Patent application number | Description | Published |
20090237837 | MAGNETIC RECORDING HEAD - A method of fabricating a recording head includes depositing an insulator material onto at least a portion of a first member, wherein the insulator material forms an insulator film having a film thickness. The method further includes depositing a writer pole material onto the insulator film, wherein the writer pole material forms a writer pole member, and wherein the insulator film is between the writer pole member and a contact layer. Further, in some embodiments, the film thickness determines the distance between the writer pole member and the first contact member and also determines the distance between the writer pole member and the second contact member. | 09-24-2009 |
20100006813 | PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING - A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode. Superionic clusters are present within the at least one aperture, and may extend past the at least one aperture. Also, methods for making a programmable metallization memory cell are disclosed. | 01-14-2010 |
20100102308 | PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER - Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode. | 04-29-2010 |
20100108975 | NON-VOLATILE MEMORY CELL FORMATION - A method and apparatus for forming a non-volatile memory cell, such as a PMC memory cell. In some embodiments, a first electrode is connected to a source while a second electrode is connected to a ground. An ionic region is located between the first and second electrodes and comprises a doping layer, composite layer, and electrolyte layer. The composite layer has a low resistive state and the electrolyte layer switches from a high resistive state to a low resistive state based on the presence of a filament. | 05-06-2010 |
20100108978 | PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL - Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode. The sacrificial metal has a more negative standard electrode potential than the filament forming metal | 05-06-2010 |
20100110764 | PROGRAMMABLE METALLIZATION CELL SWITCH AND MEMORY UNITS CONTAINING THE SAME - An electronic device that includes a first programmable metallization cell (PMC) that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode; and a second PMC that includes an active electrode; an inert electrode; and a solid electrolyte layer disposed between the active electrode and the inert electrode, wherein the first and second PMCs are electrically connected in anti-parallel. | 05-06-2010 |
20100110765 | Non-Volatile Memory Cell with Programmable Unipolar Switching Element - A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element. | 05-06-2010 |
20100117051 | MEMORY CELLS INCLUDING NANOPOROUS LAYERS CONTAINING CONDUCTIVE MATERIAL - A memory cell that includes a first contact having a first surface and an opposing second surface; a second contact having a first surface and an opposing second surface; a memory material layer having a first surface and an opposing second surface; and a nanoporous layer having a first surface and an opposing second surface, the nanoporous layer including at least one nanopore and dielectric material, the at least one nanopore being substantially filled with a conductive metal, wherein a surface of the nanoporous layer is in contact with a surface of the first contact or the second contact and the second surface of the nanoporous layer is in contact with a surface of the memory material layer. | 05-13-2010 |
20100117052 | PROGRAMMABLE METALLIZATION CELLS AND METHODS OF FORMING THE SAME - A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed. | 05-13-2010 |
20100117170 | MAGNETIC MEMORY WITH POROUS NON-CONDUCTIVE CURRENT CONFINEMENT LAYER - A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer. | 05-13-2010 |
20100123117 | NON VOLATILE MEMORY CELLS INCLUDING A FILAMENT GROWTH LAYER AND METHODS OF FORMING THE SAME - A non volatile memory cell that includes a first electrode; a variable resistive layer disposed on the first electrode; a filament growth layer disposed on the variable resistive layer, the filament growth layer including dielectric material and metal atoms; and a second electrode. In other embodiments, a memory array is disclosed that includes a plurality of non volatile memory cells, each non volatile memory cell including a first electrode; a variable resistive layer disposed on the first electrode; a filament growth layer disposed on the variable resistive layer, the filament growth layer including clusters of a first electrically conductive atomic component interspersed in an oxidized second atomic component; and a second electrode; at least one word line; and at least one bit line, wherein the word line is orthogonal to the bit line and each of the plurality of non volatile memory cells are operatively coupled to a word line and a bit line. In still other embodiments, methods are disclosed that include forming a non volatile memory cell include forming a first electrode; forming a variable resistive layer on the first electrode; depositing a two phase alloy layer on the variable resistive layer; converting the two phase alloy layer to a filament growth layer; and depositing a second electrode on the filament growth layer, thereby forming a non volatile memory cell. | 05-20-2010 |
20100140578 | NON VOLATILE MEMORY CELLS INCLUDING A COMPOSITE SOLID ELECTROLYTE LAYER - Programmable metallization cells (PMC) that include a first electrode; a solid electrolyte layer including clusters of high ion conductive material dispersed in a low ion conductive material; and a second electrode, wherein either the first electrode or the second electrode is an active electrode, and wherein the solid electrolyte layer is disposed between the first electrode and the second electrode. Methods of forming them are also included herein. | 06-10-2010 |
20100193758 | PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE - Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact. | 08-05-2010 |
20100193761 | PROGRAMMABLE METALLIZATION MEMORY CELL WITH LAYERED SOLID ELECTROLYTE STRUCTURE - Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed. | 08-05-2010 |
20100197104 | PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING - Methods for making a programmable metallization memory cell are disclosed. | 08-05-2010 |
20100219156 | THREE-DIMENSIONAL MAGNETIC STRUCTURE FOR MICROASSEMBLY - Micro structures and methods for creating complex, 3-dimensional magnetic micro components and their application for batch-level microassembly. Included is a method for making complex, 3-dimensional magnetic structures by depositing a first photoimageable magnet/polymer material on a substrate and patterning to form at least one first active magnetic area and at least one first sacrificial area, then depositing a second photoimageable magnet/polymer material and patterning to form at least one second active magnetic area and at least one second sacrificial area, and then removing the first sacrificial area and the second sacrificial area. Also included is a micro structure self assembly method, the method including providing a substrate having at least one magnetic receptor site, and engaging a 3-dimensional magnetic micro structure having a magnetic micro component with the substrate by aligning the magnetic micro component with the magnetic receptor site. | 09-02-2010 |
20100285633 | NON VOLATILE MEMORY CELLS INCLUDING A FILAMENT GROWTH LAYER AND METHODS OF FORMING THE SAME - A non volatile memory cell that includes a first electrode; a variable resistive layer disposed on the first electrode; a filament growth layer disposed on the variable resistive layer, the filament growth layer including dielectric material and metal atoms; and a second electrode. In other embodiments, a memory array is disclosed that includes a plurality of non volatile memory cells, each non volatile memory cell including a first electrode; a variable resistive layer disposed on the first electrode; a filament growth layer disposed on the variable resistive layer, the filament growth layer including clusters of a first electrically conductive atomic component interspersed in an oxidized second atomic component; and a second electrode; at least one word line; and at least one bit line, wherein the word line is orthogonal to the bit line and each of the plurality of non volatile memory cells are operatively coupled to a word line and a bit line. In still other embodiments, methods are disclosed that include forming a non volatile memory cell include forming a first electrode; forming a variable resistive layer on the first electrode; depositing a two phase alloy layer on the variable resistive layer; converting the two phase alloy layer to a filament growth layer; and depositing a second electrode on the filament growth layer, thereby forming a non volatile memory cell. | 11-11-2010 |
20110002161 | PHASE CHANGE MEMORY CELL WITH SELECTING ELEMENT - A memory cell comprising a phase-change memory cell stacked in series with a resistive switch. The resistive switch has a material switchable between a high resistance state and a low resistance state by the application of a voltage. A plurality of memory cells are used to form a memory array. | 01-06-2011 |
20110007545 | Non-Volatile Memory Cell Stack with Dual Resistive Elements - A non-volatile memory cell and method of use thereof. In some embodiments, an individually programmable resistive sense memory (RSM) element is connected in series with a programmable metallization cell (PMC) switching element. In operation, while the switching element is programmed to a first resistive state, no current passes through the RSM element and while a second resistive state is programmed to the RSM element, current passes through the RSM element. | 01-13-2011 |
20110026321 | MAGNETIC MEMORY WITH POROUS NON-CONDUCTIVE CURRENT CONFINEMENT LAYER - A magnetic element having a ferromagnetic pinned layer, a ferromagnetic free layer, a non-magnetic spacer layer therebetween, and a porous non-electrically conducting current confinement layer between the free layer and the pinned layer. The current confinement layer forms an interface either between the free layer and the non-magnetic spacer layer or the pinned layer and the non-magnetic spacer layer. | 02-03-2011 |
20110037047 | PROGRAMMABLE METALLIZATION CELLS AND METHODS OF FORMING THE SAME - A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed. | 02-17-2011 |
20110109999 | MAGNETIC SHIELD STRUCTURE - An apparatus and associated method for a magnetic shield structure for data transduction from a recordable media in a data storage device. Various embodiments of the present invention are generally directed to a data transducer and a magnetic shield structure comprising a write shield magnetic material constructed of exchange decoupled material. | 05-12-2011 |
20110228599 | Non-Volatile Memory Cell with Programmable Unipolar Switching Element - A non-volatile memory cell with a programmable unipolar switching element, and a method of programming the memory element are disclosed. In some embodiments, the memory cell comprises a programmable bipolar resistive sense memory element connected in series with a programmable unipolar resistive sense switching element. The memory element is programmed to a selected resistance state by application of a selected write current in a selected direction through the cell, wherein a first resistance level is programmed by passage of a write current in a first direction and wherein a second resistance level is programmed by passage of a write current in an opposing second direction. The switching element is programmed to a selected resistance level to facilitate access to the selected resistance state of the memory element. | 09-22-2011 |
20120032131 | PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER - Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode. | 02-09-2012 |
20120040496 | PROGRAMMABLE RESISTIVE MEMORY CELL WITH OXIDE LAYER - Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. An electrically insulating oxide layer separates the ion conductor solid electrolyte material from the electrochemically active electrode. | 02-16-2012 |
20120080317 | ELECTRODEPOSITION OF CoNiP FILMS - A method of forming CoNiP on a substrate that includes the steps of placing a substrate in an electroplating bath, the electroplating bath containing an electroplating composition, the electroplating composition including: a nickel source; a cobalt source; and at least about 0.1 M phosphorus source; and applying a deposition current to the substrate, wherein application of the deposition current to the substrate will cause a CoNiP layer having a thickness of at least about 500 nanometers to be electrodeposited on the substrate. | 04-05-2012 |
20120104348 | PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING - Methods for making a programmable metallization memory cell are disclosed. | 05-03-2012 |
20120104349 | PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL - Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode. The sacrificial metal has a more negative standard electrode potential than the filament forming metal. | 05-03-2012 |
20120138884 | PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE - Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact. | 06-07-2012 |
20120142169 | PROGRAMMABLE METALLIZATION MEMORY CELL WITH PLANARIZED SILVER ELECTRODE - Programmable metallization memory cells having a planarized silver electrode and methods of forming the same are disclosed. The programmable metallization memory cells include a first metal contact and a second metal contact, an ion conductor solid electrolyte material is between the first metal contact and the second metal contact, and either a silver alloy doping electrode separates the ion conductor solid electrolyte material from the first metal contact or the second metal contact, or a silver doping electrode separates the ion conductor solid electrolyte material from the first metal contact. The silver electrode includes a silver layer and a metal seed layer separating the silver layer from the first metal contact. | 06-07-2012 |
20130003225 | MAGNETIC RECORDING HEAD - A method of fabricating a recording head includes depositing an insulator material onto at least a portion of a first member, wherein the insulator material forms an insulator film having a film thickness. The method further includes depositing a writer pole material onto the insulator film, wherein the writer pole material forms a writer pole member, and wherein the insulator film is between the writer pole member and a contact layer. Further, in some embodiments, the film thickness determines the distance between the writer pole member and the first contact member and also determines the distance between the writer pole member and the second contact member. | 01-03-2013 |
20130009126 | PROGRAMMABLE METALLIZATION CELLS AND METHODS OF FORMING THE SAME - A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed. | 01-10-2013 |
20130187115 | PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING - Programmable metallization memory cells include an electrochemically active electrode, an inert electrode and an internal layer between the electrochemically active electrode and the inert electrode. The internal layer having a fast ion conductor material and an apertured layer having a plurality of apertures defined by an electrically insulating material. Each aperture defines at least a portion of a column of fast ion conductor material having superionic clusters. | 07-25-2013 |
20130228734 | PROGRAMMABLE RESISTIVE MEMORY CELL WITH SACRIFICIAL METAL - Programmable metallization memory cells include an electrochemically active electrode and an inert electrode and an ion conductor solid electrolyte material between the electrochemically active electrode and the inert electrode. A sacrificial metal is disposed between the electrochemically active electrode and the inert electrode. The sacrificial metal has a more negative standard electrode potential than the filament forming metal | 09-05-2013 |
20130330901 | PROGRAMMABLE METALLIZATION MEMORY CELL WITH LAYERED SOLID ELECTROLYTE STRUCTURE - Programmable metallization memory cells having an active electrode, an opposing inert electrode and a variable resistive element separating the active electrode from the inert electrode. The variable resistive element includes a plurality of alternating solid electrolyte layers and electrically conductive layers. The electrically conductive layers electrically couple the active electrode to the inert electrode in a programmable metallization memory cell. Methods to form the same are also disclosed. | 12-12-2013 |