Patent application number | Description | Published |
20080197509 | Semiconductor package having stacked semiconductor chips - A semiconductor package including: a package substrate on the surface of which plural connection terminals are provided; a semiconductor chip on the surface of which plural bonding pads are provided; plural bonding wires that connect between the plural connection terminals and the plural bonding pads; a resin formed to fill a gap between the bonding wires and the surface of the semiconductor chip; and a semiconductor chip provided on the bonding wires via a film-shaped resin, wherein at least three of the plural bonding wires are formed at substantially the same heights and higher than other bonding wires. | 08-21-2008 |
20090086522 | ADDRESS LINE WIRING STRUCTURE AND PRINTED WIRING BOARD HAVING SAME - An address signal line having a stub structure connects between at least three memory elements and a data transferring element and transmits address signals for the memory elements. An address terminal of the data transferring element has an impedance lower than a characteristic impedance of the address signal line. A wiring length TL | 04-02-2009 |
20090134506 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND FLEXIBLE SUBSTRATE FOR MOUNTING SEMICONDUCTOR - A semiconductor device includes a second semiconductor package, which includes a substrate and at least one semiconductor package. The substrate includes a terminal group formed on a surface thereof. At least one first semiconductor package is stacked on the substrate, and includes a plurality of flexible substrates, each of which includes a wiring group on a surface thereof and each of which is bending-deformable. At least one first semiconductor package includes a plurality of semiconductor elements mounted on a plurality of flexible substrates. Electric conduction through the second semiconductor package is established by connecting the wiring group on each of a plurality of flexible substrates to the terminal group on the substrate. Further, at least one terminal of the terminal group on the substrate is electrically connected to all of the plurality of semiconductor elements on at least one first semiconductor package, and at least one other terminal of the terminal group is electrically connected only to particular semiconductor elements of the plurality of semiconductor elements. | 05-28-2009 |
20090206492 | Semiconductor device - A semiconductor device includes a semiconductor chip, a first substrate, and a second substrate. The first substrate includes a plurality of wires and a plurality of first electrodes, each first electrode being connected with each wire. The second substrate includes the semiconductor chip that is mounted thereon, and a plurality of second electrodes with, each second electrode being connected with the each first electrode of the first substrate. The widths of the wires of the first substrate are different depending on the lengths of the wires. By changing the widths of the wires depending on their lengths, it is possible to reduce variation in stiffness of the electrodes and vicinities of electrodes, whereby variation in ultrasonic bonding strength can be reduced. | 08-20-2009 |
20100038767 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The semiconductor device includes a stacked semiconductor package in which end portions of a plurality of flexible substrates have bonded portions which are connected together by wirings and in which a plurality of semiconductor packages are electrically connected to a mother substrate via the bonded portions. In at least a part of a region of portions of the plurality of flexible substrates that extends from the side surfaces of each of the semiconductor elements, and that is present between side surfaces of each of the semiconductor elements and the bonded portions of the flexible substrates, the plurality of flexible substrates have a curved portion, and the shape of the curved portion of at least one flexible substrate is different from the shape of a curved portion of another flexible substrate adjacent to this flexible substrate. | 02-18-2010 |
20100052133 | STACK TYPE SEMICONDUCTOR DEVICE WITH REINFORCING RESIN - A semiconductor device includes a plurality of semiconductor packages each with a semiconductor element and a flexible board. The flexible board is wider than the semiconductor element and is electrically connected to the semiconductor element. The plurality of semiconductor packages are stacked on one surface of a mother board. The semiconductor element is positioned between the flexible boards of the semiconductor packages in adjacent layers. The flexible boards in the adjacent layers are joined together at junction portions positioned at a part of the flexible boards which sticks out from an area in which the semiconductor elements and the flexible boards overlap. A reinforcing resin is provided in at least a part of the area between the flexible boards in the adjacent layers and between the junction portion of the flexible boards and the corresponding semiconductor element. The reinforcing resin contacts at least a part of the adjacent flexible board. | 03-04-2010 |
20110147945 | SEMICONDUCTOR DEVICE CAPABLE OF SUPPRESSING GENERATION OF CRACKS IN SEMICONDUCTOR CHIP DURING MANUFACTURING PROCESS - A semiconductor device includes a chip stacked body where a plurality of semiconductor chips are stacked, and penetration electrodes respectively formed in the semiconductor chips are electrically interconnected in stacking order of the semiconductor chips, a first support member that is disposed to face a first semiconductor chip formed in one end of the chip stacked body, and including electrodes electrically connected to the penetration electrodes of the first semiconductor chip, and a wiring board that is disposed to face a second semiconductor chip formed in an end opposed to the one end of the chip stacked body, and including external electrodes on a surface opposed to a surface facing the second semiconductor chip that is to be electrically connected to the penetration electrodes of the second semiconductor chip. | 06-23-2011 |
20110207322 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes, but is not limited to, the following processes. A seed layer is formed over a substrate. The seed layer includes first, second, and third portions. A first electrode covering the first portion of the seed layer is formed without forming an electrode on the second and third portions of the seed layer. The third portion of the seed layer is removed so that the first and second portions remain over the substrate, and the first and second portions are separated from each other. | 08-25-2011 |
20120127675 | APPARATUS HAVING A WIRING BOARD AND MEMORY DEVICES - An address signal line having a stub structure connects between at least three memory elements and a data transferring element and transmits address signals for the memory elements. An address terminal of the data transferring element has an impedance lower than a characteristic impedance of the address signal line. A wiring length TL | 05-24-2012 |
20120187402 | SEMICONDUCTOR DEVICE AND STACKED SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor chip having first and second surfaces. A first through electrode extends through the semiconductor chip. A first surface electrode is positioned on the first surface of the semiconductor chip and coupled to a first end of the first through electrode. A second surface electrode is positioned on the second surface of the semiconductor chip. The second surface electrode is coupled to a second end of the first through electrode. A second through electrode extends through the semiconductor chip and has third and fourth ends. A third surface electrode is positioned on the second surface of the semiconductor chip and is coupled to the fourth end of the second through electrode. The semiconductor device is free of a surface electrode on the first surface of the semiconductor chip and is coupled to the third end of the second through electrode. | 07-26-2012 |
20120313258 | SEMICONDUCTOR DEVICE HAVING THROUGH SILICON VIAS AND MANUFACTURING METHOD THEREOF - In The semiconductor device, a semiconductor substrate has first and second surfaces. A circuitry layer is formed over the first surface and a first insulating layer is further formed over the circuitry layer. A second insulating layer including a first insulating element is formed over the second surface. A third insulating layer including a second insulating element different from the first insulating element of the second insulating layer is formed over the second surface with an intervention of the second insulating layer therebetween. A penetration electrode penetrates through the semiconductor substrate, the circuitry layer, the first insulating layer, the second insulating layer and the third insulating layer. | 12-13-2012 |
20130000384 | MEASUREMENT SENSOR FOR MOLD INSIDE INFORMATION - Gas pressure in a cavity is detected with a rod-shaped casing that attaches to an hole that opens into the cavity. A porous filter whose top end face matches with a mold cavity face at a top end of the rod-shaped casing separates gas from melt. Cavity gas from an introduction chamber introduces gas through the porous filter, and a gas pressure sensor detects pressure in the chamber. Melt pressure in the cavity is detected with a pressure transmission rod inserted into the rod-shaped casing whose top end face matches with the mold cavity face, and a pressure sensor fixed and held facing a rear end of the pressure transmission rod detects the cavity melt pressure. Cavity melt temperature is detected with a temperature sensor attached to a thin hole formed at the pressure transmission rod's center and includes a thermocouple at a top end part side of the hole. | 01-03-2013 |
20140091656 | THREE-PHASE PERMANENT MAGNET TYPE MOTOR - A three-phase permanent magnet type motor has a stator in which a plurality of windings wound in a same direction are disposed, and the number of slots is 12n; a rotor in which the number of poles of the permanent magnet is 10n or 14n; and multilayer wiring boards for performing the connection so as to be 2m parallel. The three-phase permanent magnet type motor has a circuit configuration in which, among U-phase, V-phase, and W-phase, adjacent in-phase windings are connected in parallel and are connected in series with a like-pole winding of a symmetrical in-phase second winding group facing at 6-slot pitch angle, when a center of a first winding group of the adjacent in-phase windings is set as a reference axis, and in-phase transition wiring patterns are disposed on the same layer of the multilayer wiring boards in a line symmetrical manner. | 04-03-2014 |
20140299878 | SEMICONDUCTOR DEVICE AND STACKED SEMICONDUCTOR DEVICE - A semiconductor device includes a package substrate, and a stack of semiconductor chips over the package substrate, each of the semiconductor chips including first and second surfaces, each of the semiconductor chips including a first through electrode that extends through each of the semiconductor chips, a first surface electrode positioned on the first surface of each of the semiconductor chips, the first surface electrode being coupled to a first end of the first through electrode, a second surface electrode positioned on the second surface of each of the semiconductor chips, the second surface electrode being coupled to a second end of the first through electrode, a second through electrode that extends through each of the semiconductor chips, the second through electrode having third and fourth ends, and a third surface electrode positioned on the second surface of the first semiconductor chip. | 10-09-2014 |