Patent application number | Description | Published |
20080289568 | QUARTZ GLASS CRUCIBLE, PROCESS FOR PRODUCING THE SAME, AND USE - A crucible has a structure where a layer containing a crystallization accelerating component such as aluminum or the like (a crystallization accelerating layer) is inserted inside a quartz glass layer of a crucible straight body part excepting a crucible bottom part. The crucible does not deform and fall inwardly at the straight body part since a part containing a crystallization accelerating component advances to crystallize so as to increase strength at a high temperature when the crucible is used in pulling up silicon single crystal. Therefore, a single crystallization rate can be increased. Further, since the crystallization accelerating layer is inserted inside the quartz glass layer, the crystallization accelerating component, such as aluminum or barium, does not contact with silicon melt or a carbon susceptor, contamination by eluting these metals does not occurs. Further, since the crystallization accelerating layer is not provided at the crucible bottom part, there is no danger to crack due to thermal distortion at a time of pulling up silicon single crystal and melt leakage does not occur. | 11-27-2008 |
20090084308 | Easily crystallizable vitreous silica member, vitreous silica crucible and method for manufacturing single-crystal silicon - A vitreous silica member of the present invention is characterized by being formed of vitreous silica exhibiting the easily crystallizable property in the absence of a crystallization accelerator. The vitreous silica having the easily crystallizable property is obtained preferably by heating and melting crystalline quartz at a temperature in the range of 1,710° C. or more to 1,780° C. or less for vitrification, and controlling the fictive temperature of the glass to be in the range of 1,100° C. or more to 1,400° C. or less. The invention also includes a vitreous silica crucible and a method of pulling single-crystal silicon using this vitreous silica crucible. | 04-02-2009 |
20090145351 | VITREOUS SILICA CRUCIBLE - The present invention relates to a vitreous silica crucible for pulling up silicon single crystals by a pulling-up process having a first stage and a second stage after the first stage. The crucible comprises a transparent inner layer containing inner layer bubbles, and an outer layer containing outer layer bubbles. The second stage expansion coefficient X | 06-11-2009 |
20090165700 | INNER CRYSTALLIZATION CRUCIBLE AND PULLING METHOD USING THE CRUCIBLE - A vitreous silica crucible for pulling single-crystal silicon, comprising a surface glass layer having a thickness of 100 μm from an inner surface of the crucible, and a glass layer provided below the surface glass layer in a thickness direction of the crucible and extending to a depth of 1 mm from the inner surface of the crucible. The concentration of OH groups in the surface glass layer is 90 ppm or less, and the concentration of OH groups in the glass layer is equal to or more than 90 ppm and equal to or less than 200 ppm. The bubble content in the glass layer is 0.1% or less. | 07-02-2009 |
20090165701 | VITREOUS SILICA CRUCIBLE FOR PULLING SINGLE-CRYSTAL SILICON - A vitreous silica crucible for pulling single-crystal silicon, which is formed of vitreous silica and has a bottomed cylindrical shape, wherein, in a liquid-level movement range in the inner surface of the crucible, ranging from a position corresponding to the liquid surface level of a silicon melt at the time of stating the pulling of single-crystal silicon to a position corresponding to the liquid surface level of a silicon melt at the time of finishing the pulling of single-crystal silicon, the concentration of an OH group included in the vitreous silica is higher in an erosion thickness portion of the inner surface of the crucible than that in the range lower than the liquid surface level which is positioned below the liquid-level movement range | 07-02-2009 |
20100000465 | METHOD FOR PRODUCING VITREOUS SILICA CRUCIBLE - A method is provided for producing a vitreous silica crucible having excellent shape formability and fewer internal bubbles without excessively heating the curved portion and the bottom part. The method comprises arc melting a quartz powder molded product loaded in a rotating mold while performing vacuum suction, wherein the electrode is moved sideways with respect to the mold center line upon the initiation of arc melting or during the arc melting, and the arc melting is performed at an eccentric position, and preferably the time for total heating is limited to 60% or less of the total arc melting time. A vitreous silica crucible produced by this method is also provided. | 01-07-2010 |
20100005836 | METHOD FOR PRODUCING QUARTZ GLASS CRUCIBLE - A method of producing a quartz glass crucible by arc melting a quartz powder molded product loaded on the inner side of a mold while performing vacuum suction, includes initiating the melting of quartz powder from the rim edge of a quartz powder molded product, subsequently lowering the arc electrode or raising the mold to heat and melt the sections on the downside of the rim edge. The method is preferably carried out such that the inner surface of the crucible is sealed within a time corresponding to 10% of the total arc time starting from the initiation of arc melting, and the seal thickness is 3 mm or less. The quartz glass crucible thus produced is useful for the pulling up of silicon single crystals and has a uniform glass layer with fewer internal bubbles. | 01-14-2010 |
20100162760 | METHOD OF PRODUCING VITREOUS SILICA CRUCIBLE - A method for manufacturing a quartz glass crucible has a deposition step of depositing quartz powder on an inner wall surface of a bottomed cylindrical mold, while rotating the mold, and a melting step of obtaining the quartz glass crucible by vitrifying the quartz powder deposited on the inner wall surface of the mold by heating and melting the quartz powder. In the deposition step, under a state where the quantity of electrostatic charge of the quartz powder is controlled to be within a range of 1.0 kV or below in absolute value, the quartz powder is applied to the inner wall surface of the mold, and the thickness of the quartz glass crucible is controlled by maintaining the density of the quartz powder deposition layer on the inner wall surface of the mold within a fixed range. | 07-01-2010 |
20100229599 | METHOD AND APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - In order to provide method and apparatus for manufacturing a vitreous silica crucible with little mixing of foreign matter and stable arc during arc melting, the method and apparatus for manufacturing a vitreous silica crucible have a device which blows off air from the side of arc electrodes toward a melting space of a mold, and air discharge ports which discharge the air within the heating furnace, and perform forced supply of air into the melting space during melting to make the atmospheric pressure of the melting space higher than the surroundings, and preferably, form an air pressure difference of 100 Pa or more between the melting space and the surroundings, thereby performing melting. | 09-16-2010 |
20110165028 | METHOD FOR PURIFICATION OF SILICA PARTICLES, PURIFIER, AND PURIFIED SILICA PARTICLES - [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder. | 07-07-2011 |
20110165054 | METHOD FOR PURIFICATION OF SILICA PARTICLES, PURIFIER, AND PURIFIED SILICA PARTICLES - [Problems] To provide a treatment method having excellent purification effect, in which impurities having high ionicity in a silica powder can be removed in a short time, a apparatus thereof, and a purified silica powder. | 07-07-2011 |
20120141622 | APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - Provided is an apparatus for manufacturing a vitreous silica crucible which has a structure which can reduce gaps between a partition wall and electrodes inserted into through-holes formed in the partition wall while enabling electrodes to move to adjust a heating temperature of arc discharge. A plate-shaped partition wall | 06-07-2012 |
20120160155 | COMPOSITE CRUCIBLE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING SILICON CRYSTAL - The purpose of the present invention is to provide a crucible which has high viscosity at high temperature, and can be used for a long time, and can be manufactured at low cost, and a method of manufacturing the same. The composite crucible | 06-28-2012 |
20120160159 | VITREOUS SILICA CRUCIBLE FOR PULLING SILICON SINGLE CRYSTAL AND METHOD OF MANUFACTURING THE SAME - The present invention provides a vitreous silica crucible which can suppress the sidewall lowering of the crucible under high temperature during pulling a silicon single crystal, and a method of manufacturing such a vitreous silica crucible. The vitreous silica crucible | 06-28-2012 |
20120272687 | APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - Provided is an apparatus for manufacturing a vitreous silica crucible, which is capable of stably manufacturing a high quality vitreous silica crucible by stabilizing heat generation through an arc discharge. The apparatus for manufacturing a vitreous silica crucible includes a mold that defines a shape of a vitreous silica crucible, carbon electrodes that generate an arc discharge for fusing a silica powder molded body formed in the mold, and a power supply device that supplies power to the carbon electrodes. The power supply device includes a saturable reactor that is provided on a supply path of the power to the carbon electrodes and has variable reactance, and a control device that controls the power supplied to the carbon electrodes by changing the reactance of the saturable reactor. | 11-01-2012 |
20120318021 | APPARATUS FOR MANUFACTURING VITREOUS SILICA CRUCIBLE - Provided is an apparatus for manufacturing a vitreous silica crucible, which is capable of stably manufacturing a high quality vitreous silica crucible by stabilizing heat generation through an arc discharge. The apparatus for manufacturing a vitreous silica crucible includes a mold that defines a shape of a vitreous silica crucible, carbon electrodes that generate an arc discharge for fusing a silica powder molded body formed in the mold, and a power supply device that supplies power to the carbon electrodes. The power supply device includes a saturable reactor that is provided on a supply path of the power to the carbon electrodes and has variable reactance, and a control device that controls the power supplied to the carbon electrodes by changing the reactance of the saturable reactor. | 12-20-2012 |