Patent application number | Description | Published |
20100025706 | NANOPARTICLE BASED INORGANIC BONDING MATERIAL - A method for the production of a light emitting device is provided, comprising providing at least one LED | 02-04-2010 |
20100072531 | Method for Forming a Memory Cell Comprising a Capacitor Having a Strontium Titaniumoxide Based Dielectric Layer and Devices Obtained Thereof - A method is disclosed for manufacturing Sr | 03-25-2010 |
20100258831 | SIDE EMITTING DEVICE WITH HYBRID TOP REFLECTOR - A side-emitting light emitting device ( | 10-14-2010 |
20100326519 | HIDDEN ORGANIC OPTOELECTRONIC DEVICES WITH A LIGHT SCATTERING LAYER - An optoelectronic device ( | 12-30-2010 |
20120075767 | Method for Producing a Metal-Insulator-Metal Capacitor for Use in Semiconductor Devices - Methods of manufacturing metal-insulator-metal capacitor structures, and the metal-insulator-metal capacitor structures obtained, are disclosed. In one embodiment, a method includes providing a substrate, forming on the substrate a first metal layer comprising a first metal, and using atomic layer deposition with an H | 03-29-2012 |
20120092807 | Metal-Insulator-Metal Capacitor and Method for Manufacturing Thereof - The disclosure provides a method for producing a stack of layers on a semiconductor substrate. The method includes producing a substrate a first conductive layer; and producing by ALD a sub-stack of layers on said conductive layer, at least one of said layers of the sub-stack being a TiO | 04-19-2012 |
20130100577 | Method for Forming a MIMCAP Structure and the MIMCAP Structure Thereof - A method for forming a Metal-Insulator-Metal Capacitor (MIMCAP) structure and the MIMCAP structure thereof are described. An example electronic device includes a first electrode, and a layer of a dielectric material including titanium oxide and a first dopant ion. The layer of the dielectric material is formed on the first electrode. The first dopant ion has a size mismatch of 10% or lower compared to the Ti | 04-25-2013 |
20130155572 | Metal-Insulator-Metal Stack and Method for Manufacturing the Same - A method for manufacturing a metal-insulator-metal (MIM) stack is described. The method includes forming a temporary stack by depositing a bottom electrode comprising at least one metal layer; depositing a dielectric comprising at least one layer of a dielectric material having a first dielectric constant value; and depositing a top electrode comprising at least one metal layer. The step of depositing the bottom and/or top electrode includes depositing a non-conductive metal oxide layer directly in contact with the dielectric; and after the step of depositing the bottom and/or top electrode's non-conductive metal oxide layer and the dielectric, subjecting the temporary stack to a stimulus, which transforms the non-conductive metal oxide into a thermodynamically stable oxide having conductive properties or into a metal, and the dielectric material into a crystalline form having a second dielectric constant value higher than the first dielectric constant value, thereby creating the final MIM stack. | 06-20-2013 |
20140054573 | Hidden organic optoelectronic devices - An optoelectronic device comprising at least one optoelectronic active region comprising at least a rear electrode and a front electrode between which an organic optoelectronic material is sandwiched, said rear electrode being reflective, and a cover layer arranged in front of said front electrode. The cover layer comprises a material with light-scattering particles of a first material dispersed in a transparent matrix of at an least partly hydrolyzed silica sol. | 02-27-2014 |