Patent application number | Description | Published |
20090026072 | AL-NI-LA-SI SYSTEM AL-BASED ALLOY SPUTTERING TARGET AND PROCESS FOR PRODUCING THE SAME - The present invention relates to an Al—Ni—La—Si system Al-based alloy sputtering target including Ni, La and Si, in which, when a section from (¼)t to (¾)t (t: thickness) in a cross section vertical to a plane of the sputtering target is observed with a scanning electron microscope at a magnification of 2000 times, (1) a total area of an Al—Ni system intermetallic compound having an average particle diameter of 0.3 μm to 3 μm with respect to a total area of the entire Al—Ni system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni system intermetallic compound being mainly composed of Al and Ni; and (2) a total area of an Al—Ni—La—Si system intermetallic compound having an average particle diameter of 0.2 μm to 2 μm with respect to a total area of the entire Al—Ni—La—Si system intermetallic compound is 70% or more in terms of an area fraction, the Al—Ni—La—Si system intermetallic compound being mainly composed of Al, Ni, La, and Si. | 01-29-2009 |
20090242394 | AL-BASED ALLOY SPUTTERING TARGET AND MANUFACTURING METHOD THEREOF - The present invention provides an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target capable of decreasing a generation of splashing in an initial stage of using the sputtering target, preventing defects caused thereby in interconnection films or the like and improving a yield and operation performance of an FPD, as well as a manufacturing method thereof. The invention relates to an Al-based alloy sputtering target which is an Al—(Ni, Co)—(Cu, Ge)—(La, Gd, Nd) alloy sputtering target comprising at least one member selected from the group A (Ni, Co), at least one member selected from the group B (Cu, Ge), and at least one member selected from the group C (La, Gd, Nd) wherein a Vickers hardness (HV) thereof is 35 or more. | 10-01-2009 |
20100231116 | REFLECTIVE ELECTRODE, DISPLAY DEVICE, AND METHOD FOR PRODUCING DISPLAY DEVICE - A reflective electrode ( | 09-16-2010 |
20100295053 | THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY DEVICE - The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer | 11-25-2010 |
20110008640 | DISPLAY DEVICE, PROCESS FOR PRODUCING THE DISPLAY DEVICE, AND SPUTTERING TARGET - Disclosed is a display device comprising an aluminum alloy film. In a wiring structure of a thin-film transistor substrate for use in display devices, the aluminum alloy film can realize direct contact between a thin film of an aluminum alloy and a transparent pixel electrode, can simultaneously realize low electric resistance and heat resistance, and can improve resistance to corrosion by an amine-based peeling liquid and an alkaline developing solution used in a thin-film transistor production process. In the display device, an oxide electroconductive film is in direct contact with an Al alloy film and at least a part of the Al alloy component is precipitated on the contact surface of the Al alloy film. The Al alloy film comprises at least one element (element X1) selected from the group consisting of Ni, Ag, Zn, and Co and at least one element (element X2) which, together with the element X1, can form an intermetallic compound. An intermetallic compound, which has a maximum diameter of not more than 150 nm and is represented by at least one of X1—X2 and Al—X1—X2, is formed in the Al alloy film. | 01-13-2011 |
20110024761 | INTERCONNECTION STRUCTURE, A THIN FILM TRANSISTOR SUBSTRATE, AND A MANUFACTURING METHOD THEREOF, AS WELL AS A DISPLAY DEVICE - Provided is a direct contact technology by which a barrier metal layer between an Al alloy interconnection composed of pure Al or an Al alloy and a semiconductor layer can be eliminated and the Al alloy interconnection can be directly and surely connected to the semiconductor layer within a wide process margin. In an interconnection structure, the semiconductor layer, and the Al alloy film composed of the pure Al or the Al alloy are provided on the substrate in this order from the substrate side. A multilayer structure of an (N, C, F) layer containing at least one type of an element selected from among a group composed of nitrogen, carbon and fluorine, and an Al—Si diffusion layer containing Al and Si is included in this order from the substrate side, between the semiconductor layer and the Al alloy film. At least the one type of the element, i.e., nitrogen, carbon or fluorine contained in the (N, C, F) layer is bonded with Si contained in the semiconductor layer. | 02-03-2011 |
20110121297 | WIRING STRUCTURE, THIN FILM TRANSISTOR SUBSTRATE, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE, AND DISPLAY DEVICE - Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu—Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer. | 05-26-2011 |
20110248272 | ORGANIC EL DISPLAY DEVICE REFLECTIVE ANODE AND METHOD FOR MANUFACTURING THE SAME - Provided is a reflective anode for an organic EL display device having a reflective film made from an Al-based alloy which can realize a low contact resistance with an oxide conductive film and achieve an excellent reflectivity. Provided is also a method for manufacturing the reflective anode for an organic EL display device. The method includes: a step of forming an Al-based alloy film containing 0.1 to 2 atomic % of Ni or Co on a substrate; a step of subjecting the Al-based alloy film to a thermal treatment in a vacuum or an inactive gas atmosphere at the temperature of 150 degrees C. or above; and a step of forming an oxide conductive film so as to be in direct contact with the Al-based alloy film. | 10-13-2011 |
20110273075 | DISPLAY DEVICE - A display device is provided with a Cu alloy film having high adhesiveness to a transparent substrate and a low electrical resistivity. The Cu alloy film for the display device is directly brought into contact with the transparent substrate, and the Cu alloy film has the multilayer structure, which includes a first layer (Y) composed of a Cu alloy containing, in total, 2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn, and a second layer (X) which is composed of pure Cu or substantially a Cu alloy having Cu as the main component and has an electrical resistivity lower than that of the first layer (Y). The first layer (Y) is brought into contact with the transparent substrate. | 11-10-2011 |
Patent application number | Description | Published |
20090001373 | ELECTRODE OF ALUMINUM-ALLOY FILM WITH LOW CONTACT RESISTANCE, METHOD FOR PRODUCTION THEREOF, AND DISPLAY UNIT - Disclosed herein are an electrode of aluminum alloy film, a method for production thereof, and a display unit provided therewith, said electrode exhibiting a low electric resistance when in contact with a transparent oxide conductive film even though the aluminum alloy contains a less amount of alloying element than usual. The electrode of low contact resistance type is an aluminum alloy film in direct contact with a transparent oxide electrode, wherein said aluminum alloy film contains 0.1-1.0 atom % of metal nobler than aluminum and is in direct contact with a transparent oxide electrode through a surface having surface roughness no smaller than 5 nm in terms of maximum height Rz. | 01-01-2009 |
20090004490 | LAYERED STRUCTURE AND ITS MANUFACTURING METHOD - This invention is intended to provide a layered structure in which Al alloy is directly connected to transparent oxide conducting layer without increasing electrical contact resistance between the two, with wiring resistance held low and galvanic corrosion being less likely to occur in developing solution or other electrolyte fluids, and the manufacturing method of such layered structure. The manufacturing method intended to provide such layered structure composed of the Al alloy and the transparent oxide conducting layer directly connected to each other, includes a first process to form the above transparent oxide conducting layer on a substrate, a second process to form, on the transparent oxide conducting layer, an Al alloy layer containing alloy components having less ionization tendency than aluminum, and a third process to heat the above Al alloy layer at a temperature equal to or higher than the temperature at which interchemical compound between aluminum and the above alloy components can be separated out. | 01-01-2009 |
20110220903 | REFLECTIVE ANODE AND WIRING FILM FOR ORGANIC EL DISPLAY DEVICE - To avoid a phenomenon of deterioration which is characteristic to an organic EL display device, such as a dark spot, without forming a pin hole in an organic material used for forming an organic EL layer. A reflective anode for an organic EL display device includes: an Ag-based alloy film ( | 09-15-2011 |