Patent application number | Description | Published |
20090212280 | Use of a Metal Complex as an N-Dopant for an Organic Semiconducting Matrix Material, Organic of Semiconducting Material and Electronic Component, and also a Dopant and Ligand and Process for Producing same - A method of using a metal complex as an n-dopant for doping an organic semiconducting matrix material in order to alter the latter's electrical characteristics is provided. In order to provide n-doped organic semiconductors with matrix materials having a low reduction potential, while achieving high conductivities, the n-dopant is a neutral electron-rich metal complex with a neutral or charged transition metal atom as a central atom and having at least 16 valence electrons. The complex can be polynuclear and can possess at least one metal-metal bond. At least one ligand can form a π complex with the central atom, which can be a bridge ligand, or it can contain at least one carbanion-carbon atom or a divalent atom. Methods for providing the novel n-dopants are provided. | 08-27-2009 |
20100140566 | ARYL-SUBSTITUTED AND/OR HETEROARYL-SUBSTITUTED MAIN GROUP ELEMENT HALIDES AND/OR PSEUDOHALIDES, USE OF MAIN GROUP ELEMENT HALIDES AND/OR PSEUDOHALIDES, ORGANIC SEMICONDUCTING MATRIX MATERIAL, ELECTRONIC AND OPTOELECTRONIC COMPONENTS - The invention relates to aryl- and/or heteroaryl-substituted main group element halides and/or pseudohalides, the use of main group element halides and/or pseudohalides as dopant for the doping of an organic semiconducting matrix material, as charge injection layer, as hole blocker layer, as electrode material, as transport material itself, as memory material in electronic or optoelectronic structural elements. | 06-10-2010 |
20100187515 | Use of a Precursor of an N-Dopant for Doping an Organic Semiconductive Material, Precursor and Electronic or Optoelectronic Component - Use of a precursor of an n-dopant for doping an organic semiconductive material, as a blocking layer, as a charge injection layer, as an electrode material, as a storage material or as a semiconductor material itself in electronic or optoelectronic components, the precursor being selected from the following formulae 1-3c: | 07-29-2010 |
20100233844 | Method for Preparing Doped Organic Semiconductor Materials and Formulation Utilized Therein - The present invention relates to a method for preparing doped organic semiconductor materials | 09-16-2010 |
20110108772 | Use of Heterocyclic Radicals for Doping Organic Semiconductors - The present invention relates to the use of heterocyclic radicals or diradicals, their dimers, oligomers, polymers, dispiro compounds and polycycles for use as dopant for doping an organic semiconductive matrix material, where the dopants have a structure based on the following formulae. | 05-12-2011 |
20120146012 | Heterocyclic Radical or Diradical, The Dimers, Oligomers, Polymers, Dispiro Compounds and Polycycles Thereof, the Use Thereof, Organic Semiconductive Material and Electronic or Optoelectronic Component - The present invention relates to heterocyclic radicals or diradicals, the dimers, oligomers, polymers, dispiro compounds and polycycles thereof, to the use thereof, to organic semiconductive materials and to electronic and optoelectronic components. | 06-14-2012 |
20130184471 | Process for the preparation of bendamustine hydrochloride and related compounds - The present invention relates to a process for preparing bendamustine hydrochloride, derivatives and related compounds thereof. | 07-18-2013 |
20130289032 | ESTERS OF BENDAMUSTINE AND RELATED COMPOUNDS, AND MEDICAL USE THEREOF - The present invention relates to particular esters of bendamustine and related compounds, and medical uses thereof. | 10-31-2013 |
20140356314 | 3-[3-(DIMETHYLAMINO)-1-ETHYL-2-METHYLPROPYL]PHENOL RESIN COMPLEX - The present invention discloses a 3-[3-(dimethylamino)-1-ethyl-2-methylpropyl]phenol resin complex, preferably an amorphous 3-[3-(dimethylamino)-1-ethyl-2-methylpropyl]phenol resin complex formed by the reaction between a cation exchange resin and 3-[3-(dimethylamino)-1-ethyl-2-methylpropyl]phenol or a pharmaceutically acceptable acid addition salt thereof. It can exhibit an in-vitro release rate of 3-[3-(dimethylamino)-1-ethyl-2-methylpropyl]phenol from the 3-[3-(dimethylamino)-1-ethyl-2-methylpropyl]phenol resin complex which is in accordance with the requirements of Ph. Eur. on “conventional-release dosage forms”. | 12-04-2014 |