Patent application number | Description | Published |
20080197413 | THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer. | 08-21-2008 |
20080291351 | Flat Panel Display - Disclosed is a flat panel display that can prevent image quality degradation by preventing the current transmitted to the organic light emitting diode or liquid crystal of the flat panel display from being changed by the leakage current and keeping the current stably. The flat panel display comprises: a first switching element whose control electrode is electrically coupled to a scan line, being electrically coupled between a data line and a first voltage line; a second switching element whose control electrode is electrically coupled to the scan line, being electrically coupled between the first switching element and first voltage line; a capacitive element whose first electrode is electrically coupled between the first and second switching elements; a drive transistor whose control electrode is electrically coupled to the second switching element, being electrically coupled between the first voltage line and a second voltage line; and an organic light emitting diode electrically coupled between the drive transistor and second voltage line. | 11-27-2008 |
20090027312 | ORGANIC LIGHT EMITTING DISPLAY - An organic light emitting display that can minimize degradation of a drive transistor comprising a first switching element whose control electrode is electrically coupled to a scan line, being electrically coupled between a data line and a first voltage line for transmitting a data signal; a drive transistor whose control electrode is electrically coupled to the first switching element, being electrically coupled between the first and second voltage lines; an organic light emitting diode electrically coupled to the drive transistor, displaying an image by a current supplied through the drive transistor; a first capacitive element electrically coupled between the control electrode of the drive transistor and the first switching element; a second capacitive element electrically coupled between the first capacitive element and the second voltage line; a second switching element electrically coupled between the first voltage line and the control electrode of the drive transistor; a third switching element electrically coupled between the first switching element and the drive transistor; a fourth switching element electrically coupled between the control electrode of the drive transistor and the second voltage line; and a fifth switching element electrically coupled between the drive transistor and the second voltage line. | 01-29-2009 |
20090153459 | Picture element structure of current programming method type active matrix organic emitting diode display and driving method of data line - The present invention provides a novel structure of picture elements in current programming-type semiconductor devices, and in particular, the structure of picture elements of an active matrix organic light emitting diode (OLED) display. The device makes a self-compensation for OLED current deviations due to the deterioration in threshold voltage and uneven electric characteristic in thin film transistors. The invention also provides a method for driving a data driver capable of compensating for the uneven electric characteristic of thin film transistors in the driver for driving picture elements in the current programming-type active matrix OLED display device. | 06-18-2009 |
20090166510 | Illumination Sensing Apparatus, Driving Method Thereof and Display Device Having the Illumination Sensing Apparatus - Provided are an illumination sensing apparatus, a driving method thereof and a display device having the illumination sensing apparatus. The illumination sensing apparatus includes an illumination sensor unit configured to generate a sensing signal according to peripheral illumination, an illumination determination unit configured to generate an illumination signal according to the sensing signal, and an illumination judgment unit configured to output a brightness select signal using the illumination signal, wherein the illumination sensor unit controls sensitivity of sensing the peripheral illumination to be varied according to the brightness select signal. Therefore, the sensitivity of an illumination sensor is automatically controlled according to the peripheral illumination, thus improving peripheral illumination sensibility. Further, an illumination signal corresponding to the peripheral illumination is provided to a light source module to thereby control the output brightness of the light source module, which makes it possible to reduce power consumption and improve image quality. | 07-02-2009 |
20090289915 | DISPLAY DEVICE WITH OPTICAL SENSORS - A display device with a touch screen includes: first sensing units, each first sensing unit comprising first optical sensors connected in series, each first sensing unit comprising a first terminal for receiving a first voltage, each first sensing unit extending in a first direction; second sensing units, each second sensing unit comprising second optical sensors connected in series, each second sensing unit comprising a first terminal for receiving a second voltage, each second sensing unit extending in a second direction transverse to the first direction; a reset unit for applying a reset voltage to a second terminal of each of the first and second sensing units; and a read-out unit for sensing a touch position based on voltage changes at the second terminals of the first and second sensing units. | 11-26-2009 |
20090298268 | Method of fabricating poly-crystalline silicon thin film and method of fabricating transistor using the same - A method of fabricating a poly-Si thin film and a method of fabricating a poly-Si TFT using the same are provided. The poly-Si thin film is formed at a low temperature using ICP-CVD. After the ICP-CVD, ELA is performed while increasing energy by predetermined steps. A poly-Si active layer and a Si0 | 12-03-2009 |
20090303220 | Display Device and Driving Method Thereof - A display device includes a light emitting diode, and first and second driving transistors connected between a driving voltage and the light emitting diode to supply driving electric current to the light emitting diode. A control voltage or control voltages differentiated in polarity from each other is/are applied to control terminals of the first and the second driving transistors. The first driving transistor has a control electrode located below a semiconductor layer of the light emitting diode while the second driving transistor has a control electrode located over the semiconductor layer. Two driving transistors are formed at each pixel, and an area occupied thereof within the pixel is reduced. Control voltages differentiated in polarity from each other are applied to the respective driving transistors, substantially preventing deterioration of the driving transistors. | 12-10-2009 |
20100013788 | TOUCH SENSOR AND LIQUID CRYSTAL DISPLAY HAVING THE SAME - A touch sensor configured to be disposed in a liquid crystal display panel includes a plurality of x-axis read-out lines crossing and insulated from a plurality of y-axis read-out lines and a plurality of sensor units. Each sensor unit includes a reset unit, a capacitance detector, a first output unit, and a second output unit. The reset unit outputs a first reset signal based on a first control signal. The capacitance detector changes the first reset signal based on a variation of a cell gap of the liquid crystal display panel caused by a touch event. The first output unit changes an electric potential of a corresponding x-axis read-out line in response to the first reset signal changed in the capacitance detector. The second output unit changes an electric potential of a corresponding y-axis read-out line in response to the first reset signal changed in the capacitance detector. | 01-21-2010 |
20110057902 | TOUCH SENSOR AND LIQUID CRYSTAL DISPLAY HAVING THE SAME - A liquid crystal display panel includes a touch sensor and the touch sensor includes a plurality of x-axis read-out lines, a plurality of y-axis read-out lines crossing the x-axis read-out lines, a plurality of sensor units provided in a plurality of regions defined by the x-axis read-out lines and the y-axis read-out lines. Each sensor unit comprises a reset unit that outputs a sampling voltage based on a reset voltage, a capacitance detector that generates a modified sampling voltage from the sampling voltage based on a variation of a cell gap of the display panel caused by a touch of the display panel, a first output unit that changes an electric potential of a corresponding x-axis read-out line in response to the modified sampling voltage and a second output unit that changes an electric potential of a corresponding y-axis read-out line in response to the modified sampling voltage. | 03-10-2011 |
20110198592 | THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THIN FILM TRANSISTOR - Disclosed are a thin film transistor having high reliability and providing a simplified fabricating process, and a method of fabricating the thin film transistor. In the method, a dielectric substrate is prepared, a semiconductor layer is formed on the dielectric substrate, a gate dielectric film is formed on the semiconductor layer, a first gate electrode is formed on the gate dielectric film, a second gate electrode contacting a side wall of the first gate electrode is formed, and impurities are implanted into the semiconductor layer using the first gate electrode as a mask. | 08-18-2011 |
20120018721 | THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THIN FILM TRANSISTOR - A thin film transistor, which has a first passivation layer and a second passivation layer to maintain high reliability while preventing hydrogen from being induced to a semiconductor layer, and a method for fabricating the thin film transistor are provided. The method includes providing a substrate including an insulation substrate, forming a gate electrode on the substrate, forming a gate insulation layer on the substrate and the gate electrode, forming a semiconductor layer on the gate insulation layer, forming source/drain electrodes on the semiconductor layer to expose a portion of a top portion of the semiconductor layer, forming a first passivation layer to cover exposed top portions of the gate insulation layer, the semiconductor layer and the source/drain electrodes, and forming a second passivation layer on the first passivation layer, wherein the forming of the second passivation layer comprises performing deposition at a higher temperature than the forming of the first passivation layer. | 01-26-2012 |
20120187407 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material. The thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulation film on the substrate to cover the gate electrode, a semiconductor layer disposed on the gate insulation film in a region corresponding to the gate electrode, an electrode layer having a double layer structure and disposed on the gate insulation film in a manner such that a topside portion of the semiconductor layer is exposed through the electrode layer, and a passivation layer on the gate insulation film to cover the semiconductor layer and the electrode layer. | 07-26-2012 |
20130075731 | MANUFACTURING METHOD FOR THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR MANUFACTURED BY THEM - Provided are a manufacturing method for a thin film transistor, and a thin film transistor manufactured by the manufacturing method. In the manufacturing method, a semiconductor layer and an insulating layer for stopping etching, which are sequentially stacked, are etched by dry etching and wet etching using a single photoresist pattern, and patterning the semiconductor layer and the insulating layer into a channel layer and an etch stop layer, respectively, thereby simplifying the manufacturing process of the thin film transistor. | 03-28-2013 |
20130089972 | METHOD FOR FORMING NANOCRYSTALLINE SILICON FILM - Provided is a method for forming a nanocrystalline silicon film that can be deposited on a substrate while maintaining a high degree of crystallinity at low temperatures. The method includes performing plasma treatment on a substrate, and forming a nanocrystalline silicon film by depositing the nanocrystalline silicon film on the substrate. | 04-11-2013 |
20130105799 | THIN FILM TRANSISTOR AND FLEXIBLE DISPLAY USING THE SAME | 05-02-2013 |
20130115740 | MANUFACTURING METHOD OF THIN FILM TRANSITOR - Disclosed are a thin film transistor and a method of manufacturing the thin film transistor. An electrode layer of the thin film transistor includes a seed layer formed of a transparent conductive material doped with indium gallium zinc oxide (IGZO) and a main layer formed of a transparent conductive material. The thin film transistor includes a substrate, a gate electrode on the substrate, a gate insulation film on the substrate to cover the gate electrode, a semiconductor layer disposed on the gate insulation film in a region corresponding to the gate electrode, an electrode layer having a double layer structure and disposed on the gate insulation film in a manner such that a topside portion of the semiconductor layer is exposed through the electrode layer, and a passivation layer on the gate insulation film to cover the semiconductor layer and the electrode layer. | 05-09-2013 |
20140138700 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a nitride-based semiconductor device includes: preparing a substrate; forming a buffer layer on the substrate, the buffer layer preventing dislocation with the substrate; forming a spacer on the buffer layer; forming a barrier layer on the spacer, the barrier layer forming a hetero-structure with the spacer; forming a protecting layer on the barrier layer; and forming an HfO | 05-22-2014 |