Patent application number | Description | Published |
20080210973 | ZINC-OXIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - The invention discloses a zinc-oxide-based semiconductor light-emitting device and the fabrication thereof The method according to the invention, first, is to prepare a substrate. Next, by an atomic-layer-deposition-based process, a ZnO-based multi-layer structure is formed on or over the substrate where the ZnO-based multi-layer structure includes a light-emitting region. | 09-04-2008 |
20080241421 | OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - The invention provides an optoelectronic device and the fabrication thereof. The method according to the invention, firstly, prepares a substrate. Then, the method forms a multi-layer structure on the substrate. Afterward, by an atomic layer deposition based process, the method forms a passivation layer overlaying the multi-layer structure. | 10-02-2008 |
20080254231 | METHOD OF FORMING PROTECTION LAYER ON CONTOUR OF WORKPIECE - The invention provides a method of forming a protection layer on a contour of a workpiece. The workpiece is made of at least one metal and/or at least one alloy. The method according to the invention forms an inorganic layer on the contour of the workpiece by an atomic layer deposition process and/or a plasma-enhanced atomic layer deposition process (or a plasma-assisted atomic layer deposition process), and the inorganic layer serves as the protection layer. | 10-16-2008 |
20090050914 | SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH SELECTIVELY FORMED BUFFER LAYER ON SUBSTRATE - The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a multi-layer structure, and an ohmic electrode structure. The buffer layer is selectively formed on an upper surface of the substrate such that the upper surface of the substrate is partially exposed. The multi-layer structure is formed to overlay the buffer layer and the exposed upper surface of the substrate. The multi-layer structure includes a light-emitting region. The buffer layer assists a bottom-most layer of the multi-layer structure in lateral and vertical epitaxial growth. The ohmic electrode structure is formed on the multi-layer structure. | 02-26-2009 |
20090050929 | SEMICONDUCTOR SUBSTRATE WITH NITRIDE-BASED BUFFER LAYER FOR EPITAXY OF SEMICONDUCTOR OPTO-ELECTRONIC DEVICE AND FABRICATION THEREOF - The invention discloses a semiconductor substrate for epitaxy of a semiconductor optoelectronic device and the fabrication thereof. The semiconductor substrate according to the invention includes a substrate, and a nitride-based buffer layer. The buffer layer is formed by an atomic layer deposition process and/or a plasma-enhanced (or a plasma-assisted) atomic layer deposition process on an upper surface of the substrate. The nitride-based buffer layer assists the epitaxial growth of a semiconductor material layer of the semiconductor optoelectronic device. | 02-26-2009 |
20090068780 | METHOD OF FABRICATING SEMICONDUCTOR OPTOELECTRONIC DEVICE AND RECYCLING SUBSTRATE DURING FABRICATION THEREOF - The invention discloses a method of fabricating a semiconductor optoelectronic device. First, a substrate is prepared. Subsequently, a buffer layer is deposited on the substrate. Then, a multi-layer structure is deposited on the buffer layer, wherein the multi-layer structure includes an active region. The buffer layer assists the epitaxial growth of the bottom-most layer of the multi-layer structure, and the buffer layer also serves as a lift-off layer. Finally, with an etching solution, only the lift-off layer is etched to debond the substrate away from the multi-layer structure, wherein the multi-layer structure serves as the semiconductor optoelectronic device. | 03-12-2009 |
20090090931 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a corrosion-resistant film, a multi-layer structure, and an ohmic electrode structure. The buffer layer is grown on an upper surface of the substrate. The corrosion-resistant film is deposited to overlay the buffer layer The multi-layer structure is grown on the corrosion-resistant film and includes a light-emitting region. The buffer layer assists the epitaxial growth of a bottom-most layer of the multi-layer structure. The corrosion-resistant film prevents the buffer layer from being corroded by a gas during the epitaxial growth of the bottom-most layer. The ohmic electrode structure is deposited on the multi-layer structure. | 04-09-2009 |
20090104455 | TRANSPARENT CONDUCTIVE COMPONENT UTILIZED IN TOUCH PANEL - The invention discloses a transparent conductive component utilized in a touch panel. The transparent conductive component according to the invention includes a transparent substrate and a ZnO film. The transparent substrate has an upper surface. The ZnO film is formed by an atomic layer deposition process and/or a plasma-enhanced (or a plasma-assisted) atomic layer deposition process on the upper surface of the transparent substrate. | 04-23-2009 |
20090283139 | SEMICONDUCTOR STRUCTURE COMBINATION FOR THIN-FILM SOLAR CELL AND MANUFACTURE THEREOF - The invention discloses a semiconductor structure combination for a thin-film solar cell and a manufacture thereof. The semiconductor structure combination according to the invention includes a substrate, a multi-layer structure, and a passivation layer. The substrate has an upper surface. The multi-layer structure is deposited on the upper surface of the substrate and includes a p-n junction, a p-i-n junction, an n-i-p junction, a tandem junction or a multi-junction. The passivation layer is deposited by an atomic layer deposition process and/or a plasma-enhanced (or a plasma-assisted) atomic layer deposition process on a top-most layer of the multi-layer structure. | 11-19-2009 |
20110003420 | Fabrication method of gallium nitride-based compound semiconductor - The present invention discloses a method for fabricating gallium nitride(GaN)-based compound semiconductors. Particularly, this invention relates to a method of forming a transition layer on a zinc oxide (ZnO)-based semiconductor layer by the steps of forming a wetting layer and making the wetting layer nitridation. The method not only provides a function of protecting the ZnO-based semiconductor layer, but also uses the transition layer as a buffer layer for a following epitaxial growth of a GaN-based semiconductor layer, and thus, the invention may improve the crystal quality of the GaN-based semiconductor layer effectively. | 01-06-2011 |
20110241042 | NANOCRYSTAL-BASED OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - The invention discloses a nanocrystal-based optoelectronic device and method of fabricating the same, such as light-emitting diode, photodetector, solar cell, etc. The optoelectronic device according to the invention includes a substrate of a first conductive type, N active layers formed on the substrate and a transparent conductive layer formed on the most-top active layer. Each active layer is constituted by a plurality of nanocrystals. Each nanocrystal is wrapped by a passivation layer. | 10-06-2011 |
20120199935 | OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME - The invention discloses an optoelectronic device and method of fabricating the same. The optoelectronic device according to the invention includes a semiconductor structure combination, a first surface passivation layer formed on an upper surface of the semiconductor structure combination, and a second surface passivation layer formed on the first surface passivation layer. The semiconductor structure combination includes at least one P-N junction. In particular, the interfacial state density of the first surface passivation layer is lower than that of the second surface passivation layer, and the fixed oxide charge density of the second surface passivation layer is higher than that of the first surface passivation layer. | 08-09-2012 |
20130181240 | COMPOSITE SUBSTRATE, MANUFACTURING METHOD THEREOF AND LIGHT EMITTING DEVICE HAVING THE SAME - The present invention relates to a manufacturing method of a composite substrate. The method includes the steps of: providing a substrate; providing a precursor of group III elements and a precursor of nitrogen (N) element alternately in an atomic layer deposition (ALD) process or a plasma-enhanced atomic layer deposition (PEALD) process so as to deposit a nitride buffer layer on the substrate; and annealing the nitride buffer layer on the substrate at a temperature in the range of 300° C. to 1600° C. | 07-18-2013 |
20130186460 | SOLAR CELL AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a solar cell includes following steps. A first-conductive-type silicon wafer is provided. The silicon wafer has a first (front) surface and a second (back) surface facing each other, and a plurality of nanorods are located on the first surface. A doping process is performed, so that the conductive type of the nanorods and the conductive type of one portion of the silicon wafer located below the nanorods are changed to a second conductive type. A first electrode is formed on the second surface, and a first annealing process is performed on the first electrode. A second electrode is formed on a partial region of the first surface. An atomic layer deposition process is performed to form a passivation layer on the first surface and surfaces of the nanorods. | 07-25-2013 |
20130291936 | SOLAR CELL - A solar cell is provided. The solar cell includes a substrate, a first electrode, a second electrode, a seed layer, and a plurality of nanorods. The substrate has a first surface and a second surface opposite to each other. A conductive type of a portion of the substrate adjacent to the first surface is first conductive type, and a conductive type of the remaining portion of the substrate is second conductive type. The first electrode is disposed on the first surface. The second electrode is disposed on the second surface. The seed layer is disposed on the first surface. The nanorods are disposed on the seed layer. | 11-07-2013 |