Patent application number | Description | Published |
20080303187 | Imprint Fluid Control - An imprint lithography template with an active area arranged to receive imprinting material during an imprint lithography process and a non-active area adjacent the active area is described. At least a portion of the non-active area is treated to inhibit flow of the imprinting material from the active area to the non-active area during the imprint lithography process. | 12-11-2008 |
20090130598 | Method of Creating a Template Employing a Lift-Off Process - A method of forming a lithographic template, the method including, inter alia, creating a multi-layered structure, by forming, on a body, a conducting layer, and forming on the conducting layer, a patterned layer having protrusions and recessions, the recessions exposing portions of the conducting layer; depositing a hard mask material anisotropically on the multi-layered structure covering a top surface of the patterned layer and the portions of the conducting layer; removing the patterned layer by a lift-off process, with the hard mask material remaining on the portions of the conducting layer; positioning a resist pattern on the multi-layered structure to define a region of the multi-layered structure; and selectively removing portions of the multi-layered structure in superimposition with the region using the hard mask material as an etching mask. | 05-21-2009 |
20090200266 | Template Pillar Formation - Materials for forming an imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials. | 08-13-2009 |
20090212012 | CRITICAL DIMENSION CONTROL DURING TEMPLATE FORMATION - Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer. | 08-27-2009 |
20090272875 | Composition to Reduce Adhesion Between a Conformable Region and a Mold - An imprint lithography mold assembly includes a mold having a surface, a substrate having a surface, and a polymerizable composition disposed between the surface of the mold and the surface of the substrate. The polymerizable composition includes a bulk material and a non-ionic surfactant having a first end and a second end. The first end of the non-ionic surfactant has an affinity for the bulk material, and the second end of the non-ionic surfactant is fluorinated. | 11-05-2009 |
20100095862 | Double Sidewall Angle Nano-Imprint Template - The present application describes a template with feature profiles that have multiple sidewall angles. The multiple sidewall angles facilitate control over critical dimensions and reduce issues related to template release. | 04-22-2010 |
20100102469 | Strain and Kinetics Control During Separation Phase of Imprint Process - Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process. | 04-29-2010 |
20100109194 | Master Template Replication - Systems and methods for providing multiple replicas from a master template are described. Replicas may be formed having a mesa. In one embodiment, a dummy fill region may be included on master template and/or replicas. | 05-06-2010 |
20100112310 | Substrate Patterning - Systems and methods for providing identification patterns on substrates are described. | 05-06-2010 |
20110140306 | Composition for an Etching Mask Comprising a Silicon-Containing Material - The present invention includes a composition for a silicon-containing material used as an etch mask for underlying layers. More specifically, the silicon-containing material may be used as an etch mask for a patterned imprinted layer comprising protrusions and recessions. To that end, in one embodiment of the present invention, the composition includes a hydroxyl-functional silicone component, a cross-linking component, a catalyst component, and a solvent. This composition allows the silicon-containing material to selectively etch the protrusions and the segments of the patterned imprinting layer in superimposition therewith, while minimizing the etching of the segments in superposition with the recessions, and therefore allowing an in-situ hardened mask to be created by the silicon-containing material, with the hardened mask and the patterned imprinting layer forming a substantially planarized profile. | 06-16-2011 |
20110180127 | SOLAR CELL FABRICATION BY NANOIMPRINT LITHOGRAPHY - Fabricating a solar cell stack includes forming a nanopatterned polymeric layer on a first surface of a silicon wafer and etching the first surface of the silicon wafer to transfer a pattern of the nanopatterned polymeric layer to the first surface of the silicon wafer. A layer of reflective electrode material is formed on a second surface of the silicon wafer. The nanopatterned first surface of the silicon wafer undergoes a buffered oxide etching. After the buffered oxide etching, the nanopatterned first surface of the silicon wafer is treated to decrease a contact angle of water on the nanopatterned first surface. Electron donor material is deposited on the nanopatterned first surface of the silicon wafer to form an electron donor layer, and a transparent electrode material is deposited on the electron donor layer to form a transparent electrode layer on the electron donor layer. | 07-28-2011 |
20110183027 | Micro-Conformal Templates for Nanoimprint Lithography - A micro-conformal nanoimprint lithography template includes a backing layer and a nanopatterned layer adhered to the backing layer. The elastic modulus of the backing layer exceeds the elastic modulus of the nanopatterned layer. The micro-conformal nanoimprint lithography template can be used to form a patterned layer from an imprint resist on a substrate, the substrate having a micron-scale defect, such that an excluded distance from an exterior surface of the micron-scale defect to the patterned layer formed by the nanoimprint lithography template is less than a height of the defect. The nanoimprint lithography template can be used to form multiple imprints with no reduction in feature fidelity. | 07-28-2011 |
20110183521 | METHODS AND SYSTEMS OF MATERIAL REMOVAL AND PATTERN TRANSFER - Polymerized material on a substrate may be removed by exposure to vacuum ultraviolet (VUV) radiation from an energy source within a gaseous atmosphere of a controlled composition. Following such removal, additional etching techniques are also described for nano-imprinting. | 07-28-2011 |
20110189329 | Ultra-Compliant Nanoimprint Lithography Template - An ultra-compliant nanoimprint lithography template having a backing layer and a nanopatterned layer adhered to the backing layer. The nanopatterned layer includes nanoscale features formed by solidifying a polymerizable material in contact with a mold. The polymerizable material includes a fluoroelastomer and a photoinitiator. The backing layer has a higher elastic modulus than the nanopatterned layer. The ultra-compliant nanoimprint lithography template can be used to form multiple high fidelity imprints. | 08-04-2011 |
20110215503 | Reducing Adhesion between a Conformable Region and a Mold - Improved preferential adhesion and release characteristics are described with respect to a substrate and a mold having imprinting material disposed therebetween, in the absence of an a priori release layer on the mold. The imprinting material is a polymerizable material including a fluorinated surfactant and a photoinitiator. The surfactant includes —CH | 09-08-2011 |
20110277827 | NANOSTRUCTURED SOLAR CELL - Systems and methods for fabrication of nanostructured solar cells having arrays of nanostructures are described, including nanostructured solar cells having a repeating pattern of pyramid nanostructures, providing for low cost thin-film solar cells with improved PCE. | 11-17-2011 |
20110277833 | BACKSIDE CONTACT SOLAR CELL - Variations of interdigitated backside contact (IBC) solar cells having patterned areas formed using nano imprint lithography are described. | 11-17-2011 |
20120111832 | Template Pillar Formation - Methods for forming an imprint lithography template are provided. Materials for forming the imprint lithography template may be etched at different rates based on physical properties of the layers. Additionally, reflectance of the materials may be monitored to provide substantially uniform erosion of the materials. | 05-10-2012 |
20120187085 | CRITICAL DIMENSION CONTROL DURING TEMPLATE FORMATION - Thickness of a residual layer may be altered to control critical dimension of features in a patterned layer provided by an imprint lithography process. The thickness of the residual layer may be directly proportional or inversely proportional to the critical dimension of features. Dispensing techniques and material selection may also provide control of the critical dimension of features in the patterned layer. | 07-26-2012 |
20120214066 | High Aspect Ratio Patterning of Silicon - A silicon nanowire array including a multiplicity of silicon nanowires extending from a silicon substrate. Cross-sectional shape of the silicon nanowires and spacing between the silicon nanowires can be selected to maximize the ratio of the surface area of the silicon nanowires to the volume of the nanowire array. Methods of forming the silicon nanowire array include a nanoimprint lithography process to form a template for the silicon nanowire array and an electroless etching process to etch the template formed by the nanoimprint lithography process. | 08-23-2012 |
20130153534 | FABRICATION OF SEAMLESS LARGE AREA MASTER TEMPLATES FOR IMPRINT LITHOGRAPHY USING STEP AND REPEAT TOOLS - Described are methods of forming large area templates useful for patterning large area optical devices including e.g. wire grid polarizers (WGPs). Such methods provide for seamless patterning of such large area devices. | 06-20-2013 |
20130214452 | LARGE AREA IMPRINT LITHOGRAPHY - Methods and systems are provided for patterning polymerizable material dispensed on flexible substrates or flat substrates using imprint lithography techniques. Template replication methods and systems are also presented where patterns from a master are transferred to flexible substrates to form flexible film templates. Such flexible film templates are then used to pattern large area flat substrates. Contact between the imprint template and substrate can be initiated and propagated by relative translation between the template and the substrate. | 08-22-2013 |
20140117574 | Strain and Kinetics Control During Separation Phase of Imprint Process - Systems and methods for improving robust layer separation during the separation process of an imprint lithography process are described. Included are methods of matching strains between a substrate to be imprinted and the template, varying or modifying the forces applied to the template and/or the substrate during separation, or varying or modifying the kinetics of the separation process. | 05-01-2014 |