Patent application number | Description | Published |
20120080761 | SEMICONDUCTOR HAVING A HIGH ASPECT RATIO VIA - A semiconductor device includes a substrate wafer, a dielectric layer overlying the substrate wafer, a patterned conductor layer in the dielectric layer, and a first barrier layer overlying the conductor layer. A silicon top wafer is bonded to the dielectric layer. A via is formed through the top wafer and a portion of the dielectric layer to the first barrier layer. A sidewall dielectric layer is formed along inner walls of the via, adjacent the top wafer to a distance below an upper surface of the top wafer, forming a sidewall dielectric layer shoulder. A sidewall barrier layer is formed inward of the sidewall dielectric layer, lining the via from the first barrier layer to the upper surface of the top wafer. A conductive layer fills the via and a top barrier layer is formed on the conductive layer, the sidewall barrier layer, and the top wafer. | 04-05-2012 |
20120235300 | SEMICONDUCTOR HAVING A HIGH ASPECT RATIO VIA - The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a via structure includes a via having via sidewall surfaces defined by a semiconductor substrate. The via sidewall surfaces have a first portion and a second portion. A conductive layer is disposed in the via on the first portion of the via sidewall surfaces, and a dielectric layer is disposed on the second portion of the via sidewall surfaces. The dielectric layer is disposed between the second portion of the via sidewall surfaces and the conductive layer. In an example, the dielectric layer is an oxide layer. | 09-20-2012 |
20120238091 | SEMICONDUCTOR HAVING A HIGH ASPECT RATIO VIA - The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a method for forming a via structure includes forming a via in a semiconductor substrate, wherein via sidewalls of the via are defined by the semiconductor substrate; forming a dielectric layer on the via sidewalls; removing the dielectric layer from a portion of the via sidewalls; and forming a conductive layer to fill the via, wherein the conductive layer is disposed over the dielectric layer and the portion of the via sidewalls. In an example, the dielectric layer is an oxide layer. | 09-20-2012 |
20130037891 | MEMS DEVICE AND METHOD OF FORMATION THEREOF - The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate. | 02-14-2013 |
20130208371 | BIOLOGICAL SENSING STRUCTURES AND METHODS OF FORMING THE SAME - A method of forming of biological sensing structures including a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A first light reflecting layer is deposited over the top surface and the sidewall surface of each mesa. A filling material is formed over a first portion of the first light reflecting layer. A stop layer is deposited over the filling material and a second portion of the first light reflecting layer. A sacrificial layer is formed over the stop layer and is planarized exposing the stop layer. A first opening is formed in the stop layer and the first light reflecting layer. A second light reflecting layer is deposited over the first opening. A second opening is formed in the second light reflecting layer. | 08-15-2013 |
20140054779 | Semiconductor Having a High Aspect Ratio Via - The present disclosure provides various embodiments of a via structure and method of manufacturing same. In an example, a via structure includes a via having via sidewall surfaces defined by a semiconductor substrate. The via sidewall surfaces have a first portion and a second portion. A conductive layer is disposed in the via on the first portion of the via sidewall surfaces, and a dielectric layer is disposed on the second portion of the via sidewall surfaces. The dielectric layer is disposed between the second portion of the via sidewall surfaces and the conductive layer. In an example, the dielectric layer is an oxide layer. | 02-27-2014 |
20140248730 | MEMS Device and Method of Formation Thereof - The present disclosure provides a method including providing a first substrate; and forming a microelectromechanical system (MEMS) device on a first surface of the first substrate. A bond pad is formed on at least one bonding site on the first surface of the first substrate. The bonding site is recessed from the first surface. Thus, a top surface of the bond pad may lie below the plane of the top surface of the substrate. A device with recessed connective element(s) (e.g., bond pad) is also described. In further embodiments, a protective layer is formed on the recessed connective element during dicing of a substrate. | 09-04-2014 |
20150044759 | BIOLOGICAL SENSING STRUCTURES - A biological sensing structure includes a mesa integrally connected a portion of a substrate, wherein the mesa has a top surface and a sidewall surface adjacent to the top surface. The biological sensing structure includes a first light reflecting layer over the top surface and the sidewall surface of the mesa. The biological sensing structure includes a filling material surrounding the mesa, wherein the mesa protrudes from the filling material. The biological sensing structure includes a stop layer over the filling material and a portion of the first light reflecting layer. The biological sensing structure includes a second light reflecting layer over a portion of the stop layer and a portion of the top surface of the mesa. The biological sensing structure includes an opening in the second light reflecting layer to partially expose the top surface of the mesa. | 02-12-2015 |