Patent application number | Description | Published |
20080251793 | JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N JUNCTIONS AND METHODS OF MAKING - A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p | 10-16-2008 |
20080290927 | Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETS) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 11-27-2008 |
20100020581 | POWER CONVERSION COMPONENTS, SYSTEMS AND METHODS - Components, systems and methods for generating variable frequency AC voltage from a DC power supply are described. The components include a fullbridge (FB) parallel load resonant (PLR) converter which operates in discontinuous conduction mode. The PLR converter includes MOSFETs in an H-bridge configuration and employs a topology which minimizes inductance. The PLR converter can be coupled to a single or poly-phase bridge for use as an inverter. The inverter can be used to produce an AC sinusoidal waveform from a low voltage, high current DC power supply. Systems and techniques for modulating the output from the PLR converter to produce an AC sinusoidal waveform having desired characteristics, including frequency and voltage, are also provided. The PLR converter can also be coupled to a rectifier for use as a DC-DC converter. | 01-28-2010 |
20100026370 | HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETS) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 02-04-2010 |
20110003456 | SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULATING EPITAXY - A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer. | 01-06-2011 |
20110121884 | HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 05-26-2011 |
20120199940 | SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULATING EPITAXY - A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer. | 08-09-2012 |
20120214275 | OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS AND THYRISTORS - An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype. | 08-23-2012 |
20130140585 | JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N JUNCTIONS AND METHODS OF MAKING - A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p | 06-06-2013 |
20130265095 | HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 10-10-2013 |
20130320199 | OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS AND THYRISTORS - An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype. | 12-05-2013 |