Patent application number | Description | Published |
20080251287 | SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A substrate includes a storage portion which is defined by a base for mounting a light emitting element and a wall portion standing up on and from the base. A package is structured such that the upper end of the wall portion so formed as to surround the periphery of the storage portion is connected to a cover to thereby seal a light emitting element. A seal structure is composed of an uneven portion formed on the lower surface side surface of the base, a close contact layer formed on the surface of the uneven portion, a power supply layer formed on the close contact layer, and an electrode layer formed on the surface of the power supply layer. The uneven portion includes a first recessed portion formed at a position spaced in the radial direction from the outer periphery of a through electrode or from the inner wall of a through hole, and a second recessed portion formed at a position spaced further outwardly from the first recessed portion. | 10-16-2008 |
20080268210 | MANUFACTURING METHOD OF ELECTRONIC COMPONENT - A manufacturing method of an electronic component, characterized by having a first step of forming a treated substrate with a reinforcing part having a treated substrate body and a reinforcing part of the treated substrate body standing on a first principal surface of the treated substrate body, a second step of forming a first conductive pattern on the side of the first principal surface of the treated substrate body and forming a second conductive pattern on the side of a second principal surface of the treated substrate body, respectively, and a third step of cutting the treated substrate body and eliminating the reinforcing part and also dividing the treated substrate body into individual pieces. | 10-30-2008 |
20090081867 | METHOD OF MANUFACTURING SUBSTRATE - The present disclosure relates to a method of manufacturing a substrate. The method includes: (a) forming through holes by applying an anisotropic etching to a silicon substrate from a first surface of the silicon substrate; (b) forming a first insulating film to cover the first surface of the silicon substrate, surfaces of the silicon substrate exposed from the through holes, and a second surface of the silicon substrate opposite to the first surface; (c) forming an opening in a portion of the first insulating film provided on the second surface, the portion of the first insulating film corresponding to an area in which the through holes are formed; (d) etching the silicon substrate using the first insulating film provided on the second surface as a mask, thereby forming a cavity in the silicon substrate; and (e) removing the first insulating film. | 03-26-2009 |
20090093117 | METHOD OF MANUFACTURING SUBSTRATE - A method of manufacturing a substrate, includes: (a) forming the through hole by etching the silicon substrate from a first surface of the silicon substrate by a Bosch process; (b) forming a thermal oxide film such that the thermal oxide film covers the first surface of the silicon substrate, a second surface of the silicon substrate opposite to the first surface, and a surface of the silicon substrate corresponding to a side surface of the through hole, by thermally oxidizing the silicon substrate where the through hole is formed; (c) removing the thermal oxide film; (d) forming an insulating film such that the insulating film covers the first and second surfaces of the silicon substrate and the surface of the silicon substrate corresponding to the side surface of the through hole; and (e) forming the through electrode in the through hole on which the insulating film is formed. | 04-09-2009 |
20090095974 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A semiconductor package including a base body having a recessed portion for installing an electronic component on one surface, the recessed portion including an inner bottom surface, inclined surface and a shoulder part and a wiring pattern having one end positioned in the inner bottom surface of the recessed portion and the other end extending to an outside region of the recessed portion beyond the shoulder part of the recessed portion. The shoulder part of the recessed portion is a smoothly curved surface. | 04-16-2009 |
20090098712 | SUBSTRATE DIVIDING METHOD - A method of dividing a substrate | 04-16-2009 |
20090108411 | SILICON SUBSTRATE FOR PACKAGE - In a silicon substrate for a package, a through electrode is provided with which a through hole passing through from a bottom surface of a cavity for accommodating a chip of an electronic device to a back surface of the substrate is filled. An end part of the through electrode in the bottom surface side of the cavity has a connection part to a wiring that forms an electric circuit including the chip of the electronic device. The silicon substrate for a package is characterized in that (1) a thin film wiring is included as the wiring and the connection part is reinforced by a conductor connected to the thin film wiring and/or (2) a wire bonding part is included as the wiring and the connection part is formed by wire bonding the end part of the through electrode in the bottom surface side of the cavity. | 04-30-2009 |
20090115049 | SEMICONDUCTOR PACKAGE - A semiconductor package in which an electronic device chip is provided in a cavity of a silicon substrate stacked product constituted by stacking a plurality of silicon substrates. | 05-07-2009 |
20090121334 | MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS AND SEMICONDUCTOR APPARATUS - A required number of wiring layers | 05-14-2009 |
20090121344 | SILICON INTERPOSER AND SEMICONDUCTOR DEVICE PACKAGE AND SEMICONDUCTOR DEVICE INCORPORATING THE SAME - A silicon interposer | 05-14-2009 |
20090121345 | SILICON INTERPOSER PRODUCING METHOD, SILICON INTERPOSER AND SEMICONDUCTOR DEVICE PACKAGE AND SEMICONDUCTOR DEVICE INCORPORATING SILICON INTERPOSER - A silicon interposer producing method comprising the steps of forming through holes | 05-14-2009 |
20090236024 | METHOD OF MANUFACTURING WIRING SUBSTRATE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a wiring substrate is disclosed. The method includes: (a) preparing a supporting substrate including a main body and a through electrode penetrating the main body, wherein the supporting substrate includes a first surface and a second surface opposite to the first surface, and a trace is formed on the second surface of the supporting substrate; (b) forming a build-up wiring structure by alternately forming a wiring layer and an insulating layer on the first surface of the supporting substrate; and (c) obtaining a wiring substrate by separating the build-up wiring structure from the supporting substrate. Step (b) includes: forming the wiring layer using the through electrode as a power feeding wiring, and step (c) includes: peeling the build-up wiring structure from the supporting substrate to obtain the wiring substrate. | 09-24-2009 |
20090236031 | METHOD OF MANUFACTURING WIRING SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - There are provided a step of preparing a dummy chip, a step of forming a cavity in a stiffener substrate, a step of providing a second tape base member on one surface of the stiffener substrate, a step of inserting the dummy chip into the cavity to provide the dummy chip on the second tape base member, a step of sealing the stiffener substrate and the dummy chip with a sealing resin, a step of removing the second tape base member and forming a build-up wiring layer on a surface from which the second tape base member is removed, a step of removing the sealing resin; and a step of peeling the dummy chip from the build-up wiring layer. | 09-24-2009 |
20090236727 | WIRING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A wiring substrate is provided. The wiring substrate includes a multilayer wiring structure and a stiffener. The multilayer wiring structure includes: a plurality of insulating layers; a plurality of wiring patterns; and a plurality of chip mounting pads which are electrically connected to the wiring patterns and on which a semiconductor chip is flip-chip mounted. The stiffener is provided on a portion of the multilayer wiring structure, which is outside of a mounting area on which the semiconductor chip is flip-chip mounted. A thermal expansion coefficient of the stiffener is substantially equal to that of the semiconductor chip. | 09-24-2009 |
20090242107 | METHOD OF MANUFACTURING WIRING SUBSTRATE - A method includes the steps of providing a first tape base material on a single side of a stiffener substrate, forming, on the stiffener substrate, a cavity for accommodating a semiconductor chip therein, inserting the stiffener substrate in the cavity and providing the stiffener substrate on the first tape base material, sealing the semiconductor chip and the stiffener substrate with a sealing resin, and removing the first tape base material and forming a build-up layer on a tape removing surface. | 10-01-2009 |
20090284276 | PROBE CARD - A probe card is disclosed that includes a board having a first surface and a second surface facing away from each other and a through hole formed between the first and second surfaces; and a probe needle having a penetration part and a support part. The penetration part is placed in the through hole without contacting the board and projects from the first and second surfaces of the board. The support part is integrated with a first one of the end portions of the penetration part and connected to one of the first and second surfaces of the board. The support part has a spring characteristic. The penetration part is configured to have a second one of its end portions come into contact with an electrode pad of a semiconductor chip at the time of conducting an electrical test on the semiconductor chip. | 11-19-2009 |
20090300911 | METHOD OF MANUFACTURING WIRING SUBSTRATE AND CHIP TRAY - A method of manufacturing a wiring substrate comprises the steps of attaching a semiconductor chip to a chip positioning plate of a chip tray formed of silicon, executing wiring formation processing using the semiconductor chip attached to the chip positioning plate as a base point, and detaching the wiring-formed wiring substrate from the chip positioning plate. The chip positioning plate comprises a receiving part for receiving the semiconductor chip, and elastic members respectively disposed in two adjacent surfaces of four surfaces constructing an inside surface of the receiving part, and each of these elastic members exerts pressing force toward directions of opposite surfaces, and the semiconductor chip is pinched between each of the opposite surfaces corresponding to each of the elastic members. | 12-10-2009 |
20100038772 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD THEREOF - A semiconductor package includes a wiring board and a semiconductor device mounted on the wiring board. At least one penetration hole extends from one surface of the semiconductor chip to an opposite surface of the semiconductor chip. A penetration electrode is situated inside the penetration hole without contacting a wall of the penetration hole. The penetration electrode has one end fixed to the one surface of the semiconductor chip and an opposite end protruding from the opposite surface of the semiconductor chip. A connection terminal is formed on the opposite end of the penetration electrode and electrically connected to the wiring board. | 02-18-2010 |
20100062564 | METHOD FOR PRODUCING ELECTRONIC PART PACKAGE - A peeling off layer | 03-11-2010 |
20100155928 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF THE SAME - A semiconductor package includes: a wiring board; and a semiconductor device which is formed on the wiring board; wherein the semiconductor device includes: a semiconductor chip; and a penetration electrode, one end of which is fixed on one plane of the semiconductor chip, and the other end of which penetrates the semiconductor chip and is fixed on the other plane of the semiconductor chip, the penetration electrode penetrating the semiconductor chip in such a manner that the penetration electrode is not contacted to a wall plane of the semiconductor chip by a space portion formed in the semiconductor chip; and the wiring board and the semiconductor device are electrically connected via the penetration electrode. | 06-24-2010 |
20100289140 | SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR PACKAGE - A semiconductor package includes a semiconductor device, and a wiring board where the semiconductor device is mounted. The semiconductor device includes a semiconductor substrate, a piercing electrode configured to pierce the semiconductor substrate and electrically connect the wiring board and the semiconductor device, and a ring-shaped concave part provided so as to surround the piercing electrode, the ring-shaped concave part being configured to open to a wiring board side of the semiconductor substrate. | 11-18-2010 |
20100289155 | SEMICONDUCTOR PACKAGE - A semiconductor package includes a wiring board and a semiconductor device mounted on the wiring board. The semiconductor device includes a semiconductor substrate and a penetration electrode penetrating the semiconductor substrate. A cavity part is formed in the semiconductor substrate to isolate the penetration electrode from the semiconductor substrate. A connection terminal is provided at a position where the connection terminal does not overlap the penetration electrode in a plan view. The connection terminal electrically connects the semiconductor device to the wiring board. | 11-18-2010 |
20100321936 | LIGHTING APPARATUS - It is a lighting apparatus | 12-23-2010 |
20110032710 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting device including a light-emitting element and a substrate where the light-emitting element is arranged. A housing part housing the light-emitting element and having a shape that is tapered upward from the substrate and a metal frame surrounding the light-emitting element and including the side face of the housing part made into an almost mirror-polished surface are provided on the substrate. | 02-10-2011 |
20110074046 | PRINTED WIRING BOARD AND MANUFACTURING METHOD THEREOF - A printed wiring board is configured to be connected to an organic substrate in a state where a semiconductor chip is mounted thereon. A plurality of first layers are formed of a material having the same coefficient of thermal expansion as the semiconductor chip. A plurality of second layers are formed of a material having the same coefficient of thermal expansion as the organic substrate. The first layers have different thicknesses from each other and the second layers have different thicknesses from each other. The first layers and the second layers form a lamination by being laminated alternately one on another. The thicknesses of the first layers decrease from a side where the semiconductor chip is mounted toward a side where the organic substrate is connected. The thicknesses of the second layers decrease from the side where the organic substrate is connected toward the side where the semiconductor chip is mounted. | 03-31-2011 |
20110092020 | METHOD FOR PRODUCING ELECTRONIC PART PACKAGE - A peeling off layer | 04-21-2011 |
20110227218 | SILICON SUBSTRATE FOR PACKAGE - In a silicon substrate for a package, a through electrode is provided with which a through hole passing through from a bottom surface of a cavity for accommodating a chip of an electronic device to a back surface of the substrate is filled. An end part of the through electrode in the bottom surface side of the cavity has a connection part to a wiring that forms an electric circuit including the chip of the electronic device. The silicon substrate for a package is characterized in that (1) a thin film wiring is included as the wiring and the connection part is reinforced by a conductor connected to the thin film wiring and/or (2) a wire bonding part is included as the wiring and the connection part is formed by wire bonding the end part of the through electrode in the bottom surface side of the cavity. | 09-22-2011 |