Patent application number | Description | Published |
20100078770 | Lock and Key Through-Via Method for Wafer Level 3 D Integration and Structures Produced - A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art. | 04-01-2010 |
20110111560 | Lock and Key Through-Via Method for Wafer Level 3D Integration and Structures Produced Thereby - A three dimensional device stack structure comprises two or more active device and interconnect layers further connected together using through substrate vias. Methods of forming the three dimensional device stack structure comprise alignment, bonding by lamination, thinning and post thinning processing. The via features enable the retention of alignment through the lamination process and any subsequent process steps thus achieving a mechanically more robust stack structure compared to the prior art. | 05-12-2011 |
20130029848 | LOW-LOSS SUPERCONDUCTING DEVICES - Low-loss superconducting devices and methods for fabricating low loss superconducting devices. For example, superconducting devices, such as superconducting resonator devices, are formed with a (200)-oriented texture titanium nitride (TiN) layer to provide high Q, low loss resonator structures particularly suitable for application to radio-frequency (RF) and/or microwave superconducting resonators, such as coplanar waveguide superconducting resonators. In one aspect, a method of forming a superconducting device includes foaming a silicon nitride (SiN) seed layer on a substrate, and forming a (200)-oriented texture titanium nitride (TiN) layer on the SiN seed layer. | 01-31-2013 |
20140264286 | SUSPENDED SUPERCONDUCTING QUBITS - A qubit system includes a substrate layer, a qubit circuit suspended above the substrate layer and fine structure disposed between the qubit circuit and the substrate layer. | 09-18-2014 |
20140264287 | REMOVAL OF SPURIOUS MICROWAVE MODES VIA FLIP-CHIP CROSSOVER - A coplanar waveguide device includes a coplanar waveguide structure disposed on a substrate, at least one qubit coupled to the coplanar waveguide structure and an add-on chip having a metallized trench, and disposed over the substrate. | 09-18-2014 |
20140274725 | CHIP MODE ISOLATION AND CROSS-TALK REDUCTION THROUGH BURIED METAL LAYERS AND THROUGH-VIAS - A method for fabricating a chip surface base includes preparing a first substrate, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias, preparing a second substrate, bonding the first and second substrates and exposing the metal fillings. A method for fabricating a chip surface base includes preparing a first and second substrate, depositing a metal on at least one of the first and second substrates, bonding the first and second substrates, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias and exposing the metal fillings. A chip surface base device includes a first substrate, a second substrate, a metal layer disposed between the first and second substrates and a plurality vias disposed on the first substrate. | 09-18-2014 |
20150155468 | CHIP MODE ISOLATION AND CROSS-TALK REDUCTION THROUGH BURIED METAL LAYERS AND THROUGH-VIAS - A method for fabricating a chip surface base includes preparing a first substrate, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias, preparing a second substrate, bonding the first and second substrates and exposing the metal fillings. A method for fabricating a chip surface base includes preparing a first and second substrate, depositing a metal on at least one of the first and second substrates, bonding the first and second substrates, preparing a plurality of vias in the first substrate, depositing metal fillings into the plurality of vias and exposing the metal fillings. A chip surface base device includes a first substrate, a second substrate, a metal layer disposed between the first and second substrates and a plurality of vias disposed on the first substrate. | 06-04-2015 |
20150311422 | SUSPENDED SUPERCONDUCTING QUBITS - A qubit system includes a substrate layer, a qubit circuit suspended above the substrate layer and fine structure disposed between the qubit circuit and the substrate layer. | 10-29-2015 |