Patent application number | Description | Published |
20110159667 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A method for fabricating a semiconductor device according to the present invention includes the steps of: growing a p-type gallium nitride-based compound semiconductor layer by performing a metalorganic chemical vapor deposition process in a heated atmosphere so that the crystal-growing plane of the semiconductor layer is an m plane (Step S | 06-30-2011 |
20110179993 | CRYSTAL GROWTH PROCESS FOR NITRIDE SEMICONDUCTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including an m-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber, whereby an m-plane nitride semiconductor crystal having a smooth surface can be formed even if the thickness of the layer is 400 nm, and its growth time can be greatly decreased. | 07-28-2011 |
20110198568 | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCTION THEREOF - A light-emitting apparatus of the present invention includes: a mounting base | 08-18-2011 |
20110297956 | METHOD FOR MANUFACTURING GALLIUM NITRIDE COMPOUND SEMICONDUCTOR, AND SEMICONDUCTOR LIGHT EMITTING ELEMENT - The present invention is a method of manufacturing a gallium nitride-based compound semiconductor, including growing an m-plane InGaN layer whose emission peak wavelength is not less than 500 nm by metalorganic chemical vapor deposition. Firstly, step (A) of heating a substrate in a reactor is performed. Then, step (B) of supplying into the reactor a gas which contains an In source gas, a Ga source gas, and a N source gas and growing an m-plane InGaN layer of an In | 12-08-2011 |
20120001223 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PROCESS FOR PRODUCTION THEREOF - A nitride-based semiconductor light-emitting device | 01-05-2012 |
20120002134 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT, ILLUMINATING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING ILLUMINATING DEVICE - An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure | 01-05-2012 |
20120021549 | METHOD FOR GROWING CRYSTALS OF NITRIDE SEMICONDUCTOR, AND PROCESS FOR MANUFACTURE OF SEMICONDUCTOR DEVICE - A nitride semiconductor layer formation method includes the steps of: (S1) placing a substrate in a reaction chamber, the substrate including a −r-plane nitride semiconductor crystal at least in an upper surface; (S2) increasing a temperature of the substrate by heating the substrate placed in the reaction chamber; and (S3) growing a nitride semiconductor layer on the substrate. In the temperature increasing step (S2), a nitrogen source gas and a Group III element source gas are supplied into the reaction chamber. | 01-26-2012 |
20120091490 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - Provided is a light-emitting device including: a nitride semiconductor light-emitting element ( | 04-19-2012 |
20120146048 | GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE - Provided is a gallium nitride-based compound semiconductor light-emitting element, in which the concentration of Mg which is a p-type dopant in a p-GaN layer in which the (10-10) m-plane of a hexagonal wurtzite structure grows is adjusted in a range from 1.0×10 | 06-14-2012 |
20120182495 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHTING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR PRODUCING LIGHTING DEVICE - An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicnknesses of d | 07-19-2012 |
20120244686 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - An exemplary method for fabricating a semiconductor device includes the steps (a) growing a p-type gallium nitride-based compound semiconductor layer in a heated atmosphere; (b) cooling the p-type gallium nitride-based compound semiconductor layer; (c) forming three or more well layers before the step (a); and (d) forming an n-type semiconductor layer on a substrate before the step (c), wherein the step (c) includes growing each of the well layers to a thickness of 5 nm or more with the supply of the hydrogen gas to the reaction chamber cut off, and wherein the step (a) includes supplying hydrogen gas to the reaction chamber, and wherein the step (b) includes cooling the p-type gallium nitride-based compound semiconductor layer with the supply of the hydrogen gas to the reaction chamber cut off. | 09-27-2012 |
20130126900 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - Around a nitride-based semiconductor light-emitting element which has a polarization characteristic, a transparent encapsulating member which has a cylindrical shape is provided such that the symmetry plane of the cylindrical shape forms an angle of 25° to 65° with respect to the polarization direction of the nitride-based semiconductor light-emitting element. | 05-23-2013 |
20130146928 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride semiconductor light-emitting element | 06-13-2013 |
20130175566 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride-based semiconductor light-emitting element includes a substrate and a nitride semiconductor multilayer structure. The nitride semiconductor multilayer structure includes a nitride semiconductor active layer which emits polarized light. Angle θ, which is formed by at least one of the plurality of lateral surfaces of the substrate with respect to the principal surface of the substrate, is greater than 90°. Angle θ | 07-11-2013 |
20130207150 | NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE - A nitride-based semiconductor light-emitting device of the present disclosure includes: a semiconductor multilayer structure which includes an active layer that is made of a nitride semiconductor, a principal surface of the nitride semiconductor being a semi-polar plane or a non-polar plane and which has recessed/elevated surfaces including at least either of recessed portions and elevated portions; an electrode covering a side of the semiconductor multilayer structure at which the recessed/elevated surfaces is provided, the electrode being configured to reflect at least part of light emitted from the active layer; and a birefringent substrate provided on a side of the semiconductor multilayer structure which is opposite to the recessed/elevated surfaces, the birefringent substrate being configured to transmit light emitted from the active layer and light reflected by the electrode. | 08-15-2013 |
20130240942 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting chip including a nitride semiconductor active layer having a nonpolar plane as a growth surface is configured such that when regions of a surface of a mounting substrate illuminated with light from the active layer and located laterally outward from the chip along a crystal axis that is parallel to the active layer and perpendicular to a polarization direction from the active layer are high polarization regions, and regions of the surface of the substrate illuminated with the light from the active layer except the high polarization regions are low polarization regions, metal is placed on a portion of the high polarization regions, and the proportion of mirror reflection from a portion of the low polarization regions is lower than that from the metal, and the proportion of mirror reflection from the high polarization regions is higher than that from the low polarization regions. | 09-19-2013 |
20130248877 | GALLIUM NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING ELEMENT, LIGHT SOURCE, AND METHOD FOR FORMING UNEVENNESS STRUCTURE - The light extraction surface of a nitride semiconductor light-emitting element, including a crystal plane other than a c plane, is subjected to a surface modification process to control its wettability, and then covered with a layer of fine particles. By etching that layer of fine particles after that, an unevenness structure, in which roughness curve elements have an average length (RSm) of 150 nm to 800 nm, is formed on the light extraction surface. | 09-26-2013 |
20140014997 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND LIGHT SOURCE INCLUDING THE NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A nitride semiconductor light-emitting element includes: n-side and p-side electrodes; n-type and p-type nitride semiconductor layers; and an active layer arranged between the n- and p-type nitride semiconductor layers. The p-type nitride semiconductor layer has a projection having a height of 30 nm to 50 nm. The projection is formed of a p-type nitride semiconductor including magnesium and silicon. The p-type nitride semiconductor has a silicon concentration of 1.0×10 | 01-16-2014 |
20140034961 | SURFACE-MODIFIED SEMICONDUCTOR, METHOD OF MAKING THE SEMICONDUCTOR, AND METHOD OF ARRANGING PARTICLES - The terminating layer that covers the top layer of a GaN-based semiconductor having a principal surface which is either a non-polar plane or a semi-polar plane, is removed by performing an organic solvent cleaning process step, and replaced with an organic solvent cleaned layer. Next, by irradiating the semiconductor with an ultraviolet ray, the organic solvent cleaned layer is removed to form a surface-modified layer instead. By performing these process steps, the top layer of the GaN-based semiconductor becomes the surface-modified layer and an electrical polarity is given to the surface of the GaN-based semiconductor. As a result, the hydrophilicity, hydrophobicity and wettability of the GaN-based semiconductor can be controlled. | 02-06-2014 |
20140042456 | NITRIDE SEMICONDUCTOR LIGHT EMITTING CHIP, AND NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting chip includes: a conductive substrate including a nitride semiconductor layer; an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer sequentially formed on a principal surface of the nitride semiconductor layer; and an n-side electrode formed in contact with the conductive substrate. A recess is formed in a back surface of the conductive substrate opposite to the principal surface. The n-side electrode is in contact with at least part of a surface of the recess. A depth D1 is not less than 25% of a thickness T, where T represents a thickness of the conductive substrate, and D1 represents a depth of the recess. | 02-13-2014 |
20140048821 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light-emitting device includes a nitride semiconductor light-emitting chip including an active layer for outputting polarized light, the active layer having a non-polar plane or a semi-polar plane as a growth plane; and a light-transmissive cover for transmitting light from the active layer. The light-transmissive cover includes a first light-transmissive member located in an area, among areas to the side of the nitride semiconductor light-emitting chip, and in a direction perpendicular to a polarization direction of the polarized light, and a second light-transmissive member located in an area above the nitride semiconductor light-emitting chip. The first light-transmissive member has a higher diffuse transmittance than the second light-transmissive member. | 02-20-2014 |
20140264372 | STRUCTURE AND MANUFACTURING METHOD OF THE STRUCTURE, AND GALLIUM NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE STRUCTURE AND MANUFACTURING METHOD OF THE DEVICE - In a structure including a gallium nitride-based semiconductor having an m-plane as a principal plane, and a metal layer provided on the principal plane, the principal plane has an n-type conductivity. An interface between the gallium nitride-based semiconductor and the metal layer contains oxygen. The metal layer includes a crystal grain extending form a lower surface to an upper surface of the metal layer. | 09-18-2014 |