Patent application number | Description | Published |
20090081838 | SEMICONDUCTOR MEMORY AND FABRICATION METHOD FOR THE SAME - A semiconductor memory includes memory cell transistors including a tunnel insulating film, a floating gate electrode, a first insulating film, a control gate electrode, and a first metal salicide film; low-voltage transistors having a first p-type source region and a first p-type drain region, a first gate insulating film, and a first gate electrode of an n conductivity type having the same dose of a first p-type impurity as with the first p-type source region; and high-voltage transistors having a second p-type source region and a second p-type drain region, a second gate insulating film thicker than the first gate insulating film, and a second gate electrode of an n conductivity type having the same dose of a second p-type impurity as with the second p-type source region. | 03-26-2009 |
20100124117 | NONVOLATILE SEMICONDUCTOR MEMORY - A memory includes a first word line which is connected to a control gate electrode of a first memory cell, a second word line which is connected to a control gate electrode of a second memory cell, a potential transfer line which is connected to both of the first and second word lines, a first N-channel MOS transistor which is connected between the first word line and the potential transfer line, and a second N-channel MOS transistor which is connected between the second word line and the potential transfer line. A control circuit supplies a first potential with a plus value to a semiconductor substrate, and supplies a second potential with the plus value lower than the first potential to the potential transfer line, to turn the first N-channel MOS transistor on, and to turn the second N-channel MOS transistor off, in erasing data of the first memory cell. | 05-20-2010 |
20100258783 | SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor memory device includes a plurality of memory cell arrays each includes a plurality of memory cells, the plurality of memory cell arrays being stacked on a semiconductor substrate to form a three-dimensional structure, a first well formed in the semiconductor substrate and having a first conductivity type, an element isolation insulating film including a bottom surface shallower than a bottom surface of the first well in the first well, and buried in the semiconductor substrate, a second well including a bottom surface shallower than the bottom surface of the first well in the first well, formed along a bottom surface of at least a portion of the element isolation insulating film, and made of an impurity having a second conductivity type, and a contact line electrically connected to the first well. | 10-14-2010 |
20100301426 | DEPLETION MOS TRANSISTOR AND ENHANCEMENT MOS TRANSISTOR - A semiconductor memory device includes a first transistor. The first transistor includes a gate electrode, a channel region, a source region, a source region, an overlapping region, a contact region, and an impurity diffusion region. The channel region has a first impurity concentration. The source and drain regions have a second impurity concentration. The overlapping region is formed in the semiconductor layer where the channel region overlaps the source region and the drain region, and has a third impurity concentration. The contact region has a fourth impurity concentration. The impurity diffusion region has a fifth impurity concentration higher than the second impurity concentration and lower than the fourth impurity concentration. The impurity diffusion region is in contact with the contact region and away from the overlapping region and positioned at least in a region between the contact region and the overlapping region. | 12-02-2010 |
20110163370 | SEMICONDUCTOR MEMORY AND FABRICATION METHOD FOR THE SAME - A semiconductor memory includes memory cell transistors including a tunnel insulating film, a floating gate electrode, a first insulating film, a control gate electrode, and a first metal salicide film; low-voltage transistors having a first p-type source region and a first p-type drain region, a first gate insulating film, and a first gate electrode of an n conductivity type having the same dose of a first p-type impurity as with the first p-type source region; and high-voltage transistors having a second p-type source region and a second p-type drain region, a second gate insulating film thicker than the first gate insulating film, and a second gate electrode of an n conductivity type having the same dose of a second p-type impurity as with the second p-type source region. | 07-07-2011 |
20110309422 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first resistance element including a first conductive material, an inter-gate insulation film formed on both ends of the first conductive material in a first direction, and a second conductive material formed above the first conductive material and configured to connect with the first conductive material via a first connection region from which the inter-gate insulation film is removed, and a second resistance element including a third conductive material, the inter-gate insulation film formed on both ends of the third conductive material in the first direction, and a fourth conductive material formed above the third conductive material and configured to connect with the third conductive material via a second connection region from which the inter-gate insulation film is removed, wherein a length of the second connection region is greater than a length of the first connection region in the first direction. | 12-22-2011 |
20120199896 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE FOR SUPPRESSING DETERIORATION IN JUNCTION BREAKDOWN VOLTAGE AND SURFACE BREAKDOWN VOLTAGE OF TRANSISTOR - According to one embodiment, a non-volatile semiconductor memory device includes a plurality of memory cells and a transistor. The transistor includes a gate insulating film, a gate electrode on the gate insulating film, a sidewall insulating film on both side surfaces of the gate electrode, a source diffusion layer corresponding to the sidewall insulating film, a first hollow formed in a position at a height less than a bottom surface of the gate insulating film directly below an outer side surface of the sidewall insulating film of another side of the gate electrode, a second hollow formed in the first hollow at a position at a height less than the first hollow, and a drain diffusion layer corresponding to another side of the gate electrode and including a low-concentration drain region formed on a bottom surface of the second hollow and a high-concentration drain region. | 08-09-2012 |
20130062680 | SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD OF THE SAME - According to one embodiment, a semiconductor memory includes a memory cell in a memory cell array which is provided in a semiconductor substrate and which includes a first active region surrounded by a first isolation insulator, a transistor in a transistor region which is provided in the semiconductor substrate and which includes second active regions surrounded by a second isolation insulator. The second isolation insulator includes a first film, and a second film between the first film and the second active region, and the upper surface of the first film is located closer to the bottom of the semiconductor substrate than the upper surface of the second film. | 03-14-2013 |
20130062682 | SEMICONDUCTOR MEMORY AND MANUFACTURING METHOD THEREOF - According to one embodiment, a semiconductor memory includes a memory cell provided in a first active area surrounded with a first isolation insulating film, a first transistor provided in a second active area surrounded with a second isolation insulating film, a shield gate electrode on the second isolation insulating film. The bottom surface of the shield gate electrode is positioned more closely to a semiconductor substrate side as compared with the highest upper surface of the second isolation insulating film. | 03-14-2013 |
20140284713 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A transfer transistor includes a pair of first diffusion regions and a gate electrode layer. The pair of first diffusion regions are formed in a surface of a semiconductor substrate, and are each connected to a contact. The gate electrode layer is formed on the semiconductor substrate via a gate insulating layer and has a pair of openings each surrounding the contact. | 09-25-2014 |
20150155291 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A transfer transistor includes a pair of first diffusion regions and a gate electrode layer. The pair of first diffusion regions are formed in a surface of a semiconductor substrate, and are each connected to a contact. The gate electrode layer is formed on the semiconductor substrate via a gate insulating layer and has a pair of openings each surrounding the contact. | 06-04-2015 |
Patent application number | Description | Published |
20080239816 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory device comprises a memory cell unit including at least one memory cell having a structure with a floating gate and a control gate stacked via an insulator on a semiconductor substrate. A common source line is connected to one end of the memory cell unit. A bit line is connected to the other end of the memory cell unit. The control gate has at least an upper portion with a width along the gate length formed wider than the width of the floating gate. | 10-02-2008 |
20090091040 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR STORAGE DEVICE - A semiconductor storage device includes a memory cell transistor and a selective transistor formed on a semiconductor substrate, a first interlayer insulating film which is formed on the semiconductor substrate, an insulating layer formed by use of a material higher in dielectric constant than the first interlayer insulating film, a contact plug which penetrates the insulating layer and the first interlayer insulating film and which is electrically connected to a drain of the selective transistor, and a bit line which is in contact with the contact plug. A partial region in the bottom surface of the bit line is located lower than the upper surface of the contact plug, and is in contact with the surface of the insulating layer, and the partial region is also in contact with the side surface of the contact plug. | 04-09-2009 |
20090194879 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a plurality of first interconnection layers which are provided in an insulating layer and formed in a pattern having a width and space smaller than a resolution limit of an exposure technique, and a second interconnection layer which is provided between the first interconnection layers in the insulating layer and has a width larger than that of a first interconnection layer. A space between the second interconnection layer and each of first interconnection layers adjacent to both sides of the second interconnection layer equals the space between the first interconnection layers. | 08-06-2009 |
20100006946 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device includes a plurality of first MOS transistors has a first gate electrode formed on a first gate insulating film provided in a first transistor region on a semiconductor substrate, a plurality of second MOS transistors has a second gate electrode formed on a second gate insulating film which is provided in a second transistor region on the semiconductor substrate and which is smaller in thickness than the first gate insulating film, a first element isolation region in the first transistor region, the first element isolation region provided between the plurality of first MOS transistors, and a second element isolation region in the second transistor region, the second element isolation region provided between the plurality of second MOS transistors. The upper surface of the second element isolation region is lower than the upper surface of the first element isolation region. | 01-14-2010 |
20100052061 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device includes a plurality of first MOS transistors has a first gate electrode formed on a first gate insulating film provided on a semiconductor substrate, a plurality of second MOS transistors has a second gate electrode formed on a second gate insulating film which is provided on the substrate and which is smaller in thickness than the first gate insulating film. A first element isolation region has a first region and a second region, a bottom surface of the second region is deeper than that of the first region by the difference of thickness between the first gate insulating film and the second gate insulating film, and a bottom surface of the first region is equal in a bottom surface of a second element isolation region. | 03-04-2010 |
20100159655 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICES - A semiconductor memory device has a floating gate formed on a semiconductor substrate at certain intervals along a plane with a first insulator interposed therebetween, and a control gate formed on the layer of floating gates with a second insulator interposed therebetween. The device includes a semiconductor layer formed by selectively epitaxially growing the semiconductor substrate between the floating gates on the semiconductor substrate with a third insulator interposed therebetween. | 06-24-2010 |
20100202208 | SEMICONDUCTOR DEVICE INCLUDING CONTACT PLUG HAVING AN ELLIPTICAL SECTIONAL SHAPE - A semiconductor device includes a first MOS transistor, second MOS transistors, first contact plugs, and a second contact plug. The first MOS transistor with a first conductivity is formed on a semiconductor substrate. The second MOS transistors with a second conductivity are formed on the semiconductor substrate. The first contact plugs has a circular planar shape. The second contact plug has an elliptical planar shape and is formed on a source or a drain in one of the second MOS transistors. The first contact plugs are formed on sources or drains in the remaining second MOS transistors and the first MOS transistor. | 08-12-2010 |
20110272755 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprising a first insulating film provided on a semiconductor substrate in a cell transistor region, a first conductive film provided on the first insulating film, an inter-electrode insulating film provided on the first conductive film, a second conductive film provided on the inter-electrode insulating film and having a first metallic silicide film on a top surface thereof, first source/drain regions formed on a surface of the semiconductor substrate, a second insulating film provided on the semiconductor substrate in at least one of a selection gate transistor region and a peripheral transistor region, a third conductive film provided on the second insulating film and having a second metallic silicide film having a thickness smaller than a thickness of the first metallic silicide film on a top surface thereof, and a second source/drain regions formed on the surface of the semiconductor substrate. | 11-10-2011 |
20110275213 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes a plurality of first interconnection layers which are provided in an insulating layer and formed in a pattern having a width and space smaller than a resolution limit of an exposure technique, and a second interconnection layer which is provided between the first interconnection layers in the insulating layer and has a width larger than that of a first interconnection layer. A space between the second interconnection layer and each of first interconnection layers adjacent to both sides of the second interconnection layer equals the space between the first interconnection layers. | 11-10-2011 |
Patent application number | Description | Published |
20120105846 | SPECTRUM MEASURING APPARATUS - Disclosed is a spectrum measuring apparatus for shortening such a measurement time period for an object being measured including two or more mutually different measurement portions as is required for the spectrum measurements of the lights from individual measurement portions. The spectrum measuring apparatus comprises a slit group having two or more slits, a spectroscope for separating the lights extracted by the slit group, for the individual slits, and a measuring unit for measuring the intensities of the individual components, which are separated by the spectroscope, for the slits. The individual slits extract such ones of the lights coming from an object being measured including two or more mutually different measurement portions, as come from the individual measurement portions. | 05-03-2012 |
20120113412 | SPECTRUM MEASURING APPARATUS FOR MOVER - Provided is a moveable spectrum measuring apparatus capable of improving discrimination precision of a measuring object on the basis of observation data from a spectrum sensor mounted on a movable apparatus such as a vehicle. A measuring object and a reference body are irradiated with ambient light. A spectrum acquiring device acquires measuring object data indicating the spectrum of the measuring object, and reference body data indicating the spectrum of the reference body to become a reference at the time when the spectrum of the measuring object is corrected. A spectrum converting device has reference body reflectivity data indicating the surface reflectivity of the reference body, and creates ambient light data indicating the spectrum of the ambient light, on the basis of the reference body reflectivity data and the reference body data. By using the ambient light data, the measuring object data is converted into measuring object reflectivity data indicating the surface reflectivity of the measuring object. On the basis of the measuring object reflectivity data, a discrimination device discriminates the measuring object. | 05-10-2012 |
20120113425 | SPECTRUM MEASURING APPARATUS FOR MOVER - Provided is a movable body spectrum measuring apparatus, which can discriminate a measuring object with high precision by photographic data from a spectrum sensor mounted on a movable body such as a vehicle and can process the photographic data in real time. A movable body spectrum measuring apparatus discriminates the measuring object around a vehicle on the basis of the spectrum data from an observation light. A spectrum sensor can measure wavelength information and light intensity information. The movable body spectrum measuring apparatus comprises a dictionary data storing unit storing, as dictionary data, the spectrum data containing the wavelength information and the light intensity information regarding a plurality of predetermined measuring objects, and an arithmetic device for discriminating the measuring object on the basis of comparison computation to compare the spectrum data of the observation light and the spectrum data stored in the dictionary data storing unit. The arithmetic device performs the computation to compare the spectrum data of the observation light with reference to only a partial wavelength band of the spectrum data stored as the dictionary data. | 05-10-2012 |
20120123637 | SPECTRUM MEASURING APPARATUS FOR MOVER - Disclosed is a mover spectrum measuring apparatus, which is able to discriminate an object being measured more reliably by relieving the influences of an environmental light on photographic data by a spectrum sensor mounted on a mover such as a vehicle. A spectrum sensor capable of measuring wavelength information and optical intensity information is mounted on a vehicle, so that an object being measured around the vehicle is discriminated on the basis of the spectrum data relating to the observation light detected by the spectrum sensor. The mover spectrum measuring apparatus comprises an illumination device for making variable the featuring quantity of at least either the wavelength range of the observation light or the optical intensity of each wavelength, and controls the featuring quantity varying mode by the illumination device through an illumination controller on the basis of the control value according to an environmental element. | 05-17-2012 |
20120143395 | DRIVE SUPPORTING DEVICE - A drive supporting device includes a GPS, a front camera, and a communication device that acquire traffic signal information related to the time-series on/off state of a traffic signal and an ECU that supports the driving of a vehicle on the basis of the traffic signal information acquired by, for example, the communication device. The ECU changes a driver support aspect on the basis of the level of proficiency of the driver of the vehicle in a region in which the vehicle is currently located. In this way, even when the driver is in a strange place, it is possible to appropriately support the driving of the vehicle. | 06-07-2012 |
20120188545 | SPECTRUM MEASURING APPARATUS FOR MOVER - Disclosed is a movable body spectrum measuring apparatus, which is capable of discriminating an object being measured highly precisely by the photographic data regarding a spectrum sensor and is capable of processing the photographic data in real time. The movable body spectrum measuring apparatus discriminates the object being measured based on the spectrum data relating to the observation light detected by a spectrum sensor. The movable body spectrum measuring apparatus comprises a dictionary data storing unit for storing the spectrum data containing the wavelength information and the light intensity information of the object being measured, and a limitation information storing unit for storing limitation information to regulate the wavelength information into partial wavelength information. The movable body spectrum measuring apparatus further comprises a discrimination level setting unit for setting selectively the limitation information corresponding to the discrimination level required of the object being measured, a restricting unit for restricting the spectrum data regarding the observation light to the spectrum data composed exclusively of the wavelength information limited by the limitation information, and a discrimination unit for discriminating the object being measured based on the comparison between the restricted spectrum data and the spectrum data regarding the dictionary data storing unit. | 07-26-2012 |
Patent application number | Description | Published |
20140163854 | DRIVE ASSIST APPARATUS - An electronic control unit of a drive assist apparatus acquires electric power source identification information for identifying a source of an electric power currently charged in a battery and electric power amount information representing an electric power amount corresponding to the source from an electric power acquisition unit, thereby recognizing a battery remaining amount SOCrg representing a green electric power, a battery remaining amount SOCj representing a privately generated green electric power, and a battery remaining amount SOCrs representing a non-green electric power. The unit presents travelable ranges each formed by connecting a group of maximum reachable points to which a PHV can reach by using each of a battery total remaining amount SOCr and the battery remaining amounts SOCrg, SOCj, and SOCrs to a user (driver) by using an information presentation unit. | 06-12-2014 |
20140214321 | CHARGING INFORMATION-PROVIDING APPARATUS - An information providing apparatus is configured so as to provide, to an occupant of an electric vehicle, information indicating a location of a charging station together with information indicating whether or not the electric vehicle can be charged with a clean electric power at that charging station, through an on-board display. Accordingly, the occupant of the electric vehicle can go to the charging station at which the electric vehicle can be charged with electric power including the clean electric power, based on the provided location information of the charging station and a clean degree, and can charge the electric vehicle with the electric power including the clean electric power there. In this manner, the electric vehicle is charged with the electric power including the clean electric power, and thus, the demand for the clean electric power serving as the electric power for charging electric vehicles can be increased. | 07-31-2014 |
20140249913 | ADVERTISEMENT PRESENTATION SYSTEM, ADVERTISEMENT PRESENTATION DEVICE, AND ADVERTISEMENT PROVISION DEVICE - An information management center transmits advertisement information to a vehicle. The vehicle displays a predetermined advertisement on a body display part based on the transmitted advertisement information. After a predetermined time has passed since the display of the advertisement by the body display part ended, the information management center acquires the results information about change of the sales results of an advertised good which is an object of a predetermined advertisement from the store existing within a predetermined distance from a location of the body display part through a network. The information management center returns remuneration to a user of the vehicle which permitted use of the body display part, when a sales volume, for example, is increasing based on the acquired results information. | 09-04-2014 |
20140337546 | INFORMATION INPUTTING APPARATUS, INFORMATION PROVIDING APPARATUS, AND INFORMATION PROVIDING SYSTEM PROVIDED WITH THESE APPARATUSES - A vehicle is provided with a button that is depressed by a driver at any time for inputting intention information indicating an intention of approving a condition or an intention of rejecting the condition. The intention information inputted by the depressing operation of the button is transmitted to an information providing center. The intention information is transmitted together with position information indicating a point where the button is depressed and time information indicating a time. In the center, a server provides related information related to the transmitted intention information as a feedback. The server also supposes the reason why the transmitted intention information is inputted, and transmits the supposed reason to a closed SNS or an open SNS with a response form. The server then determines a reason of input based upon a response in accordance with the response form, and accumulates the determined reason in an information storage section so as to be retrievable in association with the intention information. | 11-13-2014 |
20150126225 | POSITION INFORMATION PROVIDING DEVICE, POSITION INFORMATION PROVIDING SYSTEM - A navigation device, which works as a position information providing device for providing information on positions to a user, includes a terminal ECU that can log in management servers, each of which manages a social networking service (SNS) to which information can be posted, via a line network. The terminal ECU logs in the management servers via the line network in synchronization with a start operation of the navigation device to acquire the whole or a part of posting information on positions posted to the SNS by network users and accumulated in the management servers. | 05-07-2015 |
20150142497 | ON-DEMAND VEHICLE SERVICE MANAGEMENT DEVICE, ON-DEMAND VEHICLE SERVICE MANAGEMENT METHOD, AND ON-DEMAND VEHICLE SERVICE MANAGEMENT SYSTEM - An operation management center uses desired provision content and desired provision time of a commodity or service to determine a first operation schedule in which a user is moved to a location at which the commodity or the service is to be provided or a second operation schedule in which the commodity or the service is moved to a location at which the provision of the commodity or the service is to be received by the user. The center determines the first operation schedule or the second operation schedule so as to satisfy the desired provision time desired by the user. | 05-21-2015 |
20150154870 | POSITION INFORMATION TRANSMISSION APPARATUS, POSITION INFORMATION TRANSMISSION SYSTEM, AND VEHICLE - A navigation device serving as a position information transmission apparatus for transmitting position information about a vehicle to a position information service center includes a terminal ECU that is authorized to log in to the position information service center via networks. The terminal ECU is configured to, in a logged-in state to the position information service center, transmit the position information about the vehicle to the position information service center on condition that a predetermined operation has been performed. | 06-04-2015 |
20150180947 | INFORMATION-PROVIDING DEVICE, INFORMATION-PROVIDING SYSTEM - An information-providing system for providing information to a user includes an information terminal including a display unit as an output unit capable of outputting information, and an information management server for managing a predetermined site, which is registered by the user and is capable of providing information on a network, the information management server being connected to the information terminal via networks to be able to communicate information to and from the information terminal. The information terminal and the information management servers respectively include control units for causing, when a significant change has been made, through involvement of another party other than the user, to a site status of the predetermined site, the display unit as the output unit to output recommendation information for recommending access to the predetermined site. | 06-25-2015 |
20150227359 | IN-VEHICLE DEVICE, MOBILE TERMINAL, INFORMATION MANAGEMENT DEVICE AND INFORMATION COMMUNICATION SYSTEM - An information communication system includes an in-vehicle device mounted on a vehicle and a mobile terminal connected to the in-vehicle device so as to be able to cooperate with the in-vehicle device. In the information communication system, when a first software module embedded in the mobile terminal has been updated, a second software module embedded in the in-vehicle device is updated on the basis of software information about the updated first software module. | 08-13-2015 |