Patent application number | Description | Published |
20080198464 | Shake reduction apparatus - Herein disclosed is a shake reduction apparatus, comprising a movable-side unit having a movable-side frame provided with a camera unit including a lens and an image sensor, and a movable-side shaft having a spherical surface as an extremity surface thereof; a stationary-side unit having a stationary-side frame provided with a stationary-side shaft having an extremity formed as a spherical surface coming into contact with the extremity of the movable-side shaft, to which the movable-side unit is attached; linear actuators disposed between the movable-side frame and the stationary-side frame to drive the movable-side unit to rotate about two orthogonal axes; a movement detection unit for detecting a movement of a camera about the two orthogonal axes; and a controller for controlling the linear actuators to cause the movable-side unit to move so as to cancel the movement of the camera when the movement detection unit detects the movement of the camera. | 08-21-2008 |
20090050787 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a photoelectric conversion area in which a plurality of photoelectric conversion elements are arranged to convert incident light into electric charges, a plurality of amplifying units are arranged to read and supply signals based on the electric charges of corresponding photoelectric conversion elements to output lines, a plurality of transfer units are arranged to transfer the electric charges of the corresponding photoelectric conversion elements to input units for corresponding amplifying units, and a plurality of voltage supply units are arranged to supply to corresponding input units voltages for setting the corresponding input units to have first and second potentials are disposed two-dimensionally, and a plurality of voltage supply control units are arranged to supply a voltage to corresponding voltage supply units of the plurality of voltage supply units. | 02-26-2009 |
20090139810 | ROTARY DAMPER - A rotary damper is provided and includes: a housing; an annular ring member that is provided in the housing, and is made of elastomer or flexible rubber; a shaft body that is accommodated in a rotatable manner in the housing; and a sliding portion that is provided in the housing and makes contact with the ring member so as to freely slide with respect to the ring member along the circumferential direction thereof, in which: the ring member has an abutting portion that abuts the sliding portion, and a hollow portion provided inside the ring member; the hollow portion has an opening portion on the side opposite to the abutting portion; in the state of having enclosed gas in the hollow portion, the opening portion is hermetically joined to the inner surface of the housing; a projected portion that engages with the opening portion of the hollow portion is provided on the inner surface of the housing; and a pressing member that presses the ring member toward the inner surface of the housing is provided on the inner side and/or outer side of the ring member in the radial direction. | 06-04-2009 |
20090256176 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to the fifth semiconductor region. | 10-15-2009 |
20090303364 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises first accumulation units, of which number is n, holding a digital value of n-bits output from a counter, second accumulation units, of which number is n, holding the digital value of n-bits transferred from the first accumulation units, of which number is n, and an A/D converter writing the digital value of n-bits from the counter based on an image signal generated by pixels into the first accumulation units, of which number is n, wherein correspondingly to each column of the pixels, the first accumulation unit of m-th bit (1≦m≦n) and the second accumulation unit of m-th bit (1≦m≦n) are arranged and paired, and the pairs of which number is n are arranged in a direction along the column of pixels. | 12-10-2009 |
20100289931 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a plurality of pixels for converting analog image signals from the pixels into digital signals including a higher digit bit and a lower digit bit in time series. The A/D converter includes a first holding unit for holding the higher digit bit of the digital signal, a second holding unit for holding the lower digit bit of the digital signal, a third holding unit for holding the digital signal from the first holding unit, and a fourth holding unit for holding the digital signal from the second holding unit. A first pair including the first and third holding units, and a second pair including the second and fourth holding units are arranged in a direction along the column of the two-dimensional array of pixels. | 11-18-2010 |
20100328302 | SOLID-STATE IMAGING APPARATUS AND DRIVING METHOD THEREOF - A solid-state imaging apparatus includes the carrier holding portion and the amplifying portion in each pixel, wherein a first voltage supplied to a transfer electrode when the transfer portion for transferring carriers from the carrier holding portion to the amplifying portion is placed in a non-conducting state is opposite in polarity to a voltage supplied to the transfer electrode during the turning on period of the transfer portion, and a second voltage supplied to the control electrode of the carrier holding portion during a holding period in which the carriers are retained in the carrier holding portion is the same in polarity as the first voltage and is larger in absolute value than the first voltage. | 12-30-2010 |
20110007113 | INKJET PRINTING APPARATUS - An inkjet printing apparatus which enables printing with high print quality is provided. For that purpose, a pair of airflow guides are provided at intermediate positions between each adjacent two of the printing heads arrayed in a travelling direction of a carriage, the pair of the airflow guides respectively located right and left in a direction perpendicular to the travelling direction of the carriage. | 01-13-2011 |
20110007196 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion. | 01-13-2011 |
20110032379 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors. | 02-10-2011 |
20110084316 | PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A pickup device according to the present invention includes a photoelectric conversion portion, a charge holding portion configured to include a first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. A second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A third semiconductor region is disposed below the second semiconductor region. An impurity concentration of the third semiconductor region is higher than the impurity concentration of the first semiconductor region. | 04-14-2011 |
20110168872 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus, controlling a potential on a semiconductor substrate for an electronic shutter operation, includes: a first semiconductor region of the first conductivity type for forming a photoelectric conversion region; a second semiconductor region of the first conductivity type, formed separately from the photoelectric conversion region, for accumulating carriers; a third semiconductor region of a second conductivity type arranged under the second semiconductor region, for operating as a potential barrier; a fourth semiconductor region of the second conductivity type extending between the first semiconductor region and the semiconductor substrate, and between the third semiconductor region and the semiconductor substrate; and a first voltage supply portion for supplying a voltage to the third semiconductor region; wherein the first voltage supply portion includes a fifth semiconductor region of the second conductivity type arranged in the pixel region, and a first electrode connected to the fifth semiconductor region. | 07-14-2011 |
20110175151 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE PICKUP SYSTEM USING PHOTOELECTRIC CONVERSION APPARATUS - A photoelectric conversion apparatus includes a plurality of photoelectric conversion elements configured to convert incident light to electric carriers, an amplifier MOS transistor shared by the plurality of photoelectric conversion elements, a plurality of floating diffusions connected to the gate electrode of the amplifier MOS transistor, and a plurality of transfer MOS transistors arranged corresponding to the respective photoelectric conversion elements, each of the transfer MOS transistors transferring electric carriers from corresponding one of the photoelectric conversion elements to corresponding one of the floating diffusions. In such a photoelectric conversion apparatus, at least two of the floating diffusions are electrically connected to each other with a wiring line included in the same wiring layer as the gate electrode of the amplifier MOS transistor. | 07-21-2011 |
20120006975 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus comprises first accumulation units, of which number is n, holding a digital value of n-bits output from a counter, second accumulation units, of which number is n, holding the digital value of n-bits transferred from the first accumulation units, of which number is n, and an A/D converter writing the digital value of n-bits from the counter based on an image signal generated by pixels into the first accumulation units, of which number is n, wherein correspondingly to each column of the pixels, the first accumulation unit of m-th bit (1≦m≦n) and the second accumulation unit of m-th bit (1≦m≦n) are arranged and paired, and the pairs of which number is n are arranged in a direction along the column of pixels. | 01-12-2012 |
20120087778 | MACHINE UNIT LAYOUT SYSTEM - Provided is a machine unit layout system that simplifies the layout of a compressor unit and an expander unit and is extremely effective in terms of not only the reliability of the entire machine but also maintainability. Two separate compressors, a low-pressure-side compressor and a high-pressure-side compressor ( | 04-12-2012 |
20120107108 | RADIAL GAS EXPANDER - Provided is a uni-axial multi-stage radial gas expander which has a high degree of reliability and which can sufficiently cope with the conditions of a high pressure and a high pressure ratio. Two or more radial gas expander sections ( | 05-03-2012 |
20120193745 | SOLID-STATE IMAGE PICKUP DEVICE - A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region. | 08-02-2012 |
20120199883 | SOLID-STATE IMAGE PICKUP DEVICE - An N-type semiconductor region and a floating diffusion region are disposed in an active region. A transfer gate electrode for transferring charges from a PD to an FD is disposed on a semiconductor substrate through an insulator. A part of the N-type semiconductor region constituting the PD and a part of the transfer gate electrode are overlapped with each other. A P-type semiconductor region is disposed in the active region. The P-type semiconductor region and the portion overlapped with the transfer gate electrode of the N-type semiconductor region are disposed adjacent to each other in the direction parallel to the interface of the semiconductor substrate and the insulator. The position of the impurity concentration peak of the N-type semiconductor region and the position of the impurity concentration peak of the P-type semiconductor region are different from each other in depth. | 08-09-2012 |
20120199927 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MAKING THE SAME - A solid-state image pickup device includes a semiconductor substrate in which photoelectric conversion units are arranged. An insulator is disposed on the semiconductor substrate. The insulator has holes associated with the respective photoelectric conversion units. Members are arranged in the respective holes. A light-shielding member is disposed on the opposite side of one of the members from the semiconductor substrate, such that only the associated photoelectric conversion unit is shielded from light. In the solid-state image pickup device, the holes are simultaneously formed and the members are simultaneously formed. | 08-09-2012 |
20120199933 | SOLID-STATE IMAGE PICKUP DEVICE - A solid-state image pickup device includes a plurality of pixels, each of the pixels including a photoelectric conversion portion, a charge holding portion, a floating diffusion, and a transfer portion. The pixel also includes a beneath-holding-portion isolation layer and a pixel isolation layer. An end portion on a photoelectric conversion portion side of the pixel isolation layer is away from the photoelectric conversion portion compared to an end portion on a photoelectric conversion portion side of the beneath-holding-portion isolation layer, and an N-type semi-conductor region constituting part of the photoelectric conversion portion is disposed under at least part of the beneath-holding-portion isolation layer. | 08-09-2012 |
20120199934 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state image pickup device includes a photoelectric conversion portion, a charge holding portion configured to include a first-conductivity-type first semiconductor region, and a transfer portion configured to include a transfer gate electrode that controls a potential between the charge holding portion and a sense node. The charge holding portion includes a control electrode. A second-conductivity-type second semiconductor region is disposed on a surface of a semiconductor region between the control electrode and the transfer gate electrode. A first-conductivity-type third semiconductor region is disposed under the second semiconductor region. The third semiconductor region is disposed at a deeper position than the first semiconductor region. | 08-09-2012 |
20120200728 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGE SENSING SYSTEM - A photoelectric conversion apparatus at least includes an insulating film, a plurality of high-refractive-index members provided so as to correspond respectively to individual photoelectric conversion portions, being surrounded by the insulating film and having a refractive index higher than the refractive index of the insulating film, and a high-refractive-index film provided on the insulating film so as to connect the plurality of high-refractive-index members to one another and having a refractive index higher than the refractive index of the insulating film, and lens portions lying next to each other from among a plurality of lens portions border each other. | 08-09-2012 |
20120217378 | SOLID-STATE IMAGING APPARATUS - A solid-state imaging apparatus includes a plurality of pixels for converting analog image signals from the pixels into digital signals including a higher digit bit and a lower digit bit in time series. The A/D converter includes a first holding unit for holding the higher digit bit of the digital signal, a second holding unit for holding the lower digit bit of the digital signal, a third holding unit for holding the digital signal from the first holding unit, and a fourth holding unit for holding the digital signal from the second holding unit. A first pair including the first and third holding units, and a second pair including the second and fourth holding units are arranged in a direction along the column of the two-dimensional array of pixels. | 08-30-2012 |
20120261782 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING THE SAME - The present invention provides a solid-state image pickup device that includes a plurality of photoelectric conversion units disposed in a semiconductor substrate, a first planarizing layer disposed at a first principal surface side of the semiconductor substrate where light enters, a color filter layer disposed on the first planarizing layer and including color filters each of which is provided for a corresponding photoelectric conversion unit, and a second planarizing layer disposed on the color filter layer for reducing a level difference between the color filters. In the solid-state image pickup device, a gap is disposed in a position corresponding to a boundary between the neighboring color filters in the color filter layer, the gap extending to the second planarizing layer, and a sealing layer for sealing the gap is disposed on the gap and the second planarizing layer. | 10-18-2012 |
20120267747 | SOLID-STATE IMAGE PICKUP DEVICE AND METHOD FOR MANUFACTURING THE SAME - A solid-state image pickup device according to the present invention is a backside-illuminated solid-state image pickup device that includes a plurality of pixels each having a photoelectric conversion portion. A p-type semiconductor region | 10-25-2012 |
20120300106 | SOLID-STATE IMAGE PICKUP APPARATUS, AND IMAGE PICKUP SYSTEM USING SOLID-STATE IMAGE PICKUP APPARATUS - A solid-state image pickup apparatus includes a photoelectric conversion unit, a charge storage unit, and a floating diffusion unit, all disposed on a semiconductor substrate. The solid-state image pickup apparatus further includes a first gate electrode disposed on the semiconductor substrate and extending between the photoelectric conversion unit and charge storage unit, and a second gate electrode disposed on the semiconductor substrate and extending between the charge storage unit and the floating diffusion unit. The solid-state image pickup apparatus further includes a light shielding member including a first part and a second part, wherein the first part is disposed over the charge storage unit and at least over the first gate electrode or the second gate electrode, and the second part is disposed between the first gate electrode and the second gate electrode such that the second part extends from the first part toward a surface of the semiconductor substrate. | 11-29-2012 |
20130082343 | PHOTOELECTRIC CONVERSION DEVICE, METHOD OF MANUFACTURING THE SAME AND PHOTOELECTRIC CONVERSION SYSTEM - One of disclosed embodiments provides a photoelectric conversion device, comprising a member including a first surface configured to receive light, and a second surface opposite to the first surface, and a plurality of photoelectric conversion portions aligned inside the member in a depth direction from the first surface, wherein at least one of the plurality of photoelectric conversion portions other than the photoelectric conversion portion positioned closest to the first surface includes, on a boundary surface thereof with the member, unevenness having a difference in level larger than a difference in level of unevenness of the photoelectric conversion portion positioned closest to the first surface, and wherein the boundary surface having the unevenness is configured to localize or resonate light incident on the member from a side of the first surface around the boundary surface having the unevenness. | 04-04-2013 |
20130087875 | PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM - In a photoelectric conversion device capable of adding signals of photoelectric conversion elements included in each of photoelectric conversion units, each of the photoelectric conversion elements includes a first semiconductor region of a first conductivity type for collecting a signal charge, a second semiconductor region of a second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other and included in the photoelectric conversion unit, and a third semiconductor region of the second conductivity type is arranged between the photoelectric conversion elements arranged adjacent to each other among the plurality of photoelectric conversion elements and included in different photoelectric conversion units arranged adjacent to each other. An impurity concentration of the second semiconductor region is lower than an impurity concentration of the third semiconductor region. | 04-11-2013 |
20130099098 | SOLID-STATE IMAGING DEVICE, MEMBERS FOR THE SAME, AND IMAGING SYSTEM - The present invention provides a solid-state imaging device including a pad capable of reducing inferior connection with an external terminal. The solid-state imaging device includes a first substrate provided, on its front face, with photoelectric conversion elements, a first wiring structure, a second substrate provided, on its front face, with at least a part of peripheral circuits, and a second wiring structure. The first substrate, the first wiring structure, the second wiring structure, and the second substrate are provided in this order. The first wiring structure includes a wiring layer including wirings made mainly of copper. The second wiring structure includes a wiring layer including wirings made mainly of copper. Wirings made mainly of copper in the wiring layer in the first wiring structure are bonded with wirings made mainly of copper in the wiring layer in the second wiring structure. The solid-state imaging device includes a pad formed of a conductive element made mainly of aluminum. | 04-25-2013 |
20130105667 | SOLID-STATE IMAGING APPARATUS AND METHOD FOR MANUFACTURING THE SOLID-STATE IMAGING APPARATUS | 05-02-2013 |
20130105924 | SOLID-STATE IMAGING APPARATUS AND MANUFACTURING METHOD OF SOLID-STATE IMAGING APPARATUS | 05-02-2013 |
20130105931 | SOLID-STATE IMAGING APPARATUS | 05-02-2013 |
20130107075 | SOLID-STATE IMAGING DEVICE AND IMAGING SYSTEM | 05-02-2013 |
20130181309 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - An image pickup apparatus includes photoelectric conversion units each including a first semiconductor region of a first conductivity type and a semiconductor region of a second conductivity type disposed in contact with the first semiconductor region, a potential barrier formed between photoelectric conversion units, and a contact plug disposed in an image sensing area. The number of contact plugs is smaller than the number of photoelectric conversion units. The photoelectric conversion units include first and second photoelectric conversion units and are arranged such that at least two first photoelectric conversion units are adjacent in a first direction. The potential barrier includes a first part formed between the two first photoelectric conversion units disposed adjacently and a second part formed between first and second photoelectric conversion units adjacent to each other. The contact plug is located closer to the first part than to the second part. | 07-18-2013 |
20130182158 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - In a photoelectric conversion apparatus that adds signals of a plurality of photoelectric conversion elements included in photoelectric conversion units, each of the plurality of photoelectric conversion elements includes a first semiconductor region of a first conductivity type that collects signal carriers. The first semiconductor regions included in photoelectric conversion elements that are included in each of the photoelectric conversion units and that are arranged adjacent to each other sandwich a second semiconductor region of a second conductivity type. A height of a potential barrier for the signal carriers generated in a certain region of the second semiconductor region is smaller than a height of a potential barrier for the signal carriers generated in a third semiconductor region between each of the first semiconductor regions and an overflow drain region of the first conductivity type. | 07-18-2013 |
20130182159 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - An image pickup apparatus according to one or more embodiments includes a power line and first through fourth photodiodes. The first, second, and third photodiodes are arranged along a first direction so that the first photodiode is adjacent to the second photodiode, and the second photodiode is adjacent to the third photodiode. The power line includes a first conductor disposed along the first direction and a second conductor disposed along a second direction that intersects the first direction. The second conductor is disposed on a region between the second and third photodiodes. First and second transistors corresponding to the first and second photodiode, respectively, are connected to the power line. The fourth photodiode is disposed adjacent to the second photodiode in the second direction. A third transistor corresponding to the fourth photodiode is connected to the power line. | 07-18-2013 |
20130182163 | SOLID-STATE IMAGE SENSOR - A solid-state image sensor comprising a pixel array in which a plurality of pixels are arrayed in a matrix having a plurality of rows and a plurality of columns, wherein the pixel array includes a first wiring layer and a second wiring layer arranged above the first wiring layer, the first wiring layer includes first column signal lines arranged at the respective columns of the pixel array, and the second wiring layer includes second column signal lines arranged at the respective columns of the pixel array. | 07-18-2013 |
20130187210 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM USING THE SAME - In a photoelectric conversion apparatus including charge storing portions in its imaging region, isolation regions for the charge storing portions include first isolation portion each having a PN junction, and second isolation portions each having an insulator. A second isolation portion is arranged between a charge storing portion and at least a part of a plurality of transistors. | 07-25-2013 |
20130206964 | SOLID-STATE IMAGING APPARATUS WITH EACH PIXEL INCLUDING A PHOTOELECTRIC CONVERSION PORTION AND PLURAL HOLDING PORTIONS - A solid-state imaging apparatus including a plurality of pixels each including: a first holding portion for holding signal carriers from a photoelectric conversion portion; an amplifying portion for amplifying and reading a signal based on the signal carriers generated in the photoelectric conversion portion; and a carrier discharging control portion for discharging charge carriers in the photoelectric conversion portion to an OFD region, and having a carrier path between the photoelectric conversion portion and the first carrier holding portion, in which the solid-state imaging apparatus further includes a second carrier holding portion electrically connected with the first carrier portion in parallel through a first transfer unit, when viewed from an output node of the photoelectric conversion portion, thereby smoothing an movie imaging without causing discontinuous frame while suppressing generation of noise mixing into the charge carrier holding portion. | 08-15-2013 |
20130214126 | IMAGE PICKUP APPARATUS - An image pickup apparatus includes a plurality of pixels each including a photoelectric conversion unit, an amplification element configured to amplify a signal based on a signal charge generated in the photoelectric conversion unit, and a first signal holding unit and a second signal holding unit located at a stage following the first signal holding unit and arranged on an electric path between the photoelectric conversion unit and an input node of the amplification element, in which a coverage by a light-shielding member of the first signal holding unit is lower than a coverage by a light-shielding member of the second signal holding unit. | 08-22-2013 |
20130214128 | IMAGING APPARATUS - An imaging apparatus includes: a plurality of pixels each including a photoelectric conversion unit, and an amplification element to amplify signals based on signal charges generated by the photoelectric conversion unit, in which the plurality of pixels output signals for performing a phase contrast detection type of focal point detection; and a signal holding unit in an electrical pathway between an output node of the photoelectric conversion unit and an input node of the amplification element, in which signals for performing the phase contrast detection type of focal point detection are held. | 08-22-2013 |
20130214129 | IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM, AND IMAGE PICKUP APPARATUS DRIVING METHOD - Each of multiple pixels includes a photoelectric conversion unit. A first holding unit is configured to hold a charge generated by the photoelectric conversion unit, at a location different from location of the photoelectric conversion unit. A second holding unit is configured to hold a charge held by the first holding unit at a location different from locations of both of the first holding unit and the photoelectric conversion unit. An amplifying unit includes an input node different from the second holding unit and is configured to output a signal based on a charge transferred to the input node from the second holding unit. A first discharge unit includes a charge draining node which is electrically connected to a line where a predetermined voltage is supplied. The first discharge unit discharges a charge held by the first holding unit to the charge draining node. | 08-22-2013 |
20130215287 | IMAGE PICKUP APPARATUS, IMAGE PICKUP SYSTEM, AND IMAGE PICKUP APPARATUS MANUFACTURING METHOD - An image pickup apparatus includes a semiconductor substrate, and multiple pixels. Each of the multiple pixels includes a photoelectric-conversion unit disposed in the semiconductor substrate, a first conductive first semiconductor region disposed in the semiconductor substrate, which holds charge generated by the photoelectric-conversion unit at a place different from the photoelectric-conversion unit, a first transfer unit which transfers charge to the first semiconductor region, and a second transfer unit which transfers charge held at the first semiconductor region. The first semiconductor region includes a first portion, a second portion, and a third portion. At the depth where the third portion is disposed, the first portion is disposed between the third portion and first transfer unit, and the second portion is disposed between the third portion and second transfer unit. Impurity concentration of the third portion is lower than that of the first and second portions. | 08-22-2013 |
20130215300 | IMAGE PICKUP DEVICE - The present invention includes a photoelectric conversion unit, an amplifying element, a signal holding portion, and a charge transfer portion. The photoelectric conversion unit includes a first-conductivity-type first semiconductor region and a second-conductivity-type second semiconductor region. The signal holding portion includes a first-conductivity-type third semiconductor region and a control electrode disposed above the third semiconductor region via an insulator film. The second semiconductor region has a plurality of regions disposed at different depths. The plurality of regions has a first region that forms a PN junction with the first semiconductor region, a second region disposed at a position deeper than the first region, and a third region disposed between the first region and the second region. The impurity concentration peak P | 08-22-2013 |
20130215304 | IMAGE PICKUP APPARATUS AND METHOD OF DRIVING THE SAME - An image pickup apparatus includes pixels each including a photoelectric conversion unit, an amplifying element, a first signal holding unit and a second signal holding unit both disposed in an electric path between the photoelectric conversion unit and an input node of the amplifying element, a first charge transfer unit configured to transfer electrons from the photoelectric conversion unit to the first signal holding unit, and a second charge transfer unit configured to transfer electrons from the first signal holding unit to the second signal holding unit. Voltage are set such that a voltage supplied to the first control electrode when the electrons are transferred from the photoelectric conversion unit to the first signal holding unit is lower than a voltage supplied to the second control electrode when the electrons held by the first signal holding unit are transferred to the second signal holding unit. | 08-22-2013 |
20130215305 | IMAGE PICKUP APPARATUS AND IMAGE PICKUP SYSTEM - One or more embodiments relate to an image pickup apparatus including multiple pixels. Each of the multiple pixels includes a photoelectric-conversion unit, and an amplifier which outputs a signal based on charge generated by the photoelectric-conversion unit. Within an electric path between the photoelectric-conversion unit and an input node of the amplifier, there are disposed a first holder, a second holder disposed following the first holder, a first transfer unit which transfers charge to the first holder, a second transfer unit which transfers charge of the first holder to the second holder, and a third transfer unit which transfers charge of the second holder. The first holder includes a first-conductive-type first semiconductor region holding charge. The second holder includes a first-conductive-type second semiconductor region holding charge. Impurity concentration of the first semiconductor region is lower than impurity concentration of the second semiconductor region. | 08-22-2013 |
20140061436 | SOLID STATE IMAGING DEVICE - A solid state imaging device includes: first and second photoelectric conversion units to generate charges; a isolation portion to isolate the photoelectric conversion units; first and second floating diffusions; first and second transfer transistors to transfer the generated charges to the floating diffusions; one or two transfer control lines to supply transfer pulses to the transfer transistors; one or two contacts to connect gates of the transfer transistors with the transfer control lines, wherein: the first and second transfer transistors are symmetrical with respect to the isolation portion; the contacts are symmetrical with respect to the isolation portion; values of parasitic capacitance and resistance of paths in which the transfer pulses are supplied from the transfer control lines to (i) the first and (ii) the second transfer transistors are equal; and a focus detection is performed using signals based on charges generated in the photoelectric conversion units. | 03-06-2014 |
20140098318 | LIQUID CRYSTAL DISPLAY DEVICE - Reduction in the reliability of a seal portion is prevented. The reduction is caused by a light shielding portion formed on the seal portion of a TFT substrate to hamper curing an ultraviolet curable sealing material. A sealing material has a two-layer structure of an ultraviolet curable sealing material that is an inner sealing material and a thermosetting and ultraviolet curable sealing material or a thermosetting sealing material that is an outer sealing material. A light shielding portion is formed on a TFT substrate under the outer sealing material, and is not formed on the TFT substrate under the inner sealing material. When ultraviolet rays are applied from the TFT substrate side, the inner sealing material is cured in a short time. The outer sealing material is then cured by heating. Thus, the overall seal portion can be sufficiently cured, and a highly reliable seal portion can be formed. | 04-10-2014 |
20140299746 | PHOTOELECTRIC CONVERSION APPARATUS AND IMAGING SYSTEM - A photoelectric conversion unit has first semiconductor regions and a second semiconductor region that is disposed between the first semiconductor regions being adjacently disposed in the unit. Impurity concentration profile in a depth direction of the first and semiconductor regions has a plurality of peaks. The impurity concentration peaks of the first semiconductor region include a first impurity concentration peak and a second impurity concentration peak being lower than the first impurity concentration peak. The impurity concentration peaks of the second semiconductor region include a third, a fourth, and a fifth impurity concentration peak. The fourth impurity concentration peak is higher than the third impurity concentration peak, and a fifth impurity concentration peak is higher than the third impurity concentration peak. The depth of the third impurity concentration peak is closer to the depth of the second impurity concentration peak than that of the first impurity concentration peak. | 10-09-2014 |
20140300786 | SOLID-STATE IMAGE SENSOR AND CAMERA - An image sensor including a first semiconductor region of a first conductivity type that is arranged in a substrate, a second semiconductor region of a second conductivity type that is arranged in the first semiconductor region to form a charge accumulation region. The second semiconductor region includes a plurality of portions arranged in a direction along a surface of the substrate. A potential barrier is formed between the plurality of portions. The second semiconductor region is wholly depleted by expansion of a depletion region from the first semiconductor region to the second semiconductor region. A finally-depleted portion to be finally depleted, of the second semiconductor region, is depleted by the expansion of the depletion region from a portion of the first semiconductor region, located in a lateral direction of the finally-depleted portion. | 10-09-2014 |
20140319321 | IMAGING APPARATUS AND IMAGING SYSTEM - One embodiment is an imaging apparatus including multiple pixels. The pixels include first and second photoelectric conversion units, a floating diffusion portion, and first and second transfer transistors configured to transfer electric carriers generated at the respective first and second photoelectric conversion units to the floating diffusion portion. The imaging apparatus includes a first conductive member electrically connected to the gate electrode of the first transfer transistor, a second conductive member electrically connected to the gate electrode of the second transfer transistor, and a control unit. The distance of closest proximity between the first conductive member and the floating diffusion portion is shorter than distance of closest proximity between the second conductive member and the floating diffusion portion. | 10-30-2014 |
20140320690 | IMAGING APPARATUS AND IMAGING SYSTEM - One embodiment according to the present invention is an imaging apparatus including a pixel. The pixel includes first and second photoelectric conversion units, a floating diffusion portion, and first and second transfer transistors. The first and second transfer transistors are configured to transfer electric carriers generated respectively at the first and second photoelectric conversion units to the floating diffusion portion. The imaging apparatus includes a first conductive member electrically connected to the gate electrode of the first transfer transistor, a second conductive member electrically connected to the gate electrode of the second transfer transistor, and a control unit. The distance of closest proximity between the first conductive member and the floating diffusion portion is longer than the distance of closest proximity between the second conductive member and the floating diffusion portion. | 10-30-2014 |
20140361346 | SOLID-STATE IMAGE PICKUP DEVICE - A photoelectric conversion portion, a charge holding portion, a transfer portion, and a sense node are formed in a P-type well. The charge holding portion is configured to include an N-type semiconductor region, which is a first semiconductor region holding charges in a portion different from the photoelectric conversion portion. A P-type semiconductor region having a higher concentration than the P-type well is disposed under the N-type semiconductor region. | 12-11-2014 |
20140367747 | PHOTOELECTRIC CONVERSION DEVICE AND METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - An exemplary embodiment is a photoelectric conversion device having a photoelectric conversion portion, and a transfer portion. The transfer portion transfers charges of the photoelectric conversion portion. The photoelectric conversion portion includes first and second semiconductor regions of a first conductivity type. Charges generated by photoelectric conversion are accumulated in the first and second semiconductor regions. According to the structure of the first and second semiconductor regions of the exemplary embodiment or the method for manufacturing them, the transfer efficiency of charges can be improved while improving the sensitivity of the photoelectric conversion portion. | 12-18-2014 |