Patent application number | Description | Published |
20110074290 | SELF-BALLASTED LAMP AND LIGHTING EQUIPMENT - A self-ballasted lamp includes: a base body; a light-emitting module and a globe which are provided at one end side of the base body; a cap provided at the other end side of the base body; and a lighting circuit housed between the base body and the cap. The light-emitting module has light-emitting portions each using a semiconductor light-emitting element, and a support portion projected at one end side of the base body, and the light-emitting portions are disposed at least on a circumferential surface of the support portion. A light-transmissive member is interposed between the light-emitting module and an inner face of the globe. | 03-31-2011 |
20120300430 | LIGHT-EMITTING MODULE AND LIGHTING APPARATUS - According to one embodiment, a light-emitting module includes a light-transmissive substrate, an LED chip arranged on one surface of the light-transmissive substrate, and a phosphor layer surrounding the LED chip. The phosphor layer includes a first phosphor layer covering one surface of the LED chip and a second phosphor layer covering the other surface side of the light-transmissive substrate and being continuous with the first phosphor layer. | 11-29-2012 |
20130249389 | Luminaire - A luminaire includes a semiconductor light source having a light emission peak in a range of wavelength smaller than 480 nm and a phosphor excited by light radiated from the semiconductor light source to radiate light having wavelength equal to or larger than 480 nm. A spectrum of radiated light obtained by combining the light radiated from the semiconductor light source and the light radiated from the phosphor has a light emission peak in a range of wavelength equal to or larger than 610 nm and smaller than 650 nm. A ratio of radiation energy in a range of wavelength equal to or larger than 650 nm and equal to or smaller than 780 nm to radiation energy in a range of wavelength equal to or larger than 600 nm and smaller than 650 nm is equal to or lower than 35%. A color gamut area ratio exceeds 100%. | 09-26-2013 |
20130250562 | WIRING BOARD DEVICE, LUMINAIRE, AND MANUFACTURING METHOD OF THE WIRING BOARD DEVICE - According to one embodiment, a wiring board device is provided in which even if the temperature of a ceramic board becomes high, the influence on a connector can be reduced and the occurrence of defects due to heat can be prevented. The wiring board device includes a common member. The ceramic board and the connector are placed on the common member. A wiring pattern of the ceramic board and the connector are electrically connected by wiring. | 09-26-2013 |
20130250576 | WIRING BOARD DEVICE, LUMINAIRE AND MANUFACTURING METHOD OF THE WIRING BOARD DEVICE - According to one embodiment, a wiring board device includes a ceramic board including a first surface and a second surface. A first electrode layer is formed on the first surface of the ceramic board, and a second electrode layer is formed on the second surface of the ceramic board. The first electrode layer and the second electrode layer are not electrically connected to each other. A first copper plated layer as a wiring pattern is formed on the first electrode layer, and a second copper plated layer is formed on the second electrode layer. The first copper plated layer and the second copper plated layer are not electrically connected to each other. A heat spreader is thermally connected to the second copper plated layer. | 09-26-2013 |
20140145590 | SELF-BALLASTED LAMP AND LIGHTING EQUIPMENT - A self-ballasted lamp includes: a base body; a light-emitting module and a globe which are provided at one end side of the base body; a cap provided at the other end side of the base body; and a lighting circuit housed between the base body and the cap. The light-emitting module has light-emitting portions each using a semiconductor light-emitting element, and a support portion projected at one end side of the base body, and the light-emitting portions are disposed at least on a circumferential surface of the support portion. A light-transmissive member is interposed between the light-emitting module and an inner face of the globe. | 05-29-2014 |
20140153238 | Light Emitting Device and Luminaire - According to one embodiment, there is provided a light-emitting device including a light-emitting section, a thermal radiation member, and a heat conduction layer. The light-emitting section includes a mounting substrate section and a light-emitting element section. The mounting substrate section includes a substrate, a first metal layer, and a second metal layer. The substrate includes a first principal plane including a mounting region and a second principal plane. The first metal layer includes mounting patterns provided in the mounting region. The light-emitting element section includes semiconductor light-emitting elements and a wavelength conversion layer. The semiconductor light-emitting elements are connected to the mounting patterns. The luminous exitance of the light-emitting element section is equal to or higher than 101 m/mm | 06-05-2014 |
20140231847 | Light Emitting Module and Lighting Device - A light emitting module according to one embodiment includes a substrate; a light emitting body disposed on the substrate; a first phosphor which is excited by emitted light of the light emitting body; and a second phosphor which is arranged between the first phosphor and the light emitting body. The first phosphor has a light emitting peak whose half-value width is 20 nm or less in a wavelength range from 610 nm to less than 650 nm. The second phosphor is excited by the emitted light of the light emitting body, and has the light emitting peak in the wavelength range between a peak wavelength of a light emitting spectrum of the light emitting body and the peak wavelength of the light emitting spectrum of the first phosphor. | 08-21-2014 |
20140232257 | Light Emitting Module and Lighting Device - A light emitting module according to one embodiment includes a substrate; a light emitting body disposed on the substrate; and a phosphor layer having a first phosphor and a second phosphor which are excited by emitted light of the light emitting body. The first phosphor has a light emitting peak whose half-value width is 20 nm or less in a wavelength range from 610 nm to less than 650 nm, and the second phosphor has the light emitting peak in the wavelength range between a peak wavelength of a light emitting spectrum of the light emitting body and the peak wavelength of the light emitting spectrum of the first phosphor. Then, a distribution of the first phosphor in the phosphor layer has density gradient, where the density of the first phosphor increases toward at least one end of the phosphor layer in a direction perpendicular to the substrate. | 08-21-2014 |
20140354146 | Luminaire - A luminaire includes a semiconductor light source having a light emission peak in a range of wavelength smaller than 480 nm and a phosphor excited by light radiated from the semiconductor light source to radiate light having wavelength equal to or larger than 480 nm. A spectrum of radiated light obtained by combining the light radiated from the semiconductor light source and the light radiated from the phosphor has a light emission peak in a range of wavelength equal to or larger than 610 nm and smaller than 650 nm. A ratio of radiation energy in a range of wavelength equal to or larger than 650 nm and equal to or smaller than 780 nm to radiation energy in a range of wavelength equal to or larger than 600 nm and smaller than 650 nm is equal to or lower than 35%. A color gamut area ratio exceeds 100%. | 12-04-2014 |
20150084075 | Light-Emitting Module and Luminaire - According to one embodiment, there is provided a light-emitting module including a substrate, a light-emitting body provided on the substrate, and a phosphor containing layer provided on the substrate and the light-emitting body, the phosphor containing layer including a first phosphor excited by emitted light of the light-emitting body, having a light emission peak in a wavelength range equal to or greater than 610 nm and less than 655 nm, and having a surface covered with a protection film. | 03-26-2015 |
Patent application number | Description | Published |
20100092885 | IMAGE FORMING MATERIAL - An image forming material includes a perimidine-substituted squarylium dye that has a structure represented by the following formula (I) and shows diffraction peaks at least at Bragg angles (2θ±0.2°) of 17.7°, 19.9°, 22.1°, 23.2° and 24.9° in its X-ray powder diffraction spectrum measured by irradiation with X rays generated from a Cu target with a wavelength of 1.5405 angstroms: | 04-15-2010 |
20100202790 | FIXING DEVICE, IMAGE-FORMING DEVICE, AND FIXING METHOD - A fixing device includes: a fixing unit that irradiates light to a color material transferred to a medium at a position specified by image data, to fix the color material on the medium; and a control unit that controls irradiation of light of the fixing unit so that an energy of light irradiated to an image-forming area on the medium including an area in which the color material has been transferred at the position specified by the image data is lower than an energy of light irradiated to a non image-forming area on the medium other than the image-forming area. | 08-12-2010 |
20110044741 | LASER FIXING APPARATUS AND IMAGE FORMING APPARATUS - A laser fixing apparatus includes a laser light generator that generates laser light to be projected onto a recording medium; and a first condenser that reflects and condenses light reflected at an irradiation position of the laser light, such that the reflected light reenters at the irradiation position or near the irradiation position. The first condenser has a concave cylindrical surface and is arranged such that a center axis position of the cylindrical surface is located at the irradiation position of the laser light or near the irradiation position, and a reflecting surface of the first condenser is covered by a light transmitting body. | 02-24-2011 |
20110058867 | FIXING DEVICE, IMAGE FORMING APPARATUS, AND TONER IMAGE FIXING METHOD - According to an aspect of the invention, a fixing device includes a laser beam irradiation unit and a conveying unit. The laser beam irradiation unit includes a plurality of laser beam sources and emits a plurality of laser beams to a surface of a recording medium. The conveying unit conveys the recording medium and/or the laser beam irradiation unit so that irradiated regions irradiated with the laser beams are moved in a given direction. When the plurality of laser beams is emitted to a toner image to fix the toner image, the plurality of laser beams satisfies conditions (A) and (B). The condition (A) is that the plurality of laser beams has substantially the same beam power and substantially the same width. The condition (B) is that the plurality of laser beams is independently emitted to the toner image. | 03-10-2011 |
20110064448 | LASER FIXING DEVICE AND IMAGE FORMING APPARATUS - According to an aspect of the invention, a laser fixing device includes a laser beam generating device and an airflow generating unit. The laser beam generating device generates laser beams and irradiates a recording medium transported with the laser beams. The airflow generating unit generates airflow flowing between the laser beam generating device and the recording medium. A flow speed of the airflow in a transport direction of the recording medium in an irradiation position of the laser beams is higher than a transport speed of the recording medium. | 03-17-2011 |
Patent application number | Description | Published |
20090166592 | Liquid mixture, structure, and method of forming structure - The present invention provides a structure composed substantially only of carbon nanotubes each having a functional group, the structure being obtained by using a liquid mix characterized by including: the carbon nanotubes; and a crosslinking agent capable of prompting a crosslinking reaction with the functional group. The structure has a network structure in which the carbon nanotubes are surely connected to each other. The present invention also provides a method of forming the structure. | 07-02-2009 |
20090197002 | Carbon nanotube composite structure and method of manufacturing the same - Provided are a carbon nanotube structure more excellent in electric conductivity, thermal conductivity, and mechanical strength, and a method of manufacturing the carbon nanotube structure. A carbon nanotube composite structure is characterized by including: a first carbon nanotube structure in which functional groups bonded to plural carbon nanotubes are chemically bonded and mutually cross-linked to construct a network structure; and a second carbon nanotube structure in which functional groups bonded to plural carbon nanotubes are chemically bonded and mutually cross-linked to construct a network structure, the second carbon nanotube structure being combined with the network structure of the first carbon nanotube structure. | 08-06-2009 |
20100137502 | Composite and method of manufacturing the same - Provided is a nanotube-polymer composite which can effectively utilize characteristics of a carbon nanotube structure. The composite includes a carbon nanotube structure and a polymer, in which: the carbon nanotube structure has a network structure constructed by mutually cross-linking functional groups bonded to multiple carbon nanotubes through chemical bonding of the functional groups together; and the polymer is filled in the network structure. Also provided is a method of manufacturing a composite which includes the steps of: supplying a base body surface with a solution containing multiple carbon nanotubes to which multiple functional groups are bonded; mutually cross-linking the multiple carbon nanotubes through chemical bonding of the multiple functional groups together to construct a network structure constituting a carbon nanotube structure; impregnating the network structure with a polymer liquid forming a polymer; and combining the carbon nanotube structure and the polymer by curing the polymer liquid. | 06-03-2010 |
Patent application number | Description | Published |
20120012929 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the second conductivity type, a fifth semiconductor layer of the first conductivity type, a control electrode, a first main electrode, a second main electrode, and a sixth semiconductor layer of the first conductivity type. The second semiconductor layer and the third semiconductor layer are alternately provided on the first semiconductor layer in a direction substantially parallel to a major surface of the first semiconductor layer. The fourth semiconductor layer is provided on the second semiconductor layer and the third semiconductor layer. The fifth semiconductor layer is selectively provided on a surface of the fourth semiconductor layer. The control electrode is provided in a trench via an insulating film. The trench penetrates through the fourth semiconductor layer from a surface of the fifth semiconductor layer and is in contact with the second semiconductor layer. The first main electrode is connected to the first semiconductor layer. The second main electrode is connected to the fourth semiconductor layer and the fifth semiconductor layer. The sixth semiconductor layer is provided between the fourth semiconductor layer and the second semiconductor layer. An impurity concentration of the sixth semiconductor layer is higher than an impurity concentration of the second semiconductor layer. | 01-19-2012 |
20120056262 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, an embedded electrode, a control electrode, a fourth semiconductor layer of the second conductivity type, a first main electrode, and a second main electrode. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The embedded electrode is provided in a first trench via a first insulating film. The first trench penetrates through the second semiconductor layer from a surface of the third semiconductor layer to reach the first semiconductor layer. The control electrode is provided above the embedded electrode via a second insulating film in the first trench. The fourth semiconductor layer is selectively provided in the first semiconductor layer and is connected to a lower end of a second trench. The second trench penetrates through the second semiconductor layer from the surface of the third semiconductor layer to reach the first semiconductor layer. The first main electrode is electrically connected to the first semiconductor layer. The second main electrode is provided in the second trench and connected to the second semiconductor layer, the third semiconductor layer and the fourth semiconductor layer. The embedded electrode is electrically connected to one of the second main electrode and the control electrode. A Schottky junction formed of the second main electrode and the first semiconductor layer is formed at a sidewall of the second trench. | 03-08-2012 |
20120068258 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor device includes a first main electrode, a control electrode, an extraction electrode, a second insulating film, a plurality of contact electrodes, and a control terminal. The first main electrode is electrically connected to a first semiconductor region of a first conductivity type and a second semiconductor region of a second conductivity type selectively provided on a surface of the first semiconductor region. The control electrode is provided on the first semiconductor region via a first insulating film. The extraction electrode is electrically connected to the control electrode. The second insulating film is provided on the first main electrode and the extraction electrode. The plurality of contact electrodes are provided in an inside of a plurality of first contact holes formed in the second insulating film and are electrically connected to the extraction electrode. The control terminal covers portions of the first main electrode provided on the first semiconductor region, on the second semiconductor region, and on the control electrode, respectively, and the extraction electrode, is electrically connected to the plurality of contact electrodes, and is electrically insulated from the first main electrode by the second insulating film. | 03-22-2012 |
20120074461 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to an embodiment, a semiconductor device includes a second semiconductor layer provided on a first semiconductor layer and including first pillars and second pillars. A first control electrode is provided in a trench of the second semiconductor layer and a second control electrode is provided on the second semiconductor layer and connected to the first control electrode. A first semiconductor region is provided on a surface of the second semiconductor layer except for a portion under the second control electrode. A second semiconductor region is provided on a surface of the first semiconductor region, the second semiconductor region being apart from the portion under the second control electrode and a third semiconductor region is provided on the first semiconductor region. A first major electrode is connected electrically to the first semiconductor layer and a second major electrode is connected electrically to the second and the third semiconductor region. | 03-29-2012 |
20120217555 | SEMICONDUCTOR DEVICE - A first semiconductor device of an embodiment includes a first semiconductor layer of a first conductivity type, a first control electrode, an extraction electrode, a second control electrode, and a third control electrode. The first control electrode faces a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of a first conductivity type, via a first insulating film. The second control electrode and the third control electrode are electrically connected to the extraction electrode, and face the second semiconductor layer under the extraction electrode, via the second insulating film. At least a part of the second control electrode and the whole of the third control electrode are provided under the extraction electrode. The electrical resistance of the second control electrode is higher than the electrical resistance of the third control electrode. | 08-30-2012 |
20120241817 | SEMICONDUCTOR DEVICE - According to an embodiment, a semiconductor device includes a first semiconductor layer, a second semiconductor layer, a control electrode, a third semiconductor layer, first and second main electrodes. The second semiconductor layer is provided on the first semiconductor layer, and has a higher impurity concentration than the first semiconductor layer. The control electrode is provided inside a first trench with an insulating film interposed, the first trench reaching the first semiconductor layer from a front surface of the second semiconductor layer. The third semiconductor layer is provided inside a second trench and including Si | 09-27-2012 |
20120241847 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductive type, and a periodic array structure having a second semiconductor layer of a first conductive type and a third semiconductor layer of a second conductive type periodically arrayed on the first semiconductor layer in a direction parallel with a major surface of the first semiconductor layer. The second semiconductor layer and the third semiconductor layer are disposed in dots on the first semiconductor layer. A periodic structure in the outermost peripheral portion of the periodic array structure is different from a periodic structure of the periodic array structure in a portion other than the outermost peripheral portion. | 09-27-2012 |