Patent application number | Description | Published |
20120015459 | Thermal Leveling for Semiconductor Devices - A semiconductor device and a method of manufacturing are provided. In some embodiments, a backside annealing process such that a first heat source is placed along a backside of the substrate. In other embodiments, the first heat source is used in combination with an anti-reflection dielectric (ARD) layer is deposited over the substrate. In yet other embodiments, a second heat source is placed along a front side of the substrate in addition to the first heat source placed on the backside of the substrate. In yet other embodiments, a heat shield may be placed between the substrate and the second heat source on the front side of the substrate. In yet further embodiments, a single heat source may be used on the front side of the substrate in combination with the ARD layer. A reflectivity scan may be performed to determine which anneal stage (RTA or MSA or both) to place thermal leveling solution. | 01-19-2012 |
20130089958 | Finlike Structures and Methods of Making Same - Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer. | 04-11-2013 |
20140024187 | FINLIKE STRUCTURES AND METHODS OF MAKING SAME - Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer. | 01-23-2014 |
20140302653 | Finlike Structures and Methods of Making Same - Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer. | 10-09-2014 |
20150024566 | Finlike Structures and Methods of Making Same - Semiconductor materials, particularly III-V materials used to form, e.g., a finlike structure can suffer structural damage during chemical mechanical polishing steps. This damage can be reduced or eliminated by oxidizing the damaged surface of the material and then etching away the oxidized material. The etching step can be accomplished simultaneously with a step of etching back a patterned oxide layers, such as a shallow trench isolation layer. | 01-22-2015 |
20150024588 | Hard Mask Removal Scheme - A method includes forming a barrier layer in a via hole and over a hard mask layer. The hard mask layer is disposed over a dielectric layer. The via hole is located through the dielectric layer and the hard mask layer. A filler layer is formed in the via hole and over the barrier layer. The filler layer and the hard mask layer are removed. A metal layer is formed in the via hole. | 01-22-2015 |
20150107634 | Apparatus and Methods for Movable Megasonic Wafer Probe - A movable wafer probe may include: an immersion hood including a top body portion and a bottom foot portion, the top body portion having first inner sidewalls surrounding a top opening, the bottom foot portion having second inner sidewalls surrounding a bottom opening; a transducer disposed above the bottom opening and within the top opening, the transducer spaced apart from the first inner sidewalls of the top body portion by a first spacing, the first spacing forming a fluid exhaust port; and a fluid input port extending through the transducer, a bottom end of the fluid input port opening to the bottom opening | 04-23-2015 |
20150348834 | Hard Mask Removal Scheme - A method includes forming a barrier layer in a via hole and over a hard mask layer. The hard mask layer is disposed over a dielectric layer. The via hole is located through the dielectric layer and the hard mask layer. A filler layer is formed in the via hole and over the barrier layer. The filler layer and the hard mask layer are removed. A metal layer is formed in the via hole. | 12-03-2015 |