a multi-junction solar cell includes a first solar cell, a second solar cell, and an insulating layer. The first solar cell includes a first photoelectric conversion element. The second solar cell is connected in parallel with the first solar cell. The second solar cell includes multiple second photoelectric conversion elements connected in series. The insulating layer is provided between the first solar cell and the second solar cell. The second photoelectric conversion element includes a p-electrode and an n-electrode. The p-electrode is connected to a p | 03-24-2016 |