Patent application number | Description | Published |
20090323376 | SEMICONDUCTOR DEVICE, INTEGRATED CIRCUIT INCLUDING THE SEMICONDUCTOR DEVICE, CONTROL IC FOR SWITCHING POWER SUPPLY AND THE SWITCHING POWER SUPPLY - A semiconductor device incorporates a resistor on a structure that uses diffusion layers for sustaining the breakdown voltage thereof to realizes a very resistive element that exhibits a high breakdown voltage and high electrical resistance, includes a spiral very resistive element buried in an interlayer insulator film. A first end of the very resistive element is connected to a drain electrode wiring and the second end of the very resistive element is grounded. An intermediate point of the very resistive element is connected to ae voltage comparator of a control IC. The semiconductor device according to the invention facilitates reducing the components parts costs, assembly costs and size of a switching power supply that includes a very resistive element. | 12-31-2009 |
20150228641 | SEMICONDUCTOR DEVICE, CONTROL IC FOR SWITCHING POWER SUPPLY, AND SWITCHING POWER SUPPLY UNIT - Aspects of the invention can include a semiconductor device, control IC for switching power supply and switching power supply unit, which allow input voltage detecting function to be realized without resistor-voltage dividing circuit. An npn-type element consisting of p-type region, collector region and emitter region is included inside of drain region of starting element. On a first interlayer insulating film, aspects of the invention can provide collector electrode wiring of npn-type element, emitter-drain electrode wiring serving as both emitter electrode wiring of npn-type electrode and drain electrode wiring of starting element, source electrode wiring of starting element, and gate electrode wiring of starting element. A first metal wiring can serve both as input terminal of starting element and input terminal of npn-type element is connected to collector electrode wiring. The npn-type element can function as input voltage detecting means for detecting input voltage drop applied to the first wiring. | 08-13-2015 |
20150311197 | SEMICONDUCTOR DEVICE, SWITCHING POWER SUPPLY CONTROL IC, AND SWITCHING POWER SUPPLY DEVICE - A semiconductor device has a configuration wherein a resistor that restricts overvoltage is inserted between an input terminal and the drain of JFETs, and the resistor is disposed on the JFETs. Also, the resistor is formed contiguously and integrally with a spiral form high breakdown voltage high resistance element that configures a resistive voltage divider circuit. | 10-29-2015 |
20160133704 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first conductive type first main electrode region, a first conductive type drift region which makes contact with the first main electrode region, a first conductive type second main electrode region which makes contact with the drift region, a second conductive type well region which is provided in a part of a surface layer portion of the drift region and to which a reference potential is applied, and a first conductive type potential extracting region which is provided in a surface layer portion of the well region and to which the reference potential is applied. The well region serves as a base region which controls a current flowing between the potential extracting region and the drift region. Thus, it is possible to provide a novel semiconductor device which is high in reliability while the increase of the chip size can be suppressed. | 05-12-2016 |