Patent application number | Description | Published |
20140162189 | SULFONIUM SALT, POLYMER, POLYMER MAKING METHOD, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonium salt having formula (1a) is provided wherein R | 06-12-2014 |
20140255843 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by coating a resist composition comprising (A) a polymer having an acid labile group, adapted to change its polarity under the action of acid, (B) a photoacid generator, and (C) an organic solvent onto a substrate, baking, exposing the resist film to high-energy radiation, PEB, and developing in an organic solvent-based developer to selectively dissolve the unexposed region of resist film. The photoacid generator has the formula: R | 09-11-2014 |
20140272707 | SULFONIUM SALT, POLYMER, RESIST COMPOSITION, AND PATTERNING PROCESS - A sulfonium salt having formula (1a) is provided wherein R | 09-18-2014 |
20140322650 | PATTERNING PROCESS AND RESIST COMPOSITION - A negative pattern is formed by coating a resist composition comprising a polymer comprising recurring units of formulae (1) and (2) and a photoacid generator of formula (3) onto a substrate, baking, exposure, PEB and developing in an organic solvent. In formulae (1) and (2), R | 10-30-2014 |
20150086926 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS - A carboxylic acid sulfonium salt having formula (1) is provided wherein R | 03-26-2015 |
20150301449 | PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS - An onium salt having an anion moiety of a specific bis-sulfonate structure is an effective photoacid generator. A resist composition comprising the PAG forms a pattern with a good balance of sensitivity and MEF, and minimal defects and offers a precise micropatterning resist material. | 10-22-2015 |
20150355544 | CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS - A resist composition is provided comprising (A) a carboxylic acid sulfonium salt whose anion moiety has a bulky structure of arenecarboxylate in which secondary or tertiary carbon atoms bond at both ortho-positions relative to the carbon atom in bond with carboxylate, as an acid diffusion regulator and (B) a polymer which is decomposed under the action of acid to increase its solubility in alkaline developer. When processed by EB or EUV lithography, the resist composition exhibits a very high resolution and forms a pattern with minimal LER. | 12-10-2015 |
20160048076 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS - A positive resist composition is provided comprising a polymer having an acid labile group and an acid generator bound to its backbone, in admixture with an onium salt having a specific cation structure capable of generating sulfonic acid having a molecular weight of at least 540. The composition is effective for suppressing acid diffusion, has high resolution, and forms a pattern of satisfactory profile and minimal edge roughness after exposure and development. | 02-18-2016 |
20160090355 | SULFONIUM SALT, RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS - A sulfonium salt of formula (0-1) is provided wherein W is alkylene or arylene, R | 03-31-2016 |