Patent application number | Description | Published |
20100052178 | Semiconductor Device and Method for Making Same - One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the conductive layer and laterally extending beyond the sidewall of the conductive layer by a lateral overhang; and a conductive via in electrical contact with the conductive capping layer. | 03-04-2010 |
20100058876 | SEMICONDUCTOR DEVICE INCLUDING A PRESSURE SENSOR - A semiconductor device includes a first cavity within a semiconductor substrate and a second cavity within the semiconductor substrate. The second cavity is open to an atmosphere and defines a first lamella between the first cavity and the second cavity. The semiconductor device includes a first sense element configured for sensing a pressure on the first lamella. | 03-11-2010 |
20100186511 | ACCELERATION SENSOR - A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element and a complementary metal-oxide-semiconductor (CMOS) circuit formed on the substrate. | 07-29-2010 |
20110163395 | Pressure Sensor and Method - A method for providing a pressure sensor substrate comprises creating a first cavity that extends inside the substrate in a first direction perpendicular to a main surface of the substrate, and that extends inside the substrate, in a second direction perpendicular to the first direction, into a first venting area of the substrate; creating a second cavity that extends in the first direction inside the substrate, that extends in parallel to the first cavity in the second direction, and that does not extend into the first venting area; and opening the first cavity in the first venting area. | 07-07-2011 |
20120080795 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MAKING SAME - One or more embodiments relate to a method for forming a semiconductor structure, comprising: providing a workpiece; forming a dielectric barrier layer over the workpiece; forming an opening through the dielectric barrier layer; forming a seed layer over the dielectric barrier layer and within the dielectric barrier layer opening; and electroplating a first fill layer on the seed layer. | 04-05-2012 |
20120267694 | INTEGRATED CIRCUIT ARRANGEMENTS - An integrated circuit arrangement is provided, including a transistor including a gate region; and a wavelength conversion element, wherein the wavelength conversion element may include the same material or same materials as the gate region of the transistor. | 10-25-2012 |
20130001712 | ACCELERATION SENSOR - A semiconductor device includes a semiconductor substrate and a semiconductor mass element configured to move in response to an applied acceleration. The mass element is defined by trenches etched into the semiconductor substrate and a cavity below the mass element. The semiconductor device includes a sensing element configured to sense movement of the mass element. | 01-03-2013 |
20130087930 | Semiconductor structure and method for making same - One or more embodiments relate to a semiconductor structure, comprising: a conductive pad, the conductive pad including a plurality of laterally spaced apart gaps diposed at least partially through the conductive pad. | 04-11-2013 |
20130200786 | Plasma Cell and Method of Manufacturing a Plasma Cell - A plasma cell and a method for making a plasma cell are disclosed. In accordance with an embodiment of the present invention, a cell comprises a semiconductor material, an opening disposed in the semiconductor material, a dielectric layer lining a surface of the opening, a cap layer closing the opening, a first electrode disposed adjacent the opening, and a second electrode disposed adjacent the opening. | 08-08-2013 |
20130228929 | Protection Layers for Conductive Pads and Methods of Formation Thereof - In one embodiment, a method of forming a semiconductor device includes forming a metal line over a substrate and depositing an alloying material layer over a top surface of the metal line. The method further includes forming a protective layer by combining the alloying material layer with the metal line. | 09-05-2013 |
20130288481 | Device and Method for Stopping Etching Process - A method for etching a layer assembly, the layer assembly including an intermediate layer sandwiched between an etch layer and a stop layer, the method including a step of etching the etch layer using a first etchant and a step of etching the intermediate layer using a second etchant. The first etchant includes a first etch selectivity of at least 5:1 with respect to the etch layer and the intermediate layer. The second etchant includes a second etch selectivity of at least 5:1 with respect to the intermediate layer and the stop layer. The first etchant being is different from the second etchant. | 10-31-2013 |
20140145281 | CONTROLLING OF PHOTO-GENERATED CHARGE CARRIERS - Embodiments related to controlling of photo-generated charge carriers are described and depicted. At least one embodiment provides a semiconductor substrate comprising a photo-conversion region to convert light into photo-generated charge carriers; a region to accumulate the photo-generated charge carriers; a control electrode structure including a plurality of control electrodes to generate a potential distribution such that the photo-generated carriers are guided towards the region to accumulate the photo-generated charge carriers based on signals applied to the control electrode structure; a non-uniform doping profile in the semiconductor substrate to generate an electric field with vertical field vector components in at least a part of the photo-conversion region | 05-29-2014 |
20140145319 | Semicondutor Packages and Methods of Fabrication Thereof - In accordance with an embodiment of the present invention, a semiconductor device includes a semiconductor chip having a first side and an opposite second side, and a chip contact pad disposed on the first side of the semiconductor chip. A dielectric liner is disposed over the semiconductor chip. The dielectric liner includes a plurality of openings over the chip contact pad. A interconnect contacts the semiconductor chip through the plurality of openings at the chip contact pad. | 05-29-2014 |
20140284663 | Method of Manufacturing an imager and imager device - Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted. | 09-25-2014 |
20140319688 | Protection Layers for Conductive Pads and Methods of Formation Thereof - In one embodiment, a method of forming a semiconductor device includes forming a metal line over a substrate and depositing an alloying material layer over a top surface of the metal line. The method further includes forming a protective layer by combining the alloying material layer with the metal line. | 10-30-2014 |
20140332759 | ELECTRODE, AN ELECTRONIC DEVICE, AND A METHOD FOR MANUFACTURING AN OPTOELECTRONIC DEVICE - According to various embodiments, an electrode may include at least one layer including a chemical compound including aluminum and titanium. | 11-13-2014 |
20150054175 | Semiconductor Device and Method for Making Same - One or more embodiments relate to a semiconductor device that includes: a conductive layer including a sidewall; a conductive capping layer disposed over the conductive layer and laterally extending beyond the sidewall of the conductive layer by a lateral overhang; and a conductive via in electrical contact with the conductive capping layer. | 02-26-2015 |