Patent application number | Description | Published |
20130014984 | ELECTROMAGNETIC WAVE ABSORBER, METHOD OF PRODUCING THE SAME, FLEXIBLE PRINTED WIRING BOARD AND ELECTRONIC DEVICEAANM Iida; HironoriAACI KanagawaAACO JPAAGP Iida; Hironori Kanagawa JPAANM Yamanoi; ShunAACI KanagawaAACO JPAAGP Yamanoi; Shun Kanagawa JPAANM Minatoya; MachikoAACI TokyoAACO JPAAGP Minatoya; Machiko Tokyo JPAANM Tabata; SeiichiroAACI KanagawaAACO JPAAGP Tabata; Seiichiro Kanagawa JPAANM Yamada; ShinichiroAACI KanagawaAACO JPAAGP Yamada; Shinichiro Kanagawa JPAANM Kanno; MasayoshiAACI KanagawaAACO JPAAGP Kanno; Masayoshi Kanagawa JPAANM Mitsugi; MasakazuAACI KanagawaAACO JPAAGP Mitsugi; Masakazu Kanagawa JPAANM Kato; YoshihiroAACI KanagawaAACO JPAAGP Kato; Yoshihiro Kanagawa JP - Provided is an electromagnetic wave absorber, including a base material and a porous carbon material containing, as a raw material, a plant-based material having a silicon content of 5% by mass or more, in which the porous carbon material has a specific surface area value as measured by the nitrogen BET method of 400 m | 01-17-2013 |
20130209779 | THREE-DIMENSIONAL SHAPED ARTICLE, METHOD OF PRODUCING THREE-DIMENSIONAL SHAPED ARTICLE, AND LIQUID COMPOSITE FOR PRODUCING THREE-DIMENSIONAL SHAPED ARTICLE - Provided is a liquid composite for producing a three-dimensional shaped article, the liquid composite being used in an inkjet printer, the liquid composite including a porous carbon material having a specific surface area value as measured by the nitrogen BET method of 10 m | 08-15-2013 |
20130250398 | FINE PARTICLES FOR IMAGE DISPLAY, METHOD FOR PRODUCING THE SAME, ELECTROPHORETIC DISPERSION LIQUID, AND IMAGE DISPLAY DEVICE - Fine particles for image display having excellent properties and displaying images in black on the basis of electrophoresis are provided. | 09-26-2013 |
20140011666 | POROUS CARBON MATERIAL, ADSORBENT, ORAL ADSORBENT, MEDICAL ADSORBENT, FILLER FOR BLOOD PURIFICATION COLUMN, WATER PURIFICATION ADSORBENT, CLEANSING AGENT, CARRIER, SUSTAINED RELEASE PHARMACEUTICAL, CELL CULTURE SCAFFOLD, MASK, CARBON/POLYMER COMPOSITE, ADSORBENT SHEET AND FUNCTIONAL FOOD - [Object] To provide a porous carbon material that is able to adsorb desired substances efficiently. | 01-09-2014 |
20140146383 | ELECTROPHORETIC DEVICE, DISPLAY UNIT, AND ELECTRONIC APPARATUS - An electrophoretic device includes: a porous layer including a first fibrous structure and a non-electrophoretic particle held in the first fibrous structure; an electrophoretic particle configured to move through a space formed at the porous layer; a second fibrous structure covering the porous layer; and a partition provided from the porous layer to the second fibrous structure. | 05-29-2014 |
20150124312 | DISPLAY UNIT AND ELECTRONIC APPARATUS - A display unit includes: a first substrate; a second substrate facing the first substrate; a display layer provided between the first substrate and the second substrate and allowed to control light transmission or light reflection; and a seal layer including an additive and provided between the first substrate and the display layer. | 05-07-2015 |
20150227017 | ELECTROPHORESIS DEVICE, DISPLAY UNIT, AND ELECTRONIC APPARATUS - An electrophoresis device including: in an insulating liquid, migrating particles in a charged state; and a porous layer including a fibrous structure and non-migrating particles, the fibrous structure having a potential opposite to that of the migrating particles, and the non-migrating particles held by the fibrous structure. | 08-13-2015 |
20150293425 | ELECTROPHORETIC DEVICE AND DISPLAY UNIT - The present disclosure relates to a display apparatus that includes a first layer ( | 10-15-2015 |
20160091771 | ELECTROPHORETIC DEVICE, DISPLAY UNIT, AND ELECTRONIC APPARATUS - An electrophoretic device includes: a porous layer including a first fibrous structure and a non-electrophoretic particle held in the first fibrous structure; an electrophoretic particle configured to move through a space formed at the porous layer; a second fibrous structure covering the porous layer; and a partition provided from the porous layer to the second fibrous structure. | 03-31-2016 |
Patent application number | Description | Published |
20120235168 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part. | 09-20-2012 |
20120292631 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part. | 11-22-2012 |
20120292649 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer. | 11-22-2012 |
20130075374 | MEMBER SEPARATION APPARATUS AND MEMBER SEPARATION METHOD - According to one embodiment, a member separation apparatus includes a stage and a light source. The stage is configured to mount a workpiece. The workpiece includes a first member and a second member. The first member is transmissive to light in a wavelength region. The wavelength region includes a first wavelength. The second member contacts with the first member. The second member has a higher absorptance for light in the wavelength region than the first member. The light source generates laser light and irradiates the workpiece with the laser light. The laser light contains a component of the first wavelength and a component of a second wavelength. The second wavelength includes the wavelength region different from the first wavelength. | 03-28-2013 |
20130234178 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a silicon substrate, a buffer layer, a foundation semiconductor layer, a first semiconductor layer, a light emitting unit and a second semiconductor layer. The buffer layer is provided on a part of a major surface of the silicon substrate. The foundation semiconductor layer is crystal-grown from an upper surface of the buffer layer, covers a non-formed region of the major surface where the buffer layer is not provided, and is spaced apart from the non-formed region. The first semiconductor layer is provided on the foundation semiconductor layer and has a first conductivity type. The light emitting unit is provided on the first semiconductor layer. The second semiconductor layer is provided on the light emitting unit and has a second conductivity type. | 09-12-2013 |
20130234182 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer. | 09-12-2013 |
20130234298 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a method for manufacturing a semiconductor device includes a placement step and a bonding step. The placement step faces a semiconductor active portion toward a support substrate portion via a bonding portion disposed between the semiconductor active portion and the support substrate portion. The bonding portion includes a bonding layer and a light absorption layer, absorptance of the light absorption layer for laser light being higher than or equal to absorptance of the bonding layer for the laser light. The bonding step bonds the semiconductor active portion and the support substrate portion by irradiating the light absorption layer with the laser light through the support substrate portion and melting the bonding layer by thermal conduction from the light absorption layer heated by the laser light. | 09-12-2013 |
20130328055 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes first and second electrodes, first, second and third semiconductor layers, and a light emitting layer. The first semiconductor layer of a first conductivity type is provided on the first electrode. The light emitting layer is provided on the first semiconductor layer. The second semiconductor layer of a second conductivity type is provided on the light emitting layer. The third semiconductor layer with low impurity concentration is provided on a part of the second semiconductor layer. The second electrode includes a pad section and a narrow wire section. The pad section is provided on the third semiconductor layer. The narrow wire section extends out from the pad section and includes an extending portion extending along a plane perpendicular to a stacking direction. The narrow wire section is in contact with the second semiconductor layer. | 12-12-2013 |
20140054594 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer. | 02-27-2014 |
20140084316 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes: a stacked body and an insulative optical path control section. The stacked body includes: a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The first semiconductor layer, the second semiconductor layer, and the light emitting layer are stacked along a stacking direction. The insulative optical path control section penetrates through the second semiconductor layer and the light emitting layer, has a refractive index lower than refractive index of the first semiconductor layer, refractive index of the second semiconductor layer, and refractive index of the light emitting layer. The insulative optical path control section is configured to change traveling direction of light emitted from the light emitting layer. | 03-27-2014 |
20140138722 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes: a stacked body, a wavelength conversion layer, a first metal layer, and a first insulating section. The stacked body includes: a first and a second semiconductor layers; and a first light emitting layer provided between the first and the second semiconductor layers. The wavelength conversion layer is configured to convert wavelength of light emitted from the first light emitting layer. The first semiconductor layer is placed between the first light emitting layer and the wavelength conversion layer. The first metal layer is electrically connected to the second semiconductor layer. The first insulating section is provided between a first side surface and a first side surface portion of the first metal layer and between the wavelength conversion layer and the first side surface portion. | 05-22-2014 |
20140191269 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part. | 07-10-2014 |
20140252310 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor light emitting device includes a stacked body and an optical member. The stacked body includes a first semiconductor layer, a second semiconductor, and a light emitting layer. The second semiconductor layer is separated from the first semiconductor layer in a first direction. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The optical member is stacked with the stacked body in the first direction. The optical member is light-transmissive. The length of the optical member in the first direction is longer than a length of the first semiconductor layer in the first direction. The surface area of the optical member projected onto a plane perpendicular to the first direction is less than a surface area of the stacked body projected onto the plane. | 09-11-2014 |
20140264413 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes a stacked body, a first metal layer, and a second metal layer. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The second semiconductor layer is separated from the first semiconductor layer in a first direction. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first metal layer is stacked with the stacked body in the first direction to be electrically connected to one selected from the first semiconductor layer and the second semiconductor layer. The first metal layer has a side surface extending in the first direction. The second metal layer covers at least a portion of the side surface of the first metal layer. A reflectance of the second metal layer is higher than a reflectance of the first metal layer. | 09-18-2014 |
20140361248 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer. | 12-11-2014 |
20150048404 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer. | 02-19-2015 |
20150102381 | SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR CRYSTAL LAYER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a light emitting layer, a second semiconductor layer, and a low refractive index layer. The first semiconductor layer has a first major surface and a second major surface being opposite to the first major surface. The light emitting layer has an active layer provided on the second major surface. The second semiconductor layer is provided on the light emitting layer. The low refractive index layer covers partially the first major surface and has a refractive index lower than the refractive index of the first semiconductor layer. | 04-16-2015 |
20150236211 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer. | 08-20-2015 |
20150263230 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part. | 09-17-2015 |
20150333224 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes a stacked structure body, first and second electrodes. The stacked structure body includes first and second semiconductor layers and a light emitting layer provided between the second and first semiconductor layers, and has first and second major surfaces. The first electrode has a first contact part coming into contact with the first semiconductor layer. The second electrode has a part coming into contact with the second semiconductor layer. A surface of the first semiconductor layer on a side of the first major surface has a first part having a part overlapping a contact surface with the first semiconductor layer and a second part having a part overlapping the second semiconductor layer. The second part has irregularity. A pitch of the irregularity is longer than a peak wavelength of emission light. The first part has smaller irregularity than the second part. | 11-19-2015 |
20160035939 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes a stacked body, a first metal layer, and a second metal layer. The stacked body includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer. The second semiconductor layer is separated from the first semiconductor layer in a first direction. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first metal layer is stacked with the stacked body in the first direction to be electrically connected to one selected from the first semiconductor layer and the second semiconductor layer. The first metal layer has a side surface extending in the first direction. The second metal layer covers at least a portion of the side surface of the first metal layer. A reflectance of the second metal layer is higher than a reflectance of the first metal layer. | 02-04-2016 |
Patent application number | Description | Published |
20090157306 | Location Information Exchange Apparatus and Location Information Exchange Method - A location information exchange apparatus includes an information acquisition means | 06-18-2009 |
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20100318514 | CONTENT PLAYBACK DEVICE AND PROGRAM - A content playback device selects a region of pieces of additional information of contents to be played back in a random order in an order list | 12-16-2010 |
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20110125402 | NAVIGATION DEVICE - A navigation device calculates the distance difference between the position of a vehicle which is map-matched onto a road link, and the position acquired by perpendicular-mapping the actual position of the vehicle at a branch point onto the above-mentioned road link from the lane width K of a road lane along which the vehicle had been traveling before making a turn at the branch point, the lane width N of a road lane along which the vehicle has been traveling after making the turn, and the lane number B of the road lane before the branch point, the lane number A of the road lane after branch point, and the turning angle Θ of the vehicle at the branch point, so as to correct the vehicle position in such a way that the vehicle position is the above-mentioned perpendicular-mapped position. | 05-26-2011 |
20120130580 | ARTIFICIAL ENGINE SOUND CONTROL UNIT, APPROACHING VEHICLE AUDIBLE SYSTEM, AND ELECTRIC VEHICLE HAVING THEM - An artificial engine sound control unit which controls an artificial engine sound which is emitted from a sounding body which is provided at an electric vehicle whose at least a part of drive power is generated by an electric motor, to outside; comprising a speed region determination part which determines a speed region of the electric vehicle and an artificial engine sound generating part, when the speed region determination part determines such that the electric motor of the electric vehicle can be energized and the electric vehicle is stopped, the artificial engine sound generating part controls so as for the sounding body to emit an artificial engine sound, and the artificial engine sound generating part detects such that the electric vehicle comes close to a start running mode, then the artificial engine sound generating part controls the artificial engine sound which is emitted from the sounding body. | 05-24-2012 |
20120277957 | DRIVING ASSIST DEVICE - A driving assist device detects the position of a vehicle | 11-01-2012 |
20120320211 | VIHICLE SURROUNDINGS MONITORING DEVICE - A vehicle surroundings monitoring device carries out a position mapping process of expressing a positional relationship in the detection ranges of distance sensors | 12-20-2012 |
20120327239 | VEHICLE REAR VIEW MONITORING DEVICE - Because a vehicle rear view monitoring device changes the detection threshold level of each of distance sensors | 12-27-2012 |
20130002861 | CAMERA DISTANCE MEASUREMENT DEVICE - A camera distance measurement device displays an image in which a plurality of graduation lines which are arranged in the form of a grid with respect to a vehicle is superimposed on a camera image which is captured by a camera mounted to the vehicle on a display unit, and estimates a distance in a direction of the width of the vehicle, and a distance in a direction of the capturing by the camera from a unit distance defined for each grid side of the graduation lines. | 01-03-2013 |
20130010119 | PARKING ASSISTANCE APPARATUS, PARKING ASSISTANCE SYSTEM, AND PARKING ASSISTANCE CAMERA UNIT - An object is to provide a parking assistance apparatus capable of readily generating a guide line image showing guide lines used as targets when a vehicle is parked. | 01-10-2013 |
20130057690 | DRIVING ASSIST APPARATUS, DRIVING ASSIST SYSTEM, AND DRIVING ASSIST CAMERA UNIT - A driving assist apparatus acquires vehicle information which includes a gear state and speed of a vehicle; judges a state of preparing for movement, a state of starting movement, and a state during movement; generates a wide-angle image that is an image that can see a wide range although having distortion when the vehicle state is the state of preparing for movement or the state of starting movement; and generates a no-distortion image that is an image in which the distortion due to the lens shape and the distortion by the projection system are eliminated from the camera image when the vehicle state is the state during movement. | 03-07-2013 |
20130057723 | IMAGING SYSTEM, IMAGING DEVICE AND DISPLAY DEVICE - An object is to provide an imaging system for taking an image of a subject with high reproducibility. It includes an imaging device for taking a picture in accordance with imaging conditions which are set values concerning imaging, a display device for displaying the image taken with the imaging device in accordance with display conditions which are set values concerning display, and an imaging condition decision unit for determining imaging conditions corresponding to the display conditions. When the display device alters the display conditions, the imaging condition decision unit determines the imaging conditions corresponding to the display conditions after the alteration, and the imaging device alters the imaging conditions stored in an imaging condition altering unit to the imaging conditions the imaging condition decision unit determines. | 03-07-2013 |
20130063258 | ELECTRIC MOVING BODY ALARM SOUND CONTROL DEVICE - An electric moving body alarm sound control device that does not generate alarm sound more than necessary nor less than necessary is provided in electric moving bodies, such as hybrid vehicles and electric vehicles, excellent in quietness. An electric moving body alarm sound control device comprises an electric moving body noise detection unit that detects noise the electric moving body generates by itself; an electric moving body noise level comparison determination unit that determines the noise level the electric moving body generates, based on the detection signal detected by the electric moving body noise detection unit; and an alarm sound volume level control unit that takes control of the volume level of alarm sound a sound-emitting unit emits, based on the determination result by the electric moving body noise level comparison determination unit. | 03-14-2013 |
20130116857 | ENVIRONMENT ESTIMATION APPARATUS AND VEHICLE CONTROL SYSTEM - An environment estimation apparatus includes an image area dividing unit for dividing a camera image taken with a vehicle camera into a plurality of image areas, a camera image information extracting unit for extracting, from an image area that has the sky taken and is acquired from among the plurality of image areas undergoing the division by the image area dividing unit, image information indicating features of the image area, and an environment estimation unit for estimating, from the image information extracted by the camera image information extracting unit, the weather or intensity of light of a surrounding environment by referring to corresponding data indicating the correspondence between the features of the image area and the weather or the intensity of light of the surrounding environment. | 05-09-2013 |
20130128074 | DISPLAY UNIT, IMAGE SENSING UNIT AND DISPLAY SYSTEM - A host unit | 05-23-2013 |
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20150130942 | IMAGE PROCESSING DEVICE - An image processing device | 05-14-2015 |