Patent application number | Description | Published |
20100013006 | SEMICONDUCTOR DEVICE - A semiconductor device has a semiconductor substrate having a surface layer and a p-type semiconductor region, wherein the surface layer includes a contact region, a channel region and a drift region, the channel region is adjacent to and in contact with the contact region, the drift region is adjacent to and in contact with the channel region and includes n-type impurities at least in part, and the p-type semiconductor region is in contact with the drift region and at least a portion of a rear surface of the channel region, a main electrode disposed on the surface layer and electrically connected to the contact region, a gate electrode disposed on the surface layer and extending from above a portion of the contact region to above at least a portion of the drift region via above the channel region, and an insulating layer covering at least the portion of the contact region and not covering at least the portion of the drift region. The gate electrode and the contact region are insulated by the insulating layer, and the gate electrode and the drift region are in direct contact to form a Schottky junction. | 01-21-2010 |
20100038681 | TRANSISTOR - An HEMT type transistor is disclosed that is a normally off type, and in which variations in the gate threshold voltage are small. A transistor is provided with a p-type region, a barrier region, an insulation film, a gate electrode. The channel region is connected to an upper surface of the p-type region. The channel region is n-type or i-type and provided with a first channel region and a second channel region. The barrier region is forming a hetero-junction with an upper surface of the first channel region. The insulation film is connected to an upper surface of the second channel region and an upper surface of the barrier region. The gate electrode faces the second channel region and the barrier region via the insulation film. The first channel region and the second channel region are arranged in series in a current pathway. | 02-18-2010 |
20100044753 | SEMICONDUCTOR DEVICE - A nitride semiconductor device | 02-25-2010 |
20100295098 | III-V HEMT DEVICES - A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×10 | 11-25-2010 |
20110316049 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a vertical nitride semiconductor device in which occurrence of leak currents can be suppressed, and a method for manufacturing such nitride semiconductor device. A nitride semiconductor device, which is a vertical HEMT, is provided with an n | 12-29-2011 |
20120132927 | OHMIC ELECTRODE AND METHOD OF FORMING THE SAME - An ohmic electrode for a p-type SiC semiconductor, and a method of forming the ohmic electrode. The ohmic electrode has an ohmic electrode layer, which has an amorphous structure and which is made of a Ti | 05-31-2012 |
20120217639 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A manufacturing method of a semiconductor device including an electrode having low contact resistivity to a nitride semiconductor is provided. The manufacturing method includes a carbon containing layer forming step of forming a carbon containing layer containing carbon on a nitride semiconductor layer, and a titanium containing layer forming step of forming a titanium containing layer containing titanium on the carbon containing layer. A complete solid solution Ti (C, N) layer of TiN and TiC is formed between the titanium containing layer and the nitride semiconductor layer. As a result, the titanium containing layer comes to be in ohmic contact with the nitride semiconductor layer throughout the border therebetween. | 08-30-2012 |
20140175518 | III-V HEMT DEVICES - A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×10 | 06-26-2014 |
20140231827 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a semiconductor device includes forming an ohmic electrode in a first area on one of main surfaces of a silicon carbide layer, siliciding the ohmic electrode, and forming a Schottky electrode in a second area on the one of the main surfaces of the silicon carbide layer with self alignment. The second area is exposed where the ohmic electrode is not formed. | 08-21-2014 |
20140319540 | SEMICONDUCTOR DEVICE - A semiconductor device is provided with a semiconductor substrate in which a power semiconductor element part and a temperature sensing diode part are provided. The temperature sensing diode part includes a first semiconductor region, a second semiconductor region, a first base region, and a first drift region. In the semiconductor substrate, an isolation trench is formed, which passes through the first base region, extends to the first drift region, and surrounds an outer periphery of the temperature sensing diode part. At least a part of one of side walls of the isolation trench is in contact with the power semiconductor element part, and the other side wall of the isolation trench is in contact with the temperature sensing diode part. | 10-30-2014 |
20140319577 | SEMICONDUCTOR DEVICE - A semiconductor device disclosed in this specification includes a p+ contact region, an n+ source region, a p− base region, an n− drift region, a gate electrode, an insulator, a p+ electric field alleviating layer, and a p− positive hole extraction region. The electric field alleviating layer has same impurity concentration as the base region or higher, contacts a lower surface of the base region, and is formed in a same depth as the gate trench or in a position deeper than the gate trench. A positive hole extraction region extends to contact the electric field alleviating layer from a position to contact an upper surface of a semiconductor substrate or a first semiconductor region, and extracts a positive hole that is produced in the electric field alleviating layer at the avalanche breakdown to the upper surface of the semiconductor substrate. | 10-30-2014 |
20140339569 | SEMICONDUCTOR DEVICE - A semiconductor device formed on a silicon carbide substrate that has a front surface on which an electrode is provided and a back surface on which an electrode is provided includes a drain layer, a drift layer, a base layer, a gate electrode that is located in a trench that extends from the front surface into the drift layer and is insulated by an insulating film, a some layer, a buried layer that is provided between the drift layer and the base layer and is formed such that the depth from the front surface to an end thereof on the side of the drift layer is greater than the depth from the front surface to a distal end of the trench, and a first epitaxial layer that is provided between the buried layer and the base layer and has a higher impurity concentration than the buried layer. | 11-20-2014 |
Patent application number | Description | Published |
20110109689 | RECORDING APPARATUS - An apparatus includes a supply unit having a humidifying portion that supplies humidified gas near a nozzle array of a line-type recording head. In correspondence to displacement of the recording head in a direction of the nozzle array, at least one of an introducing direction and an introducing position of the supplied humidified gas can be changed. | 05-12-2011 |
20110109690 | RECORDING APPARATUS - A supply unit is provided to supply humidified gas near a nozzle array of a line-type recording head. The flow-rate distribution of the supplied humidified gas in a direction of the nozzle array is changeable in accordance with a conveying region where a sheet is conveyed while opposing the nozzle array. | 05-12-2011 |
20110109691 | RECORDING APPARATUS - An apparatus includes a recording head having a sealing portion arranged in proximity to nozzle arrays and protruding beyond a nozzle surface. A wiper unit configured to wipe the nozzle surface of the recording head has a first wiper blade and a second wiper blade, and the first wiper blade is arranged to be inclined by an angle θ | 05-12-2011 |
20110115846 | RECORDING APPARATUS - An apparatus includes a recording head arranged so as to oppose a sheet moving in a first direction, in which a plurality of first nozzle chips and a plurality of second nozzle chips each having a nozzle array are arranged as different arrays in a second direction crossing the first direction, and in which the first nozzle chips and the second nozzle chips adjacent to each other are shifted from each other in the second direction, a first suction unit opposed to the first nozzle chips and configured to suction ink from a part of the nozzle arrays included in the first nozzle chips, a second suction unit opposed to the second nozzle chips and configured to suction ink from a part of the nozzle arrays included in the second nozzle chips, a suction holder configured to retain the first suction unit and the second suction unit, and a movement mechanism configured to cause relative movement between the recording head and the suction holder in the second direction, wherein the first suction unit and the second suction unit are shifted from each other in the second direction in correspondence with the shift between the first nozzle chips and the second nozzle chips. | 05-19-2011 |
20110115863 | RECORDING APPARATUS - An apparatus includes a humidifying unit that generates humidified gas, a drying unit that dries ink applied to a sheet by a recording unit, a first duct that supplies gas discharged from the drying unit to at least one of the humidifying unit and the recording unit, and a second duct that supplies the humidified gas generated by the humidifying unit to the recording unit. | 05-19-2011 |
20110211018 | INKJET RECORDING APPARATUS AND METHOD FOR CONTROLLING IT - In order to efficiently perform preliminary ejection of ink at a bend of an ink circulation passage, the number of preliminary ejections of a nozzle group located on the outer side of the bend is set larger than the number of preliminary ejections of a nozzle group located in the middle of the bend. | 09-01-2011 |
20110254903 | PRINTING APPARATUS - Provided is a printing apparatus in which bubbles in a print head are easily removed. The printing apparatus includes a first one-way valve disposed between the pump and the ink tank in the collection channel, the first one-way valve allowing movement of ink from the pump to the ink tank and blocking movement of ink from the ink tank to the pump; a circulation channel that connects the ink tank to the collection channel at a position between the pump and the first one-way valve, the circulation channel enabling circulation of ink from the ink tank, through the print head, and to the ink tank; and a second one-way valve disposed in the circulation channel, the second one-way valve allowing movement of ink from the ink tank to the pump and blocking movement of ink from the pump to the ink tank. | 10-20-2011 |
20110273510 | PRINTING APPARATUS - A plurality of recording head units are supported by a holder in an integrated manner. The recording head units and pairs of rollers which hold a sheet are arranged alternately along a sheet conveying direction. An elastic member is disposed in a clearance between the holder and each of the recording head units supported by the holder in an elastically deformed manner to form an airtight seal. The airtight seal prevents upward leakage, from the clearance, of the humidifying gas introduced into the narrow space to which ink nozzles of the recording head units are exposed. | 11-10-2011 |
20110279525 | RECORDING APPARATUS - An apparatus includes a recording head having nozzle chips arranged in a staggered configuration along a second direction that intersects a first direction in which a sheet is conveyed, a first suction portion corresponding to a first row of nozzle chips in the staggered configuration, and a second suction portion corresponding to a second row of nozzle chips. The first suction portion and the second suction port are in a positional relationship in which they are displaced in the second direction so as to correspond to displacement between a first nozzle chip in the first row and its neighboring second nozzle chip in the second row in the second direction. The apparatus further includes a positioning member having a plurality of reference surfaces for use in positioning the recording head at different locations in a third direction that intersects the first direction and the second direction. | 11-17-2011 |
20110279541 | RECORDING APPARATUS - A holder that holds a line recording head is displaced in a sheet width direction against the urging force of an elastic portion to bring an abutment portion of the holder into contact with one of a plurality of positioning surfaces provided at a reference portion of a sheet conveying mechanism. The holder is positioned and fixed to the reference portion, with the urging force exerted thereto. | 11-17-2011 |
20130100198 | PRINTING APPARATUS AND PRINTING METHOD - A printing apparatus includes a cooling unit configured to actively cool a sheet, a humidification unit configured to increase a moisture content of the sheet by supplying a humidified gas onto the sheet, and an inkjet print head configured to perform printing on the sheet having a moisture content increased by the humidification unit. | 04-25-2013 |
20130106929 | INKJET RECORDING APPARATUS | 05-02-2013 |
20140307020 | PRINTING APPARATUS AND PRINTING METHOD - In the case of performing duplex printing on a continuous sheet, by setting a length of a non-image area to an optimum length, both of mark detection having high reliability and the suppression of a sheet consumption amount are achieved. For this purpose, when duplex printing of a plurality of images on front and back surfaces of the continuous sheet is performed, on the basis of a length of the image to be printed precedently to a non-image area W | 10-16-2014 |
Patent application number | Description | Published |
20110203513 | METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - In a method of manufacturing a silicon carbide substrate, a defect-containing substrate made of silicon carbide is prepared. The defect-containing substrate has a front surface, a rear surface being opposite to the front surface, and a surface portion adjacent to the front surface. The detect-containing substrate includes a screw dislocation in the surface portion. The front surface of the defect-containing substrate is applied with an external force so that a crystallinity of the surface portion is reduced. After being applied with the external force, the defect-containing substrate is thermally treated so that the crystallinity of the surface portion is recovered. | 08-25-2011 |
20110291110 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench. | 12-01-2011 |
20110309464 | SEMICONDUCTOR DEVICE INCLUDING CELL REGION AND PERIPHERAL REGION HAVING HIGH BREAKDOWN VOLTAGE STRUCTURE - A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer. | 12-22-2011 |
20120012860 | SIC SEMICONDUCTOR DEVICE - A SiC semiconductor device includes a reverse type MOSFET having: a substrate; a drift layer and a base region on the substrate; a base contact layer and a source region on the base region; multiple trenches having a longitudinal direction in a first direction penetrating the source region and the base region; a gate electrode in each trench via a gate insulation film; an interlayer insulation film covering the gate electrode and having a contact hole, through which the source region and the base contact layer are exposed; a source electrode coupling with the source region and the base region through the contact hole; a drain electrode on the substrate. The source region and the base contact layer extend along with a second direction perpendicular to the first direction, and are alternately arranged along with the first direction. The contact hole has a longitudinal direction in the first direction. | 01-19-2012 |
20120061682 | SIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A SiC semiconductor device includes: a substrate, a drift layer, and a base region stacked in this order; first and second source regions and a contact layer in the base region; a trench penetrating the source and base regions; a gate electrode in the trench; an interlayer insulation film with a contact hole covering the gate electrode; a source electrode coupling with the source region and the contact layer via the contact hole; a drain electrode on the substrate; and a metal silicide film. The high concentration second source region is shallower than the low concentration first source region, and has a part covered with the interlayer insulation film, which includes a low concentration first portion near a surface and a high concentration second portion deeper than the first portion. The metal silicide film on the second part has a thickness larger than the first portion. | 03-15-2012 |
20120142173 | MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL - A manufacturing method of an SiC single crystal includes preparing an SiC substrate, implanting ions into a surface portion of the SiC substrate to form an ion implantation layer, activating the ions implanted into the surface portion of the SiC substrate by annealing, chemically etching the surface portion of the SiC substrate to form an etch pit that is caused by a threading screw dislocation included in the SiC substrate and performing an epitaxial growth of SiC to form an SiC growth layer on a surface of the SiC substrate including an inner wall of the etch pit in such a manner that portions of the SiC growth layer grown on the inner wall of the etch pit join with each other. | 06-07-2012 |
20120161154 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - An SiC semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate oxide film, a gate electrode, a source electrode and a drain electrode. The substrate has a Si-face as a main surface. The source region has the Si-face. The trench is provided from a surface of the source region to a portion deeper than the base region and extends longitudinally in one direction and has a Si-face bottom. The trench has an inverse tapered shape, which has a smaller width at an entrance portion than at a bottom, at least at a portion that is in contact with the base region. | 06-28-2012 |
20120181551 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate and a trench. The silicon carbide semiconductor substrate has an offset angle with respect to a ( | 07-19-2012 |
20120273801 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A SiC semiconductor device includes: a SiC substrate including a first or second conductive type layer and a first conductive type drift layer and including a principal surface having an offset direction; a trench disposed on the drift layer and having a longitudinal direction; and a gate electrode disposed in the trench via a gate insulation film. A sidewall of the trench provides a channel formation surface. The vertical semiconductor device flows current along with the channel formation surface of the trench according to a gate voltage applied to the gate electrode. The offset direction of the SiC substrate is perpendicular to the longitudinal direction of the trench. | 11-01-2012 |
20120319136 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A SiC device includes an inversion type MOSFET having: a substrate, a drift layer, and a base region stacked in this order; source and contact regions in upper portions of the base region; a trench penetrating the source and base regions; a gate electrode on a gate insulating film in the trench; a source electrode coupled with the source and base region; a drain electrode on a back of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has an impurity concentration distribution in a depth direction, and an inversion layer is provided in a portion of the deep layer on the side of the trench under application of the gate voltage. | 12-20-2012 |
20130001592 | SILICON CARBIDE SEMICONDUCTOR DEVICE - In a silicon carbide semiconductor device, a plurality of trenches has a longitudinal direction in one direction and is arranged in a stripe pattern. Each of the trenches has first and second sidewalls extending in the longitudinal direction. The first sidewall is at a first acute angle to one of a (11-20) plane and a (1-100) plane, the second sidewall is at a second acute angle to the one of the (11-20) plane and the (1-100) plane, and the first acute angle is smaller than the second acute angle. A first conductivity type region is in contact with only the first sidewall in the first and second sidewalls of each of the trenches, and a current path is formed on only the first sidewall in the first and second sidewalls. | 01-03-2013 |
20130330896 | MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening. | 12-12-2013 |
20140175459 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A SiC semiconductor device includes: a semiconductor switching element having: a substrate, a drift layer and a base region stacked in this order; a source region and a contact region in the base region; a trench extending from a surface of the source region to penetrate the base region; a gate electrode on a gate insulating film in the trench; a source electrode electrically coupled with the source region and the base region; a drain electrode on a back side of the substrate; and multiple deep layers in an upper portion of the drift layer deeper than the trench. Each deep layer has upper and lower portions. A width of the upper portion is smaller than the lower portion. | 06-26-2014 |
20150115286 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p | 04-30-2015 |
Patent application number | Description | Published |
20110256561 | LIVER DISEASE MARKER, METHOD AND APPARATUS FOR MEASURING THE SAME, AND METHOD FOR ASSAYING PHARMACEUTICAL PREPARATION - A normal person (i.e. a control) and liver diseases such as drug induced liver injury, an asymptomatic hepatitis B carrier, an asymptomatic hepatitis C carrier, chronic hepatitis B, chronic hepatitis C, liver cancer, a nonalcoholic fatty liver disease (NAFLD), nonalcoholic steatohepatitis (NASH), and simple steatosis (SS) are identified by measuring the concentrations of γ-Glu-X (X represents an amino acid or an amine) peptides or the levels of AST or ALT in blood and carrying out, for example, a multiple logistic regression based on the measured value. | 10-20-2011 |
20130116148 | LIVER DISEASE MARKER, METHOD AND APPARATUS FOR MEASURING THE SAME, AND METHOD FOR ASSAYING PHARMACEUTICAL PREPARATION - Disclosed is a method for promptly identifying a liver disease. A normal person or a liver disease such as drug-induced liver injury, asymptomatic hepatitis B carrier, chronic hepatitis B, hepatitis C with persistently normal ALT, chronic hepatitis C, cirrhosis type C, hepatocellular carcinoma, simple steatosis, or non-alcoholic steatohepatitis is identified by measuring the concentration of a γ-Glu-X (wherein X represents an amino acid or an amine) peptide or the level of AST or ALT in blood and carrying out, for example, a multiple logistic regression based on the measured value. | 05-09-2013 |
20130330749 | METHOD AND APPARATUS FOR DETECTING LIVER DISEASE, AND METHOD FOR ASSAYING PHARMACEUTICAL PREPARATION - A normal person (i.e. a control) and liver diseases such as drug induced liver injury, an asymptomatic hepatitis B carrier, an asymptomatic hepatitis C carrier, chronic hepatitis B, chronic hepatitis C, liver cancer, a nonalcoholic fatty liver disease (NAFLD), nonalcoholic steatohepatitis (NASH), and simple steatosis (SS) are identified by measuring the concentrations of γ-Glu-X (X represents an amino acid or an amine) peptides or the levels of AST or ALT in blood and carrying out, for example, a multiple logistic regression based on the measured value. | 12-12-2013 |