Patent application number | Description | Published |
20090309463 | BRUSHLESS ELECTROMECHANICAL MACHINE - An electromechanical machine having a stator and a rotor, the stator including at least one stator module of N toroid shaped electromagnets, the electromagnets arranged along an arc a predetermined distance apart defining a stator arc length. Each of the electromagnets has at least one gap. The rotor includes a disc adapted to pass through the at least one gap. The disc includes a plurality of permanent magnets spaced side by side about a periphery thereof and arranged so as to have alternating north-south polarities. The permanent magnets are sized and spaced such that within the stator arc length the ratio of permanent magnets to electromagnets is N+1 to N, where N is the number of electrical excitation phases applied to the electromagnets. | 12-17-2009 |
20110111136 | PRECURSOR VAPOR GENERATION AND DELIVERY SYSTEM WITH FILTERS AND FILTER MONITORING SYSTEM - A vapor delivery system for supplying vapor to a chamber in a plasma-enhanced chemical vapor deposition (PECVD) system includes a vapor supply that supplies vapor by vaporizing at least one liquid precursor in a carrier gas. A first path includes a first filter that filters the vapor flowing from the vapor supply to the chamber. At least one second path is parallel to the first path and includes a second filter that filters vapor flowing from the vapor supply to the chamber. A plurality of valves are configured to switch delivery of the vapor to the chamber between the first path and the second path. | 05-12-2011 |
20110285254 | SELF-STARTING ELECTROMOTOR - A self-starting electromotor having a stator and a rotor, the stator including at least one stator module of N toroid shaped electromagnets, the electromagnets arranged along an arc a predetermined distance apart defining a stator arc length. Each of the electromagnets has at least one gap. The rotor includes a disc adapted to pass through the at least one gap. The disc includes a plurality of permanent magnets spaced side by side about a periphery thereof and arranged so as to have alternating north-south polarities. The permanent magnets are sized and spaced such that within the stator arc length the ratio of permanent magnets to electromagnets is N+1 to N, to where N is the number of electrical excitation phases applied to the electromagnets. | 11-24-2011 |
20120164834 | Variable-Density Plasma Processing of Semiconductor Substrates - Methods and hardware for generating variable-density plasmas are described. For example, in one embodiment, a process station comprises a showerhead including a showerhead electrode and a substrate holder including a mesa configured to support a substrate, wherein the substrate holder is disposed beneath the showerhead. The substrate holder includes an inner electrode disposed in an inner region of the substrate holder and an outer electrode being disposed in an outer region of the substrate holder. The process station further comprises a plasma generator configured to generate a plasma in a plasma region disposed between the showerhead and the substrate holder, and a controller configured to control the plasma generator, the inner electrode, the outer electrode, and the showerhead electrode to effect a greater plasma density in an outer portion of the plasma region than in an inner portion of the plasma region. | 06-28-2012 |
20120222815 | HYBRID CERAMIC SHOWERHEAD - Various implementations of hybrid ceramic faceplates for substrate processing showerheads are provided. The hybrid ceramic showerhead faceplates may include an electrode embedded within the ceramic material of the faceplate, as well as a pattern of through-holes. The electrode may be fully encapsulated within the ceramic material with respect to the through-holes. In some implementations, a heater element may also be embedded within the hybrid ceramic showerhead faceplate. A DC voltage source may be electrically connected with the hybrid ceramic showerhead faceplate during use. The hybrid ceramic faceplates may be easily removable from the substrate processing showerheads for easy cleaning and faceplate replacement. | 09-06-2012 |
20130092086 | MECHANICAL SUPPRESSION OF PARASITIC PLASMA IN SUBSTRATE PROCESSING CHAMBER - A system for reducing parasitic plasma in a semiconductor process comprises a first surface and a plurality of dielectric layers that are arranged between an electrode and the first surface. The first surface and the electrode have substantially different electrical potentials. The plurality of dielectric layers defines a first gap between the electrode and one of the plurality of dielectric layers, a second gap between adjacent ones of the plurality of dielectric layers, and a third gap between a last one of the plurality of dielectric layers and the first surface. A number of the plurality of dielectric layers and sizes of the first gap, the second gap and the third gap are selected to prevent parasitic plasma between the first surface and the electrode during the semiconductor process. | 04-18-2013 |
20140080324 | MULTI-STATION SEQUENTIAL CURING OF DIELECTRIC FILMS - The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station. | 03-20-2014 |
20140096834 | METHOD FOR SUPPLYING VAPORIZED PRECURSOR - A method for supplying vapor to a chamber includes providing a first diverter valve that, when open, diverts vapor away from the chamber, and a second diverter valve that, when open, supplies the vapor to the chamber; supplying a carrier gas to the chamber; after supplying the carrier gas, creating plasma in the chamber while a substrate is in the chamber; opening the first diverter valve and closing the second diverter valve; supplying the vapor by vaporizing at least one liquid precursor in a carrier gas; after a first predetermined period sufficient for the vapor to reach steady-state flow, closing the first diverter valve and opening the second diverter valve to supply the vapor to the chamber; and after a second predetermined period following the first predetermined period, opening the first diverter valve and closing the second diverter valve to stop supplying the vapor to the chamber. | 04-10-2014 |
20140238608 | CERAMIC SHOWERHEAD WITH EMBEDDED RF ELECTRODE FOR CAPACITIVELY COUPLED PLASMA REACTOR - A showerhead assembly for a substrate processing system includes a back plate connected to a gas channel. A face plate is connected adjacent to a first surface of the back plate and includes a gas diffusion surface. An electrode is arranged in one of the back plate and the face plate and is connected to one or more conductors. A gas plenum is defined between the back plate and the face plate and is in fluid communication with the gas channel. The back plate and the face plate are made of a non-metallic material. | 08-28-2014 |