Patent application number | Description | Published |
20090253355 | CMP ABRASIVE, METHOD FOR POLISHING SUBSTRATE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR CMP ABRASIVE - The present invention discloses a CMP abrasive comprising cerium oxide particles, a dispersant, an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished and water, a method for polishing a substrate comprising polishing a film to be polished by moving a substrate on which the film to be polished is formed and a polishing platen while pressing the substrate against the polishing platen and a polishing cloth and supplying the CMP abrasive between the film to be polished and the polishing cloth, a method for manufacturing a semiconductor device comprising the steps of the above-mentioned polishing method, and an additive for a CMP abrasive comprising an organic polymer having an atom or a structure capable of forming a hydrogen bond with a hydroxyl group present on a surface of a film to be polished, and water. | 10-08-2009 |
20110028073 | CMP POLISHING SLURRY AND POLISHING METHOD - The present invention relates to a CMP polishing slurry, comprising cerium oxide particles, a dispersing agent, water-soluble polymer and water, wherein the water-soluble polymer is a compound having a skeleton of any one of an N-mono-substituted product and an N,N-di-substituted product of any one selected from the group consisting of acrylamide, methacrylamide and α-substituted products thereof. The amount of the water-soluble polymer is preferably in the range of 0.01 part or more by weight and 10 parts or less by weight for 100 parts by weight of the polishing slurry. Thus it is possible to provide a polishing slurry and a polishing method which make it possible to polish a film made of silicon oxide or the like effectively and rapidly and further control the process therefor easily in CMP technique for flattening an interlayer insulating film, a BPSG film, an insulator film for shallow trench isolation, and other films. | 02-03-2011 |
20110180137 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - The paste composition for an electrode are constituted with metal particles having copper as a main component, a phosphorous-containing compound, glass particles, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for an electrode. | 07-28-2011 |
20110180138 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - The paste composition for an electrode includes metal particles having copper as a main component, glass particles including diphosphorus pentoxide and divanadium pentoxide and having a content of divanadium pentoxide of 1% by mass or more, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for an electrode. | 07-28-2011 |
20110180139 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - The paste composition for an electrode of the first aspect of the present invention includes silver alloy particles, glass particles, a resin, and a solvent. The paste composition for an electrode of the second aspect of the present invention includes copper particles, silver or silver alloy particles, glass particles containing P | 07-28-2011 |
20110195540 | COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD FOR FORMING P-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment. | 08-11-2011 |
20110195541 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 08-11-2011 |
20110209751 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - The paste composition for an electrode according to the present invention includes metal particles containing copper as a main component, a flux, glass particles, a solvent, and a resin. Further, a photovoltaic cell according to the present invention has an electrode formed by using the paste composition for an electrode. | 09-01-2011 |
20110212564 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - In a method for producing a photovoltaic cell, the improvement comprising:
| 09-01-2011 |
20110256658 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - In a method for producing a photovoltaic cell, the improvement comprising:
| 10-20-2011 |
20110277831 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - The paste composition for an electrode are constituted with copper-containing particles having a peak temperature of an exothermic peak showing a maximum area in the simultaneous ThermoGravimetry/Differential Thermal Analysis of 280° C. or higher, glass particles, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for a photovoltaic cell electrode. | 11-17-2011 |
20120122263 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region. | 05-17-2012 |
20120122264 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region. | 05-17-2012 |
20120122265 | METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The method for producing a photovoltaic cell includes applying an n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium onto a first region on one surface side of a semiconductor substrate; applying a p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium onto a second region other than the first region on the surface of the semiconductor substrate where the first region is provided; a thermal diffusion process in which an n-type diffusion layer and a p-type diffusion layer are formed by heat-treating the semiconductor substrate onto which the n-type diffusion layer forming composition and the p-type diffusion layer forming composition are applied; and forming an electrode on each of the first region where the n-type diffusion layer is formed and the second region where the p-type diffusion layer is formed, respectively. | 05-17-2012 |
20120178201 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 07-12-2012 |
20120184062 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 07-19-2012 |
20120260981 | PASTE COMPOSITION FOR ELECTRODE, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL - The present invention provides a paste composition for an electrode, the paste composition including phosphorus-tin-containing copper alloy particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell. | 10-18-2012 |
20120260982 | PASTE COMPOSITION FOR ELECTRODE, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL - The present invention provides a paste composition for an electrode, the paste composition comprising phosphorus-containing copper alloy particles, tin-containing particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell. | 10-18-2012 |
20120260988 | PASTE COMPOSITION FOR ELECTRODE AND PHOTOVOLTAIC CELL - A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin. | 10-18-2012 |
20120313199 | MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME - The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group. | 12-13-2012 |
20130025668 | ELEMENT AND PHOTOVOLTAIC CELL - The invention provides an element including a semiconductor substrate and an electrode disposed on the semiconductor substrate, the electrode being a sintered product of a composition for an electrode that includes phosphorus-containing copper alloy particles, glass particles and a dispersing medium, and the electrode includes a line-shaped electrode having an aspect ratio, which is defined as electrode short length:electrode height, of from 2:1 to 250:1. | 01-31-2013 |
20130025669 | PHOTOVOLTAIC CELL SUBSTRATE, METHOD OF PRODUCING PHOTOVOLTAIC CELL SUBSTRATE, PHOTOVOLTAIC CELL ELEMENT AND PHOTOVOLTAIC CELL - The invention provides a photovoltaic cell substrate that is a semiconductor substrate comprising an n-type diffusion layer, an n | 01-31-2013 |
20130025670 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL - The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu. | 01-31-2013 |
20130042912 | SOLDER BONDED BODY, METHOD OF PRODUCING SOLDER BONDED BODY, ELEMENT, PHOTOVOLTAIC CELL, METHOD OF PRODUCING ELEMENT AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The solder bonded body according to the present invention contains: an oxide body to be bonded having an oxide layer on the surface thereof; and a solder layer bonded to the oxide layer, which the solder layer is formed by an alloy containing at least two metals selected from the group consisting of tin, copper, silver, bismuth, lead, aluminum, titanium and silicon and having a melting point of lower than 450° C. and has a zinc content of 1% by mass or less. | 02-21-2013 |
20130071968 | COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD OF FORMING P-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment. | 03-21-2013 |
20130078759 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 03-28-2013 |
20130118573 | PASTE COMPOSITION FOR ELECTRODE, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL - The present invention provides a paste composition for an electrode comprising a phosphorus-containing copper alloy particle, a tin-containing particle, a nickel-containing particle, a glass particle, a solvent, and a resin. | 05-16-2013 |
20140060385 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR FORMING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 03-06-2014 |
20140065761 | COMPOSITION FOR FORMING P-TYPE DIFFUSION LAYER, METHOD OF FORMING P-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment. | 03-06-2014 |
20140076396 | SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME, PHOTOVOLTAIC CELL ELEMENT, AND PHOTOVOLTAIC CELL - The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu. | 03-20-2014 |
20140120648 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD OF FORMING N-TYPE DIFFUSION LAYER, AND METHOD OF PRODUCING PHOTOVOLTAIC CELL - The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment. | 05-01-2014 |
20140158196 | ELEMENT AND PHOTOVOLTAIC CELL - An element of the present invention includes a silicon substrate; an electrode which is provided on the silicon substrate and which is a sintered product of a paste composition for an electrode containing a phosphorus-containing copper alloy particle, a glass particle, a solvent and a resin; and a solder layer containing a flux, which is provided on the electrode. | 06-12-2014 |
20140242741 | MATERIAL FOR FORMING PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE, PASSIVATION FILM FOR SEMICONDUCTOR SUBSTRATE AND METHOD OF PRODUCING THE SAME, AND PHOTOVOLTAIC CELL ELEMENT AND METHOD OF PRODUCING THE SAME - The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group. | 08-28-2014 |
20150017754 | COMPOSITION FOR FORMING N-TYPE DIFFUSION LAYER, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE HAVING N-TYPE DIFFUSION LAYER, AND METHOD FOR PRODUCING SOLAR CELL ELEMENT - The invention provides composition for forming an n-type diffusion layer, the composition comprising a compound containing a donor element, a dispersing medium, and an organic filler; a method for producing a semiconductor substrate having an n-type diffusion layer; and a method for producing a photovoltaic cell element. | 01-15-2015 |