Patent application number | Description | Published |
20100307573 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A solar cell comprises a p-type layer, an i-type layer, and an n-type layer, the p-type layer comprises a high-absorption amorphous silicon carbide layer and a low-absorption amorphous silicon carbide layer which have different absorption coefficients with respect to light of a wavelength of 600 nm along a thickness direction, and a buffer layer is provided between the low-absorption amorphous silicon carbide layer and the i-type layer. | 12-09-2010 |
20100307574 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - A solar cell comprises a p-type layer ( | 12-09-2010 |
20100307583 | SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A solar cell comprises an amorphous silicon solar cell unit in which a p-type layer, an i-type layer, and an n-type layer are laminated. The p-type layer includes a high-concentration amorphous silicon carbide layer doped with a p-type dopant and an amorphous silicon buffer layer which is substantially undoped with the p-type dopant. Then, a band gap of the amorphous silicon buffer layer is defined to be 1.65 eV or greater. | 12-09-2010 |
20100326507 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - In a manufacturing method of a thin film solar cell in which a p-type layer, an i-type layer, and an n-type layer are layered, the i-type layer is an amorphous silicon layer, the n-type layer is a microcrystalline silicon layer, and in a process of forming the n-type layer, a doping concentration of an n-type dopant is increased as a distance from the i-type layer is increased. | 12-30-2010 |
20100330734 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - In a manufacturing process of a solar cell comprising an amorphous silicon unit in which a p-type layer, an i-type layer, and an n-type layer are layered, in a step of forming the p-type layer, a doping concentration of a p-type dopant included in the p-type layer is increased as a distance from the i-type layer is increased, and in particular, a high-absorption amorphous silicon carbide layer and a low-absorption amorphous silicon carbide layer are consecutively formed while a state of plasma generation is maintained. | 12-30-2010 |
20110073153 | PHOTOVOLTAIC DEVICE AND MANUFACTURING METHOD THEREOF - In a structure in which a plurality of structures, having a transparent electrode, a photovoltaic unit, and a backside electrode sequentially layered over a transparent substrate, are connected in series, a insulating groove is formed in a panel periphery in a direction intersecting the direction of series connection in which the transparent electrode, the photovoltaic unit, and the backside electrode are removed, and a separating groove is formed in a region near the separating groove and parallel to the separating groove in which the transparent electrode is left and at least the backside electrode is removed. | 03-31-2011 |
20120145239 | PHOTOELECTRIC CONVERTER AND METHOD FOR PRODUCING SAME - A photoelectric conversion device is provided wherein variance of photoelectric conversion efficiency within a panel plane is reduced. A method of manufacturing a photoelectric conversion device having a microcrystalline silicon photoelectric conversion unit ( | 06-14-2012 |
20120266948 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR PRODUCING SAME - In order to increase photoelectric conversion efficiency in a photoelectric conversion device, there is disclosed a photoelectric converter containing a photoelectric conversion unit in which a p-type layer ( | 10-25-2012 |
20120305053 | SOLAR CELL AND MANUFACTURING METHOD THEREOF - Disclosed is a solar cell which allows more photogenerated carriers to be extracted while improving power generation efficiency. The solar cell has a light-receiving surface electrode layer ( | 12-06-2012 |