Patent application number | Description | Published |
20100062366 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R | 03-11-2010 |
20100062372 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by at least one of formulae (1-1) to (1-3) wherein R | 03-11-2010 |
20100062373 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R | 03-11-2010 |
20100062374 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition comprises (A) a resin component which becomes soluble in an alkaline developer under the action of an acid and (B) an acid generator. The resin (A) is a polymer comprising recurring units containing a non-leaving hydroxyl group represented by formula (1) wherein R | 03-11-2010 |
20100086878 | PATTERNING PROCESS - A pattern is formed by applying a first positive resist material onto a substrate, heat treating, exposing to high-energy radiation, heat treating, then developing with a developer to form a first resist pattern; applying a protective coating solution comprising a hydrolyzable silicon compound having an amino group onto the first resist pattern and the substrate, heating to form a protective coating; and applying a second positive resist material thereon, heat treating, exposing to high-energy radiation, heat treating, and then developing with a developer to form a second resist pattern. By forming the second pattern in a space portion of the first pattern, this double patterning reduces the pattern pitch to one half. | 04-08-2010 |
20100159392 | PATTERNING PROCESS AND RESIST COMPOSITION - A pattern is formed by coating a first positive resist composition comprising a copolymer comprising lactone-containing recurring units and acid labile group-containing recurring units onto a substrate to form a first resist film, patternwise exposure, PEB, and development to form a first resist pattern, applying an amine or oxazoline compound to the first resist pattern for inactivation, coating a second positive resist composition comprising a C | 06-24-2010 |
20100209849 | PATTERN FORMING PROCESS AND RESIST-MODIFYING COMPOSITION - A patterning process includes (1) coating and baking a first positive resist composition to form a first resist film, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) applying a resist-modifying composition to the first resist pattern and heating to modify the first resist pattern, (3) coating and baking a second positive resist composition to form a second resist film, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The modified first resist film has a contact angle with pure water of 50°-85°. | 08-19-2010 |
20100297554 | RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS - A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist-modifying composition comprises a carbamate compound and a solvent. | 11-25-2010 |
20100297563 | RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS - A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A | 11-25-2010 |
20110033799 | PATTERN FORMING PROCESS, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND RESIST-MODIFYING COMPOSITION - A pattern is formed by (1) coating a first positive resist composition onto a substrate, baking, patternwise exposing, PEB, and developing to form a first positive resist pattern including a large area feature, (2) applying a resist-modifying composition comprising a basic nitrogen-containing compound and heating to modify the first resist pattern, and (3) coating a second positive resist composition thereon, patternwise exposing, and developing to form a second resist pattern. The large area feature in the first resist pattern has a film retentivity of at least 50% after the second pattern formation. | 02-10-2011 |
20120202158 | PATTERNING PROCESS - A negative pattern is formed by coating a resist composition onto a substrate, exposure, bake, and development in alkaline water. The resist composition comprises a polymer comprising acid labile group-containing recurring units, adapted to turn soluble in alkaline developer under the action of acid, an acid generator and/or an acid, a photobase generator capable of generating an amino-containing compound, a quencher for neutralizing acid for inactivation, and an organic solvent. | 08-09-2012 |
20130017484 | POLYMERIZABLE ESTER COMPOUND, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESSAANM HASEGAWA; KojiAACI Joetsu-shiAACO JPAAGP HASEGAWA; Koji Joetsu-shi JPAANM SAGEHASHI; MasayoshiAACI Joetsu-shiAACO JPAAGP SAGEHASHI; Masayoshi Joetsu-shi JPAANM SUKA; YuukiAACI Joetsu-shiAACO JPAAGP SUKA; Yuuki Joetsu-shi JPAANM IIO; MasashiAACI Joetsu-shiAACO JPAAGP IIO; Masashi Joetsu-shi JP - Polymerizable ester compounds having formula (1) are novel wherein R | 01-17-2013 |
20140087294 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS - In a chemically amplified positive resist composition comprising (A) a base resin, (B) a photoacid generator, (C) a thermal crosslinker, and (D) an organic solvent, the base resin is a specific polymer and the crosslinker is a siloxane compound. A coating of the composition is readily developable in aqueous alkaline solution. On heat treatment, it forms a cured resist pattern film of satisfactory profile. | 03-27-2014 |
20140220497 | METHODS FOR MANUFACTURING RESIN STRUCTURE AND MICRO-STRUCTURE - A resin structure for the formation of a micro-structure is manufactured by (A) applying a composition comprising a polymer, a photoacid generator, an epoxy compound, and an organic solvent onto a substrate, (B) heating the composition to form a sacrificial film, (C) exposing imagewise the film to first high-energy radiation, (D) developing the film in an alkaline developer to form a sacrificial film pattern, (E) exposing the sacrificial film pattern to UV as second high-energy radiation, and (F) heating the substrate at 80-250° C. The exposure dose of first high-energy radiation in step (C) is up to 250 mJ/cm | 08-07-2014 |