Patent application number | Description | Published |
20090152618 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film, an intermediate insulating film formed on the first silicon oxide film and having a relative permittivity of not less than 7, and a second silicon oxide film formed on the intermediate insulating film. A charge trap layer is formed at least in either first or second silicon oxide film or a boundary between the first silicon oxide film and the intermediate insulating film or a boundary between the second silicon oxide film and the intermediate insulating film. | 06-18-2009 |
20090189213 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å. | 07-30-2009 |
20090242969 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor storage device including a semiconductor substrate including an upper surface having a plurality of trenches formed into the upper surface; a plurality of element isolation insulating films filled in each of the trenches so as to protrude upward from the upper surface of the semiconductor substrate, the element isolation insulating films containing an oxide material; a tunnel insulating film formed on the semiconductor substrate situated between the element isolation insulating films; a charge storing layer comprising a first nitride film and being formed on the tunnel insulating film; a block film formed across an upper surface of the charge storing layer and an upper surface of the element isolation insulating film to prevent charge transfer; a gate electrode formed on the block film; and a barrier layer containing a second nitride film formed between the element isolation insulating film and the block film. | 10-01-2009 |
20100102377 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulating layer formed on the semiconductor substrate, a plurality of charge storage layers formed on the first insulating layer, a plurality of element isolation insulating films formed between the charge storage layers respectively, a second insulating layer formed on the charge storage layers and the element isolation insulating films, the second insulating layer including a stacked structure of a first silicon nitride film, a first silicon oxide film, an intermediate insulating film having a relative dielectric constant of not less than 7 and a second silicon oxide film, and a control electrode formed on the second insulating layer. The first silicon nitride film has a nitrogen concentration of not less than 21×10 | 04-29-2010 |
20100308393 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including a semiconductor substrate having an active region isolated by an element isolation insulating film; a floating gate electrode film formed on a gate insulating film residing on the active region; an interelectrode insulating film formed above an upper surface of the element isolation insulating film and an upper surface and sidewalls of the floating gate electrode film, the interelectrode insulating film being configured by multiple film layers including a high dielectric film having a dielectric constant equal to or greater than a silicon nitride film; a control gate electrode film formed on the interelectrode insulating film; and a silicon oxide film formed between the upper surface of the floating gate electrode film and the interelectrode insulating film; wherein the high dielectric film of the interelectrode insulating film is placed in direct contact with the sidewalls of the floating gate electrode film. | 12-09-2010 |
20110133267 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE AND THE SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device includes forming a gate insulating film on a semiconductor substrate, forming a charge accumulation layer, an intermediate insulating film and a conductive layer sequentially on the gate insulating film, forming an electrode isolating trench in the conductive layer, the intermediate insulating film and the charge accumulation layer, forming a nitride film on upper and side surfaces of the conductive layer, side surfaces of the intermediate insulating film, side surfaces of the charge accumulation layer and an upper surface of the gate insulating film, removing the nitride film formed on the upper surface of the gate insulating film, and filling the electrode isolating trench with an insulating film. | 06-09-2011 |
20110204433 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile semiconductor storage device is disclosed. The nonvolatile semiconductor storage device includes a semiconductor substrate including a surface layer; an element isolation insulating film isolating the surface layer of the semiconductor device into a plurality of active regions; a first gate insulating film formed above the active regions; a charge storing layer formed above the first gate insulating film and including a silicon layer containing an upper layer selectively doped with carbon; a second gate insulating film formed above the charge storing layer; and a control gate electrode formed above the second gate insulating film. | 08-25-2011 |
20110298039 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH CHARGE STORAGE LAYER IN MEMORY CELL - A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film formed above the charge storage layer, a silicon nitride film formed on the first silicon oxide film, a metal oxide film formed on the silicon nitride film, and a nitride film formed on the metal oxide film. The metal oxide film has a relative permittivity of not less than 7. | 12-08-2011 |
20110312155 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - A nonvolatile semiconductor memory device includes a first insulating layer, charge storage layers, element isolation insulating films, and a second insulating layer formed on the charge storage layers and the element isolation insulating films and including a stacked structure of a first silicon nitride film, first silicon oxide film, intermediate insulating film and second silicon oxide film. The first silicon nitride film has a nitrogen concentration of not less than 21×10 | 12-22-2011 |
20120126299 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device is disclosed. The semiconductor device includes a semiconductor substrate; a gate insulating film formed above the semiconductor substrate; a charge storage layer formed above the gate insulating film; a multilayered interelectrode insulating film formed in a first region above an upper surface portion of the element isolation insulating film, a second region above a sidewall portion of the charge storage layer and a third region above an upper surface portion of the charge storage layer, the interelectrode insulating film including a stack of an upper silicon oxide film, a middle silicon nitride film, and a lower silicon oxide film; a control gate electrode formed above the interelectrode insulating film; wherein the middle silicon nitride film is thinner in the third region than in the second region and the upper silicon oxide film is thicker in the third region than in the second region. | 05-24-2012 |
20130069135 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes an interelectrode insulating film formed between a charge storage layer and a control electrode layer. The interelectrode insulating film is formed in a first region above an upper surface of an element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a first stack including a first silicon nitride film or a high dielectric constant film interposed between a first and a second silicon oxide film or a second stack including a second high dielectric constant film and a third silicon oxide film, and a second silicon nitride film formed between the control electrode layer and the first or the second stack. The second silicon nitride film is relatively thinner in the third region than in the first region. | 03-21-2013 |
20130069142 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes an element isolation region having an element isolation insulating film therein; an active region delineated by the element isolation region; agate insulating film formed in the active region; a charge storage layer above the gate insulating film; and an interelectrode insulating film. The interelectrode insulating film is formed in a first region above an upper surface of the element isolation insulating film, a second region along a sidewall of the charge storage layer, and a third region above an upper surface of the charge storage layer. The interelectrode insulating film includes a stack of a first silicon oxide film, a first silicon nitride film, a second silicon oxide film, and a second silicon nitride film. A control electrode layer is formed above the interelectrode insulating film. The second silicon oxide film is thinner in the first region than in the third region. | 03-21-2013 |
20140239379 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH CHARGE STORAGE LAYER IN MEMORY CELL - A nonvolatile semiconductor memory device includes a semiconductor substrate, a first insulation layer formed on the semiconductor substrate, a charge storage layer formed on the first insulation layer, a second insulation layer formed on the charge storage layer, and a control electrode formed on the second insulation layer. The second insulation layer includes a first silicon oxide film formed above the charge storage layer, a silicon nitride film formed on the first silicon oxide film, a metal oxide film formed on the silicon nitride film, and a nitride film formed on the metal oxide film. The metal oxide film has a relative permittivity of not less than 7. | 08-28-2014 |
20150228662 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH CHARGE STORAGE LAYER IN MEMORY CELL - A nonvolatile semiconductor memory device includes a semiconductor portion, a first oxygen-containing portion provided on the semiconductor portion, a silicon-containing portion provided on the first oxygen-containing portion, a first film provided on the silicon-containing portion and including a lamination of a first portion containing silicon and oxygen and a second portion containing silicon and nitrogen, a first high dielectric insulating portion provided on the first film and having an oxide-containing yttrium, hafnium or aluminum, a second oxygen-containing portion provided on the first high dielectric insulating portion, a second high dielectric insulating portion provided on the second oxygen-containing insulating portion and having an oxide-containing yttrium, hafnium or aluminum, a third oxygen-containing portion provided on the second high dielectric insulating portion, and a second film provided on the third oxygen-containing portion. | 08-13-2015 |
20150275369 | GAS SUPPLY PIPE, AND GAS TREATMENT EQUIPMENT - According to one embodiment, a gas supply pipe has a first gas pipe configured to blow a gas which has flowed from an inflow opening via first gas blow holes arranged along a longitudinal direction, and a second gas pipe provided in parallel with the first gas pipe. The second gas pipe has second gas blow holes arranged along the longitudinal direction, and allows the gas to flow in a direction opposite to the first gas pipe. | 10-01-2015 |
Patent application number | Description | Published |
20110316066 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a tunnel insulating film, a first electrode, an interelectrode insulating film and a second electrode. The tunnel insulating film is provided on the semiconductor substrate. The first electrode is provided on the tunnel insulating film. The interelectrode insulating film is provided on the first electrode. The second electrode is provided on the interelectrode insulating film. The interelectrode insulating film includes a stacked insulating layer, a charge storage layer and a block insulating layer. The charge storage layer is provided on the stacked insulating layer. The block insulating layer is provided on the charge storage layer. The stacked insulating layer includes a first insulating layer, a quantum effect layer and a second insulating layer. The quantum effect layer is provided on the first insulating layer. The second insulating layer is provided on the quantum effect layer. | 12-29-2011 |
20120299083 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode. | 11-29-2012 |
20130256780 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device comprising: a semiconductor substrate; a tunnel insulating film provided on the semiconductor substrate; a charge accumulation film having a rough interface in the charge accumulation film provided on the tunnel insulating film; a block insulating film provided on the charge accumulation film; and a gate electrode provided on the block insulating film. | 10-03-2013 |
20130320426 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor region, a tunnel insulator provided above the semiconductor region, a charge storage insulator provided above the tunnel insulator, a block insulator provided above the charge storage insulator, a control gate electrode provided above the block insulator, and an interface region including a metal element, the interface region being provided at one interface selected from between the semiconductor region and the tunnel insulator, the tunnel insulator and the charge storage insulator, the charge storage insulator and the block insulator, and the block insulator and the control gate electrode. | 12-05-2013 |
Patent application number | Description | Published |
20140035364 | FEED UNIT AND FEED SYSTEM - A feed unit includes: a power transmission coil provided to perform power transmission with use of a magnetic field; a parallel LC resonance circuit including the power transmission coil; a series LC resonance circuit; an alternating-current signal generating section supplying the parallel LC resonance circuit and the series LC resonance circuit with an alternating-current signal used to perform the power transmission; and a control section controlling the alternating-current signal generating section with use of a predetermined control signal, the control section performing frequency control of the control signal to allow a circuit current that flows upon the power transmission to become smaller. | 02-06-2014 |
20140084803 | LUMINAIRE AND OPERATION DEVICE - In an operation device, a control unit is configured to be capable of receiving at least two operation patterns. A control unit keeps a switch off for a period of length corresponding to an operation pattern detected by a detecting unit. In a luminaire, when the length of a period in which a power level detected by a detecting unit falls is included in a first time range, a control unit stops power supply to a lighting unit while maintaining power supply to a communication unit. | 03-27-2014 |
20140371398 | TWO-PACK TYPE CURABLE RESIN COMPOSITION - In the present invention, the two-pack type curable resin composition using a compound having one or more (meth)acrylic groups in the molecule enables both of prolongation of a working life and maintenance of physical properties of a cured product. Prior art had a difficulty in controlling a working life continuously; however, the present invention can easily control the working life and therefore makes it possible to be used in various conditions. Provided is a two-pack type curable resin composition, containing components (A) to (E): component (A) being a compound having one or more (meth)acrylic groups in the molecule thereof; component (B) being hydroperoxide; component (C) being at least one type of copper compound and vanadium compound; component (D) being a compound having 2 to 6 thiol groups in the molecule thereof; and component (E) being saccharin. | 12-18-2014 |
20150263531 | NON-CONTACT ELECTRIC POWER FEEDING SYSTEM, TERMINAL DEVICE, NON-CONTACT ELECTRIC POWER FEEDING DEVICE, AND NON-CONTACT ELECTRIC POWER FEEDING METHOD - Provided is a non-contact electric power feeding system including an electric power feeding device, and an electric power receiving device configured to receive electric power fed from the electric power feeding device. The electric power feeding device includes a primary-side coil, a driver, a primary-side control unit, and a primary-side communication unit. The electric power receiving device includes a secondary-side coil, a rectifier unit, a regulator, a secondary-side communication unit, and
| 09-17-2015 |
Patent application number | Description | Published |
20140070289 | FERROELECTRIC MEMORY AND MANUFACTURING METHOD THEREOF - According to one embodiment, a ferroelectric memory includes a gate insulation film formed on a semiconductor substrate, a ferroelectric film formed on the gate insulation film, and a control electrode formed on the ferroelectric film. The ferroelectric film is a film containing a metal, which is hafnium or zirconium, and oxygen, and contains an element other than the metal at a concentration lower than a concentration of the metal. | 03-13-2014 |
20140070290 | FERROELECTRIC MEMORY AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a ferroelectric memory includes a semiconductor layer, an interfacial insulating film formed on the semiconductor layer, a ferroelectric film formed on the interfacial insulating film, and a gate electrode formed on the ferroelectric film, wherein the ferroelectric film is a film which includes a metal that is hafnium (Hf) or zirconium (Zr) and oxygen as the main components and to which an element selected from the group consisting of silicon (Si), magnesium (Mg), aluminum (Al). | 03-13-2014 |
20150200307 | SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device according to the present embodiment includes a semiconductor substrate. A tunnel insulating film is provided on the semiconductor substrate. A charge accumulation layer is provided on the tunnel insulating film. An intermediate dielectric film is provided on the charge accumulation layer. A control gate electrode is formed on the intermediate dielectric film. The intermediate dielectric film includes a laminated film of silicon oxide films of multiple layers and silicon nitride films of at least one layer, and a silicon oxynitride film provided between adjacent ones of the silicon oxide films and the silicon nitride films. | 07-16-2015 |
20150255482 | SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor storage device according to an embodiment includes a semiconductor layer. A tunnel dielectric film is formed on the semiconductor layer. A charge accumulation layer is formed on the tunnel dielectric film. A block film is formed on the charge accumulation layer. A control gate is formed on the block film. The block film includes a metal oxide film containing nitrogen in a concentration range equal to or lower than | 09-10-2015 |
Patent application number | Description | Published |
20130240972 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - An aspect of the present embodiment, there is provided a semiconductor device, including a semiconductor substrate, a first insulator above the semiconductor substrate, the first insulator containing tungsten, germanium and silicon, a charge storage film on the first insulator, a second insulator on the charge storage film and, a control gate electrode on the second insulator. | 09-19-2013 |
20130256779 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device comprising: forming a first insulating film on a semiconductor substrate; forming an adsorption film on the first insulating film; forming a first film containing germanium on the adsorption film; forming a second insulating film on the first film; forming a floating electrode film on the second insulating film; forming a third insulating film on the floating electrode film; and forming a gate electrode on the third insulating film. | 10-03-2013 |
20140061756 | NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE - A non-volatile semiconductor storage device disclosed in the embodiment has a semiconductor substrate, a first insulating film, a first charge storage film, a second insulating film, a second charge storage film, a third insulating film, and a control electrode. In this non-volatile semiconductor storage device, the first and second charge storage films comprise a metallic material, a semi-metallic material or a semiconductor material. One of the first, second, and third insulating films is a multi-layered insulating film formed by layering multiple insulating films. This non-volatile semiconductor storage device further has a film comprising of any one of an oxide film, nitride film, boride film, sulfide film, and carbide film that is in contact with one interface of the laminated insulating film and contains one type of atom selected from aluminum, boron, alkaline earth metal, and transition metal at a concentration in the range of 1E12 atoms/cm | 03-06-2014 |