Patent application number | Description | Published |
20090184788 | ENCAPSULATED SWITCHES EMPLOYING MERCURY SUBSTITUTE AND METHODS OF MANUFACTURE THEREOF - Encapsulated switches are disclosed which substitute non-toxic gallium alloy for mercury. In one embodiment, wetting of the interior surfaces of the housing is prevented by coating the surfaces with an electrically insulative inorganic non-metallic material, such as alumina or boron nitrate. According to another embodiment, a perfluorocarbon liquid is employed as the anti-wetting agent. | 07-23-2009 |
20090289636 | ELECTRICAL OVERSTRESS AND TRANSIENT LATCH-UP PULSE GENERATION SYSTEM, CIRCUIT, AND METHOD - A circuit arrangement, system, and method to test a device with a plurality of pins for electric overstress and transient induced latch-up characteristics. The circuit arrangement includes an inverting operational amplifier with a unity gain to receive a triggering signal and supply an inverted signal to a power amplifier. The power amplifier transforms the inverted signal into a test signal, which is received by a ratio circuit. The test signal is further operable to test the electric overstress and transient induced latch-up characteristics of the device. The ratio circuit transforms the test signal into a ratio signal. The ratio signal has a voltage magnitude that corresponds to the current magnitude of the test signal. The test signal and ratio signal are measured to determine if, during testing, the device or a component of the device has failed. | 11-26-2009 |
20100079160 | Probe Interface for electrostatic discharge testing of an integrated circuit - A system, probe interface, and method to test an integrated circuit with an electrostatic discharge signal. The probe interface includes a pulse generation circuit, ground plane, and a relay matrix, while the integrated circuit includes a plurality of contact points. The probe interface is configured proximate to the integrated circuit and the relay matrix is configured to electrically connect at least one of an operative signal, the pulse generation circuit, or the ground plane to a contact point of the integrated circuit. The probe interface is thus configured to provide a shortened path for at least one of the electrostatic discharge signal from the probe interface to the integrated circuit, or to the ground plane from the integrated circuit. The probe interface may selectively electrically connect to up to about thirty-two contact points of the integrated circuit, while the system may include up to about four probe interfaces. | 04-01-2010 |
20100117674 | SYSTEMS AND METHODS FOR CHARGED DEVICE MODEL ELECTROSTATIC DISCHARGE TESTING - Systems and methods for testing an integrated circuit device using transmission path and charged device model electrostatic discharge testing. The method includes measuring a electrostatic discharge signal from a charged transmission path of the system, measuring a electrostatic discharge signal from the charged transmission path of the system and a charged integrated circuit device coupled with the charged transmission path, and determining a charged device model waveform based upon distinctions between these electrostatic discharge signals. | 05-13-2010 |
20110265938 | Encapsulated Switches Employing Mercury Substitute and Methods of Manufacture Thereof - Encapsulated switches are disclosed which substitute non-toxic gallium alloy for mercury. In one embodiment, wetting of the interior surfaces of the housing is prevented by coating the surfaces with an electrically insulative inorganic non-metallic material, such as alumina or boron nitrate. According to another embodiment, a perfluorocarbon liquid is employed as the anti-wetting agent. | 11-03-2011 |
20130257453 | RF ESD Device Level Differential Voltage Measurement - A method of measuring, recording, and calculating high speed differential voltage measurements across a device-under-test during electrostatic discharge testing of for discrete devices and silicon wafer probing uses high frequency components and a combination of high impedance resistors and attenuators to allow differential voltage measurements of stress signals including IED 61000-4-2, HMM, HBM, and MM with voltages in excess of +/−12000V. | 10-03-2013 |
20130325390 | RF ESD DEVICE LEVEL DIFFERENTIAL VOLTAGE MEASUREMENT - A testing assembly for measuring voltage across a circuit during an electrostatic discharge event is provided. The assembly includes a high-frequency read-out device configured for coupling with an input of the circuit and coupling with an output of the circuit, each of the couplings including components configured for substantially blocking high-frequency electric signals while passing low frequency electric signals. A method of operation and a computer program product are also disclosed. | 12-05-2013 |
20150109005 | Low-Side Coaxial Current Probe - A method and apparatus for non-intrusively measuring flowing currents and/or voltage on the inner conductor of a coaxial cable is introduced herein. In particular, a resultant low-impedance element is coupled concentrically to the shield at a desired insertion point of the coaxial cable. A pair of conductive leads provided by the resultant low-impedance element is thereafter monitored for derived flowing currents that are in direct proportion to but of opposite polarity to the current within the inner conductor of the coaxial cable. | 04-23-2015 |