Masato Aoki
Masato Aoki, Nagano JP
Patent application number | Description | Published |
---|---|---|
20120293100 | DRIVING CONTROL APPARATUS OF BRUSHLESS MOTOR - A driving control apparatus includes an inverter circuit, a motor driving circuit and a motor control unit. In performing overlap energization, at a start time of an overlap time period, a pulse width of a first PWM signal at an energization side is widened to increase a number of pulses of a second PWM signal accordingly, and a first PWM signal at an energization side corresponding to a constant voltage side is also widened. | 11-22-2012 |
20130069564 | POWER CONTROLLER - There is provided a power controller including a drive circuit connected to a DC power supply to apply a first voltage to the drive circuit and configured to supply power to an external load, a current detection circuit configured to detect a current flowing in the drive circuit by converting the current into a second voltage corresponding to the current, and a current-voltage control unit configured to generate a reference voltage corresponding to a limit value of the current flowing in the drive circuit when the first voltage is applied to the drive circuit, and configured to control the drive circuit to operate in a desired current according to the first voltage, based on a comparison result of the reference voltage and the second voltage. | 03-21-2013 |
Masato Aoki, Kiyosu-Shi JP
Patent application number | Description | Published |
---|---|---|
20130240945 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A method for producing a group III nitride semiconductor light-emitting device, by which a non-light-emitting region is easily formed, is disclosed. Mg is activated to convert a p-type layer into p-type, and a p-electrode is then formed on the p-type layer. An Ag paste is applied to a region on the p-electrode and overlapping an n-electrode formed in a subsequent step. Heat treatment is conducted to solidify the Ag paste, thereby forming an Ag paste solidified body. By this, a region overlapping the Ag paste solidified body in a planar view, of the p-type layer converts into a region having high resistance, and a high resistance region is formed. As a result, a region overlapping the high resistance region in a planar view, of a light-emitting layer becomes a non-light-emitting region. | 09-19-2013 |
20130256687 | GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR PRODUCING THE SAME - A group III nitride compound semiconductor light emitting device that inhibits occurrence of dislocation in a strain relaxation layer in forming a group III nitride compound semiconductor layer on a thin GaN substrate, and a method for producing the same are provided. A light emitting device | 10-03-2013 |
20150030046 | Group III Nitride Semiconductor Light-Emitting Device - The present invention provides a Group III nitride semiconductor light-emitting device exhibiting improved emission output. The light-emitting device comprises an n-type contact layer on which an n-electrode is formed, a light-emitting layer, an n-type cladding layer formed between the light-emitting layer and the n-type contact layer. The n-type cladding layer has a structure of at least two layers including a first n-type cladding layer closer to the light-emitting layer and a second n-type cladding layer farther from the light-emitting layer than the first n-type cladding layer. The first n-type cladding layer has a Si concentration higher than that of the second n-type cladding layer, and the first n-type cladding layer has a thickness smaller than that of the second n-type cladding layer. | 01-29-2015 |
20150236193 | Method For Producing Group III Nitride Semiconductor Light-Emitting Device - The present techniques provide a method for producing a Group III nitride semiconductor light-emitting device, with suppression of an increase in polarity inversion defect density. The production method includes an n-type semiconductor layer formation step, a light-emitting layer formation step, and a p-type semiconductor layer formation step. The p-type semiconductor layer formation step includes a p-type cladding layer formation step. The p-type cladding layer formation step includes a first p-type semiconductor layer formation step for forming a p-type AlGaN layer, a first semiconductor layer growth intermission step after the first p-type semiconductor layer formation step, and a p-type InGaN layer formation step after the first semiconductor layer growth intermission step. In the first semiconductor layer growth intermission step, a mixture of nitrogen gas and hydrogen gas is supplied to the substrate. | 08-20-2015 |
Masato Aoki, Iwata-Shi, Shizuoka JP
Patent application number | Description | Published |
---|---|---|
20130207581 | DRIVING CONTROL DEVICE OF BRUSHLESS MOTOR - A driving control device of a brushless motor includes an inverter circuit having: first arm-side switching elements that are connected between respective phases of respective armature coils of the brushless motor and one terminal of a power supply; and second arm-side switching elements that are connected between respective phases of the respective armature coils and the other terminal of the power supply, and a control unit, wherein, in a short-circuit braking according to a short-circuit braking signal, the control unit outputs a signal of turning off all the first arm-side switching element and outputs a signal of controlling the at least one of the second arm-side switching elements to perform a switching operation and turning on the other second arm-side switching elements. | 08-15-2013 |
Masato Aoki, Iwata-Shi JP
Patent application number | Description | Published |
---|---|---|
20140139153 | DRIVING CONTROL DEVICE OF MOTOR - A driving control device of a motor includes: a motor driving unit, which drives a motor in response to a driving control signal; and a control unit, which determines an energization pattern applied to an armature coil based on a detected rotational position of the rotor, wherein the control unit starts rotation control by a preset first energization pattern when activating of the motor, wherein when a predetermined time period has elapsed, the control unit adjusts energizing timing to be a timing, at which a short of each phase is not caused at switching of the energization pattern, and then outputs the driving control signal to the motor driving unit so that the rotation control is switched to rotation control of a second energization pattern, which has a predetermined advanced angle amount with respect to the first energization pattern. | 05-22-2014 |
Masato Aoki, Iwata-City JP
Patent application number | Description | Published |
---|---|---|
20150349678 | MOTOR DRIVING CONTROL METHOD AND MOTOR DRIVING CONTROL DEVICE - An H-bridge circuit controls a motor and includes a first series circuit of switching elements and a second series circuit of switching elements connected in parallel to the first series circuit. A motor driving control method includes a step of turning each of the switching elements Q | 12-03-2015 |