Patent application number | Description | Published |
20090003108 | SENSE AMPLIFIER METHOD AND ARRANGEMENT - In one embodiment, a memory system having a selectable configuration for sense amplifiers is disclosed. The memory system can include bit cells and a switch module coupled to the bit cell and to a first portion of a sense amplifier. The switch module can connect, disconnect or cross couple the bit cell to the sense amplifier based on a test for the input offset voltage of first portion of the sense amplifier. A similar configuration can be implemented by a second portion of the sense amplifier. The system can also include a programmer module to configure a setting of the switch module and can include a column select module to couple the bit cells to the sense amplifiers based on what column of bit cell is to be read. Other embodiments are also disclosed. | 01-01-2009 |
20090083495 | MEMORY CIRCUIT WITH ECC BASED WRITEBACK - Provided herein are circuits incorporating a dynamic technique to minimize power overhead with writeback. In some embodiments, error-correction-code (ECC) is used to dynamically detect bit failures and use that information to identify memory sub-sections to be enabled for writeback. | 03-26-2009 |
20090172283 | Reducing minimum operating voltage through hybrid cache design - Methods and apparatus to reduce minimum operating voltage through a hybrid cache design are described. In one embodiment, a cache with different size bit cells may be used, e.g., to reduce minimum operating voltage of an integrated circuit device that includes the cache and possibly other logic (such as a processor). Other embodiments are also described. | 07-02-2009 |
20100073994 | LEAKAGE COMPENSATION CIRCUIT FOR DYNAMIC RANDOM ACCESS MEMORY (DRAM) CELLS - A Dynamic Random Access Memory (DRAM) cell comprising a leakage compensation circuit. The leakage compensation circuit allows a compensation current from a source to flow to the memory cell storage node of the DRAM cell to compensate the leakage current from the memory cell storage node of the DRAM cell to improve retention time. | 03-25-2010 |
20100082905 | DISABLING CACHE PORTIONS DURING LOW VOLTAGE OPERATIONS - Methods and apparatus relating to disabling one or more cache portions during low voltage operations are described. In some embodiments, one or more extra bits may be used for a portion of a cache that indicate whether the portion of the cache is capable at operating at or below Vccmin levels. Other embodiments are also described and claimed. | 04-01-2010 |
20110085389 | METHOD AND SYSTEM TO LOWER THE MINIMUM OPERATING VOLTAGE OF A MEMORY ARRAY - A method and system to lower the minimum operating voltage of a memory array during read and/or write operations of the memory array. In one embodiment of the invention, the voltage of the read and/or write word line of the memory array is boosted or increased during read and/or write operations of the memory array. By doing so, the NMOS devices in the memory array are strengthened and the contention between the NMOS and PMOS devices are reduced during read and/or write operations of the memory array. This helps to lower or reduce the required VCC | 04-14-2011 |
20110149661 | MEMORY ARRAY HAVING EXTENDED WRITE OPERATION - In some embodiments, an apparatus comprising a memory array of static random access memory (SRAM) cells arranged in a plurality of rows and a plurality of columns and configured to receive a clock signal having a plurality of clock cycles; a plurality of word-lines associated with the plurality of rows of the SRAM cells; and a selected word-line driver configured during an extended write operation to drive a selected one of the plurality of word-lines with a write word-line signal having an extended duration. Other embodiments may be described and claimed. | 06-23-2011 |
20110317508 | MEMORY WRITE OPERATION METHODS AND CIRCUITS - In some embodiments, write wordline boost may be obtained from wordline driver boost and/or from bit line access transistor boost. | 12-29-2011 |
20120151235 | METHODS AND SYSTEMS FOR ENERGY EFFICIENCY AND ENERGY CONSERVATION INCLUDING ENTRY AND EXIT LATENCY REDUCTION FOR LOW POWER STATES - Systems and methods for entry and exit latency reduction for low power states are described. In one embodiment, a computer implemented method initiates an energy-efficient low power state (e.g., deep sleep state) to reduce power consumption of a device. The method sets a power supply voltage that provides sufficient power to a dual power supply array for retention of states. Logic is powered down in this low power state. | 06-14-2012 |
20130262957 | Method Of Correcting Adjacent Errors By Using BCH-Based Error Correction Coding - An apparatus is provided that comprises a processor. The processor comprises a cache to store data, a decoder, an error classification module, and an error correction module. The cache stores data, the data encoded as a codeword. The decoder reads the codeword from cache and calculates a syndrome of the codeword using an H-matrix. The error classification module determines an error type of the syndrome. The H-matrix is redesigned such that the columns form a geometrical sequence, and as a result not only the t-bit random errors but also (t+1) bit adjacent errors can be corrected. The error correction module, triggered by the enhanced error classification module, takes one of two sets of inputs depends on the error type (either random or adjacent error) and produces corrected data from the syndrome when the syndrome comprises a detectable and correctable error. | 10-03-2013 |
20130279241 | CIRCUITS AND METHODS FOR REDUCING MINIMUM SUPPLY FOR REGISTER FILE CELLS - A register file employing a shared supply structure to improve the minimum supply voltage. | 10-24-2013 |
20140003132 | APPARATUS FOR REDUCING WRITE MINIMUM SUPPLY VOLTAGE FOR MEMORY | 01-02-2014 |
20140003181 | MEMORY CELL WITH IMPROVED WRITE MARGIN | 01-02-2014 |
20140108733 | DISABLING CACHE PORTIONS DURING LOW VOLTAGE OPERATIONS - Methods and apparatus relating to disabling one or more cache portions during low voltage operations are described. In some embodiments, one or more extra bits may be used for a portion of a cache that indicate whether the portion of the cache is capable at operating at or below Vccmin levels. Other embodiments are also described and claimed. | 04-17-2014 |
20140277812 | DUAL LOOP DIGITAL LOW DROP REGULATOR AND CURRENT SHARING CONTROL APPARATUS FOR DISTRIBUTABLE VOLTAGE REGULATORS - Described is an apparatus which comprises: a plurality of transistors coupled to an input power supply and to a load; a first comparator with a first node coupled to the load, and a second node coupled to a first reference; a second comparator with a first node coupled to the load, and a second node coupled to a second reference, the second reference being different from the first reference; and a logic unit to receive output of the first comparator and output of the second comparator, the logic unit to turn on or off transistors of the plurality of transistors according to outputs of the first and second comparators. | 09-18-2014 |
20150009751 | METHODS AND SYSTEMS TO SELECTIVELY BOOST AN OPERATING VOLTAGE OF, AND CONTROLS TO AN 8T BIT-CELL ARRAY AND/OR OTHER LOGIC BLOCKS - Methods and systems to provide a multi-Vcc environment, such as to selectively boost an operating voltage of a logic block and/or provide a level-shifted control to the logic block. A multi-Vcc environment may be implemented to isolate a Vmin-limiting logic block from a single-Vcc environment, such as to reduce Vmin and/or improve energy efficiency in the single-Vcc environment. The logic block may include bit cells of a register file, a low-level processor cache, and/or other memory system. A cell Vcc may be boosted during a read mode and/or write wordlines (WWLs) and/or read wordlines (RWLs) may be asserted with boost. A wordline decoder may include a voltage level shifter with differential split-level logic, and a dynamic NAND, which may include NAND logic, a keeper circuit, and logic to delay a keeper control based on a delay of the level shifter to reduce contention during an initial NAND evaluation phase. | 01-08-2015 |