Patent application number | Description | Published |
20130146909 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a semiconductor layer including a light emitting layer, a p-side electrode provided on a second surface of the semiconductor layer, and an n-side electrode provided on the semiconductor layer to be separated from the p-side electrode. The p-side electrode includes a plurality of contact metal selectively provided on the semiconductor layer in contact with the second surface, a transparent film provided on the semiconductor layer in contact with the second surface between the plurality of contact metal, and a reflective metal provided on the contact metal and on the transparent film in contact with the contact metal, the reflective metal including silver. A surface area of a surface of the reflective metal on the light emitting layer side is greater than the sum total of a surface area of the plurality of contact metal contacting the semiconductor layer. | 06-13-2013 |
20130240930 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a light emitting device includes a first base section, a light emitting section, and a first wiring section. The light emitting section is embedded on a first surface side of the first base section. The light emitting section includes a light emitting element. The first wiring section is provided on the first surface of the first base section. The first wiring section is connected to the light emitting element. | 09-19-2013 |
20130240931 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a light emitting device includes a light emitting element, a translucent section, and a light distribution control section. The light emitting element includes a first surface. The first surface emits light. The translucent section is provided on the first surface. The light distribution control section is provided on a periphery of the first surface. The light distribution control section has a lower refractive index than the translucent section. | 09-19-2013 |
20130248917 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes a light emitting unit, a first and second electrode, a first and second metal pillar, a sealing unit, a rectifying element, and a first and second interconnection. The light emitting unit includes a first and second semiconductor layer, and a light-emitting layer. The light-emitting layer is provided on the first semiconductor layer. The second semiconductor layer is provided on the light-emitting layer. The first electrode is provided on the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The first metal pillar is electrically connected to the first electrode. The second metal pillar is electrically connected to the second electrode. The sealing unit seals the first metal pillar and the second metal pillar. The rectifying element is provided below the first semiconductor layer, including a rectifying unit. | 09-26-2013 |
20130285011 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer. | 10-31-2013 |
20130285064 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The semiconductor layer has a first face, a second face opposite to the first face, and a light emitting layer. The p-side electrode is provided on the second face in an area including the light emitting layer. The n-side electrode is provided on the second face in an area not including the light emitting layer. The phosphor layer is provided on the first face. The phosphor layer includes a transparent resin and phosphor dispersed in the transparent resin. The transparent film is provided on the phosphor layer and has an adhesiveness lower than an adhesiveness of the transparent resin. | 10-31-2013 |
20130285077 | LIGHT EMITTING MODULE - According to one embodiment, a light emitting module includes a mounting substrate, a plurality of light emitting chips, a transparent layer, and a phosphor layer. The transparent layer is provided between the plurality of light emitting chips on the mounting face and on the light emitting chip. The transparent layer has a first transparent body and a scattering agent dispersed at least in the first transparent body between the plurality of light emitting chips. The scattering agent has a different refraction index from a refraction index of the first transparent body. The phosphor layer is provided on the transparent layer. The light emitting chip includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side external terminal, and an n-side external terminal. | 10-31-2013 |
20130285089 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment, a semiconductor light emitting device includes a semiconductor layer including a light emitting layer and a fluorescent substance excited by light emitted from the light emitting layer, a peak wavelength of a radiation spectrum of the light emitting layer at a room temperature being shorter than a peak wavelength of an excitation spectrum of the fluorescent substance. | 10-31-2013 |
20130285090 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light. | 10-31-2013 |
20130285091 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a method for manufacturing a semiconductor light emitting device includes steps for forming a fluorescent substance layer on a first face of a semiconductor layer and forming a light shielding film on the side face of the fluorescent substance layer. The fluorescent substance layer includes a resin and fluorescent substances dispersed in the resin, and have a light emitting face on a side opposite to the first face of the semiconductor layer and a side face connecting to the light emitting face with an angle of 90 degree or more between the light emitting face and the side face. The light shielding film shields a light emitted from a light emitting layer included in the semiconductor layer and a light radiated from the fluorescent substances. | 10-31-2013 |
20130285536 | WAVELENGTH CONVERTER AND SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment, a wavelength converter includes a resin allowing light emitted from a light source to pass through, a plurality of particle-shaped fluorescent substances dispersed in the resin, and fillers dispersed in the resin with a particle diameter smaller than the fluorescent substance. The fluorescent substances absorb the light emitted from the light source and emits fluorescence having a wavelength different from a wavelength of the light emitted from the light source; and a distribution of the fillers has higher density near the fluorescent substance than a density at a middle position between the fluorescent substances adjacent to each other. | 10-31-2013 |
20130313581 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING MODULE - According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface. | 11-28-2013 |
20130313588 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection. | 11-28-2013 |
20130313589 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT SOURCE UNIT - According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, n-side electrode and a resin layer. The semiconductor layer has a first face and a second face opposite to the first face, and includes a light emitting layer. The p-side electrode is provided on the semiconductor layer on the second face side. The n-side electrode is provided on the semiconductor layer on the second face side. The resin layer is provided on the first face and transmits light emitted from the light emitting layer, the resin layer including a top surface opposite to the first face and four side faces provided along an outer edge of the first face and connected to the top surface, the resin layer including a scattering substance scattering the light emitted from the light emitting layer. | 11-28-2013 |
20130313590 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section. | 11-28-2013 |
20130313591 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode and an insulating layer. The semiconductor layer has a first face and a second face opposite to the first face, and includes a light emitting layer. The p-side electrode is provided in a region including the light emitting layer on the second face side, and the n-side electrode is provided in a region not including the light emitting layer on the second face side. The insulating layer covers the semiconductor layer, the p-side electrode, and the n-side electrode on the second face side, and includes at least a portion containing a magnetic substance. | 11-28-2013 |
20130313592 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, an second electrode, a first insulating film, a first interconnection and a second interconnection. The semiconductor layer includes a luminous portion and a non-luminous portion. The first electrode is provided on the luminous portion, and the second electrode is provided on the non-luminous portion. The first insulating film is provided on the semiconductor layer, the first electrode and the second electrode. The first interconnection having a first protrusion is provided on the first insulating film and electrically connected to the first electrode. The second interconnection having a second protrusion is provided on the first insulating film and electrically connected to the second electrode. A tip end of the first protrusion faces a tip end of a second protrusion, being apart therefrom with a minimum gap between the first interconnection and the second interconnection. | 11-28-2013 |
20130320371 | DEVICE MODULE - According to one embodiment, a device module includes a mounting substrate, a device, and a bonding agent. The mounting substrate has a mounting surface and a plurality of pads. The device includes a plurality of electrode surfaces arranged in a first direction. The pad has a first width portion and a second width portion. The first width portion has a width in a second direction orthogonal to the first direction. The second width portion is wider than the first width portion and the electrode surfaces in the second direction. One end portion in the first direction of the electrode surface is bonded to the pad on the first width portion via the bonding agent. The other end portion in the first direction of the electrode surface is bonded to the pad on the second width portion via the bonding agent. | 12-05-2013 |
20140001502 | SEMICONDUCTOR LIGHT EMITTING DEVICE | 01-02-2014 |
20140191258 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes not less than three chips. Each of the chips includes a semiconductor layer having a first face, a second face formed on a side opposite to the first face, and a light emitting layer, a p-side electrode, and an n-side electrode. The chips include a central chip centrally positioned in a plan view, and at least two peripheral chips arranged symmetrically to each other sandwiching the central chip in the plan view. A thickness of the fluorescent body layer on the first face is same among the peripheral chips, and the fluorescent body layer on the first face of the central chip and the fluorescent body layers on the first faces of the peripheral chips have thicknesses different from each other. | 07-10-2014 |
20140203313 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes: a mounting substrate; a semiconductor light emitting element; a first resin; and a second resin. The semiconductor light emitting element includes: a semiconductor layer including a light emitting layer; a p-side electrode; a p-side interconnection unit; an n-side electrode; and an n-side interconnection unit. The first resin covers a periphery of the semiconductor light emitting element on the substrate and contains a phosphorescent substance capable of being excited by emission light of the light emitting layer. The second resin is provided on the first resin layer and the semiconductor light emitting element and contains a fluorescent body capable of being excited by emission light of the light emitting layer to emit light of a different peak wavelength from emission light of the light emitting layer. | 07-24-2014 |
20140217438 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer; a first electrode; a first interconnection layer; a second electrode; a second interconnection layer; a support substrate; a bonding layer; a first terminal; and a second terminal. The support substrate has a third face facing the semiconductor layer, the first interconnection layer, and the second interconnection layer and a fourth face opposite to the third face. The support substrate has a first opening extending from the fourth face to the first interconnection layer and a second opening extending from the fourth face to the second interconnection layer. The bonding layer is provided between the support substrate and each of the semiconductor layer, the first interconnection layer, and the second interconnection layer. | 08-07-2014 |
20140231842 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating film, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar, a second insulating film and a fluorescent material layer. The first electrode is provided in an emitting region of the semiconductor layer. The first electrode, the first insulating film, the first interconnection layer, the second interconnection layer, and the second insulating layer are configured to transmit radiated light of the light emitting layer. | 08-21-2014 |
20140231843 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode and a fluorescent material layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The fluorescent material layer includes a plurality of fluorescent materials and a bonding material integrating the fluorescent materials. The fluorescent material layer includes a lower layer portion provided to spread over the entire first surface and having a larger thickness than a size of the fluorescent materials and an upper layer portion partially provided on the lower layer portion and having a larger thickness and a larger width than a size of the fluorescent materials. The fluorescent materials do not exist on a portion of the lower layer portion not provided with the upper layer portion. | 08-21-2014 |
20140231844 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a first bonding material. The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials and a second bonding material. The scattering materials are configured to scatter radiated light of the light emitting layer. The second bonding material integrates the scattering materials. | 08-21-2014 |
20140231845 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a reflection film. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a bonding material. The bonding material integrates the fluorescent materials. The reflection film is partially provided on the fluorescent material layer and has a higher reflectance to the radiated light of the light emitting layer than to the radiated light of the fluorescent materials. | 08-21-2014 |
20150034985 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, the optical layer has a larger planar size than the semiconductor layer. The optical layer is transmissive to emission light of the light emitting layer. The first insulating film is provided on a side surface of the semiconductor layer continued from the first surface. The metal film includes a first reflective part covering the side surface of the semiconductor layer via the first insulating film. The metal film includes a second reflective part opposed to the optical layer in a region around the side surface of the semiconductor layer and extending from the first reflective part toward a side opposite from the side surface of the semiconductor layer. | 02-05-2015 |
20150123159 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, an second electrode, a first insulating film, a first interconnection and a second interconnection. The semiconductor layer includes a luminous portion and a non-luminous portion. The first electrode is provided on the luminous portion, and the second electrode is provided on the non-luminous portion. The first insulating film is provided on the semiconductor layer, the first electrode and the second electrode. The first interconnection having a first protrusion is provided on the first insulating film and electrically connected to the first electrode. The second interconnection having a second protrusion is provided on the first insulating film and electrically connected to the second electrode. A tip end of the first protrusion faces a tip end of a second protrusion, being apart therefrom with a minimum gap between the first interconnection and the second interconnection. | 05-07-2015 |
20150147828 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a first bonding material. The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials and a second bonding material. The scattering materials are configured to scatter radiated light of the light emitting layer. The second bonding material integrates the scattering materials. | 05-28-2015 |
20150221828 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, a p-side electrode, a plurality of n-side electrodes, a first insulating film, a p-side interconnect unit, and an n-side interconnect unit. The p-side interconnect unit is provided on the first insulating film to connect to the p-side electrode through a first via piercing the first insulating film. The n-side interconnect unit is provided on the first insulating film to commonly connect to the plurality of n-side electrodes through a second via piercing the first insulating film. The plurality of n-side regions is separated from each other without being linked at the second surface. The p-side region is provided around each of the n-side regions at the second surface. | 08-06-2015 |
20150364664 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first interconnection section, a second interconnection section, and a varistor film. The semiconductor layer includes a light emitting layer. The first electrode is provided in a emitting region on the second surface. The second electrode is provided in a non-emitting region on the second surface. The first interconnection section is provided on the first electrode and electrically connected to the first electrode. The second interconnection section is provided on the second electrode and on the first electrode and electrically connected to the second electrode. The varistor film is provided in contact with the first electrode and the second interconnection section between the first electrode and the second interconnection section. | 12-17-2015 |