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| 20080295956 | METHOD AND DEVICE FOR LAMINATING ESSENTIALLY PLATE-SHAPED WORKPIECES UNDER THE EFFECT OF PRESSURE AND HEAT - A method and a device for laminating essentially plate-shaped workpieces | 12-04-2008 |
| 20080295967 | MULTI-LEVEL LAMINATING PRESS - A multi-layer laminating press for laminating essentially planar work pieces under the influence of pressure and heat, including: a number of hot plates arranged over top of each other and movable in reference to each other; a number of conveyers revolving around the hot plates each having an upper run and a lower run; sealing elements each arranged between the hot plates and the conveyers to form vacuum chambers between each of a first hot plate and a respectively adjacent second hot plate arranged thereabove when the press is closed. The lower run of the second conveyer of the second hot plate rests on the upper run of the first conveyer of the first hot plate and the work piece to be laminated is arranged between the upper run of the first conveyer and the lower run of the second conveyer in the vacuum chamber. Connections are provided to pressurize and/or evacuate the vacuum chambers. The vacuum chambers each are limited without any interposition of a membrane by, on the one hand, the first hot plate and, on the other hand, the lower run of the second conveyer, or, on the one hand, the second hot plate and, on the other hand, the upper run of the first conveyer. | 12-04-2008 |
| 20090294036 | PRESS AND METHOD FOR LAMINATING ESSENTIALLY PLATE-SHAPED WORKPIECES - A press and a method for laminating essentially plate-shaped workpieces under the effect of pressure and heat. In the closed state, a lower press half and an upper press half form a vacuum chamber utilizing a peripheral, one-part, or multi-part seals. A flexible membrane divides the vacuum chamber into a product half that can be evacuated that holds at least one workpiece and a pressure half that can be pressurized. The membrane is constructed and arranged so that it presses the workpiece directly or indirectly against a bottom side of the vacuum chamber due to a pressure difference generated in the vacuum chamber due to the evacuation of the product half and/or due to the pressurization of the pressure half. The membrane is mounted on a membrane frame that can be handled separately and that is connected detachably to the upper press half and that can be mounted on the membrane frame or tensioned in the frame from outside of the press. At least one membrane frame with a membrane mounted on the frame is stored as a replacement frame outside of the press in a magazine. | 12-03-2009 |
| 20100018646 | METHOD AND DEVICE FOR LAMINATING ESSENTIALLY PLANAR WORK PIECES UNDER THE EFFECTS OF PRESSURE AND HEAT - A method and a device for laminating essentially planar work pieces with at least one adhesive layer that can be activated by heat, under the effects of pressure and heat. Initially at least one work piece is inserted into a vacuum chamber of a vacuum lamination press which is divided by a gas-tight flexible compression member into a product half and a pressure half. In the product half of the vacuum chamber, the work piece is subjected to a lamination process under the effects of heat, in which the product half is evacuated and the compression member is pressed directly or indirectly against the bottom of the vacuum chamber by the pressure difference developing here and/or by an additional pressurization of the pressure half of the vacuum chamber. The lamination process is interrupted by opening the vacuum lamination press, the work piece is transferred into a laminator, and here it is subjected to a temperature at or above the activation temperature and/or the curing temperature of the adhesive layer. A film, inserted into the vacuum lamination press separately or together with the work piece or a film web guided through the vacuum chamber, is used as the flexible compression member. | 01-28-2010 |
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| 20100037711 | FORCE MEASURING DEVICE - Force measuring device for measuring the force between a first element and a second element of an application, comprising a housing and a sensor arrangement, which is arranged in the housing, the sensor arrangement comprising a first part and a second part and the force between the first element and the second element determining a relative position between the first part and the second part, characterized by at least one spring element, which is positioned between the second element and a support region arranged on the housing, and is supported on the second element and the support region. | 02-18-2010 |
| 20110277281 | BELT HOLDER DEVICE - A belt holder device is provided comprising a housing having a first fixing device, a plate having a second fixing device and being mounted on the housing for displacement in a displacement direction, wherein the belt holder device is held on an application via one of the fixing devices and a belt is held on the other fixing device, a transmitter-sensor device which is arranged in the housing and by means of which the relative position of the plate to the housing is determinable, and a spring device via which the plate is supported on the housing and which provides a return force, wherein the spring device is formed by a flexural spring device, wherein the transmitter is integrated in the plate, wherein the transmitter is arranged in a recess of the plate, and wherein the transmitter in the recess is a magnet and is surrounded by a magnetically insulating enclosure. | 11-17-2011 |
| 20160047702 | LOAD CELL FOR WEIGHT MEASUREMENT - The invention relates to a load cell for weight measurement with a load beam which has an overload protection. | 02-18-2016 |
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| 20090253628 | Use of PEGylated IGF-I variants for the treatment of neuromuscular disorders - The present invention relates to a pharmaceutical composition containing a PEGylated IGF-I variant derived from the wild-type human IGF-I amino acid sequence where one or two of the lysine amino acids at positions 27, 65, and 68 are altered to be a polar amino acid other than lysine and where the PEG is attached to at least one lysine residue. The invention also relates to methods for the treatment, prevention and/or delay of progression of neuromuscular disorders, in particular amyotrophic lateral sclerosis (ALS) by administering a therapeutically effective amount of the pharmaceutical composition of the invention. | 10-08-2009 |
| 20100035817 | METHOD FOR THE PRODUCTION OF CONJUGATES OF INSULIN-LIKE GROWTH FACTOR-1 AND POLY(ETHYLENE GLYCOL) - The present invention relates to a fusion protein comprising IGF-I or an IGF-I variant N-terminally linked to the C-terminus of a propeptide. The invention relates also to a method involving the use of the aforementioned fusion protein in the production of a lysine-PEGylated IGF-I or IGF-I variant. The method comprises the steps of cultivating a prokaryotic host cell comprising an expression vector containing a nucleic acid encoding the fusion protein and causing the cell to express the fusion protein, recovering and PEGylating said fusion protein, cleaving said PEGylated fusion protein with IgA protease, and recovering lysine-PEGylated IGF-I or IGF-I variant. The invention relates also to a lysine-PEGylated IGF-I or IGF-I variant produced using the above method. In addition, the invention relates to a method for treating a neurodegenerative disorders like Alzheimer's Disease using the lysine-PEGylated IGF-I or IGF-I variant and a composition comprising the lysine-PEGylated IGF-I or IGF-I variant. | 02-11-2010 |
| 20100210547 | METHOD FOR THE PRODUCTION OF CONJUGATES OF INSULIN-LIKE GROWTH FACTOR-1 AND POLY(ETHYLENE GLYCOL) - The present invention relates to a fusion protein comprising IGF-I or an IGF-I variant N-terminally linked to the C-terminus of a propeptide. The invention relates also to a method involving the use of the aforementioned fusion protein in the production of a lysine-PEGylated IGF-I or IGF-I variant. The method comprises the steps of cultivating a prokaryotic host cell comprising an expression vector containing a nucleic acid encoding the fusion protein and causing the cell to express the fusion protein, recovering and PEGylating said fusion protein, cleaving said PEGylated fusion protein with IgA protease, and recovering lysine-PEGylated IGF-I or IGF-I variant. The invention relates also to a lysine-PEGylated IGF-I or IGF-I variant produced using the above method. In addition, the invention relates to a method for treating a neurodegenerative disorders like Alzheimer's Disease using the lysine-PEGylated IGF-I or IGF-I variant and a composition comprising the lysine-PEGylated IGF-I or IGF-I variant. | 08-19-2010 |
| 20110009317 | CONJUGATES OF INSULIN-LIKE GROWTH FACTOR-1 AND POLY(ETHYLENE GLYCOL) - A conjugate consisting of an insulin-like growth factor-1 (IGF-I) variant and one or two poly(ethylene glycol) group(s), characterized in that said IGF-I variant has an amino acid alteration at up to three amino acid positions 27, 37, 65, 68 of the wild-type IGF-I amino acid sequence so that one or two of said amino acids is/are lysine and amino acid 27 is a polar amino acid but not lysine, is conjugated via the primary amino group(s) of said lysine(s) and said poly(ethylene glycol) group(s) have an overall molecular weight of from 20 to 100 kDa is disclosed. This conjugate is useful for the treatment of neurodegenerative disorders like Alzheimer's Disease. | 01-13-2011 |
| 20110183903 | USE OF PEGylated IGF-I VARIANTS FOR THE TREATMENT OF NEUROMUSCULAR DISORDERS - The present invention relates to a pharmaceutical composition containing a PEGylated IGF-I variant derived from the wild-type human IGF-I amino acid sequence where one or two of the lysine amino acids at positions 27, 65, and 68 are altered to be a polar amino acid other than lysine and where the PEG is attached to at least one lysine residue. The invention also relates to methods for the treatment, prevention and/or delay of progression of neuromuscular disorders, in particular amyotrophic lateral sclerosis (ALS) by administering a therapeutically effective amount of the pharmaceutical composition of the invention. | 07-28-2011 |
| 20130065831 | METHOD FOR THE PRODUCTION OF CONJUGATES OF INSULIN-LIKE GROWTH FACTOR-1 AND POLY(ETHYLENE GLYCOL) - The present invention relates to a fusion protein comprising IGF-I or an IGF-I variant N-terminally linked to the C-terminus of a propeptide. The invention relates also to a method involving the use of the aforementioned fusion protein in the production of a lysine-PEGylated IGF-I or IGF-I variant. The method comprises the steps of cultivating a prokaryotic host cell comprising an expression vector containing a nucleic acid encoding the fusion protein and causing the cell to express the fusion protein, recovering and PEGylating said fusion protein, cleaving said PEGylated fusion protein with IgA protease, and recovering lysine-PEGylated IGF-I or IGF-I variant. The invention relates also to a lysine-PEGylated IGF-I or IGF-I variant produced using the above method. In addition, the invention relates to a method for treating a neurodegenerative disorders like Alzheimer's Disease using the lysine-PEGylated IGF-I or IGF-I variant and a composition comprising the lysine-PEGylated IGF-I or IGF-I variant. | 03-14-2013 |
| 20130217623 | CONJUGATES OF INSULIN-LIKE GROWTH FACTOR-1 AND POLY(ETHYLENE GLYCOL) - A conjugate consisting of an insulin-like growth factor-1 (IGF-I) variant and one or two poly(ethylene glycol) group(s), characterized in that said IGF-I variant has an amino acid alteration at up to three amino acid positions 27, 37, 65, 68 of the wild-type IGF-I amino acid sequence so that one or two of said amino acids is/are lysine and amino acid 27 is a polar amino acid but not lysine, is conjugated via the primary amino group(s) of said lysine(s) and said poly(ethylene glycol) group(s) have an overall molecular weight of from 20 to 100 kDa is disclosed. This conjugate is useful for the treatment of neurodegenerative disorders like Alzheimer's Disease. | 08-22-2013 |
| 20140073567 | USE OF PEGYLATED IGF-1 VARIANTS FOR THE TREATMENT OF NEUROMUSCULAR DISORDERS - The present invention relates to a pharmaceutical composition containing a PEGylated IGF-I variant derived from the wild-type human IGF-I amino acid sequence where one or two of the lysine amino acids at positions 27, 65, and 68 are altered to be a polar amino acid other than lysine and where the PEG is attached to at least one lysine residue. The invention also relates to methods for the treatment, prevention and/or delay of progression of neuromuscular disorders, in particular amyotrophic lateral sclerosis (ALS) by administering a therapeutically effective amount of the pharmaceutical composition of the invention. | 03-13-2014 |
| 20150099699 | CONJUGATES OF INSULIN-LIKE GROWTH FACTOR-1 AND POLY(ETHYLENE GLYCOL) - A conjugate consisting of an insulin-like growth factor-1 (IGF-I) variant and one or two poly(ethylene glycol) group(s), characterized in that said IGF-I variant has an amino acid alteration at up to three amino acid positions 27, 37, 65, 68 of the wild-type IGF-I amino acid sequence so that one or two of said amino acids is/are lysine and amino acid 27 is a polar amino acid but not lysine, is conjugated via the primary amino group(s) of said lysine(s) and said poly(ethylene glycol) group(s) have an overall molecular weight of from 20 to 100 kDa is disclosed. This conjugate is useful for the treatment of neurodegenerative disorders like Alzheimer's Disease. | 04-09-2015 |
| 20150273023 | Use of PEGylated IGF-I Variants For The Treatment Of Neuromuscular Disorders - The present invention relates to a pharmaceutical composition containing a PEGylated IGF-I variant derived from the wild-type human IGF-I amino acid sequence where one or two of the lysine amino acids at positions 27, 65, and 68 are altered to be a polar amino acid other than lysine and where the PEG is attached to at least one lysine residue. The invention also relates to methods for the treatment, prevention and/or delay of progression of neuromuscular disorders, in particular amyotrophic lateral sclerosis (ALS) by administering a therapeutically effective amount of the pharmaceutical composition of the invention. | 10-01-2015 |
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| 20100193872 | WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER TRANSISTOR FABRICATION BY USING LANTHANUM - The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor. | 08-05-2010 |
| 20100221906 | ENHANCING INTEGRITY OF A HIGH-K GATE STACK BY CONFINING A METAL CAP LAYER AFTER DEPOSITION - During a manufacturing sequence for forming a sophisticated high-k metal gate structure, a cover layer, such as a silicon layer, may be deposited on a metal cap layer in an in situ process in order to enhance integrity of the metal cap layer. The cover layer may provide superior integrity during the further processing, for instance in view of performing wet chemical cleaning processes and the subsequent deposition of a silicon gate material. | 09-02-2010 |
| 20100301427 | WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY SELECTIVELY REMOVING A BARRIER LAYER - In a replacement gate approach in sophisticated semiconductor devices, a tantalum nitride etch stop material may be efficiently removed on the basis of a wet chemical etch recipe using ammonium hydroxide. Consequently, a further work function adjusting material may be formed with superior uniformity, while the efficiency of the subsequent adjusting of the work function may also be increased. Thus, superior uniformity, i.e., less pronounced transistor variability, may be accomplished on the basis of a replacement gate approach in which the work function of the gate electrodes of P-channel transistors and N-channel transistors is adjusted after completing the basic transistor configuration. | 12-02-2010 |
| 20110127590 | INCREASING STABILITY OF A HIGH-K GATE DIELECTRIC OF A HIGH-K GATE STACK BY AN OXYGEN RICH TITANIUM NITRIDE CAP LAYER - In a replacement gate approach, the oxygen contents of a cap material may be increased, thereby providing more stable characteristics of the cap material itself and of the high-k dielectric material. Consequently, upon providing a work function adjusting metal species at a very advanced manufacturing stage, corresponding additional treatments may be reduced in number or may even be completely avoided, while at the same time threshold voltage variations may be reduced. | 06-02-2011 |
| 20110186931 | SEMICONDUCTOR DEVICE FORMED BY A REPLACEMENT GATE APPROACH BASED ON AN EARLY WORK FUNCTION METAL - In a replacement gate approach, one work function metal may be provided in an early manufacturing stage, i.e., upon depositing the gate layer stack, thereby reducing the number of deposition steps required in a later manufacturing stage. Consequently, the further work function metal and the electrode metal may be filled into the gate trenches on the basis of superior process conditions compared to conventional replacement gate approaches. | 08-04-2011 |
| 20120238086 | REDUCING EQUIVALENT THICKNESS OF HIGH-K DIELECTRICS IN FIELD EFFECT TRANSISTORS BY PERFORMING A LOW TEMPERATURE ANNEAL - When forming sophisticated high-k metal gate electrode structures, for instance on the basis of a replacement gate approach, superior interface characteristics may be obtained on the basis of using a thermally grown base material, wherein the electrically effective thickness may be reduced on the basis of a low temperature anneal process. Consequently, the superior interface characteristics of a thermally grown base material may be provided without requiring high temperature anneal processes, as are typically applied in conventional strategies using a very thin oxide layer formed on the basis of a wet oxidation chemistry. | 09-20-2012 |
| 20120315749 | Metal Gate Stack Formation for Replacement Gate Technology - Generally, the subject matter disclosed herein relates to modern sophisticated semiconductor devices and methods for forming the same, wherein a reduced threshold voltage (V | 12-13-2012 |
| 20130017679 | WORK FUNCTION ADJUSTMENT IN HIGH-K METAL GATE ELECTRODE STRUCTURES BY SELECTIVELY REMOVING A BARRIER LAYER - Generally, the present disclosure is directed work function adjustment in high-k metal gate electrode structures. In one illustrative embodiment, a method is disclosed that includes removing a placeholder material of a first gate electrode structure and a second gate electrode structure, and forming a first work function adjusting material layer in the first and second gate electrode structures, wherein the first work function adjusting material layer includes a tantalum nitride layer. The method further includes removing a portion of the first work function adjusting material layer from the second gate electrode structure by using the tantalum nitride layer as an etch stop layer, removing the tantalum nitride layer by performing a wet chemical etch process, and forming a second work function adjusting material layer in the second gate electrode structure and above a non-removed portion of the first work function adjusting material layer in the first gate electrode structure. | 01-17-2013 |
| 20140015058 | WORK FUNCTION ADJUSTMENT IN A HIGH-K GATE ELECTRODE STRUCTURE AFTER TRANSISTOR FABRICATION BY USING LANTHANUM - The work function of a high-k gate electrode structure may be adjusted in a late manufacturing stage on the basis of a lanthanum species in an N-channel transistor, thereby obtaining the desired high work function in combination with a typical conductive barrier material, such as titanium nitride. For this purpose, in some illustrative embodiments, the lanthanum species may be formed directly on the previously provided metal-containing electrode material, while an efficient barrier material may be provided in the P-channel transistor, thereby avoiding undue interaction of the lanthanum species in the P-channel transistor. | 01-16-2014 |
| 20150214322 | SEMICONDUCTOR DEVICE WITH FEROOELECTRIC HAFNIUM OXIDE AND METHOD FOR FORMING SEMICONDUCTOR DEVICE - The present disclosure provides a semiconductor device comprising a substrate, an undoped HfO | 07-30-2015 |
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| 20110167776 | Filter Unit for Filtering Gaseous Fluids - The invention relates to a filter unit for filtering gaseous fluids, comprising a filter insert part with a filter medium and a sealing element, said element being clamped between sealing struts on parts of the filter housing. The clamping force produced by the sealing struts that lie opposite one another runs at least approximately perpendicularly to the mounting direction of the housing parts. | 07-14-2011 |
| 20110308214 | FILTER DEVICE FOR FILTERING GASEOUS FLUIDS - The invention relates to a filter device for filtering gaseous fluids that is provided with a filter insert part that comprises a filter medium and a sealing element, wherein the filter insert part is to be inserted into a filter housing. Furthermore, an additional sealing web is provided between the sealing body of the sealing element and the housing part, wherein the sealing element has a common contact surface with the sealing web, wherein the sealing web is offset in the direction of the clean side of the filter medium with respect to the contact surface. | 12-22-2011 |
| 20120240540 | FILTER HOUSING WITH REPLACEABLE LATCHING ELEMENT HAVING PRE-DETERMINED BREAKING POINT - A filter housing has first and second housing parts connected to each other to be openable and secured by a latching element. The latching element is connected to the first housing part by a moveable connection with a predetermined breaking point and is pivotable by the movable connection into the closed state. The latching element has two positioning elements and the housing parts have counter positioning elements. In the closed state, the counter positioning elements are axially arranged between the two positioning elements and the positioning elements form a stop for the counter positioning elements. The latching element has an element locking section locking at a housing locking section on the first or second housing part. The predetermined breaking point is subjected to mechanical stress such that the predetermined breaking point breaks upon locking or release of the latching element. | 09-27-2012 |
| 20120247416 | Intake Device of an Internal Combustion Engine - An intake device of an internal combustion engine has primary and secondary intake lines for aspirating primary and secondary combustion air, respectively. The primary intake line opens into a primary inlet chamber and the secondary intake line opens into a secondary inlet chamber of a filter housing. In comparison to the primary intake line, the secondary intake line has a configuration such that, in normal engine operation, a flow capacity of the secondary intake line, in comparison to a flow capacity of the primary intake line, is so minimal that secondary combustion air aspirated through the secondary intake line has a negligible effect on the performance of the internal combustion engine. When the primary intake line is closed, the flow capacity of the secondary intake line suffices to supply the internal combustion engine with a minimum combustion air mass flow required for operating the internal combustion engine. | 10-04-2012 |
| 20120304629 | Adsorption Unit and Absorption Muffler of an Intake Manifold of an Internal Combustion Engine - An adsorption unit for combustion gas of an internal combustion engine has an adsorption housing having a chamber section with an inner wall. An adsorption element disposed in the adsorption housing is made of a gas-permeable adsorption medium that is formed to a hollow body and encloses an interior of the adsorption element. The hollow body has opposed open ends. A main flow passage extends through the hollow body and the combustion gas flows in main flow direction through the hollow body. The adsorption element has an exterior circumferential side facing away from the interior and delimiting together with the inner wall of the chamber section a bypass chamber surrounding the absorption element outwardly. In the main flow direction, the bypass chamber has a downstream end that is closed off and an upstream end that has at least one bypass opening that communicates with the main flow passage. | 12-06-2012 |
| 20150020489 | Method for producing a filter element provided with a sealing part - For a method for producing a filter element provided with a sealing part, wherein the sealing material is introduced into a casting chamber between two tundish parts when in the non-cured state, a compensation space connected to the casting chamber is provided for the expansion of the sealing material. | 01-22-2015 |
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| 20130008985 | METHOD FOR OPERATING A MILL - The rotational speed of the drum of an ore mill may be controlled variably over time. By rotating the drum during a first time interval at high speed, especially hard or dense particles are broken up by tumbling. At the same time, the discharge characteristics of the mill are adversely affected. In a subsequent second time interval, the drum is rotated at a slower speed, and the material is discharged more effectively, whereas the tumbling movement inside the mill is not achieved. The combination of said different modes of operation within short time periods in continuous operation may improve both the comminution as a result of a tumbling motion of the material and also the discharge of the ground material. By regulating the rotational speed with different target values within short time windows, different requirements for the movement behavior of the material to be ground and for the discharge characteristics of the ground material can be simultaneously optimised. This may allow a higher throughput for the mill. | 01-10-2013 |
| 20130153694 | Method for Controlling a Mill System Having at Least One Mill, in Particular an Ore Mill or Cement Mill - A method is disclosed for controlling a mill system having at least one mill, e.g., an ore mill or cement mill, wherein electrical power is drawn from a power network to rotate at least one mill body for comminuting a material fed to the at least one mill body. One or more control variables of the mill system are regulated such that the power drawn from the power network corresponds to a predetermined setpoint power draw-off for the mill system. The method may provide control power in the power network for compensating for fluctuations in energy generation due to increased use of regenerative energies. The method may be used, e.g., to regulate high energy mill systems, e.g., tube mills, SAG mills, or ball mills, such that even relatively large quantities can be made available as control power in the power network. | 06-20-2013 |
| 20130214069 | Assembly, Operating Method and Circuit for a Mill Driven by a Ring Motor - An assembly is provided for receiving characteristic data of a mill including a rotating mill sleeve having rotor coils and a stator having stator coils, wherein oscillations of the mill sleeve are transmitted to stator coils and/or measurement coils on the stator. The assembly may include stator coil(s) configured to tap power supply induction voltages to detect oscillations of the mill sleeve, wherein the stator coil(s) and/or measurement coil(s) designed to tap induction voltages are positioned in a sector of the mill sleeve in which large oscillations are expected based on the scale of the mill sleeve. Further, a method includes determining the induction voltage induced on stator coil(s) and/or measurement coil(s) by tapping at least one stator coil power supply and/or by tapping at least one measurement coil, and deriving status variable(s) of a milling method that reflect the fill level status in the sector of the respective coil. | 08-22-2013 |
| 20130248626 | Use of Temperature Measurements for Indirect Measurement of Process Variables in Milling Systems - A method is disclosed for operating a mill at continuous input and output mass flows, and to the mill, wherein a process model based on power balance equations and mass balance equations is used. Characteristic process variables can be measured in a simple manner outside the mill. Characteristic process variables which are still not known can be ascertained by means of inserting the measured values into a respective power balance equation, assuming that the other process variables are in each case known or are insignificant. On this basis, the mill can be actuated in an optimum manner in order to provide a high output power. | 09-26-2013 |
| 20140046610 | METHOD AND DEVICE FOR DETERMINING THE POWER OUTPUT BY A PHOTOVOLTAIC INSTALLATION - A method for improving the usability of photovoltaic installations (PV installations) by taking account of shading information of adjacent PV installations for forecasting the power output by a relevant PV installation is provided. In particular, cloud movements and cloud shapes are taken into account. This improves the accuracy of the forecast. Here, it is advantageous that short-term forecasts in relation to e.g. the next 15 minutes are possible and a substitute energy source can be activated accordingly, in good time, prior to a dip in the power output by the PV installation. The invention can be used e.g. in the field of renewable energies, PV installations or smart grids. | 02-13-2014 |
| 20150033758 | COMBINED HEAT AND POWER PLANT AND METHOD FOR OPERATION THEREOF - Electrical and thermal energy is generated for at least one load by a combined heat and power plant, wherein the retrieved heat output is increased when a threshold value for a difference between a provided and retrieved heat output is exceeded. | 02-05-2015 |
| 20150145332 | Method and apparatus for regulating a voltage in a distribution system - A method for the closed-loop control of a voltage in a distribution network that supplies nodes with voltage via mains power lines. A node, which recognizes that the local voltage of the distribution network present at the node lies above or below a permissible supply voltage range, switches from slave mode to master mode and in the master mode regulates the local voltage that is present, by drawing or supplying reactive power in order to reach the permissible supply voltage range. The node then indicates this to other nodes of the distribution network that are in slave mode by modulating an indication signal pattern onto the reactive power being drawn or supplied by the node. The signal pattern has a signal parameter which is proportional to the amplitude of the reactive power that is drawn or supplied by the node. | 05-28-2015 |
| 20150286973 | MULTI-MODAL NETWORK AND METHOD FOR DISTRIBUTING RESOURCES IN A MULTI-MODAL NETWORK - A network with a plurality of subnetworks has at least two subnetworks each distributing different resources. The resources of each of the subnetworks are selected from fossil fuel, electrical energy, water, heat and cold. The subnetworks have a plurality of resource processing units, at least a portion of which are transforming units that couple the subnetworks together and transform the resources of one or more subnetworks into one or more other resources of one or more other subnetworks. At least a portion of the resource processing units are resource consumption units and/or resource provision units. At least one agent is assigned to each of the resource processing units and the agents are networked together in such a manner that each agent is able to communicate with other agents in the network. The resources are distributed in the network at least partially based on monetary transactions negotiated between the agents. | 10-08-2015 |
| 20150340865 | Power control - A novel power allocation method, as early as in the procurement of electricity, takes account of network congestion and simultaneously enables logical and physical separation of network control and power allocation. An allocation component and a network monitoring component separately from one another detect tasks relating to the allocation of power and via predetermined interfaces exchange information or intermediate states relating to the allocation before the allocation is actually implemented for power control. This enables adaptive power control of power sources and consumer units and the flexible implementation of a plurality of requirements of a modern power distribution network. | 11-26-2015 |
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| 20130203245 | METHODS FOR PFET FABRICATION USING APM SOLUTIONS - A method for fabricating an integrated circuit from a semiconductor substrate having formed thereon over a first portion of the semiconductor substrate a hard mask layer and having formed thereon over a second portion of the semiconductor substrate an oxide layer. The first portion and the second portion are electrically isolated by a shallow trench isolation feature. The method includes removing the oxide layer from over the second portion and recessing the surface region of the second portion by applying an ammonia-hydrogen peroxide-water (APM) solution to form a recessed surface region. The APM solution is provided in a concentration of ammonium to hydrogen peroxide ranging from about 1:1 to about 1:0.001 and in a concentration of ammonium to water ranging from about 1:1 to about 1:20. The method further includes epitaxially growing a silicon-germanium (SiGe) layer on the recessed surface region. | 08-08-2013 |
| 20140179112 | High Productivity Combinatorial Techniques for Titanium Nitride Etching - Provided are methods of High Productivity Combinatorial testing of semiconductor substrates, each including multiple site isolated regions. Each site isolated region includes a titanium nitride structure as well as a hafnium oxide structure and/or a polysilicon structure. Each site isolated region is exposed to an etching solution that includes sulfuric acid, hydrogen peroxide, and hydrogen fluoride. The composition of the etching solution and/or etching conditions are varied among the site isolated regions to study effects of this variation on the etching selectivity of titanium nitride relative to hafnium oxide and/or polysilicon and on the etching rates. The concentration of sulfuric acid and/or hydrogen peroxide in the etching solution may be less than 7% by volume each, while the concentration of hydrogen fluoride may be between 50 ppm and 200 ppm. In some embodiments, the temperature of the etching solution is maintained at between about 40° C. and 60° C. | 06-26-2014 |
| 20140187041 | High Dose Ion-Implanted Photoresist Removal Using Organic Solvent and Transition Metal Mixtures - Provided are methods for processing semiconductor substrates to remove high-dose ion implanted (HDI) photoresist structures without damaging other structures made of titanium nitride, tantalum nitride, hafnium oxide, and/or hafnium silicon oxide. The removal is performed using a mixture of an organic solvent, an oxidant, a metal-based catalyst, and one of a base or an acid. Some examples of suitable organic solvents include dimethyl sulfoxide, n-ethyl pyrrolidone, monomethyl ether, and ethyl lactate. Transition metals in their zero-oxidation state, such as metallic iron or metallic chromium, may be used as catalysts in this mixture. In some embodiments, a mixture includes ethyl lactate, of tetra-methyl ammonium hydroxide, and less than 1% by weight of the metal-based catalyst. The etching rate of the HDI photoresist may be at least about 100 Angstroms per minute, while other structures may remain substantially intact. | 07-03-2014 |
| 20140248770 | MICROWAVE-ASSISTED HEATING OF STRONG ACID SOLUTION TO REMOVE NICKEL PLATINUM/PLATINUM RESIDUES - A method is provided for removing residual Ni/Pt and/or Pt from a semiconductor substrate in a post salicidation cleaning process using microwave heating of a stripping solution. Embodiments include depositing a Ni/Pt layer on a semiconductor substrate; annealing the deposited Ni/Pt layer, forming a nickel/platinum silicide and residual Ni/Pt and/or Pt; removing the residual Ni/Pt and/or Pt from the semiconductor substrate by: microwave heating a strong acid solution in a non-reactive container; exposing the residual Ni/Pt and/or Pt to the microwave heated strong acid solution; and rinsing the semiconductor substrate with water H | 09-04-2014 |
| 20150031179 | METHOD OF FORMING A SEMICONDUCTOR STRUCTURE INCLUDING SILICIDED AND NON-SILICIDED CIRCUIT ELEMENTS - A method includes providing a semiconductor structure including at least one first circuit element including a first semiconductor material and at least one second circuit element including a second semiconductor material. A dielectric layer having an intrinsic stress is formed that includes a first portion over the at least one first circuit element and a second portion over the at least one second circuit element. A first annealing process is performed, wherein an intrinsic stress is created at least in the first semiconductor material by stress memorization, and thereafter the first portion of the dielectric layer is removed. A layer of a metal is formed, and a second annealing process is performed, wherein the metal and the first semiconductor material react chemically to form a silicide. The second portion of the dielectric layer substantially prevents a chemical reaction between the second semiconductor material and the metal. | 01-29-2015 |
