Patent application number | Description | Published |
20080217745 | Nitride Semiconductor Wafer - A nitride semiconductor substrate having properties preferable for the manufacture of various nitride semiconductor devices is made available, by specifying or controlling the local variation in the off-axis angle of the principal surface of the nitride semiconductor substrate. The substrate, being misoriented, is manufactured to have an off-axis angle distribution across its principal surface such that variation Δθ in the off-axis angle is continuous within a predetermined angular range. | 09-11-2008 |
20090087645 | Method for Manufacturing Aluminum Nitride Crystal, Aluminum Nitride Crystal, Aluminum Nitride Crystal Substrate and Semiconductor Device - Affords methods of manufacturing AlN crystals, and AlN crystals, AlN crystal substrates, and semiconductor devices fabricated employing the AlN crystal substrates, that enable semiconductor devices having advantageous properties to be obtained. One aspect of the present invention is an AlN crystal manufacturing method including a step of growing AlN crystal onto the surface of a SiC seed-crystal substrate, and a step of picking out at least a portion of the AlN crystal lying a range of from 2 mm to 60 mm from the SiC seed-crystal substrate surface into the AlN crystal. Furthermore, other aspects are AlN crystals and AlN crystal substrates manufactured by the method, and semiconductor devices fabricated employing the AlN crystal substrates. | 04-02-2009 |
20090158994 | METHOD FOR GROWING GROUP III NITRIDE SEMICONDUCTOR CRYSTAL AND GROWING DEVICE FOR GROUP III NITRIDE SEMICONDUCTOR CRYSTAL - A method for growing a Group III nitride semiconductor crystal is provided with the following steps: First, a chamber including a heat-shielding portion for shielding heat radiation from a material | 06-25-2009 |
20090208749 | Group III Nitride Single Crystal and Method of Its Growth - Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal ( | 08-20-2009 |
20090236694 | Method of Manufacturing III-Nitride Crystal, and Semiconductor Device Utilizing the Crystal - The present III-nitride crystal manufacturing method, a method of manufacturing a III-nitride crystal ( | 09-24-2009 |
20090280354 | Process for Producing Substrate of AlN Crystal, Method of Growing AlN Crystal, and Substrate of AlN Crystal - Affords AlN crystal substrate manufacturing methods whereby large-scale, high-quality AlN crystal substrates can be manufactured; AlN crystal growth methods whereby bulk AlN of superior crystallinity can be grown; and AlN crystal substrates composed of the AlN crystal grown by the growth methods. AlN crystal substrate manufacturing method including: a step of growing an AlN crystal by sublimation onto a heterogeneous substrate to a thickness of, with respect to the heterogeneous-substrate diameter r, 0.4 | 11-12-2009 |
20100033806 | Wavelength Converter Manufacturing Method and Wavelength Converter - Affords a wavelength converter manufacturing method and a wavelength converter whereby the transmissivity can be improved. A method of manufacturing a wavelength converter ( | 02-11-2010 |
20100147211 | -Nitride Single-Crystal Growth Method - This III-nitride single-crystal growth method, being a method of growing a Al | 06-17-2010 |
20100221539 | AlN Crystal and Method for Growing the Same, and AlN Crystal Substrate - Affords large-diametric-span AlN crystals, applicable to various types of semiconductor devices, with superior crystallinity, a method of growing the AlN crystals, and AlN crystal substrates. The AlN crystal growth method is a method in which an AlN crystal ( | 09-02-2010 |
20100233433 | Method for Growing AlxGa1-xN Crystal, and AlxGa1-xN Crystal Substrate | 09-16-2010 |
20100242833 | AlN Crystal and Method of Its Growth - The present invention makes available an AlN crystal growth method enabling large-area, thick AlN crystal to be stably grown. An AlN crystal growth method of the present invention is provided with a step of preparing an SiC substrate ( | 09-30-2010 |
20100307405 | Method for Growing AlxGa1-xN Single Crystal - Affords a method of growing large-scale, high-quality Al | 12-09-2010 |
20100319614 | Compound Semiconductor Single-Crystal Manufacturing Device and Manufacturing Method - A compound semiconductor single-crystal manufacturing device ( | 12-23-2010 |
20120315445 | Group-III Nitride Crystal Composite - III-nitride crystal composites are made up of especially processed crystal slices cut from III-nitride bulk crystal having, ordinarily, a {0001} major surface and disposed adjoining each other sideways, and of III-nitride crystal epitaxially on the bulk-crystal slices. The slices are arranged in such a way that their major surfaces parallel each other, but are not necessarily flush with each other, and so that the [0001] directions in the slices are oriented in the same way. | 12-13-2012 |
20130015414 | AlxGa1-xN Crystal Substrate | 01-17-2013 |
20130160699 | Method of Manufacturing III-Nitride Crystal - Provided is a method of manufacturing III-nitride crystal having a major surface of plane orientation other than {0001}, designated by choice, the III-nitride crystal manufacturing method including: a step of slicing III-nitride bulk crystal through a plurality of planes defining a predetermined slice thickness in the direction of the designated plane orientation, to produce a plurality of III-nitride crystal substrates having a major surface of the designated plane orientation; a step of disposing the substrates adjoining each other sideways in a manner such that the major surfaces of the substrates parallel each other and such that any difference in slice thickness between two adjoining III-nitride crystal substrates is not greater than 0.1 mm; and a step of growing III-nitride crystal onto the major surfaces of the substrates. | 06-27-2013 |
20140175616 | Composite of III-Nitride Crystal on Laterally Stacked Substrates - Group-III nitride crystal composites made up of especially processed crystal slices, cut from III-nitride bulk crystal, whose major surfaces are of {1-10±2}, {11-2±2}, {20-2±1} or {22-4±1} orientation, disposed adjoining each other sideways with the major-surface side of each slice facing up, and III-nitride crystal epitaxially present on the major surfaces of the adjoining slices, with the III-nitride crystal containing, as principal impurities, either silicon atoms or oxygen atoms. | 06-26-2014 |
20140357067 | METHOD OF MANUFACTURING NITRIDE SUBSTRATE, AND NITRIDE SUBSTRATE - A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal. | 12-04-2014 |