Patent application number | Description | Published |
20090196789 | SOLDER ALLOY, SOLDER BALL AND ELECTRONIC MEMBER HAVING SOLDER BUMP - To provide a solder alloy, a solder ball and an electronic member having a solder bump, used for connection with a mother board or the like, having a melting temperature of less than 250° C. for the solder alloy, achieving high drop impact resistance required in mobile devices or the like. A solder alloy is used which consists of not less than 0.1 mass ppm of boron and not greater than 200 mass ppm of boron and a remainder comprising substantially not less than 40% by mass of Sn, in which its melting temperature is less than 250° C. | 08-06-2009 |
20110308371 | SAW WIRE AND METHOD OF MANUFACTURING SAW WIRE - There are provided a fixed-abrasive grain saw wire with a superior cutting performance and a manufacturing method thereof. Particularly, there are provided a fixed-abrasive grain saw wire with abrasive grains adhered to a metal wire via a Zn-based or Sn-based low-melting-point metal and a high-melting-point metal having a melting point higher than that of the low-melting-point metal, and a manufacturing method thereof. | 12-22-2011 |
20120038042 | LEAD-FREE SOLDER ALLOY, SOLDER BALL, AND ELECTRONIC MEMBER COMPRISING SOLDER BUMP - A lead-free solder alloy, a solder ball and an electronic member comprising a solder bump which enable the prevention of the occurrence of yellow discoloration on the surface of a solder after soldering, the surface of a solder bump after the formation of the bump in a BGA, and the surface of a solder bump after a burn-in test of a BGA. Specifically disclosed are: a lead-free solder alloy; a solder ball; and an electronic member comprising a solder bump, containing at least one additive element selected from Li, Na, K, Ca, Be, Mg, Sc, Y, lanthanoid series elements, Ti, Zr, Hf, Nb, Ta, Mo, Zn, Al, Ga, In, Si and Mn in the total amount of 1 ppm by mass to 0.1% by mass inclusive, with the remainder being 40% by mass or more of Sn. | 02-16-2012 |
20120223430 | SOLDER BALL FOR SEMICONDUCTOR PACKAGING AND ELECTRONIC MEMBER USING THE SAME - The present invention relates to a solder ball for semiconductor packaging and an electronic member having such solder ball. Specifically there are provided: a solder ball capable of ensuring a sufficient thermal fatigue property even when a diameter thereof is not larger than 250 μm as observed in recent years; and an electronic member having such solder ball. More specifically, there are provided: a solder ball for semiconductor packaging that is made of a solder alloy containing Sn as a main element, 0.1-2.5% Ag by mass, 0.1-1.5% Cu by mass and at least one of Mg, Al and Zn in a total amount of 0.0001-0.005% by mass, such solder ball having a surface including a noncrystalline phase that has a thickness of 1-50 nm and contains at least one of Mg, Al and Zn, O and Sn, and an electronic member having such solder ball. | 09-06-2012 |
20130236734 | METAL FOIL FOR BASE MATERIAL AND PRODUCING METHOD THEREOF - A metal foil including: a steel layer whose thickness is 10 to 200 μm; an Al-containing metal layer arranged on the steel layer; and plural granular alloys which exist in an interface between the steel layer and the Al-containing metal layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and wherein, when an equivalent sphere diameter of the granular alloys is x in units of μm and a thickness of the Al-containing metal layer is T in units of μm, the granular alloys satisfy x≦0.5T. | 09-12-2013 |
20130236737 | METAL FOIL FOR BASE MATERIAL - A metal foil including: a steel layer whose thickness is 10 to 200 μm; an alloy layer which contains Fe and Al and which is formed on the steel layer; and an Al-containing metal layer arranged on the alloy layer, wherein, when a cutting-plane line of a surface of the Al-containing metal layer is defined as a contour curve and an approximation straight line of the contour curve is defined as a contour average straight line, a maximum point, whose distance from the contour average straight line is more than 10 μm, is absent on the contour curve, and a thickness of the alloy layer is 0.1 to 8 μm and the alloy layer contains an Al | 09-12-2013 |
20140054766 | LEAD-FREE SOLDER BUMP BONDING STRUCTURE - According to a lead-free solder bump bonding structure, by causing the interface (IMC interface) of the intermetallic compound layer at a lead-free-solder-bump side to have scallop shapes of equal to or less than 0.02 [portions/μm] without forming in advance an Ni layer as a barrier layer on the surfaces of respective Cu electrodes of first and second electronic components like conventional technologies, a Cu diffusion can be inhibited, thereby inhibiting an occurrence of an electromigration. Hence, the burden at the time of manufacturing can be reduced by what corresponds to an omission of the formation process of the Ni layer as a barrier layer on the Cu electrode surfaces, and thus a lead-free solder bump bonding structure can be provided which reduces a burden at the time of manufacturing in comparison with conventional technologies and which can inhibit an occurrence of an electromigration. | 02-27-2014 |
20140109962 | INTERCONNECTOR FOR SOLAR CELLS, AND SOLAR CELL MODULE - The purpose of the present invention is to provide an interconnector for solar cells, which reduces the stress acting on a solar cell and suppresses warping and cracking of the solar cell. An interconnector for solar cells of the present invention is characterized by comprising an electrically conductive wire part and a surface layer that is formed on at least one wide surface of the electrically conductive wire part. The interconnector for solar cells is also characterized in that the surface layer has a function of reducing the stress that is caused by the difference between the thermal expansion coefficient of the electrically conductive part and the thermal expansion coefficient of a solar cell, said stress being generated when the interconnector is joined to the solar cell. | 04-24-2014 |