Patent application number | Description | Published |
20090236967 | LED LIGHT SOURCE AND METHOD FOR ADJUSTING CHROMATICITY OF LED LIGHT SOURCE - The present invention is directed to the provision of an LED light source that can easily adjust its chromaticity and a chromaticity adjustment method for such an LED light source. More specifically, the invention provides a chromaticity adjustment method for an LED light source having an LED device, a phosphor which absorbs a portion of light emitted from the LED device and emits light by wavelength conversion, and a resin material containing the phosphor and disposed so as to enclose the LED device, wherein an ink coating layer is disposed on a surface of the resin material in order to adjust chromaticity; the invention also provides an LED light source adjusted in such a manner. | 09-24-2009 |
20100245743 | LIQUID CRYSTAL FRESNEL LENS - The present invention is directed to the provision of a liquid crystal Fresnel lens that achieves high focusing performance. The liquid crystal Fresnel lens according to the present invention includes a concentrically segmented ring-shaped electrode group, a common electrode disposed opposite the ring-shaped electrode group, a liquid crystal layer provided between the ring-shaped electrode group and the common electrode, a first lens segment region which includes a first plurality of ring-shaped electrodes from the ring-shaped electrode group, and which forms a first retardation distribution by utilizing the first plurality of ring-shaped electrodes, and a second lens segment region which includes a second plurality of ring-shaped electrodes from the ring-shaped electrode group, the second plurality of ring-shaped electrodes being located outwardly of the first plurality of ring-shaped electrodes, and which forms a second retardation distribution by utilizing the second plurality of ring-shaped electrodes, wherein a Fresnel lens-like retardation distribution is formed across the first and second lens segment regions, and the number of the second plurality of ring-shaped electrodes is made smaller than the number of the first plurality of ring-shaped electrodes. | 09-30-2010 |
20120228673 | FIELD-EFFECT TRANSISTOR, SEMICONDUCTOR WAFER, METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR AND METHOD FOR PRODUCING SEMICONDUCTOR WAFER - Provided is a field-effect transistor including a gate insulating layer, a first semiconductor crystal layer in contact with the gate insulating layer, and a second semiconductor crystal layer lattice-matching or pseudo lattice-matching the first semiconductor crystal layer. Here, the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer are arranged in the order of the gate insulating layer, the first semiconductor crystal layer, and the second semiconductor crystal layer, the first semiconductor crystal layer is made of In | 09-13-2012 |
20120314180 | POLARIZATION CONVERSION ELEMENT - A polarization conversion element includes a phase reversal element and a polarization plane rotation element including a liquid crystal layer. The liquid crystal layer has a plurality of regions disposed along circumferential direction with the intersection point of the polarization lane rotation element and the optical axis as the center with alignment directions different from each other. When electric voltage in accordance with the wavelength of linear polarization incident on the polarization plane rotation element is applied, each region rotates the polarization plane of the polarization component transmitted by each region, and thereby converts linear polarization to radial polarization. The phase reversal element reverses, among the first and the second annular portions alternately disposed along the radial direction with the optical axis as the center, the phase of light incident on the first annular portion relative to the phase of light incident on the second annular portion. | 12-13-2012 |
20130341721 | SEMICONDUCTOR WAFER, FIELD-EFFECT TRANSISTOR, METHOD OF PRODUCING SEMICONDUCTOR WAFER, AND METHOD OF PRODUCING FIELD-EFFECT TRANSISTOR - Provided is a semiconductor wafer including a base wafer, a first insulating layer, and a semiconductor layer. Here, the base wafer, the first insulating layer and the semiconductor layer are arranged in an order of the base wafer, the first insulating layer and the semiconductor layer, the first insulating layer is made of an amorphous metal oxide or an amorphous metal nitride, the semiconductor layer includes a first crystal layer and a second crystal layer, the first crystal layer and the second crystal layer are arranged in an order of the first crystal layer and the second crystal layer in such a manner that the first crystal layer is positioned closer to the base wafer, and the electron affinity E | 12-26-2013 |
20130342768 | LIGHT MODULATOR ELEMENT AND MICROSCOPE APPARATUSA INCLUDING LIGHT MODULATION ELEMENT - A light modulator element includes a liquid crystal element which has a liquid crystal layer containing liquid crystal molecules aligned along a first direction, and two transparent electrodes disposed in opposition to each other with the liquid crystal layer sandwiched therebetween, and which controls the phase of linear polarization light and passing through said liquid crystal layer by applying an electric voltage between said two transparent electrodes; a polarizer plate which is disposed between a light source and said liquid crystal element and which has the transmission axis along the first direction or along a direction orthogonal to said first direction; and a rotation mechanism which supports the liquid crystal element and the polarizer plate and which rotates the liquid crystal element and the polarizer plate integrally in one unit with the optical axis of the liquid crystal element as the rotation axis. | 12-26-2013 |
20150116812 | ABERRATION CORRECTION DEVICE AND LASER MICROSCOPE - An aberration correction device ( | 04-30-2015 |
20150338631 | LIGHT MODULATING DEVICE - A light modulating device | 11-26-2015 |
20150338639 | PHASE MODULATION DEVICE AND LASER MICROSCOPE - A phase modulation device corrects wave front aberrations generated by an optical system including an objective lens disposed on an optical path of a light flux. The phase modulation device includes a phase modulation element which includes a plurality of electrodes, and modulates the phase of the light flux in accordance with a voltage applied to each electrode, and a control circuit which controls the voltage to be applied to each electrode. The control circuit controls the voltage to be applied to each electrode in such a manner that the light flux is imparted with a phase modulation amount in accordance with a phase modulation profile having a polarity opposite to the polarity of a phase distribution to be determined according to a relational equation representing a relationship between a numerical aperture of the objective lens and a ratio between third-order spherical aberration and fifth-order spherical aberration. | 11-26-2015 |