Mcfeely
Brian Mcfeely, Portland, OR US
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20110197189 | SYSTEMS AND METHODS FOR TRIGGERING SCRIPTS BASED UPON AN ALERT WITHIN A VIRTUAL INFRASTRUCTURE - Embodiments of the present disclosure provide methods and systems for triggering scripts based upon an alert within a virtual infrastructure. Other embodiments may be described and claimed. | 08-11-2011 |
20140082620 | SYSTEMS AND METHODS FOR TRIGGERING SCRIPTS BASED UPON AN ALERT WITHIN A VIRTUAL INFRASTRUCTURE - Embodiments of the present disclosure provide methods and systems for triggering scripts based upon an alert within a virtual infrastructure. Other embodiments may be described and claimed. | 03-20-2014 |
Claire W. Mcfeely, San Jose, CA US
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20120197919 | Masking Sensitive Data of Table Columns Retrieved From a Database - Access to a data element stored within a database object is controlled. A request is received from a user to perform an operation in relation to the database object, the operation including retrieval of information from the data element of the database object. Prior to retrieving information from the data element, a determination is made whether at least a portion of the information from the data element is subject to masking in accordance with an access policy. In response to determining that information from the data element is subject to masking, the request is modified to require that information from the data element be retrieved in a masked condition. | 08-02-2012 |
Dan Mcfeely, Phoenix, AZ US
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20090077105 | SYSTEM FOR DEVELOPMENT, MANAGEMENT AND OPERATION OF DISTRIBUTED CLIENTS AND SERVERS - A lightweight application server for use on portable or embedded devices includes an application manager and services containers. Each of these is managed by an admin server allowing for remote and rapid deployment and maintenance of applications, objects and features associated with the server-enabled portable or embedded devices. This permits portable devices like PDAs to provide server functionality to each other, in a fully portable network if desired. A system including such server-enabled portable or embedded devices may include, among other things, a decision flow server for facilitating distributed decision flow processing. | 03-19-2009 |
20090077175 | SYSTEM FOR DEVELOPMENT, MANAGEMENT AND OPERATION OF DISTRIBUTED CLIENTS AND SERVERS - A lightweight application server for use on portable or embedded devices includes an application manager and services containers. Each of these is managed by an admin server allowing for remote and rapid deployment and maintenance of applications, objects and features associated with the server-enabled portable or embedded devices. This permits portable devices like PDAs to provide server functionality to each other, in a fully portable network if desired. A system including such server-enabled portable or embedded devices may include, among other things, a decision flow server for facilitating distributed decision flow processing. | 03-19-2009 |
20090100166 | SYSTEM FOR DEVELOPMENT, MANAGEMENT AND OPERATION OF DISTRIBUTED CLIENTS AND SERVERS - A lightweight application server for use on portable or embedded devices includes an application manager and services containers. Each of these is managed by an admin server allowing for remote and rapid deployment and maintenance of applications, objects and features associated with the server-enabled portable or embedded devices. This permits portable devices like PDAs to provide server functionality to each other, in a fully portable network if desired. A system including such server-enabled portable or embedded devices may include, among other things, a decision flow server for facilitating distributed decision flow processing. | 04-16-2009 |
Fenton R. Mcfeely, Osaining, NY US
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20120208362 | STRUCTURE AND PROCESS FOR METALLIZATION IN HIGH ASPECT RATIO FEATURES - A high aspect ratio metallization structure is provided in which a noble metal-containing material is present at least within a lower portion of a contact opening located in a dielectric material and is in direct contact with a metal semiconductor alloy located on an upper surface of a material stack of at least one semiconductor device. In one embodiment, the noble metal-containing material is plug located within the lower region of the contact opening and an upper region of the contact opening includes a conductive metal-containing material. The conductive metal-containing material is separated from plug of noble metal-containing material by a bottom walled portion of a U-shaped diffusion barrier. In another embodiment, the noble metal-containing material is present throughout the entire contact opening. | 08-16-2012 |
Fenton R. Mcfeely, Yorktown Heights, NY US
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20110073834 | ACTIVATION OF GRAPHENE BUFFER LAYERS ON SILICON CARBIDE BY ULTRA LOW TEMPERATURE OXIDATION - A method of electrically activating a structure having one or more graphene layers formed on a silicon carbide layer includes subjecting the structure to an oxidation process so as to form a silicon oxide layer disposed between the silicon carbide layer and a bottommost of the one or more graphene layers, thereby electrically activating the bottommost graphene layer. | 03-31-2011 |
Fenton Read Mcfeely, Yorktown Heights, NY US
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20110045171 | Multi-Step Method to Selectively Deposit Ruthenium Layers of Arbitrary Thickness on Copper - Techniques for forming a ruthenium (Ru) capping layer on a copper (Cu) wire are provided. In one aspect, a method of forming a Ru capping layer on at least one exposed surface of a Cu wire embedded in a dielectric structure includes the following steps. A first Ru layer is selectively deposited onto the Cu wire and the dielectric structure by chemical vapor deposition (CVD) for a period of time during which selective nucleation of the Ru occurs on the surface of the Cu wire. Any nucleated Ru present on the dielectric structure is oxidized. The oxidized Ru and an aqueous acid are contacted to remove the oxidized Ru from the dielectric structure based on a selectivity of the aqueous acid in dissolving the oxidized Ru. A second Ru layer is selectively deposited onto the first Ru layer by CVD to produce a thicker Ru layer. The steps of oxidizing and contacting the oxidized Ru and an aqueous acid are repeated until a Ru layer having a thickness that is suitable for use as a Ru capping layer on at least one exposed surface of the Cu wire embedded in the dielectric structure is achieved. | 02-24-2011 |
20110052797 | Low Temperature Plasma-Free Method for the Nitridation of Copper - Techniques for nitridation of copper (Cu) wires. In one aspect, a method for nitridation of a Cu wire is provided. The method includes the following step. The Cu wire and trimethylsilylazide (TMSAZ) in a carrier gas are contacted at a temperature, pressure and for a length of time sufficient to form a nitridized layer on one or more surfaces of the Cu wire. The Cu wire can be part of a wiring structure and can be embedded in a dielectric media. The dielectric media can comprise an ultra low-k dielectric media. | 03-03-2011 |
Fenton Read Mcfeely, Ossining, NY US
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20120012372 | Method and Structure to Improve the Conductivity of Narrow Copper Filled Vias - Techniques for improving the conductivity of copper (Cu)-filled vias are provided. In one aspect, a method of fabricating a Cu-filled via is provided. The method includes the following steps. A via is etched in a dielectric. The via is lined with a diffusion barrier. A thin ruthenium (Ru) layer is conformally deposited onto the diffusion barrier. A thin seed Cu layer is deposited on the Ru layer. A first anneal is performed to increase a grain size of the seed Cu layer. The via is filled with additional Cu. A second anneal is performed to increase the grain size of the additional Cu. | 01-19-2012 |
20120205804 | METHOD TO FABRICATE COPPER WIRING STRUCTURES AND STRUCTURES FORMED TEHREBY - Techniques formation of high purity copper (Cu)-filled lines and vias are provided. In one aspect, a method of fabricating lines and vias filled with high purity copper with is provided. The method includes the following steps. A via is etched in a dielectric. The via is lined with a diffusion barrier. A thin ruthenium (Ru) layer is conformally deposited onto the diffusion barrier. A Cu layer is deposited on the Ru layer by a sputtering process. A reflow anneal is performed to eliminate voids in the lines and vias. | 08-16-2012 |
Mark A. Mcfeely, Monongahela, PA US
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20110197686 | Air sampling system - The system includes at least one sampler including a body having a hollow interior accessed through holes in the body and optionally a slide which can selectively cover and expose the holes in the body. A stand is provided made of a base and a floor. The base includes at least one recess therein. The recess is configured to support the sampler therein so that the sampler can be held by the stand while sampling an airspace at a particular location. The floor can be separated at least partially from the base in a removably attachable fashion to provide selective access to a hollow inside. A sampler can be placed within this hollow inside space and resealed so that the stand doubles as a shipping container for the sampler after collection of an air sample. | 08-18-2011 |
Terry L. Mcfeely, Nevada City, CA US
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20140047686 | LIQUID FUSE SOLUTIONS AND METHODS OF USE THEREOF - Compositions and methods directed to aqueous solutions containing acacia gum powder are provided herein for use in treating the textile material and for use in producing textile based art objects. | 02-20-2014 |