Patent application number | Description | Published |
20110121426 | ELECTRONIC DEVICE WITH FUSE STRUCTURE AND METHOD FOR REPAIRING THE SAME - According to an embodiment of the invention, an electronic device with a fuse structure is provided. The electronic device includes a substrate, at least a conducting layer formed in or on the substrate and having a fuse area, and at least a lens disposed overlying the fuse area of the conducting layer, wherein the lens is substantially aligned with the fuse area and there is no optical device disposed between the lens and the fuse area. | 05-26-2011 |
20110311919 | METHOD FOR FABRICATING AN IMAGE SENSOR DEVICE - A method for fabricating an image sensor device is disclosed. The method for fabricating an image sensor device comprises forming a photosensitive layer on a substrate. The photosensitive layer is exposed through a first photomask to form an exposed portion and an unexposed portion. The unexposed portion is partially exposed through a second photomask to form a trimmed part, wherein the second photomask comprise a first segment and a second segment that has a transmittance greater than that of the first segment. The trimmed part is removed to form photosensitive structures. The photosensitive structures are reflowed to form a first microlens and a second microlens having different heights. | 12-22-2011 |
20140264630 | Integrated Structure - An integrated structure comprises a substrate with a first dielectric layer and a second dielectric cap layer disposed thereon in sequence, a metal gate transistor with a high-k gate dielectric layer on the substrate, a gate electrode embedded within the first dielectric layer and a source/drain within the substrate, a first metal contact penetrating the first dielectric layer and being in direct contact with the source/drain and a through-silicon via penetrating the second dielectric cap layer, the first dielectric layer and the substrate. | 09-18-2014 |
20140264869 | Semiconductor Device - A semiconductor device comprises a substrate having a first side with a first surface and a second side with a second surface, a recessed through silicon via (TSV) penetrating the substrate and forming a first step height with respect to the first surface of the first side, a first extruded backside redistribution line (RDL) filling in the first step height and engaging with the recessed through silicon via. | 09-18-2014 |
20140264912 | Semiconductor Device - A semiconductor device comprises a substrate, a through-silicon via (TSV) penetrating the substrate, a plurality of first interconnect structures, right above the TSV, configured for electrically coupling the TSV to a higher-level interconnect, a second interconnect structure traversing the TSV from the top and being configured for interconnect routing of an active device and a plurality of dummy metal patterns, right above the TSV, electrically isolated from the TSV, the first interconnect structures and the second interconnect structure. | 09-18-2014 |
20140264913 | Semiconductor Device - A semiconductor device comprises a substrate, a through-silicon via (TSV) penetrating the substrate, at least one first interconnect structure traversing the TSV from the top and dividing a region right above the TSV into several sub-regions and being configured for interconnect routing of an active device and a plurality of second interconnect structures occupying the sub-regions right above the TSV and being configured for electrically coupling the TSV to a higher-level interconnect. | 09-18-2014 |
20140264915 | Stacked Integrated Circuit System - A stacked integrated circuit system comprises a first chip with first average pattern density comprising memory cells, a second chip with second average pattern density comprising logic circuitries for the memory cells and a functioning unit and a plurality of through-silicon vias within one of the first chip and second chip to electrically connect the first chip and the second chip, wherein the memory cells of the first chip and the logic circuitries of the second chip are designed to be used collectively in order to perform complete memory functions, and wherein the first average pattern density is higher than the second average pattern density. | 09-18-2014 |
20140264917 | A Semiconductor Device with a Through-Silicon Via and a Method for Making the Same - A semiconductor device with a through-silicon via comprises a substrate with a front side and a backside and a through-silicon via penetrating the substrate with a circular shape on the front side and a corner-rounded rectangular shape on the back side. | 09-18-2014 |
20140264918 | Integrated Circuit Layout - An integrated circuit layout comprises a through silicon via (TSV) configured to couple positive operational voltage VDD (VDD TSV), a through silicon via (TSV) configured to couple operational signals (signal TSV), a plurality of through silicon vias (TSVs) configured to couple operational voltage VSS (VSS TSVs) around the VDD TSV and the signal TSV and one or more backside redistribution lines (RDLs) connecting the VSS TSVs together to form a web-like heat dissipating structure at least surrounding the VDD TSV and the signal TSV. | 09-18-2014 |
20140266418 | Stacked Chip System - A stacked chip system is provided to comprise a first chip, a second chip, a first group of through silicon vias (TSVs) connecting the first chip and second chip and comprising at least one first VSS TSV, at least one first VDD TSV, a plurality of first signal TSVs and at least one first redundant TSV and a second group of through silicon vias (TSVs) connecting the first chip and second chip and comprising at least one second VSS TSV, at least one second VDD TSV, a plurality of second signal TSVs and at least one second redundant TSV, wherein all the first group of TSVs are coupled by a first selection circuitry configured to select the at least one first redundant TSV and bypass at least one of the rest of the first group of TSVs, and wherein the at least one first redundant TSV and the at least second redundant TSV are coupled by a second selection circuitry configured to allow one of them to replace the other. | 09-18-2014 |
20140273435 | METHOD FOR FABRICATING A THROUGH-SILICON VIA - A method for fabricating a through-silicon via comprises the following steps. Provide a substrate. Form a through silicon hole in the substrate having a diameter of at least 1 μm and a depth of at least 5 μm. Perform a first chemical vapor deposition process with a first etching/deposition ratio to form a dielectric layer lining the bottom and sidewall of the through silicon hole and the top surface of the substrate. Perform a shape redressing treatment with a second etching/deposition ratio to change the profile of the dielectric layer. Repeat the first chemical vapor deposition process and the shape redressing treatment at least once until the thickness of the dielectric layer reaches to a predetermined value. | 09-18-2014 |