Patent application number | Description | Published |
20090029486 | Substrate Processing Apparatus and Substrate Processing Method - A substrate processing apparatus has: a process chamber in which a substrate is processed; a heating device that optically heats the substrate accommodated in the process chamber from an outer periphery side of the substrate; a cooling device that cools the outer periphery side of the substrate by flowing a fluid in a vicinity of an outer periphery of the substrate optically heated by the heating device; a temperature detection portion that detects a temperature inside the process chamber; and a heating control portion that controls the heating device and the cooling device in such a manner so as to provide a temperature difference between a center portion of the substrate and an end portion of the substrate while maintaining a temperature at the center portion at a pre-determined temperature according to the temperature detected by the temperature detection portion. | 01-29-2009 |
20090197352 | Substrate processing method and film forming method - A substrate processing method in a processing chamber, has: accommodating a substrate into a processing chamber; and processing the substrate in the processing chamber on the basis of a correlation of a preset temperature of a heating device, a flow rate of fluid supplied by a cooling device and a temperature deviation between the center side of the substrate accommodated in the processing chamber and the outer peripheral side of the substrate while the substrate accommodated in the processing chamber is optically heated from an outer periphery side of the substrate at a corrected preset temperature by the heating device and the fluid is supplied to the outside of the processing chamber at the flow rate based on the correlation concerned to cool the outer peripheral side of the substrate by the cooling device. | 08-06-2009 |
20090197402 | SUBSTRATE PROCESSING APPARATUS, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND PROCESS TUBE - In a substrate processing apparatus, a process vessel is configured to accommodate and process a substrate held at a horizontal position. A gas introduction port is installed at a periphery of a first side of the process vessel and configured to introduce gas into the process vessel from a lateral direction of the substrate. A gas exhaust port is installed at a second side of the process vessel which is opposite to the first side, and is configured to exhaust gas inside the process vessel from a lateral direction of the substrate. A slope part is installed between the gas introduction port and the gas exhaust port inside the process vessel, and is configured to guide a flow path of the gas introduced into the process vessel. | 08-06-2009 |
20100032425 | SUBSTRATE PROCESSING APPARATUS, HEATING DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Provided are a substrate processing apparatus, a heating device, and a semiconductor device manufacturing method. The substrate processing apparatus comprises a process chamber configured to process a substrate. A heating element is installed at a peripheral side of the process chamber. An annular inner wall is installed at a peripheral side of the heating element. An annular outer wall is installed at a peripheral side of the inner wall with a space being formed therebetween. An annular cooling member is installed at the space for cooling. An actuating mechanism moves the cooling member between a contact position where the cooling member makes contact with at least one of the inner wall and the outer wall and a non-contact position where the cooling member does not make contact with any one of the inner wall and the outer wall. A control unit controls at least the actuating mechanism. | 02-11-2010 |
20100229416 | SUBSTRATE PROCESSING APPARATUS - Provided is a substrate processing apparatus that can decrease the time necessary for cooling a processed wafer for improving the throughput. The substrate processing apparatus comprises: a process chamber configured to process a substrate; a substrate supporter configured to support the substrate and load the substrate into the process chamber; a transfer mechanism configured to carry the substrate to the substrate supporter; and a non-sealing type shield part installed between the substrate supporter and the transfer mechanism. | 09-16-2010 |
Patent application number | Description | Published |
20090014428 | Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and extending member - A heating apparatus comprises heating elements arranged of a sheet form and having notches or through holes provided therein, a side wall member made of an electrically conductive material and arranged to surround and define the heating space, and holding members disposed at the heating space side of the side wall member for holding at one end the heating elements. Also, extending members are provided, each member comprising an extending-through portion arranged to project from the heating space side of the side wall member and extend through the notch or through hole between both ends in the heating element and projected portions arranged to project at both, front and back, sides of the heating element from the extending-through portion in a direction, which is orthogonal to the extending direction of the extending-through portion, thus to inhibit the displacement of the heating elements along the extending direction. | 01-15-2009 |
20090014435 | Heating apparatus, substrate processing apparatus employing the same, method of manufacturing semiconductor devices, and insulator - A heating apparatus comprises a heating element, an inner shell for supporting the heating element, an outer shell disposed along the outer boundary of the inner shell, a cooling medium passage for conveying a cooling medium between the inner shell and the outer shell, a first opening provided in the inner shell, a second opening provided in the outer shell, and a partition arranged to extend from the first opening to the second opening for developing at least a space separated from the cooling medium passage and between the inner shell and the outer shell. The heating apparatus further comprises an insulator for shutting up a gap provided between the partition and the second opening. | 01-15-2009 |
20090016706 | Heating apparatus, substrate processing apparatus, and method of manufacturing semiconductor devices - A heating apparatus comprises a wall for surrounding and defining a heating space, a heating element mounted on the inner side of the wall, reflecting members for reflecting the heat emitted from the heating element. Also, a moving unit joined to one end of each of the reflecting members for moving the reflecting members. Moreover, pivotal members joined to the reflecting members beside more their respective other side than one side of the reflecting members for controlling as pivots the movement of the reflecting member driven by the moving unit. | 01-15-2009 |
20090035948 | Substrate processing apparatus, heating apparatus for use in the same, method of manufacturing semiconductors with those apparatuses, and heating element supporting structure - A substrate treating device comprising a treatment chamber for storing and treating substrates and a heating device having a heating element and a heat insulator and heating the substrates in the treatment chamber by the heating element. The heating element is so formed that only its one end is held by a holding part, and a projection projected to the treatment chamber side at the intermediate part of the heating element and positioned in proximity to or in contact with the heating element is formed on the heat insulator. A pin with an enlarged part is passed through the heating element and the heat insulator at the intermediate part of the heating element and The enlarged part is positioned in proximity to or in contact with the heating element. The plurality of projections may be formed on the heat insulator and the pins may be disposed between these plurality of projections. | 02-05-2009 |
20090291566 | Substrate Processing Apparatus, Coolant Gas Supply Nozzle and Semiconductor Device Manufacturing Method - A substrate processing apparatus comprises a processing chamber for storing a boat supporting multiple substrates and for processing the multiple substrates, a heater unit installed around the processing chamber for heating the substrates, and a coolant gas supply nozzle including a pipe section extending perpendicular to a main surface of the substrate supported in the boat stored in the processing chamber, and a spray hole formed on the pipe section for spraying coolant gas to at least two of the multiple substrates, wherein the coolant gas supply nozzle is formed so that the cross sectional area of the pipe section in the area where the spray hole is formed is larger than the total opening area of the spray hole. | 11-26-2009 |
20110170989 | SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a substrate processing apparatus suppressing the vibration of a cover in an initial stage of unloading a boat from a process pipe. The substrate processing apparatus comprises: a boat for placing a substrate; a process pipe receiving the boat; a cover on which the boat is placed, the cover opening and closing a furnace port installed on a lower end of the process pipe; an elevation mechanism moving the cover upward and downward; a motor driving the elevation mechanism; a sealing member sealing a space between the cover and a lower end surface of the process pipe; and a controller controlling torque of the motor such that the substrate is maintained a rest position within the boat in a deformation recovery period of the cover occurring when the sealing member is removed from a surface of the cover or the lower end surface of the process pipe. | 07-14-2011 |
20140213069 | Substrate Processing Apparatus, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium - A substrate processing apparatus includes a process chamber in which a substrate is accommodated; a source gas supply system configured to supply a source gas onto the substrate; first and second reactive gas supply systems configured to supply a reactive gas onto the substrate via first and second interconnected reactive gas supply pipes, wherein a gas storage unit is installed at the second reactive gas supply pipe to store the reactive gas and the reactive gas is supplied onto the substrate via the gas storage unit; and a control unit configured to control the source gas supply system to supply the source gas onto the substrate and to control the first and second reactive gas supply systems to supply the reactive gas onto the substrate via the first and second reactive gas supply pipes. | 07-31-2014 |