Patent application number | Description | Published |
20100093153 | MANUFACTURING METHOD OF SOI SUBSTRATE - To prevent, in the case of irradiating a single crystal semiconductor layer with a laser beam, an impurity element from being taken into the single crystal semiconductor layer at the time of laser irradiation. In a manufacturing method of an SOI substrate, a single crystal semiconductor substrate and a base substrate are prepared; an embrittlement region is formed in a region at a predetermined depth from a surface of the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with accelerated ions; the single crystal semiconductor substrate and a base substrate are bonded to each other with an insulating layer interposed therebetween; a single crystal semiconductor layer is formed over the base substrate with the insulating layer interposed therebetween by heating the single crystal semiconductor substrate to cause separation using the embrittlement region as a boundary; an oxide film formed on the single crystal semiconductor layer is removed; and at least a surface of the single crystal semiconductor layer is melted by irradiating the surface of the single crystal semiconductor layer with a laser beam after the removal of the oxide film. The number of times the single crystal semiconductor layer is melted by the irradiation with the laser beam is one. | 04-15-2010 |
20110076566 | NEGATIVE ELECTRODE ACTIVE MATERIAL, NEGATIVE ELECTRODE, AND POWER STORAGE DEVICE - An object is to improve characteristics of a power storage device and achieve a long lifetime. In the case where a lithium nitride is used for a negative electrode active material of a power storage device, a plurality of lithium nitride layers with different lithium concentrations are stacked. For example, in the case where a first lithium nitride layer and a second lithium nitride layer are stacked over a current collector, lithium is contained in the first lithium nitride layer at a lower concentration than lithium contained in the second lithium nitride layer. In this case, a concentration of a transition metal of the first lithium nitride layer is higher than a concentration of the transition metal of the second lithium nitride layer. Note that another alkali metal may be used instead of lithium. | 03-31-2011 |
20110177396 | ELECTRICITY STORAGE DEVICE - An object is to improve characteristics of a power storage device. The present invention relates to an electricity storage device comprising a current collector and a negative electrode-active material layer formed over the current collector. The negative electrode-active material layer includes a negative electrode comprising a first negative electrode layer in contact with the current collector; a second negative electrode layer in contact with the first negative electrode layer, having a smaller capacitance than the first negative electrode layer and containing one material selected from a nitride of lithium and a transition metal represented by Li | 07-21-2011 |
20110212363 | POWER STORAGE SYSTEM AND MANUFACTURING METHOD THEREFOR AND SECONDARY BATTERY AND CAPACITOR - The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer. | 09-01-2011 |
20110236753 | SECONDARY BATTERY AND METHOD FOR MANUFACTURING ELECTRODE OF THE SAME - A secondary battery to be provided includes an electrode including silicon or a silicon compound, and the electrode includes, for example, a current collector formed using metal and a silicon film as an active material provided over the current collector. The hydrogen concentration in the silicon film of the electrode may be higher than or equal to 1.0×10 | 09-29-2011 |
20110236754 | SECONDARY BATTERY AND METHOD FOR FORMING ELECTRODE OF SECONDARY BATTERY - An object is to provide a secondary battery having excellent charge-discharge cycle characteristics. A secondary battery including an electrode containing silicon or a silicon compound is provided, in which the electrode is provided with a layer containing silicon or a silicon compound over a layer of a metal material; a mixed layer of the metal material and the silicon is provided between the metal material layer and the layer containing silicon or a silicon compound; the metal material has higher oxygen affinity than that of ions which give and receive electric charges in the secondary battery; and an oxide of the metal material does not have an insulating property. The ions which give and receive electric charges are alkali metal ions or alkaline earth metal ions. | 09-29-2011 |
20110236757 | POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A power storage device with favorable battery characteristics and a manufacturing method thereof are provided. The power storage device includes at least a positive electrode and a negative electrode provided so as to face the positive electrode with an electrolyte provided therebetween. The positive electrode includes a collector and a film containing an active material over the collector. The film containing the active material contains Li | 09-29-2011 |
20120045692 | Electrical Appliance - An object is to increase the conductivity of an electrode including active material particles and the like, which is used for a battery. Two-dimensional carbon including 1 to 10 graphenes is used as a conduction auxiliary agent, instead of a conventionally used conduction auxiliary agent extending only one-dimensionally at most, such as graphite particles, acetylene black, or carbon fibers. A conduction auxiliary agent extending two-dimensionally has higher probability of being in contact with active material particles or other conduction auxiliary agents, so that the conductivity can be improved. | 02-23-2012 |
20120088151 | POSITIVE-ELECTRODE ACTIVE MATERIAL AND POWER STORAGE DEVICE - A positive-electrode active material with improved electrical conductivity, and a power storage device using the material are provided. A positive-electrode active material with large capacity, and a power storage device using the material are provided. A core including lithium metal oxide is used as a core of a main material of the positive-electrode active material, and one to ten pieces of graphene is used as a covering layer for the core. A hole is provided for graphene, whereby transmission of a lithium ion is facilitated, resulting in improvement of use efficiency of current. | 04-12-2012 |
20120237822 | LITHIUM ION SECONDARY BATTERY AND METHOD FOR MANUFACTURING THE SAME - A lithium ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer over the positive electrode current collector. The positive electrode active material layer includes a plurality of lithium-containing composite oxides each of which is expressed by LiMPO | 09-20-2012 |
20120244430 | LITHIUM-ION SECONDARY BATTERY - To provide a lithium-ion secondary battery having higher discharge capacity and higher energy density and a manufacturing method thereof. The lithium-ion secondary battery includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode. The positive electrode includes a positive electrode current collector and a positive electrode active material layer provided over the positive electrode current collector. In the positive electrode active material layer, graphenes and lithium-containing composite oxides are alternately provided. The lithium-containing composite oxide is a flat single crystal particle in which the length in the b-axis direction is shorter than each of the lengths in the a-axis direction and the c-axis direction. Further, the lithium-containing composite oxide is provided over the positive electrode current collector so that the b-axis of the single crystal particle intersects with a surface of the positive electrode current collector. | 09-27-2012 |
20130134051 | FLEXIBLE SUBSTRATE PROCESSING APPARATUS - To provide a flexible substrate processing apparatus which allows the stable reduction of an oxide contained in a film-like structure body formed on a flexible substrate. The apparatus has a substrate carrying-out portion where a flexible substrate on which a film-like structure body is formed is unwound; a reduction treatment portion where an oxide contained in the film-like structure body formed on the flexible substrate is electrochemically reduced; a washing portion where the flexible substrate and the film-like structure body are washed; a drying portion where the flexible substrate and the film-like structure body are dried; and a substrate carrying-in portion where the flexible substrate on which the film-like structure body is formed is taken up. | 05-30-2013 |
20140023920 | SECONDARY BATTERY - A secondary battery in which graphite that is an active material can occlude and release lithium efficiently is provided. Further, a highly reliable secondary battery in which the amount of lithium inserted and extracted into/from graphite that is an active material is prevented from varying is provided. The secondary battery includes a negative electrode including a current collector and graphite provided over the current collector, and a positive electrode. The graphite includes a plurality of graphene layers. Surfaces of the plurality of graphene layers are provided substantially along the direction of an electric field generated between the positive electrode and the negative electrode. | 01-23-2014 |
20140099554 | MATERIAL FOR ELECTRODE OF POWER STORAGE DEVICE, POWER STORAGE DEVICE, AND ELECTRICAL APPLIANCE - To improve the reliability of a power storage device. A granular active material including carbon is used, and a net-like structure is formed on part of a surface of the granular active material. In the net-like structure, a carbon atom included in the granular active material is bonded to a silicon atom or a metal atom through an oxygen atom. Formation of the net-like structure suppresses reductive decomposition of an electrolyte solution, leading to a reduction in irreversible capacity. A power storage device using the above active material has high cycle performance and high reliability. | 04-10-2014 |
20140127566 | POWER STORAGE DEVICE ELECTRODE, METHOD FOR FORMING THE SAME, POWER STORAGE DEVICE, AND ELECTRICAL DEVICE - Irreversible capacity which causes a decrease in the charge and discharge capacity of a power storage device is reduced, and electrochemical decomposition of an electrolyte solution and the like on a surface of an electrode is inhibited. Further, the cycle characteristics of the power storage device is improved by reducing or inhibiting a decomposition reaction of the electrolyte solution and the like occurring as a side reaction in repeated charging and discharging of the power storage device. A power storage device electrode includes a current collector and an active material layer that is over the current collector and includes a binder and an active material. A coating film is provided on at least part of a surface of the active material. The coating film is spongy. | 05-08-2014 |
20140184165 | POWER STORAGE DEVICE AND POWER STORAGE SYSTEM - To provide a power storage device, an operation condition of which is easily analyzed. A secondary battery includes a sensor that is a measurement unit, a microcontroller unit that is a determination unit, and a memory that is a memory unit. With the sensor, conditions of the secondary battery such as the remaining battery power, the voltage, the current, and the temperature are measured. The microcontroller unit performs arithmetic processing of the measurement results and determines the operation condition of the secondary battery. Further, the microcontroller unit stores the measurement result in the memory in accordance with the operation condition of the secondary battery. | 07-03-2014 |
20140234700 | ELECTRODE FOR STORAGE BATTERY - With a small amount of a conductive additive, an electrode for a storage battery including an active material layer which is highly filled with an active material is provided. The use of the electrode enables fabrication of a storage battery having high capacity per unit volume of the electrode. By using graphene as a conductive additive in an electrode for a storage battery including a positive electrode active material, a network for electron conduction through graphene is formed. Consequently, the electrode can include an active material layer in which particles of an active material are electrically connected to each other by graphene. Therefore, graphene is used as a conductive additive in an electrode for a sodium-ion secondary battery including an active material with low electric conductivity, for example, an active material with a band gap of 3.0 eV or more. | 08-21-2014 |
20140370184 | Electrical Appliance - An object is to increase the conductivity of an electrode including active material particles and the like, which is used for a battery. Two-dimensional carbon including 1 to 10 graphenes is used as a conduction auxiliary agent, instead of a conventionally used conduction auxiliary agent extending only one-dimensionally at most, such as graphite particles, acetylene black, or carbon fibers. A conduction auxiliary agent extending two-dimensionally has higher probability of being in contact with active material particles or other conduction auxiliary agents, so that the conductivity can be improved. | 12-18-2014 |
20150086860 | POWER STORAGE DEVICE - A power storage device with reduced initial irreversible capacity is provided. The power storage device includes a positive electrode, a negative electrode, and an electrolyte solution. The negative electrode includes a negative electrode active material and a water-soluble polymer. The electrolyte solution includes an ionic liquid. The ionic liquid includes a cation and a monovalent amide anion. | 03-26-2015 |
Patent application number | Description | Published |
20080230723 | Beam homogenizer, laser irradiation apparatus, and method for manufacturing semiconductor device - The present invention provides a beam homogenizer being able to form a rectangular beam spot having homogeneous energy distribution in a direction of its major axis without using the optical lens requiring to be manufactured with high accuracy. In addition, the present invention provides a laser irradiation apparatus being able to irradiate the laser beam having homogeneous energy distribution in a direction of its major axis. Furthermore, the present invention provides a method for manufacturing a semiconductor device being able to enhance crystallinity in the surface of the substrate and to manufacture TFT with a high operating characteristic. | 09-25-2008 |
20080318398 | Method for manufacturing crystalline semiconductor film and semiconductor device - There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized. At that time, an energy period in a length direction in a laser beam spot of the laser beam is 0.5 μm to 10 μm, preferably, 1 μm to 5 μm; an energy distribution in a width direction in a laser beam spot of the laser beam is a Gaussian distribution; and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region. | 12-25-2008 |
20110201183 | METHOD FOR MANUFACTURING CRYSTALLINE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - There is provided a method for manufacturing a crystalline semiconductor film. An insulating film is formed over a substrate; an amorphous semiconductor film is formed over the insulating film; a cap film is formed over the amorphous semiconductor film; the amorphous semiconductor film is scanned and irradiated with a continuous wave laser beam or a laser beam with a repetition rate of greater than or equal to 10 MHz, through the cap film; and the amorphous semiconductor film is melted and crystallized At this time, an energy distribution in a length direction and a width direction in a laser beam spot is a Gaussian distribution, and the amorphous semiconductor film is scanned with the laser beam so as to be irradiated with the laser beam for a period of greater than or equal to 5 microseconds and less than or equal to 100 microseconds per region. | 08-18-2011 |
20110230037 | BEAM HOMOGENIZER, LASER IRRADIATION APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The present invention provides a beam homogenizer being able to form a rectangular beam spot having homogeneous energy distribution in a direction of its major axis without using the optical lens requiring to be manufactured with high accuracy. In addition, the present invention provides a laser irradiation apparatus being able to irradiate the laser beam having homogeneous energy distribution in a direction of its major axis. Furthermore, the present invention provides a method for manufacturing a semiconductor device being able to enhance crystallinity in the surface of the substrate and to manufacture TFT with a high operating characteristic. | 09-22-2011 |
20110256695 | BEAM HOMOGENIZER, LASER IRRADIATION APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The energy distribution of the beam spot on the irradiated surface changes due to the change in the oscillation condition of the laser or before and after the maintenance. The present invention provides an optical system for forming a rectangular beam spot on an irradiated surface including a beam homogenizer for homogenizing the energy distribution of the rectangular beam spot on the irradiated surface in a direction of its long or short side. The beam homogenizer includes an optical element having a pair of reflection planes provided oppositely for reflecting the laser beam in the direction where the energy distribution is homogenized and having a curved shape in its entrance surface. The entrance surface of the optical element means a surface of the optical element where the laser beam is incident first. | 10-20-2011 |
20110275191 | Method of Manufacturing Semiconductor Device - A method of forming a semiconductor device is provided, including a step of forming a layer which absorbs light over one face of a first substrate, a step of providing a second substrate over the layer which absorbs light, a step of providing a mask to oppose the other face of the first substrate, and a step of transferring the part of the layer which absorbs light to the second substrate by irradiating the layer which absorbs light with a laser beam through the mask. | 11-10-2011 |
20140011343 | LASER IRRADIATION METHOD, LASER IRRADIATION APPARATUS, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - In the present invention, each laser light emitted from a plurality of lasers is divided, and laser light including at least one laser light that is emitted from a different laser and that has different energy distribution is synthesized with another such laser light, or laser light including at least one laser light that has different energy distribution is synthesized with another such laser light through a convex lens that is set at an angle to the direction each laser light travels, to form laser light having excellent uniformity in energy distribution. | 01-09-2014 |
20140099781 | BEAM HOMOGENIZER, LASER IRRADIATION APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The energy distribution of the beam spot on the irradiated surface changes due to the change in the oscillation condition of the laser or before and after the maintenance. The present invention provides an optical system for forming a rectangular beam spot on an irradiated surface including a beam homogenizer for homogenizing the energy distribution of the rectangular beam spot on the irradiated surface in a direction of its long or short side. The beam homogenizer includes an optical element having a pair of reflection planes provided oppositely for reflecting the laser beam in the direction where the energy distribution is homogenized and having a curved shape in its entrance surface. The entrance surface of the optical element means a surface of the optical element where the laser beam is incident first. | 04-10-2014 |