Patent application number | Description | Published |
20090014839 | Nitride-Based Semiconductor Device - A nitride-based semiconductor device includes: an n-GaN layer | 01-15-2009 |
20090166608 | Light emitting semiconductor device and fabrication method for the light emitting semiconductor device - A semiconductor light emitting device and a fabrication method for the semiconductor light emitting device whose outward luminous efficiency improved are provided and the semiconductor light emitting device includes a substrate; a protective film placed on the substrate; an n-type semiconductor layer which is placed on the substrate pinched by a protective film and on the protective film, and is doped with an n-type impurity; an active layer placed on the n-type semiconductor layer, and a p-type semiconductor layer placed on the active layer and is doped with a p-type impurity. | 07-02-2009 |
20090272992 | Semiconductor Light-Emitting Device and Process for Producing the Same - A semiconductor light emitting device of the present invention includes a substrate ( | 11-05-2009 |
20100019257 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - There are provided a nitride semiconductor light emitting device having a structure enabling enhanced external quantum efficiency by effectively taking out light which is apt to repeat total reflection within a semiconductor lamination portion and a substrate and attenuate, and a method for manufacturing the same. A semiconductor lamination portion ( | 01-28-2010 |
20100133506 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR - Provided are a nitride semiconductor light emitting element having a nitride semiconductor layered on an AlN buffer layer with improved qualities such as crystal quality and with improved light emission output, and a method of manufacturing a nitride semiconductor. An AlN buffer layer ( | 06-03-2010 |
Patent application number | Description | Published |
20080258166 | Semiconductor Light Emitting Device and Method for Manufacturing the Same - There is provided a semiconductor light emitting semiconductor device including an n-side electrode which has a structure capable of stably suppressing the contact resistance between the n-side electrode and a nitride semiconductor layer. Further, there is provided a light emitting device and a manufacturing method wherein an ohmic contact between the n-side electrode and the nitride semiconductor layer can be obtained by a simple manufacturing process, and the n-side electrode has an Au layer on a top surface to facilitate wire bonding. Semiconductor layers ( | 10-23-2008 |
20090121240 | Nitride Semiconductor Device and Method for Manufacturing the Same - There is provided a nitride semiconductor device with low leakage current and high efficiency in which, while a zinc oxide based compound such as Mg | 05-14-2009 |
20090127572 | Nitride Semiconductor Light Emitting Device - There is provided a nitride semiconductor light emitting device capable of inhibiting output deterioration of light emission caused by quality deterioration of a nitride semiconductor layer due to lattice-mismatching between a substrate and the nitride semiconductor layer, and utilizing light traveling to the substrate efficiently, while forming a light emitting device of a vertical type which has one electrode on a back surface of the substrate by using the substrate made of SiC. A light reflecting layer ( | 05-21-2009 |
20090206357 | Semiconductor Light Emitting Device - There is provided a nitride semiconductor light emitting device in which a semiconductor layer is not broken easily even when a reverse voltage is applied or even in long time operation, and excellent reliability is obtained, by preventing semiconductor layers from deterioration when manufacturing a device. On a surface of a substrate ( | 08-20-2009 |
20090278144 | Nitride Semiconductor Light Emitting Device - There is provided a nitride semiconductor light emitting device having a light reflection layer capable of preventing reflectivity from lowering and luminance from lowering due to deterioration of quality of an active layer. A nitride semiconductor laser includes at least a light emitting layer forming portion ( | 11-12-2009 |