Patent application number | Description | Published |
20090017606 | Method for Producing a Semiconductor Component Having Regions Which are Doped to Different Extents - A method for producing a semiconductor component, in particular a solar cell, having regions which are doped to different extents. A layer is formed which inhibits the diffusion of a dopant and can be penetrated by a dopant, on at least one part of the surface of a semiconductor component material. The diffusion-inhibiting layer is at least partially removed in at least one high-doping region. A dopant source is formed on the diffusion-inhibiting layer and in the at least one high-doping region. Then the dopant is diffused from the dopant source into the semiconductor component material. The semiconductor component is suitable for use in integrated circuits, electronic circuits, solar cell modules, and to produce solar cells having a selective emitter structure. | 01-15-2009 |
20090039513 | Contacting Method for Semiconductor Material and Semiconductor Device - A contact-making method for a semiconductor material contains the method steps of forming a diffusion barrier which promotes electrical contact and adhesion on at least one portion of a surface of a semiconductor and forming a metallization on the diffusion barrier. The diffusion barrier being formed by applying a metalliforous paste to at least one portion of the semiconductor surface or to at least one portion of a layer covering the semiconductor surface, and a semiconductor component with a diffusion barrier which is arranged in the surface of the semiconductor and which promotes electrical contact between the semiconductor material and a metallization. The metallization is applied to the diffusion barrier. The diffusion barrier is formed by a sintered metalliforous paste applied to at least one portion of the semiconductor surface. | 02-12-2009 |
20090246969 | METHOD FOR TEXTURING SILICON WAFERS FOR PRODUCING SOLAR CELLS - In a method for texturing silicon wafers for producing solar cells, the step of introducing a silicon wafer involves the use of a texturing solution which is at a temperature of at least 80 degrees Celsius and which comprises water admixed with 1 percent by weight to 6 percent by weight KOH or 2 percent by weight to 8 percent by weight NaOH and with a surfactant or a surfactant mixture constituting less than 0.01 percent by weight. Very economic texturing can be performed in this way. | 10-01-2009 |
20100120248 | ETCHING SOLUTION AND ETCHING METHOD - An etching solution contains water, nitric acid, hydrofluoric acid, and sulphuric acid. More specifically it contains 15 to 40% by weight of nitric acid, 10 to 41% by weight of sulphuric acid and 0.8 to 2.0% by weight of hydrofluoric acid. The etching solution is used for etching silicon and to etching methods for silicon wafers. | 05-13-2010 |
20100243036 | Method for Fabricating a Photovolataic Element with Stabilised Efficiency - A method for fabricating a photovoltaic element with stabilised efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilisation treatment step. The stabilisation treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilisation treatment step. | 09-30-2010 |
20110162716 | DEVICE FOR FABRICATING A PHOTOVOLTAIC ELEMENT WITH STABILISED EFFICIENCY - A method and device for fabricating a photovoltaic element with stabilized efficiency is proposed. The method comprises the following steps: preparing a boron-doped, oxygen-containing silicon substrate; forming an emitter layer on a surface of the silicon substrate; and a stabilization treatment step. The stabilization treatment step comprises keeping the temperature of the substrate during a treatment time within a selectable temperature range having a lower temperature limit of 50° C., preferably 90° C., more preferably 130° C. and even more preferably 160° C. and an upper temperature limit of 230° C., preferably 210° C., more preferably 190° C. and even more preferably 180° C., and generating excess minority carriers in the silicon substrate during the treatment time, for example, by illuminating the substrate or by applying an external voltage. This method can be used to fabricate a photovoltaic element, e.g. a solar cell or a solar module having an efficiency which is stable at a value higher than that of photovoltaic elements fabricated without the stabilization treatment step. | 07-07-2011 |
20110260097 | ADDITIVE FOR ALKALINE ETCHING SOLUTIONS, IN PARTICULAR FOR TEXTURE ETCHING SOLUTIONS, AND PROCESS FOR PRODUCING IT - A product is obtained by mixing at least one polyethylene glycol with a base, allowing the mixture to rest in ambient air and at a temperature of approximately 25 degrees Celsius to form two phases, and separating the less dense phase representing the product. The product is used as an additive to etching solutions. | 10-27-2011 |
20120160320 | AQUEOUS ACIDIC ETCHING SOLUTION AND METHOD FOR TEXTURING THE SURFACE OF SINGLE CRYSTAL AND POLYCRYSTAL SILICON SUBSTRATES - An aqueous acidic etching solution suitable for texturing the surface of single crystal and polycrystal silicon substrates and containing, based on the complete weight of the solution, 3 to 10% by weight of hydrofluoric acid; 10 to 35% by weight of nitric acid; 5 to 40% by weight of sulfuric acid; and 55 to 82% by weight of water; a method for texturing the surface of single crystal and polycrystal silicon substrates comprising the step of (1) contacting at least one major surface of a substrate with the said aqueous acidic etching solution; (2) etching the at least one major surface of the substrate for a time and at a temperature sufficient to obtain a surface texture consisting of recesses and protrusions; and (3) removing the at least one major surface of the substrate from the contact with the aqueous acidic etching solution; and a method for manufacturing photovoltaic cells and solar cells using the said solution and the said texturing method. | 06-28-2012 |
Patent application number | Description | Published |
20080225264 | Fiber Optic Flow Sensing Device and Method - The invention provides an optical flow meter for measuring fluid flow through a pipe which obviates the need for the flow to be seeded with foreign particles. The meter comprises a fiber optic Sagnac interferometer with optical path crossing the flowing fluid. The interferometer measures velocity of the fluid by measuring the phase difference between the two beams propagating in the optical path in opposite directions. Light, which is deflected by the fluid, is collected by optical means at both sides of the optical path for calculation, the scintillating statistics and compensation for light intensity. | 09-18-2008 |
20080231860 | Optical Device and Method for Sensing Multiphase Flow - A method for measuring the velocity of a multiphase fluid flowing in a pipe. The method comprises directing at least two collimated beams of light from an illuminator through the multiphase fluid by transparent portions of the pipe. The at least two collimated beams are spaced apart in a direction of flow of the multiphase fluid by a predetermined distance. The method also includes detecting scattered, deflected and attenuated light with at least two photodetectors to produce at least two signals. The at least two photodetectors are associated with the at least two collimated beams. The method also includes calculating a cross-correlation function between the at least two signals to determine a time delay between the signals and calculating the average velocity of the multiphase fluid by taking the ratio of the predetermined distance to the time delay. | 09-25-2008 |
20090323048 | OPTICAL TRANSIT TIME VELOCIMETER - An L2F velocimeter comprises a probe for insertion into a fluid, the probe having an open area therein to allow the fluid to pass through. The probe comprises an illumination system to direct a pair of light beams, separated by a distance, through the open area, and a collection system to collect forward scattered light scattered from particles in the fluid. The collection system has an optical axis in common with the illumination system. The velocimeter further comprises an electro optical assembly connected to the probe to provide light to the illumination system, to receive light collected from the collection system, to measure a lapse time in fluctuations of the forward scattered light created by particles passing through the pair of light beams and to calculate the velocity of the fluid based on the lapse time and the separation distance. | 12-31-2009 |
20100211003 | High Precision Infusion Pumps - A system architecture for closed loop control of infusion devices is described. The architecture provides means to control the flow from an infusion device as well as in some embodiments the pressure of the delivery. A variety of infusion systems are described that use the closed loop control architecture. In some embodiments the closed loop control may be adapted to current commonly used infusion means such as a gravity feed intravenous system. Other embodiments describe infusion pump system that use biasing or drive mechanisms of springs, elastomers, rotary and linear motors. | 08-19-2010 |
20100235117 | Optical Gas Flow Meter - The invention provides an optical gas flow meter for measuring very low gas flow in a pipe. The meter comprises an optical system which transilluminates the pipe with plurality of parallel, collimated optical beams. The beams are deflected due to changes refractive index which is caused by a heater located in the pipe parallel to the beams. Deflected beams then pass through spatial filters and are detected by photodetectors. Stochastic signals from the photodetectors are further processed and gas velocity is calculated from cross-correlation function and known beam spacing. Multiple heaters allow the measurement of gas velocity at multiple points throughout the pipe. | 09-16-2010 |
Patent application number | Description | Published |
20120220721 | Method for Native Ligation of Polypeptides - The invention mainly relates to a method for manufacturing a polypeptide of formula: | 08-30-2012 |
20130203629 | METHOD FOR FUNCTIONALIZING SURFACES FOR ANALYTE DETECTION - The invention relates to a device for detecting analytes, including a plastic substrate at least partially covered by bonding polymers attached to the substrate in a non-covalent manner, said bonding polymers comprising a polysaccharide backbone provided with aromatic groupings and carboxylic acid groupings. | 08-08-2013 |
20130331545 | Method For Preparing Peptides By Assembling Multiple Peptide Fragments - Method for preparing a peptide assembly of n fragments and n−1 amino acids bearing a thiol function, represented by the formula: | 12-12-2013 |
20140256879 | METHOD FOR SYNTHESIZING PROTEINS - Method for assembling proteins from peptide fragments. It allows the production of proteins in a manner that is simple, reliable and applicable on an industrial scale. This method allows the production of proteins of therapeutic or diagnostic interest. Kits for applying this synthesis method as well as test and/or diagnostic kits are also described. | 09-11-2014 |
20150045506 | NATIVE LIGATION PROCESS - A method for producing a polypeptide, includes at least one native ligation step using a peptide functionalized with a selenium group. The selenium peptides and compounds are also described. | 02-12-2015 |