Patent application number | Description | Published |
20140092115 | User Interface Display Composition with Device Sensor/State Based Graphical Effects - A method comprising receiving sensor data from a sensor, obtaining image data from a graphical effects shader based on the sensor data, blending the image data with a plurality of application surfaces to create a blended image, and transmitting the blended image to a display. Also disclosed is a mobile node (MN) comprising a sensor configured to generate sensor data, a display device, and a processor coupled to the sensor and the device display, wherein the processor is configured to receive the sensor data, obtain image data generated by a graphical effects shader based on the sensor data, blend the image data with an application surface associated with a plurality of applications to create a blended image, and transmit the blended image to the display. | 04-03-2014 |
20140267437 | Lens Touch Graphic Effect For Mobile Devices - A method for content displaying implemented by a mobile device that comprises a display, the method comprising detecting a user touch on the display via a graphical user interface, generating a lens animation effect in a region of content based on the user touch, wherein the lens animation effect at least magnifies the region of content shown on the display, and displaying the lens animation effect on the display adjacent to a location of the user touch. | 09-18-2014 |
20140267868 | Camera Augmented Reality Based Activity History Tracking - Augmented reality can be used to display previously captured images on a viewfinder of a camera as the camera's active position nears a position from which the picture was originally taken. A histogram file may associate the original image with positional information of the camera when the image was captured. When the cameras active position nears those coordinates, a transparent version of the digital image is displayed on the viewfinder of the camera. The positional information may include a spatial location of the camera (e.g., GPS coordinates, etc.) as well as an orientation of the camera (e.g., yaw, pitch, roll, etc.). Augmented reality can be used to guide the user to configure/re-configure the camera in order to correct (or avoid) an image quality issue/defect when re-taking a picture. | 09-18-2014 |
20140270186 | Method And Apparatus For Using Spatial Audio Rendering For A Parallel Playback Of Call Audio And Multimedia Content - Dynamic audio rendering can be achieved by modifying the amplitude, phase, and frequency of audio signal components by varying degrees based on characteristics of the audio signal. A rendered audio signal can be produced by scaling the amplitude of an audio signal component by an amount that is dynamically selected according to the audio signal characteristics. A rendered audio signal can also be produced by adjusting/shifting a phase and/or frequency of an audio signal component by an amount that is dynamically selected according to the audio signal characteristics. The audio signal characteristics may correspond to any metric or quality associated with the audio signal, such as an energy ratio of the audio signal in the time domain, a bit-depth, or sampling rate. | 09-18-2014 |
20150098000 | System and Method for Dynamic Image Composition Guidance in Digital Camera - Embodiments are provided for dynamic image composition guidance in digital cameras. The dynamic image composition guidance allows users, for example, amateurs or less experienced photographers, to effectively and properly use photographic composition techniques for improving the quality of digitally captured images. A guidance method on a camera device determines a geometric strength point according to an image composition rule for a scene captured on the camera device. A user of the camera device is then guided in real-time while moving the camera device to align an object of the scene with the geometric strength point before recapturing the scene on the camera device. The method includes displaying, with the geometric strength point, changes to the scene including a moving point associated with a focused object on the first image according to movements of the camera device in real-time. | 04-09-2015 |
Patent application number | Description | Published |
20090177849 | SYSTEM AND METHODS FOR MEMORY EXPANSION - This document discusses, among other things, an example system and methods for memory expansion. An example embodiment includes receiving a memory request from a memory controller over a channel. Based on the memory request, the example embodiment includes selecting a location in memory to couple to a sub-channel of the channel and configuring the set of field effect transistors to couple the channel with the sub-channel. In the example embodiment, data may be allowed to flow between the memory controller and the location in the memory over the channel and the sub-channel. | 07-09-2009 |
20090177853 | SYSTEM AND METHODS FOR MEMORY EXPANSION - This document discusses, among other things, an example system and methods for memory expansion. An example embodiment includes detecting a memory command directed to a logical rand and a number of physical ranks mapped to the logical rank. The example embodiment may also include issuing the memory command to the number of physical ranks based on determining that the memory command is to be issued to the number of physical ranks. | 07-09-2009 |
20090177861 | SYSTEM AND METHODS FOR MEMORY EXPANSION - This document discusses, among other things, an example system and methods for memory expansion. An example embodiment includes receiving first initialization data from a physical dual inline memory module (DIMM) and converting the first initialization data to second initialization data of a logical DIMM mapped to the physical DIMM. The example embodiment may further include programming a memory controller based on the second initialization data. | 07-09-2009 |
20140331095 | SYSTEM AND METHODS FOR MEMORY EXPANSION - This document discusses, among other things, an example system and methods for memory expansion. An example embodiment includes receiving a memory request from a memory controller over a channel. Based on the memory request, the example embodiment includes selecting a location in memory to couple to a sub-channel of the channel and configuring the set of field effect transistors to couple the channel with the sub-channel. In the example embodiment, data may be allowed to flow between the memory controller and the location in the memory over the channel and the sub-channel. | 11-06-2014 |
Patent application number | Description | Published |
20080251793 | JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N JUNCTIONS AND METHODS OF MAKING - A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p | 10-16-2008 |
20080290927 | Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETS) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 11-27-2008 |
20100020581 | POWER CONVERSION COMPONENTS, SYSTEMS AND METHODS - Components, systems and methods for generating variable frequency AC voltage from a DC power supply are described. The components include a fullbridge (FB) parallel load resonant (PLR) converter which operates in discontinuous conduction mode. The PLR converter includes MOSFETs in an H-bridge configuration and employs a topology which minimizes inductance. The PLR converter can be coupled to a single or poly-phase bridge for use as an inverter. The inverter can be used to produce an AC sinusoidal waveform from a low voltage, high current DC power supply. Systems and techniques for modulating the output from the PLR converter to produce an AC sinusoidal waveform having desired characteristics, including frequency and voltage, are also provided. The PLR converter can also be coupled to a rectifier for use as a DC-DC converter. | 01-28-2010 |
20100026370 | HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETS) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 02-04-2010 |
20110003456 | SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULATING EPITAXY - A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer. | 01-06-2011 |
20110121884 | HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 05-26-2011 |
20120199940 | SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS ON SEMI INSULATING EPITAXY - A method of making a semi-insulating epitaxial layer includes implanting a substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer to form a semi-insulating epitaxial layer. | 08-09-2012 |
20120214275 | OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS AND THYRISTORS - An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype. | 08-23-2012 |
20130140585 | JUNCTION BARRIER SCHOTTKY RECTIFIERS HAVING EPITAXIALLY GROWN P+-N JUNCTIONS AND METHODS OF MAKING - A junction barrier Schottky (JBS) rectifier device and a method of making the device are described. The device comprises an epitaxially grown first n-type drift layer and p-type regions forming p | 06-06-2013 |
20130265095 | HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN - A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply. | 10-10-2013 |
20130320199 | OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS AND THYRISTORS - An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype. | 12-05-2013 |
Patent application number | Description | Published |
20080203236 | CMC airfoil with thin trailing edge - An airfoil ( | 08-28-2008 |
20110110772 | Turbine Engine Components with Near Surface Cooling Channels and Methods of Making the Same - A turbine airfoil has an airfoil-shaped core and a skin extending about the outer peripheral surface of the core. The core and/or the skin are configured such that a plurality of cooling channels is formed between them. In one embodiment, the cooling channels are formed by a plurality of radially extending channels in the core. In another embodiment, the cooling channels are formed by providing a wave-shaped skin such that, when the skin is attached to the outer peripheral surface of the core, the cooling channels can be formed in the space between the outer peripheral surface of the core and each wave of the skin. Such airfoil constructions can allow the inclusion of different materials in the airfoil. Further, such constructions can allow greater flexibility in the formation of cooling channels. Moreover, such constructions can help to achieve thinner outer walls and near surface cooling of the airfoil. | 05-12-2011 |
20110217178 | TURBINE AIRFOIL HAVING OUTBOARD AND INBOARD SECTIONS - A turbine airfoil usable in a turbine engine and formed from at least an outboard section and an inboard section such that an inner end of the outboard section is attached to an outer end of the inboard section. The outboard section may be configured to provide a tip having adequate thickness and may extend radially inward from the tip with a generally constant cross-sectional area. The inboard section may be configured with a tapered cross-sectional area to support the outboard section. | 09-08-2011 |
20150247410 | TURBINE ENGINE COMPONENTS WITH NEAR SURFACE COOLING CHANNELS AND METHODS OF MAKING THE SAME - A turbine component includes an airfoil-shaped core having an outer peripheral surface. A plurality of channels is formed in the core, each opening to the outer peripheral surface. The channels extend substantially radially to be elongated in the radial direction. A first platform is attached to the core. The component also includes an airfoil-shaped non-permeable skin having a hollow interior, an inner peripheral surface and an outer peripheral surface. The skin is sized so that the core can be received in the hollow interior of the skin. A second platform is attached to the skin. The core is received in the hollow interior of the skin such that the outer peripheral surface of the core engages the inner peripheral surface of the skin such that a plurality of generally radial cooling channels are formed between the channels in the core and the inner peripheral surface of the skin. | 09-03-2015 |