Patent application number | Description | Published |
20080218556 | LIQUID DROPLET EJECTION HEAD, LIQUID DROPLET EJECTION DEVICE, AND IMAGE FORMING APPARATUS - A liquid droplet ejection had having: a vibrating pate at which is formed a piezoelectric element which deforms when voltage is applied; a wiring board disposed above the piezoelectric element, an electric wire for deforming the piezoelectric element being disposed at the wiring board; a liquid storage chamber provided at a side opposite to the piezoelectric element, with the wiring board sandwiched therebetween; a pressure chamber provided at a side opposite to the wiring board, with the vibrating plate sandwiched therebetween; an ejection opening that ejects liquid droplets from the pressure chamber; a liquid supply opening that supplies liquid within the liquid storage chamber to the pressure chamber; and an electrical connection portion that passes through the wiring board and electrically connects the piezoelectric element and the electric wire through the liquid supply opening, is provided. | 09-11-2008 |
20080250883 | Sensor chip and inspection device - A sensor chip of an electrical signal detection type, comprises a semiconductor sensing device, the sensor chip being detachable with respect to an inspection device. | 10-16-2008 |
20090307905 | DROPLET DISCHARGING HEAD AND MANUFACTURING METHOD FOR THE SAME, AND DROPLET DISCHARGING DEVICE - A droplet discharging head comprises a pressure chamber in which fluid is filled through a channel, and a nozzle that is connected to the pressure chamber and which discharges the fluid as a droplet. After the droplet discharging head is assembled, at least the wall surfaces contacting the fluid are coated with a carbonized silicon film. | 12-17-2009 |
20100052492 | EXPOSURE DEVICE AND LIGHT-EMITTING DEVICE - The exposure device that exposes a charged image carrier includes: a light-emitting chip on which light-emitting elements are arrayed in a first scan direction; and a circuit board on which the light-emitting chip is mounted and that includes wiring electrically connected to the light-emitting chip. The light-emitting chip includes: a light-emitting element chip including a first substrate and the light-emitting elements on one surface of the first substrate; a drive element chip including a second substrate, a drive element on the second substrate driving the light-emitting elements and a penetration hole in the second substrate; a first connecting member electrically connecting the light-emitting elements to the drive element, while the light-emitting elements face the penetration hole; and a second connecting member electrically connecting the drive element to the wiring, while a mounting surface of the drive element chip for fixing the light-emitting element chip faces the circuit board. | 03-04-2010 |
20100071212 | INK JET RECORDING HEAD AND METHOD OF MANUFACTURING THE SAME - An ink jet recording head is formed by laminating a nozzle plate, ink pool plates, a through plate, an ink supply path plate, a pressure chamber plate and a vibrating plate in order. These members of the head are bonded to each other with an adhesive. An inner wall of an ink channel is covered with a channel film for continuously covering the entire inner wall. | 03-25-2010 |
20110037093 | LIGHT-EMITTING ELEMENT AND LIGHT-EMITTING ELEMENT FABRICATION METHOD - According to an aspect of the invention, a light-emitting element includes a semiconductor layer, a gold electrode layer, an insulator, a barrier metal layer, and an aluminum wiring layer. The gold electrode layer is formed on a part of the semiconductor layer and is electrically connected to the semiconductor layer. The gold electrode layer being made of metal including gold. The insulator film covers the semiconductor layer and has a contact opening corresponding to the gold electrode layer. The barrier metal layer covers a an upper face of the gold electrode layer and the insulator film in a vicinity of the contact opening. The aluminum wiring layer is formed on the barrier metal layer and electrically connected to the barrier metal layer. | 02-17-2011 |
20110284917 | COMPOUND SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE - A compound semiconductor device includes: an Au alloy electrode, an interlayer insulating film, a metal interconnection, and an oxide film. The Au alloy electrode is formed on a compound semiconductor. The interlayer insulating film is formed on the Au alloy electrode. The metal interconnection is connected to the Au alloy electrode via a contact hole formed in the interlayer insulating film. The oxide film is formed at an interface between the Au alloy electrode and the interlayer insulating film, dominating component of the oxide film is a constituent element of the compound semiconductor. | 11-24-2011 |
20120194617 | METHOD OF MANUFACTURING SUBSTRATE AND SUBSTRATE, METHOD OF MANUFACTURING LIQUID DROP EJECTING HEAD AND LIQUID DROP EJECTING HEAD, AND LIQUID DROP EJECTING DEVICE - The present invention provides a method of manufacturing a substrate which forms a wiring pattern on a substrate having a plurality of through-holes. In the method, the wiring pattern is formed, after burying a filling material into the through-holes and planarizing a surface of the substrate. The filling material may be a conductive material, and a portion of the conductive material may be removed after the wiring pattern is formed. Removal of the portion of the conductive material may be carried out after a protective film, which protects the wiring pattern, is formed. The filling material may be a conductive material and a sacrificial material, and the sacrificial material may be removed after the wiring pattern is formed. | 08-02-2012 |
20130234168 | LIGHT-EMITTING ELEMENT, METHOD OF MANUFACTURING LIGHT-EMITTING ELEMENT, SELF-SCANNING LIGHT-EMITTING ELEMENT ARRAY, OPTICAL WRITING HEAD, AND IMAGE FORMING APPARATUS - Provided is a light-emitting element including a semiconductor substrate, an island structure formed on the semiconductor substrate and including at least a current confining layer and p-type and n-type semiconductor layers, a light-emitting thyristor formed in the island structure and having a pnpn structure, and a shift thyristor formed in the island structure and having a pnpn structure, wherein the island structure includes a first side surface having a first depth such that the first side surface does not reach the current confining layer in a formation region of the shift thyristor and a second side surface having a second depth such that the second side surface reaches at least the current confining layer in a formation region of the light-emitting thyristor, and an oxidized region selectively oxidized from the second side surface is formed in the current confining layer in the formation region of the light-emitting thyristor. | 09-12-2013 |