Patent application number | Description | Published |
20100243538 | Purifier - A purifier is provided that is capable of uniformly sucking powder in a width direction of the sieve layers even when the purifier is configured to be provided with an air distribution chamber formed as being tapered upward and to have a horizontal cyclone provided above the air distribution chamber. | 09-30-2010 |
20110017982 | ELEMENT FOR ELECTRONIC COMPONENT - A surface of an anode body made of a metal material having a valve action is oxidized so as to form a dielectric layer, a conductive polymer precursor solution is stuck to the surface of the dielectric layer, the solvent is evaporated in an atmosphere of a relative humidity of 30 to 45% to be removed, electropolymerization is carried out so as to obtain a semiconductor layer having projections being 2 to 70 μm high on the outer surface thereof, a conductive carbon layer is laminated using a conductive carbon paste, and a conductive metal layer containing a metal conductive powder and a binder is laminated so as to obtain an element for an electronic component, and the element for an electronic component is encapsulated by a resin so as to obtain an electronic component. | 01-27-2011 |
20150333435 | WATERPROOF CONNECTOR - A waterproof connector is configured in such a manner that the waterproof properties between a housing and electrically conductive members, such as a shell and contacts, are improved. This waterproof connector includes a housing having an insulating resin and at least one electrically conductive member formed integrally with the housing. The electrically conductive member has a connection section which is exposed from the housing and connected to a mating connector, a mounting section which is exposed from the housing and mounted to a circuit board, and a holding section which connects the connection section and the mounting section, and which is embedded in the housing. A waterproof shaped section for blocking the entry of water along the interfaces between the holding section and the housing is formed on the surface of the holding section. | 11-19-2015 |
Patent application number | Description | Published |
20110012171 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, and a first main electrode. The second semiconductor layer is provided on the first semiconductor layer. The third semiconductor layer is provided on the first semiconductor layer in contact with the second semiconductor layer and has an impurity concentration higher than an impurity concentration of the first semiconductor layer. The first main electrode includes a first metal layer and a second metal layer made of a metal different from a metal of the first metal layer. The first metal layer is connected to the second semiconductor layer. The second metal layer is connected to the third semiconductor layer. | 01-20-2011 |
20120068220 | REVERSE CONDUCTING-INSULATED GATE BIPOLAR TRANSISTOR - According to one embodiment, in a reverse conducting-insulated gate bipolar transistor, the buffer layer is provided on the backside of the second base layer, has a higher impurity concentration in comparison with the second base layer. The first collector layer is in contact with a portion of the backside of the buffer layer, has a higher impurity concentration in comparison with the second base layer. The second collector layer is in contact with a portion of the backside of the buffer layer, is provided so as to surround the first collector layer, has a higher impurity concentration in comparison with the first base layer. The third collector layer is in contact with a portion of the backside of the buffer layer, is provided so as to surround the second collector layer, has a higher impurity concentration in comparison with the second collector layer. | 03-22-2012 |
20120241814 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes a p-type collector layer, an n-type base layer, a p-type base layer, an n-type source layer, and a gate electrode. The gate electrode is formed in a trench running from a surface of the n-type source layer through the n-type source layer and the p-type base layer to an interior of the n-type base layer via a gate insulating film. The gate electrode includes a first portion and a second portion. The first portion is opposed to a bottom end portion of the p-type base layer. The second portion is opposed to an upper end portion of the p-type base layer. The gate electrode is formed such that a threshold at the bottom end portion of the p-type base layer is not less than a threshold at the upper end portion of the p-type base layer. | 09-27-2012 |
20120241899 | POWER SEMICONDUCTOR DEVICE - A power semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of the second conductivity type. The second semiconductor layer is provided on the first semiconductor layer and has a lower concentration of first conductivity type impurity than the first semiconductor layer. The third semiconductor layer is provided on a surface of the second semiconductor layer. The fourth semiconductor layer is selectively provided on a surface of the third semiconductor layer and has a higher concentration of second conductivity type impurity than the third semiconductor layer. The third semiconductor layer includes a carrier lifetime reducing region adjacent to a bottom surface of the fourth semiconductor layer. The carrier lifetime reducing region is spaced from the second semiconductor layer. | 09-27-2012 |
Patent application number | Description | Published |
20100003468 | Method of forming microfined resist pattern - The present invention provides a pattern-producing method for fining a developed resist pattern without increasing the production cost or impairing the production efficiency seriously. This method comprises the step of bringing a resist pattern after development into contact with a treating solution preferably containing a nonionic surfactant for 60 seconds or more, so as to reduce the effective size of the resist pattern formed by the development. The present invention also provides a resist pattern fined by that method. | 01-07-2010 |
20100021700 | Method for formation of miniaturized pattern and resist substrate treatment solution for use in the method - The present invention provides a method for miniaturizing a pattern without seriously increasing the production cost or impairing the production efficiency. This invention also provides a fine resist pattern and a resist substrate-treating solution used for forming the fine pattern. The pattern formation method comprises a treatment step. In the treatment step, a resist pattern after development is treated with a resist substrate-treating solution containing an amino group-containing, preferably, a tertiary polyamine-containing water-soluble polymer, so as to reduce the effective size of the resist pattern formed by the development. The present invention also relates to a resist pattern formed by that method, and further relates to a treating solution used in the method. | 01-28-2010 |
20100028817 | Solution for treatment of resist substrate after development processing and method for treatment of resist substrate using the same - The present invention provides a resist substrate-treating solution for improving defects on a developed pattern surface, and also provides a resist substrate treatment method employing the treating solution. The resist substrate-treating solution comprises a solvent and a nitrogen-containing or oxygen-containing water-soluble polymer such as a polyamine, a polyol or a polyether. In the treatment method, a developed resist pattern is treated with the resist substrate-treating solution and then washed with pure water. | 02-04-2010 |
20100062363 | COMPOSITION FOR UPPER SURFACE ANTIREFLECTION FILM, AND METHOD FOR PATTERN FORMATION USING THE SAME - The present invention provides a composition for forming a top anti-reflection coating and also provides a pattern formation method employing that composition. The composition prevents pattern failures caused by light reflected in the resist layer in the exposure step, and it further avoids troubles caused by residues produced in the etching step. The composition contains a solvent and fine particles having a mean particle size of 1 to 100 nm. In the pattern formation method of the present invention, a top anti-reflection coating is formed from the composition. The composition and the method according to the present invention can be used to form a composite film composed of a resist layer and a top anti-reflection coating. | 03-11-2010 |
20100081087 | COMPOSITION FOR FORMATION OF ANTIREFLECTION FILM AND PATTERN FORMATION METHOD USING THE SAME - The present invention provides a composition for forming a top anti-reflection coating having such a low refractive index that it can be suitably used in pattern formation with an ArF excimer laser beam, and further the invention also provides a pattern formation method employing that composition. The top anti-reflection coating composition comprises a particular naphthalene compound, a polymer, and a solvent. The composition is used for forming a top anti-reflection coating provided on a photoresist layer. From the photoresist layer, a pattern can be formed by use of light in 160 to 260 nm. | 04-01-2010 |
20100233634 | Processing Liquid for Resist Substrate and Method of Processing Resist Substrate Using the Same - The present invention provides a resist substrate treating solution and a method for pattern formation using that treating solution, and thereby problems such as foreign substances on the substrate surface, pattern collapse and pattern roughness can be easily solved at the same time. The treating solution comprises water and an alkylene oxide adduct of a primary amine having a hydrocarbon group of 11 to 30 carbon atoms or of ammonia. The method for pattern formation according to the invention comprises a step of treating the developed pattern with that treating solution. | 09-16-2010 |
20150252222 | METHOD FOR FORMING DENSE SILICIC FILM - The present invention provides a dense silicic film and a producing method thereof. This method comprises coating a composition for coating film, which comprises a polymer having a silazane bond on a substrate, on a substrate, irradiating with light having a maximal peak in the range of 160-179 nm wavelength, and then irradiating with light having 10-70 nm wavelength longer maximal peak wavelength than the light used in the previous irradiation. | 09-10-2015 |
Patent application number | Description | Published |
20120089548 | METHOD FOR SUPPORTING MIGRATION DESTINATION DECISION AND MANAGEMENT SYSTEM - Each time data is migrated, a management system stores information denoting a migration history related to the migration of the data, in history management information. The management system receives an input of an administrator-desired attribute condition combination for a migration-destination storage device, identifies all device attribute combinations conforming to this attribute condition combination, and calculates multiple migration trends based on each device attribute combination and the history management information. The management system identifies, from among the multiple migration trends, a migration trend to which a specified migration-source storage device belongs, and displays information denoting at least this identified migration trend. | 04-12-2012 |
20130198457 | COMPUTER SYSTEM AND STORAGE CONTROL METHOD - The entirety or a part of free space of a second storage device included in a host computer is used as a cache memory region (external cache) outside of a storage apparatus. If Input/Output (I/O) in the host computer is Write, a Write request is transmitted from the host computer to a storage apparatus, the storage apparatus writes data associated with the Write request into a main cache that is a cache memory region included in this storage apparatus, and the storage apparatus writes the data in the main cache into a first storage device included in the storage apparatus. The storage apparatus writes the data in the main cache into an external cache included in the host computer. If the I/O in the host computer is Read, the host computer determines whether or not Read data as target data of the Read exists in the external cache. If a result of the determination is positive, the host computer reads the Read data from the external cache. | 08-01-2013 |